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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTN62N50L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtn62n50l-datasheets-2243.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 24 Weeks | 4 | yes | UL RECOGNIZED | No | NICKEL | UPPER | UNSPECIFIED | 4 | Single | 800W | 1 | FET General Purpose Power | 36 ns | 85ns | 75 ns | 110 ns | 62A | 30V | SILICON | ISOLATED | SWITCHING | 800W Tc | 5000 mJ | 500V | N-Channel | 11500pF @ 25V | 100m Ω @ 500mA, 20V | 5V @ 250μA | 62A Tc | 550nC @ 20V | 20V | ±30V | |||||||||||||||||||||||||||||||||||||
| FQD3P50TM-AM002BLT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqd3p50tmam002blt-datasheets-2199.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4 Weeks | 500V | 2.5W Ta 50W Tc | P-Channel | 660pF @ 25V | 4.9 Ω @ 1.05A, 10V | 5V @ 250μA | 2.1A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD65N03RG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nthd2102pt1-datasheets-9662.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.3W Ta 50W Tc | 32A | 130A | 0.0146Ohm | 71.7 mJ | N-Channel | 1.4pF @ 20V | 8.4m Ω @ 30A, 10V | 2V @ 250μA | 9.5A Ta 32A Tc | 16nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD30N06S223ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd30n06s223atma2-datasheets-2146.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | No | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 10 ns | 23ns | 18 ns | 24 ns | 30A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 120A | 150 mJ | N-Channel | 901pF @ 25V | 23m Ω @ 21A, 10V | 4V @ 50μA | 30A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK3P50D,RQ(S | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | 60W | 1 | 20ns | 10 ns | 3A | 30V | 500V | 60W Tc | N-Channel | 280pF @ 25V | 3 Ω @ 1.5A, 10V | 4.4V @ 1mA | 3A Ta | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT12N150HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtt12n150hv-datasheets-2159.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | 12A | 1500V | 890W Tc | N-Channel | 3720pF @ 25V | 4.5V @ 250μA | 12A Tc | 106nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C450NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c450nlt3g-datasheets-2161.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 68W Tc | N-Channel | 2100pF @ 20V | 2.8m Ω @ 40A, 10V | 2V @ 250μA | 27A Ta 110A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN100N50Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn100n50q3-datasheets-2164.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 250ns | 50 ns | 82A | 30V | SILICON | ISOLATED | SWITCHING | 960W Tc | 300A | 5000 mJ | 500V | N-Channel | 13800pF @ 25V | 49m Ω @ 50A, 10V | 6.5V @ 8mA | 82A Tc | 255nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFN32N100Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfn32n100q3-datasheets-2167.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 780W | 1 | FET General Purpose Power | 45 ns | 300ns | 54 ns | 28A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 780W Tc | 96A | 0.32Ohm | 3000 mJ | 1kV | N-Channel | 9940pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 8mA | 28A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| MMIX1T132N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-mmix1t132n50p3-datasheets-2170.pdf | 24-PowerSMD, 22 Leads | 30 Weeks | yes | 63A | 500V | 520W Tc | N-Channel | 18600pF @ 25V | 43m Ω @ 66A, 10V | 5V @ 8mA | 63A Tc | 267nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDWS86380-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdws86380f085-datasheets-2174.pdf | 8-PowerTDFN | 47 Weeks | 172.8mg | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 80V | 75W Tj | N-Channel | 1440pF @ 40V | 13.4m Ω @ 50A, 10V | 4V @ 250μA | 50A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD30N03S2L10ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd30n03s2l10atma1-datasheets-2179.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 7 ns | 21ns | 10 ns | 29 ns | 30A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100W Tc | 120A | 0.0146Ohm | 150 mJ | N-Channel | 1200pF @ 25V | 10m Ω @ 30A, 10V | 2V @ 50μA | 30A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| GA50JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | NO | Other Transistors | 50A | N-CHANNEL | 1200V | 583W Tc | 7209pF @ 800V | 25m Ω @ 50A | 100A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL4P2UH7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl4p2uh7-datasheets-4809.pdf | 6-PowerWDFN | Lead Free | 6 | 6 | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL4 | 1 | Single | NOT SPECIFIED | 2.4W | 1 | 9 ns | 21ns | 19 ns | 40 ns | 4A | 8V | SILICON | DRAIN | SWITCHING | 2.4W Tc | 4A | 20V | P-Channel | 510pF @ 10V | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 4A Tc | 4.8nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| NTTFS5CS70NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVGS3130NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntgs3130nt1g-datasheets-9493.pdf | SOT-23-6 | Lead Free | 15 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | 4.2A | 20V | 600mW Ta | N-Channel | 935pF @ 16V | 24m Ω @ 5.6A, 4.5V | 1.4V @ 250μA | 4.2A Ta | 20.3nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD600N65S3R0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcd600n65s3r0-datasheets-2127.