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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMP3004SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 24 Weeks | e3 | Matte Tin (Sn) | 260 | 30 | 30V | 1.2W Ta | P-Channel | 7693pF @ 15V | 4m Ω @ 20A, 10V | 2.5V @ 250μA | 16.2A Ta | 156nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp5n50dge3-datasheets-1990.pdf | TO-220-3 | 3 | 13 Weeks | 6.000006g | 3 | No | 1 | Single | 104W | 1 | FET General Purpose Powers | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | SWITCHING | 500V | 500V | 104W Tc | TO-220AB | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N25CT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf9n25ct-datasheets-0437.pdf | 250V | 8.8A | TO-220-3 Full Pack | Lead Free | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 15 ns | 85ns | 65 ns | 90 ns | 8.8A | 30V | 38W Tc | 250V | N-Channel | 710pF @ 25V | 430m Ω @ 4.4A, 10V | 4V @ 250μA | 8.8A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| DMP3007SCGQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3007scgq7-datasheets-0443.pdf | 8-PowerVDFN | 17 Weeks | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 260 | 30 | 30V | 1W Ta | P-Channel | 2826pF @ 15V | 6.8m Ω @ 11.5A, 10V | 3V @ 250μA | 50A Tc | 64.2nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT10N60L | Alpha & Omega Semiconductor Inc. | $6.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 18 Weeks | NO | FET General Purpose Power | Single | 600V | 250W Tc | 10A | N-Channel | 1600pF @ 25V | 750m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7495TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7495trpbf-datasheets-0194.pdf | 100V | 7.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 22MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 8.7 ns | 13ns | 36 ns | 10 ns | 7.3A | 20V | 100V | SILICON | SWITCHING | 4V | 2.5W Ta | 100V | N-Channel | 1530pF @ 25V | 4 V | 22m Ω @ 4.4A, 10V | 4V @ 250μA | 7.3A Ta | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| NVATS5A107PLZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvats5a107plzt4g-datasheets-0453.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | NOT SPECIFIED | NOT SPECIFIED | 40V | 60W Tc | P-Channel | 2400pF @ 20V | 17m Ω @ 25A, 10V | 2.6V @ 1mA | 55A Ta | 47nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPLK80R750P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | MOSFET (Metal Oxide) | 8-PowerTDFN | 18 Weeks | 800V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C450NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c450nlt3g-datasheets-2161.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 68W Tc | N-Channel | 2100pF @ 20V | 2.8m Ω @ 40A, 10V | 2V @ 250μA | 27A Ta 110A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ024N04LS6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 6 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz024n04ls6atma1-datasheets-0463.pdf | 8-PowerTDFN | 18 Weeks | 40V | 2.5W Ta 75W Tc | N-Channel | 1800pF @ 20V | 2.4m Ω @ 20A, 10V | 2.3V @ 250μA | 24A Ta 40A Tc | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT4S60L | Alpha & Omega Semiconductor Inc. | $3.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 3 | 18 Weeks | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 83W | 1 | R-PSFM-T3 | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 83W Tc | TO-220AB | 4A | 0.9Ohm | 77 mJ | N-Channel | 263pF @ 100V | 900m Ω @ 2A, 10V | 4.1V @ 250μA | 4A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| DMPH4015SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph4015spsq13-datasheets-0330.pdf | 8-PowerTDFN | 14 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.6W Ta | P-Channel | 4234pF @ 20V | 10m Ω @ 9.8A, 10V | 2.5V @ 250μA | 50A Tc | 91nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF4S60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 16 Weeks | 3 | No | 25W | 1 | FET General Purpose Power | 4A | Single | 600V | 25W Tc | 4A | N-Channel | 263pF @ 100V | 900m Ω @ 2A, 10V | 4.1V @ 250μA | 4A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS80R900P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips80r900p7akma1-datasheets-0337.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 45W Tc | 14A | 0.9Ohm | 13 mJ | N-Channel | 350pF @ 500V | 900m Ω @ 2.2A, 10V | 3.5V @ 110μA | 6A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4H05NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-nttfs4h05ntwg-datasheets-0341.pdf | 8-PowerWDFN | Lead Free | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | S-PDSO-F5 | 94A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.66W Ta 46.3W Tc | 22.4A | 304A | N-Channel | 1205pF @ 12V | 3.3m Ω @ 30A, 10V | 2.1V @ 250μA | 22.4A Ta 94A Tc | 18.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AOD294A | Alpha & Omega Semiconductor Inc. | $11.