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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SKI06073 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski06073-datasheets-0743.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 78A | 60V | 116W Tc | N-Channel | 3810pF @ 25V | 6.3m Ω @ 39A, 10V | 2.5V @ 1mA | 78A Tc | 53.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P08-28-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0828ge3-datasheets-4795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 80V | 136W Tc | P-Channel | 6035pF @ 25V | 28mOhm @ 12.5A, 10V | 3.5V @ 250μA | 48A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6H836NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h836nt1g-datasheets-0853.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.7W Ta 89W Tc | N-Channel | 1640pF @ 40V | 6.7m Ω @ 15A, 10V | 4V @ 95μA | 15A Ta 74A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7P50D(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | 100W | 1 | D-Pak | 600pF | 18ns | 8 ns | 7A | 30V | 500V | 100W Tc | N-Channel | 600pF @ 25V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 7A Ta | 12nC @ 10V | 1.22 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4666DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4666dyt1ge3-datasheets-0673.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | 13 ns | 12ns | 10 ns | 27 ns | 16.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 5W Tc | 25V | N-Channel | 1145pF @ 10V | 600 mV | 10m Ω @ 10A, 10V | 1.5V @ 250μA | 16.5A Tc | 34nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| RCD100N20TL | ROHM Semiconductor | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3 | EAR99 | No | SINGLE | GULL WING | 3 | 1 | 1 | R-PSSO-G2 | 25 ns | 35ns | 15 ns | 40 ns | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 850mW Ta 20W Tc | 40A | N-Channel | 1400pF @ 25V | 182m Ω @ 5A, 10V | 5.25V @ 1mA | 10A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7703EDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7703ednt1e3-datasheets-0864.pdf | PowerPAK® 1212-8 | 6 | 49 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 40 | 1.3W | 1 | Other Transistors | S-XDSO-C6 | 4 ns | 6ns | 6 ns | 23 ns | -6.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 1.3W Ta | 4.3A | 20A | 20V | P-Channel | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 4.3A Ta | 18nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| TK5A65W,S5X | Toshiba Semiconductor and Storage | $4.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | 5.2A | 650V | 30W Tc | N-Channel | 380pF @ 300V | 1.2 Ω @ 2.6A, 10V | 3.5V @ 170μA | 5.2A Ta | 10.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7230DN-T1-GE3 | Vishay Siliconix | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7230dnt1e3-datasheets-3689.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 13 ns | 10ns | 10 ns | 33 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3V | 1.5W Ta | 9A | 40A | N-Channel | 12m Ω @ 14A, 10V | 3V @ 250μA | 9A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTD5C688NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-ntd5c688nlt4g-datasheets-0824.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | N-Channel | 27.4m Ω @ 10A, 10V | 2.1V @ 250μA | 7.5A Ta 17A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHT4NQ10T,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-pht4nq10t135-datasheets-0738.pdf | TO-261-4, TO-261AA | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 6 Weeks | 4.535924g | No SVHC | 250MOhm | 4 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | 30 | 6.9W | 1 | 8 ns | 13ns | 11 ns | 20 ns | 3.5A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 6.9W Tc | 100V | N-Channel | 300pF @ 25V | 250m Ω @ 1.75A, 10V | 4V @ 1mA | 3.5A Tc | 7.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFR010TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfr010pbf-datasheets-4965.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 11 Weeks | 1.437803g | 3 | yes | EAR99 | No | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 10 ns | 50ns | 19 ns | 13 ns | 8.2A | 20V | SILICON | 50V | 25W Tc | TO-252AA | 0.2Ohm | 60V | N-Channel | 250pF @ 25V | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 8.2A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7806ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7806adnt1e3-datasheets-6105.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 13 ns | 10ns | 10 ns | 33 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 9A | 40A | 30V | N-Channel | 11m Ω @ 14A, 10V | 3V @ 250μA | 9A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDPF8N50NZF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdpf8n50nzf-datasheets-0753.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 40W | 1 | FET General Purpose Power | 17 ns | 34ns | 27 ns | 43 ns | 7A | 25V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 7A | 28A | 1Ohm | 500V | N-Channel | 735pF @ 25V | 1 Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 18nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| IRFR214PBF | Vishay Siliconix | $0.