Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFR5410TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfu5410pbf-datasheets-2314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | TO-252AA | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTMFS5C646NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs5c646nlt1g-datasheets-0201.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 93A | 60V | 3.7W Ta 79W Tc | N-Channel | 2164pF @ 25V | 4.7m Ω @ 50A, 10V | 2V @ 250μA | 20A Ta 93A Tc | 33.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS5116PLWFTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvtfs5116pltwg-datasheets-7955.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | 8 | 1 | Single | Other Transistors | 14 ns | 68ns | 36 ns | 24 ns | 6A | 20V | 60V | 3.2W Ta 21W Tc | -60V | P-Channel | 1258pF @ 25V | 52m Ω @ 7A, 10V | 3V @ 250μA | 6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMNH6011LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | 55V | 1.6W Ta | N-Channel | 3077pF @ 30V | 12m Ω @ 25A, 10V | 2V @ 250μA | 80A Tc | 49.1nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI468 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -50°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-251-3 Stub Leads, IPak | 18 Weeks | 11.5A | 300V | 150W Tc | N-Channel | 790pF @ 25V | 420m Ω @ 6A, 10V | 4.5V @ 250μA | 11.5A Tc | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C423NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c423nlt1g-datasheets-6127.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 20V | 2m Ω @ 50A, 10V | 2V @ 250μA | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP24N08 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqp24n08-datasheets-0224.pdf | 80V | 24A | TO-220-3 | Lead Free | 3 | 5 Weeks | 1.8g | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 75W | 1 | FET General Purpose Power | R-PSFM-T3 | 10 ns | 105ns | 35 ns | 30 ns | 24A | 25V | SILICON | SWITCHING | 75W Tc | TO-220AB | 96A | 0.06Ohm | 230 mJ | 80V | N-Channel | 750pF @ 25V | 60m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| TSM60N900CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n900chc5g-datasheets-0232.pdf | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 600V | 50W Tc | N-Channel | 480pF @ 100V | 900mOhm @ 2.3A, 10V | 4V @ 250μA | 4.5A Tc | 9.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD2210 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aod2210-datasheets-6049.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 18A | 200V | 2.5W Ta 100W Tc | N-Channel | 2065pF @ 100V | 105m Ω @ 18A, 10V | 2.5V @ 250μA | 3A Ta 18A Tc | 40nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF5N50FD | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aotf5n50fd-datasheets-6050.pdf | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 5A | Single | 500V | 35W Tc | 5A | N-Channel | 530pF @ 25V | 1.8 Ω @ 2.5A, 10V | 4.2V @ 250μA | 5A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR5410TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfu5410pbf-datasheets-2314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | TO-252AA | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FKI10198 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-fki10198-datasheets-0254.pdf | TO-220-3 Full Pack | Lead Free | 12 Weeks | unknown | NOT SPECIFIED | NOT SPECIFIED | 31A | 100V | 40W Tc | N-Channel | 3990pF @ 25V | 17.8m Ω @ 23.4A, 10V | 2.5V @ 1mA | 31A Tc | 55.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB600CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb600chc5g-datasheets-0255.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 36 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 63W Tc | 7A | 21A | 0.6Ohm | 36 mJ | N-Channel | 516pF @ 100V | 600m Ω @ 2.1A, 10V | 4V @ 250μA | 7A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPI45N06S4L08AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s4l08aksa1-datasheets-0259.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 39 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 71W Tc | 45A | 180A | 0.0079Ohm | 97 mJ | N-Channel | 4780pF @ 25V | 8.2m Ω @ 45A, 10V | 2.2V @ 35μA | 45A Tc | 64nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S405ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd90n06s405atma2-datasheets-0263.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | 3.949996g | 3 | yes | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | 1 | 1 | R-PSSO-G2 | 20 ns | 5ns | 8 ns | 35 ns | 90A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 107W Tc | N-Channel | 6500pF @ 25V | 5.1m Ω @ 90A, 10V | 4V @ 60μA | 90A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQD40N06-14L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n0614lge3-datasheets-8291.