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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB65R190C7ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r190c7atma2-datasheets-5928.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 72W Tc | 13A | 49A | 0.19Ohm | 57 mJ | N-Channel | 1150pF @ 400V | 190m Ω @ 5.7A, 10V | 4V @ 290μA | 13A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB47N10S33ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb47n10s33atma1-datasheets-5708.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 175W Tc | 47A | 188A | 0.033Ohm | 400 mJ | N-Channel | 2500pF @ 25V | 33m Ω @ 33A, 10V | 4V @ 2mA | 47A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6216TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf6216trpbf-datasheets-4195.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 14 Weeks | No SVHC | 240mOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.5W | 1 | 150°C | 18 ns | 15ns | 26 ns | 33 ns | -2.2A | 20V | 150V | SILICON | SWITCHING | -5V | 2.5W Ta | 120 ns | -150V | P-Channel | 1280pF @ 25V | 5 V | 240m Ω @ 1.3A, 10V | 5V @ 250μA | 2.2A Ta | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFS3307TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs3307trlpbf-datasheets-6111.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 2 | 15 Weeks | 6.3MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 26 ns | 120ns | 63 ns | 51 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 75A | 270 mJ | 75V | N-Channel | 5150pF @ 50V | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB60R180C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r180c7atma1-datasheets-5881.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 68W Tc | TO-263AB | 13A | 45A | 0.18Ohm | 53 mJ | N-Channel | 1080pF @ 400V | 130m Ω @ 5.3A, 10V | 4V @ 260μA | 13A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7537TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7537trlpbf-datasheets-5735.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3.949996g | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 105ns | 84 ns | 82 ns | 173A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 230W Tc | 700A | 554 mJ | N-Channel | 7020pF @ 25V | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 173A Tc | 210nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB042N10N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb042n10n3gatma1-datasheets-5922.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 1 | 214W | 1 | 175°C | R-PSSO-G2 | 27 ns | 59ns | 14 ns | 48 ns | 137A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 214W Tc | 400A | 0.0042Ohm | 100V | N-Channel | 8410pF @ 50V | 4.2m Ω @ 50A, 10V | 3.5V @ 150μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB320N20N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp320n20n3gxksa1-datasheets-4150.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | no | EAR99 | No | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | 136W | 1 | R-PSSO-G2 | 11 ns | 9ns | 4 ns | 21 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 136W Tc | N-Channel | 2350pF @ 100V | 32m Ω @ 34A, 10V | 4V @ 90μA | 34A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDI025N06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdmc8676-datasheets-6694.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 395W Tc | 120A | 1060A | 0.0025Ohm | 2531 mJ | N-Channel | 14.885pF @ 25V | 2.5m Ω @ 75A, 10V | 4.5V @ 250μA | 265A Tc | 226nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6726MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf6726mtrpbf-datasheets-5568.pdf | DirectFET™ Isometric MT | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | No SVHC | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 30 | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 20 ns | 30ns | 17 ns | 25 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 32A | 0.0017Ohm | 260 mJ | 30V | N-Channel | 6140pF @ 15V | 1.7 V | 1.7m Ω @ 32A, 10V | 2.35V @ 150μA | 32A Ta 180A Tc | 77nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB026N06NATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb026n06natma1-datasheets-5580.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 136W | 1 | R-PSSO-G2 | 17 ns | 15ns | 8 ns | 30 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3W Ta 136W Tc | 25A | 400A | 0.0026Ohm | 60V | N-Channel | 4100pF @ 30V | 2.6m Ω @ 100A, 10V | 2.8V @ 75μA | 25A Ta 100A Tc | 56nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPB07N60C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb07n60c3atma1-datasheets-5621.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 600V | 83W Tc | 7.3A | 21.9A | 0.6Ohm | 230 mJ | N-Channel | 790pF @ 25V | 600m Ω @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD025N06NATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd025n06natma1-datasheets-5639.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.5mm | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 3 | 1 | NOT SPECIFIED | 3W | 1 | 175°C | R-PSSO-G2 | 16 ns | 20ns | 12 ns | 34 ns | 90A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3W Ta 167W Tc | TO-252AA | 26A | 0.0025Ohm | 60V | N-Channel | 5200pF @ 30V | 2.5m Ω @ 90A, 10V | 2.8V @ 95μA | 90A Tc | 71nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFS31N20DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfb31n20dpbf-datasheets-2062.pdf | 200V | 31A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | No SVHC | 82mOhm | 3 | EAR99 | No | GULL WING | Single | 200W | 1 | R-PSSO-G2 | 13 ns | 38ns | 10 ns | 23 ns | 31A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5.5V | 3.1W Ta 200W Tc | 420 mJ | 200V | N-Channel | 2370pF @ 25V | 5.5 V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 107nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IPD95R450P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd95r450p7atma1-datasheets-5597.