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 19 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | 650V | 54W Tc | N-Channel | 465pF @ 400V | 600m Ω @ 3A, 10V | 4.5V @ 600μA | 6A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT32M5LFG-7 | Diodes Incorporated | $1.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt32m5lfg13-datasheets-1969.pdf | 8-PowerVDFN | 24 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.3W Ta | N-Channel | 4066pF @ 15V | 1.7m Ω @ 20A, 10V | 3V @ 250μA | 30A Ta | 67.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP5322N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp5322k1g-datasheets-0855.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | 3 | 18 Weeks | 52.786812mg | 12Ohm | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | Not Qualified | R-PSSO-F3 | 10 ns | 15ns | 15 ns | 20 ns | -260mA | 20V | SILICON | DRAIN | SWITCHING | 220V | 1.6W Ta | 0.26A | 0.9A | -220V | P-Channel | 110pF @ 25V | 12 Ω @ 200mA, 10V | 2.4V @ 1mA | 260mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFR1205TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr1205trpbf-datasheets-3432.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 107W Tc | TO-252AA | 20A | 160A | 0.027Ohm | 210 mJ | N-Channel | 1300pF @ 25V | 27m Ω @ 26A, 10V | 4V @ 250μA | 44A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SKI04044 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski04044-datasheets-2074.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | yes | NOT SPECIFIED | NOT SPECIFIED | 80A | 40V | 90W Tc | N-Channel | 2410pF @ 25V | 5m Ω @ 42.8A, 10V | 2.5V @ 650μA | 80A Tc | 35.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 410pF | 7ns | 4 ns | 10A | 20V | 40V | 25W Tc | N-Channel | 410pF @ 10V | 28mOhm @ 5A, 10V | 3V @ 1mA | 10A Ta | 10nC @ 10V | 28 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS60R400CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 150°C | -40°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips60r400ceakma1-datasheets-2077.pdf | Contains Lead | 3 | 18 Weeks | yes | EAR99 | Halogen Free | NO | SINGLE | THROUGH-HOLE | 1 | R-PSIP-T3 | 600V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | TO-251 | 30A | 0.4Ohm | 210 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVP4424ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/diodesincorporated-zvp4424a-datasheets-0390.pdf | -240V | -200mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 9Ohm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 750mW | 1 | 8 ns | 8ns | 8 ns | 26 ns | 200mA | 40V | SILICON | SWITCHING | 240V | 750mW Ta | 0.2A | P-Channel | 200pF @ 25V | 9 Ω @ 200mA, 10V | 2V @ 1mA | 200mA Ta | 3.5V 10V | ±40V | ||||||||||||||||||||||||||||||||
| SKI07171 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski07171-datasheets-2083.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 46A | 75V | 90W Tc | N-Channel | 2520pF @ 25V | 13.6m Ω @ 22.8A, 10V | 2.5V @ 650μA | 46A Tc | 36.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SKI10297 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski10297-datasheets-2084.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | NOT SPECIFIED | NOT SPECIFIED | 34A | 100V | 90W Tc | N-Channel | 2540pF @ 25V | 27.9m Ω @ 17.1A, 10V | 2.5V @ 650μA | 34A Tc | 35.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN5325N3-G-P002 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/microchiptechnology-tn5325k1g-datasheets-0773.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 18 Weeks | 453.59237mg | yes | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 20 ns | 15ns | 25 ns | 25 ns | 215mA | 20V | SWITCHING | 740mW Ta | 7Ohm | 23 pF | 250V | N-Channel | 110pF @ 25V | 7 Ω @ 1A, 10V | 2V @ 1mA | 215mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5832NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfs5832nlt1g-datasheets-2234.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 3.7W | 1 | FET General Purpose Power | 13 ns | 24ns | 8 ns | 27 ns | 21A | 20V | SILICON | DRAIN | 40V | 40V | 3.7W Ta 127W Tc | 0.0072Ohm | N-Channel | 2700pF @ 25V | 4.2m Ω @ 20A, 10V | 2.4V @ 250μA | 21A Ta | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPD60N10S412ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd60n10s412atma1-datasheets-2098.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 6 ns | 3ns | 13 ns | 9 ns | 60A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 94W Tc | 240A | 0.0122Ohm | 120 mJ | N-Channel | 2470pF @ 25V | 12.2m Ω @ 60A, 10V | 3.5V @ 46μA | 60A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SKI06106 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski06106-datasheets-2079.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | NOT SPECIFIED | NOT SPECIFIED | 57A | 60V | 90W Tc | N-Channel | 2520pF @ 25V | 8.8m Ω @ 28.5A, 10V | 2.5V @ 650μA | 57A Tc | 38.6nC @ 10V | 4.5V 10V | ±20V |