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 28 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK03M5DPA-00#J5A | Renesas Electronics America | $0.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk03m5dpa00j5a-datasheets-0346.pdf | 8-WFDFN Exposed Pad | Lead Free | 5 | 16 Weeks | 8 | yes | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-N5 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 30W Tc | 120A | 11 mJ | N-Channel | 1890pF @ 10V | 6.5m Ω @ 15A, 10V | 30A Ta | 10.4nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR1010ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfr1010ztrlpbf-datasheets-9929.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 76ns | 48 ns | 42 ns | 91A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 140W Tc | TO-252AA | 42A | 0.0075Ohm | 220 mJ | 55V | N-Channel | 2840pF @ 25V | 7.5m Ω @ 42A, 10V | 4V @ 100μA | 42A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| FDPF680N10T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf680n10t-datasheets-0362.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 13 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 24W | 1 | FET General Purpose Power | 13 ns | 19ns | 6 ns | 18 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 24W Tc | TO-220AB | 48A | 0.068Ohm | 50.4 mJ | 100V | N-Channel | 1000pF @ 50V | 68m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STMFS5C628NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C628NLWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c628nlwfaft3g-datasheets-0372.pdf | 8-PowerTDFN, 5 Leads | 6 Weeks | 60V | 3.7W Ta 110W Tc | N-Channel | 3600pF @ 25V | 2.4m Ω @ 50A, 10V | 2V @ 135μA | 28A Ta 150A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1069X-T1-GE3 | Vishay Siliconix | $5.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1069xt1ge3-datasheets-0322.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 6 | 32.006612mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 30 | 1 | Other Transistors | 19 ns | 31ns | 31 ns | 23 ns | 940mA | 12V | SILICON | SWITCHING | 20V | 236mW Ta | 0.94A | -20V | P-Channel | 308pF @ 10V | 184m Ω @ 940mA, 4.5V | 1.5V @ 250μA | 6.86nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| AOT470 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | TO-220 | 5.64nF | 100A | 75V | 2.1W Ta 268W Tc | N-Channel | 5640pF @ 30V | 10.5mOhm @ 30A, 10V | 4V @ 250μA | 10A Ta 100A Tc | 136nC @ 10V | 10.5 mΩ | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMYS2D1N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys2d1n04cltwg-datasheets-0299.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 83W Tc | N-Channel | 3100pF @ 25V | 2.5m Ω @ 50A, 10V | 2V @ 90μA | 29A Ta 132A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVATS4A103PZT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvats4a103pzt4g-datasheets-0385.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 5 Weeks | ACTIVE (Last Updated: 5 days ago) | yes | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | NOT SPECIFIED | NOT SPECIFIED | 30V | 60W Tc | P-Channel | 2430pF @ 10V | 13m Ω @ 28A, 10V | 2.6V @ 1mA | 60A Ta | 47nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP4011SK3Q-13 | Diodes Incorporated | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp4011sk3q13-datasheets-0301.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 1.8W Ta 5W Tc | P-Channel | 2747pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 14A Ta 74A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD214PBF | Vishay Siliconix | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd214pbf-datasheets-0387.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4 | No | Single | 1W | 4-DIP, Hexdip, HVMDIP | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 450mA | 20V | 250V | 1W Ta | 2Ohm | 250V | N-Channel | 140pF @ 25V | 2Ohm @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DN2535N3-G-P013 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-dn2535n5g-datasheets-1204.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 5 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | 1 | O-PBCY-T3 | 120mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Tc | 5 pF | 350V | N-Channel | 300pF @ 25V | 25 Ω @ 120mA, 0V | 120mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60N900CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n900chc5g-datasheets-0232.pdf | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 600V | 50W Tc | N-Channel | 480pF @ 100V | 900mOhm @ 2.3A, 10V | 4V @ 250μA | 4.5A Tc | 9.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD2210 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aod2210-datasheets-6049.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 18A | 200V | 2.5W Ta 100W Tc | N-Channel | 2065pF @ 100V | 105m Ω @ 18A, 10V | 2.5V @ 250μA | 3A Ta 18A Tc | 40nC @ 10V | 5V 10V | ±20V |