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | 250V | 2.2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | 250V | 4V | 2.5W Ta 25W Tc | 390 ns | 2Ohm | 250V | N-Channel | 140pF @ 25V | 2Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDMS2D4N03S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms2d4n03s-datasheets-0764.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 68.1mg | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | NOT SPECIFIED | Single | NOT SPECIFIED | 30V | 75W Tc | N-Channel | 6540pF @ 15V | 1.8m Ω @ 28A, 10V | 3V @ 1mA | 163A Tc | 88nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAW60R600P7SE8228XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 600V | 21W Tc | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4004LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth4004lpsq13-datasheets-0775.pdf | 8-PowerTDFN | 22 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.83W Ta 125W Tc | N-Channel | 5220pF @ 20V | 2.5m Ω @ 50A, 10V | 3V @ 250μA | 100A Tc | 69.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR010TRPBF | Vishay Siliconix | $1.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr010pbf-datasheets-4965.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | 1.437803g | 3 | No | 1 | Single | D-Pak | 250pF | 10 ns | 50ns | 19 ns | 13 ns | 8.2A | 20V | 50V | 25W Tc | 200mOhm | 60V | N-Channel | 250pF @ 25V | 200mOhm @ 4.6A, 10V | 4V @ 250μA | 8.2A Tc | 10nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4638DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4638dyt1e3-datasheets-0786.pdf | 8-SOIC (0.154, 3.90mm Width) | 13 Weeks | 8-SO | 4.19nF | 19ns | 18 ns | 44 ns | 22.4A | 20V | 30V | 3W Ta 5.9W Tc | 6.5mOhm | 30V | N-Channel | 4190pF @ 15V | 6.5mOhm @ 15A, 10V | 2.7V @ 1mA | 22.4A Tc | 100nC @ 10V | 6.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6P53D(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | D-Pak | 600pF | 18ns | 8 ns | 6A | 30V | 525V | 100W Tc | N-Channel | 600pF @ 25V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 6A Ta | 12nC @ 10V | 1.3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI45N06S4L08AKSA3 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipi45n06s4l08aksa1-datasheets-0259.pdf | TO-262-3 | Contains Lead | 3 | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | 71W | SINGLE | 1 | 4.78nF | 9 ns | 2ns | 8 ns | 45 ns | 45A | 16V | 60V | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 180A | 0.0082Ohm | 97 mJ | 8.2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C442NLTT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c442nltt3g-datasheets-0719.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 25V | 2.5m Ω @ 50A, 10V | 2V @ 250μA | 28A Ta 130A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C645NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c645nlaft3g-datasheets-1920.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 79W Tc | N-Channel | 2200pF @ 50V | 4m Ω @ 50A, 10V | 2V @ 250μA | 22A Ta | 34nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R360P7SE8228XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 600V | 22W Tc | N-Channel | 555pF @ 400V | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70P04P4L08ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd70p04p4l08atma1-datasheets-0797.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.41mm | 6.22mm | Contains Lead | 2 | 26 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 12 ns | 10ns | 41 ns | 50 ns | 70A | 16V | -40V | SILICON | DRAIN | 40V | 75W Tc | 280A | 0.0078Ohm | 24 mJ | P-Channel | 5430pF @ 25V | 7.8m Ω @ 70A, 10V | 2.2V @ 120μA | 70A Tc | 92nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IPAN60R360P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipan60r360p7sxksa1-datasheets-0726.pdf | TO-220-3 Full Pack | 18 Weeks | 650V | 22W Tc | N-Channel | 555pF @ 400V | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6220 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/alphaomegasemiconductorinc-aon6220-datasheets-0728.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 100V | 113.5W Tc | N-Channel | 4525pF @ 50V | 6.2m Ω @ 20A, 10V | 2.3V @ 250μA | 48A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C430NLAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c430nlaft1g-datasheets-0686.pdf | 8-PowerTDFN, 5 Leads | 40V | 3.8W Ta 110W Tc | N-Channel | 4300pF @ 20V | 1.4m Ω @ 50A, 10V | 2V @ 250μA | 38A Ta 200A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ040N06LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz040n06ls5atma1-datasheets-0744.pdf | 8-PowerTDFN | 1.1mm | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.1W | 1 | 150°C | S-PDSO-N3 | 8.5 ns | 25.6 ns | 17A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 3.3mOhm | 60V |