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 950V | 104W Tc | N-Channel | 1053pF @ 400V | 450m Ω @ 7.2A, 10V | 3.5V @ 360μA | 14A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC010N04LS6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc010n04ls6atma1-datasheets-5550.pdf | 8-PowerTDFN | 26 Weeks | 40V | 3W Ta 150W Tc | N-Channel | 4600pF @ 20V | 1m Ω @ 50A, 10V | 2.3V @ 250μA | 40A Ta 100A Tc | 67nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS23N15DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb23n15dpbf-datasheets-2965.pdf | 150V | 23A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | No | GULL WING | Single | 3.8W | 1 | R-PSSO-G2 | 10 ns | 32ns | 8.4 ns | 18 ns | 23A | 30V | SILICON | DRAIN | SWITCHING | 3.8W Ta 136W Tc | 92A | 0.09Ohm | 260 mJ | 150V | N-Channel | 1200pF @ 25V | 90m Ω @ 14A, 10V | 5.5V @ 250μA | 23A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R180P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd60r180p7atma1-datasheets-5754.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 72W Tc | 53A | 0.18Ohm | 56 mJ | N-Channel | 1081pF @ 400V | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 18A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC077N12NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc077n12ns3gatma1-datasheets-5808.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | 26 ns | 24ns | 10 ns | 41 ns | 98A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 139W Tc | 13.4A | 392A | 0.0077Ohm | 330 mJ | N-Channel | 5700pF @ 60V | 7.7m Ω @ 50A, 10V | 4V @ 110μA | 13.4A Ta 98A Tc | 88nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF1010ESTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf1010estrlpbf-datasheets-4761.pdf | 60V | 84A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | Unknown | 12mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 78ns | 53 ns | 48 ns | 84A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 75A | 60V | N-Channel | 3210pF @ 25V | 4 V | 12m Ω @ 50A, 10V | 4V @ 250μA | 84A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSC100N10NSFGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-bsc100n10nsfgatma1-datasheets-5421.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 156W | 1 | Not Qualified | R-PDSO-F5 | 18 ns | 23ns | 7 ns | 26 ns | 11.4A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 156W Tc | 360A | 377 mJ | N-Channel | 2900pF @ 50V | 10m Ω @ 25A, 10V | 4V @ 110μA | 11.4A Ta 90A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSC009NE2LS5IATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineon-bsc009ne2ls5iatma1-datasheets-5233.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 8 | yes | not_compliant | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.5W | 1 | 150°C | R-PDSO-F5 | 5 ns | 33ns | 19 ns | 27 ns | 40A | 16V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 74W Tc | 400A | 50 mJ | 25V | N-Channel | 3200pF @ 12V | 0.95m Ω @ 30A, 10V | 2V @ 250μA | 40A Ta 100A Tc | 49nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| BSC014N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-bsc014n03lsgatma1-datasheets-4685.pdf | 8-PowerTDFN | Contains Lead | 5 | 3 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 139W | 1 | Not Qualified | R-PDSO-F5 | 13 ns | 8.6ns | 51 ns | 34A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 139W Tc | 400A | 0.0021Ohm | 290 mJ | N-Channel | 10000pF @ 15V | 1.4m Ω @ 30A, 10V | 2.2V @ 250μA | 34A Ta 100A Tc | 131nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSP135H6906XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp135h6327xtsa1-datasheets-6832.pdf | TO-261-4, TO-261AA | 10 Weeks | 600V | 1.8W Ta | N-Channel | 146pF @ 25V | 45 Ω @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8010STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf8010strlpbf-datasheets-5037.pdf | 100V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 15mOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 260W | 1 | R-PSSO-G2 | 15 ns | 130ns | 120 ns | 61 ns | 80A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 260W Tc | 75A | 100V | N-Channel | 3830pF @ 25V | 4 V | 15m Ω @ 45A, 10V | 4V @ 250μA | 80A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF2807ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf2807zpbf-datasheets-8787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 7.4MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 79ns | 45 ns | 40 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 170W Tc | 89A | 75V | N-Channel | 3270pF @ 25V | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF1405STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1405strlpbf-datasheets-5286.pdf | 55V | 131A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | 5.3MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 200W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 13 ns | 190ns | 110 ns | 130 ns | 131A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 130 ns | 75A | 680A | 590 mJ | 55V | N-Channel | 5480pF @ 25V | 5.3m Ω @ 101A, 10V | 4V @ 250μA | 131A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| NVMFS5830NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfs5830nlt1g-datasheets-5311.pdf | DFN | Lead Free | 5 | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | 3.8W | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 3.8W | 1 | FET General Purpose Power | 5.88nF | 22 ns | 32ns | 27 ns | 40 ns | 29A | 20V | DRAIN | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 2.3mOhm | 2.3 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6662TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6662trpbf-datasheets-5082.pdf | 100V | 8.3A | DirectFET™ Isometric MZ | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 12 Weeks | 31MOhm | 7 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 11 ns | 7.5ns | 5.9 ns | 24 ns | 6.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 66A | 39 mJ | 100V | N-Channel | 1360pF @ 25V | 22m Ω @ 8.2A, 10V | 4.9V @ 100μA | 8.3A Ta 47A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF3415STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf3415strlpbf-datasheets-5313.pdf | 150V | 43A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 4.2MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 12 ns | 55ns | 69 ns | 71 ns | 43A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 200W Tc | 390 ns | 590 mJ | 150V | N-Channel | 2400pF @ 25V | 4 V | 42m Ω @ 22A, 10V | 4V @ 250μA | 43A Tc | 200nC @ 10V | 10V | ±20V |