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 60V | 75W Tc | N-Channel | 2105pF @ 25V | 14mOhm @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH10H028SPS-13 | Diodes Incorporated | $1.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh10h028sps13-datasheets-0172.pdf | 8-PowerTDFN | 17 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40A | 100V | 1.6W Ta | N-Channel | 2245pF @ 50V | 28m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK2Q60D(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-251-3 Stub Leads, IPak | 6.5mm | 5.5mm | 2.3mm | Lead Free | 18 Weeks | 3 | No | Single | 60W | 1 | 15ns | 7 ns | 2A | 30V | 600V | 60W Tc | N-Channel | 280pF @ 25V | 4.3 Ω @ 1A, 10V | 4.4V @ 1mA | 2A Ta | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPD03N50C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd03n50c3atma1-datasheets-0187.pdf | 560V | 3.2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | 3 | 38W | 1 | PG-TO252-3-1 | 350pF | 10 ns | 5ns | 15 ns | 70 ns | 3.2A | 20V | 500V | 500V | 38W Tc | 1.25Ohm | N-Channel | 350pF @ 25V | 1.4Ohm @ 2A, 10V | 3.9V @ 135μA | 3.2A Tc | 15nC @ 10V | 1.4 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIRA60DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira60dpt1ge3-datasheets-7211.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 57W Tc | N-Channel | 7650pF @ 15V | 0.94mOhm @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 125nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5443DC-T1-E3 | Vishay Siliconix | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5443dct1e3-datasheets-0192.pdf | 8-SMD, Flat Lead | 8 | 21 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | Not Qualified | 30ns | 30 ns | 50 ns | 3.6A | 12V | SILICON | 1.3W Ta | 0.065Ohm | 20V | P-Channel | 65m Ω @ 3.6A, 4.5V | 600mV @ 250μA (Min) | 3.6A Ta | 14nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| BSF450NE7NH3XUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsf450ne7nh3xuma1-datasheets-0119.pdf | 3-WDSON | Lead Free | 26 Weeks | 3 | EAR99 | Nickel | e4 | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 11.3ns | 15A | 20V | 75V | 2.2W Ta 18W Tc | 75V | N-Channel | 390pF @ 37.5V | 45m Ω @ 8A, 10V | 3.5V @ 8μA | 5A Ta 15A Tc | 6nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP15P12 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqpf15p12-datasheets-1032.pdf | -120V | -15A | TO-220-3 | Lead Free | 3 | 5 Weeks | 1.8g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 100W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 15 ns | 100ns | 80 ns | 80 ns | 15A | 30V | SILICON | SWITCHING | 120V | 100W Tc | TO-220AB | 60A | 0.2Ohm | -120V | P-Channel | 1100pF @ 25V | 200m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FCU5N60TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcd5n60tmws-datasheets-3372.pdf | 600V | 4.6A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 36 Weeks | 343.08mg | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 54W | 1 | 12 ns | 40ns | 22 ns | 47 ns | 4.6A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 54W Tc | 0.95Ohm | 600V | N-Channel | 600pF @ 25V | 950m Ω @ 2.3A, 10V | 5V @ 250μA | 4.6A Tc | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TSM3N100CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm3n100cprog-datasheets-0139.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 19 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 99W Tc | 2.5A | 10A | 6Ohm | 20 mJ | N-Channel | 664pF @ 25V | 6 Ω @ 1.25A, 10V | 5.5V @ 250μA | 2.5A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7746PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7746pbf-datasheets-0143.pdf | TO-220-3 | Lead Free | 12 Weeks | 6.000006g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 9.9 ns | 36ns | 30 ns | 33 ns | 59A | 20V | 75V | 99W Tc | N-Channel | 3049pF @ 25V | 10.6m Ω @ 35A, 10V | 3.7V @ 100μA | 59A Tc | 83nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6H848NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h848nt1g-datasheets-0152.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.7W Ta 73W Tc | N-Channel | 1180pF @ 40V | 9.4m Ω @ 10A, 10V | 4V @ 70μA | 13A Ta 57A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R280P7SE8228AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 600V | 53W Tc | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N10CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n10cprog-datasheets-0157.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 100V | 120W Tc | 70A | N-Channel | 4300pF @ 30V | 13m Ω @ 30A, 10V | 4V @ 250μA | 70A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y2R8-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 12 Weeks |
