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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SCT10N120 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~200°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | /files/stmicroelectronics-sct10n120-datasheets-9188.pdf | TO-247-3 | Lead Free | ACTIVE (Last Updated: 7 months ago) | SCT10 | 12A | 1200V | 150W Tc | N-Channel | 290pF @ 400V | 690m Ω @ 6A, 20V | 3.5V @ 250μA | 12A Tc | 22nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX360N15T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk360n15t2-datasheets-2200.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 247 | 1 | yes | EAR99 | AVALANCHE RATED | unknown | 100A | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 150V | 360A | 50 ns | 170ns | 265 ns | 115 ns | 360A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1670W Tc | 900A | 0.004Ohm | N-Channel | 47500pF @ 25V | 4m Ω @ 60A, 10V | 5V @ 8mA | 360A Tc | 715nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STF20N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/stmicroelectronics-stf20n90k5-datasheets-9196.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF20 | 900V | 40W Tc | N-Channel | 1500pF @ 100V | 250m Ω @ 10A, 10V | 5V @ 100μA | 20A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH76P10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixta76p10t-datasheets-1624.pdf | TO-247-3 | 3 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 298W | 1 | Other Transistors | R-PSFM-T3 | 76A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 298W Tc | 230A | 0.024Ohm | P-Channel | 13700pF @ 25V | 25m Ω @ 500mA, 10V | 4V @ 250μA | 76A Tc | 197nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT1N450HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n450hv-datasheets-9122.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | Single | 520W | 1 | FET General Purpose Power | 60ns | 127 ns | 58 ns | 1A | 20V | 4500V | 520W Tc | 1A | 4.5kV | N-Channel | 1730pF @ 25V | 85 Ω @ 50mA, 10V | 6.5V @ 250μA | 1A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH20N50D | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/ixys-ixth20n50d-datasheets-9125.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 85ns | 75 ns | 110 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AA | 50A | 0.33Ohm | 500V | N-Channel | 2500pF @ 25V | 330m Ω @ 10A, 10V | 20A Tc | 125nC @ 10V | Depletion Mode | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB031N08 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb031n08-datasheets-8921.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.762g | 3.1MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 230 ns | 191ns | 121 ns | 335 ns | 235A | 20V | SILICON | DRAIN | SWITCHING | 375W Tc | 940A | 75V | N-Channel | 15160pF @ 25V | 3.1m Ω @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFN140N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn140n30p-datasheets-9135.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | No SVHC | 24mOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 30ns | 20 ns | 100 ns | 115A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 700W Tc | 110A | 300A | 5000 mJ | 300V | N-Channel | 14800pF @ 25V | 24m Ω @ 70A, 10V | 5V @ 8mA | 110A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFP9240PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfp9240pbf-datasheets-9137.pdf | -200V | -12A | TO-247-3 | 15.87mm | 25.11mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 500mOhm | 3 | Tin | No | 1 | Single | 150W | 1 | 150°C | TO-247-3 | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | -12A | 20V | -200V | 200V | -4V | 150W Tc | 300 ns | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPW60R041P6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r041p6fksa1-datasheets-9073.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 29 ns | 27ns | 5 ns | 90 ns | 77.5A | 30V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 481W Tc | 267A | 0.041Ohm | 1954 mJ | N-Channel | 8180pF @ 100V | 41m Ω @ 35.5A, 10V | 4.5V @ 2.96mA | 77.5A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh26n50p-datasheets-9078.pdf | 500V | 26A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | 230MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 20 ns | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 78A | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 4mA | 26A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH120N30X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh120n30x3-datasheets-9080.pdf | TO-247-3 | 19 Weeks | 300V | 735W Tc | N-Channel | 10.5nF @ 25V | 11m Ω @ 60A, 10V | 4.5V @ 4mA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK64N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk64n60p-datasheets-9087.pdf | 600V | 64A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.04kW | 1 | Not Qualified | 23ns | 24 ns | 79 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1040W Tc | 150A | 0.096Ohm | 600V | N-Channel | 12000pF @ 25V | 96m Ω @ 500mA, 10V | 5V @ 8mA | 64A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFK80N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n60p3-datasheets-9089.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | 3 | 1 | Single | 1.3kW | 1 | FET General Purpose Power | 48 ns | 25ns | 8 ns | 87 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1300W Tc | 200A | 0.07Ohm | 2000 mJ | 600V | N-Channel | 13100pF @ 25V | 70m Ω @ 500mA, 10V | 5V @ 8mA | 80A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STW5NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp5nk100z-datasheets-5519.pdf | 1kV | 3.5A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 3.7Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | STW5N | 3 | Single | 125W | 1 | FET General Purpose Power | 22.5 ns | 7.7ns | 19 ns | 51.5 ns | 3.5A | 30V | SILICON | SWITCHING | 1000V | 3.75V | 125W Tc | TO-247AC | 250 mJ | 1kV | N-Channel | 1154pF @ 25V | 3.7 Ω @ 1.75A, 10V | 4.5V @ 100μA | 3.5A Tc | 59nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SQP90P06-07L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp90p0607lge3-datasheets-9098.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 300W Tc | TO-220AB | 120A | 480A | 0.0067Ohm | 320 mJ | P-Channel | 14280pF @ 25V | 6.7m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 270nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN420N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn420n10t-datasheets-9100.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 420A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 1070W Tc | 1000A | 0.0023Ohm | 5000 mJ | N-Channel | 47000pF @ 25V | 2.3m Ω @ 60A, 10V | 5V @ 8mA | 420A Tc | 670nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF150P221XKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf150p221xkma1-datasheets-9108.pdf | TO-247-3 | 150V | 341W Tc | N-Channel | 6000pF @ 75V | 4.5m Ω @ 100A, 10V | 4.6V @ 264μA | 186A | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI540NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irli540npbf-datasheets-9113.pdf | 100V | 20A | TO-220-3 Full Pack | 10.6mm | 9.8mm | 4.8mm | Lead Free | 3 | 14 Weeks | No SVHC | 53mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 42W | 1 | FET General Purpose Power | 2kV | 11 ns | 81ns | 62 ns | 39 ns | 23A | 16V | 100V | SILICON | ISOLATED | SWITCHING | 2V | 54W Tc | TO-220AB | 290 ns | 100V | N-Channel | 1800pF @ 25V | 2 V | 44m Ω @ 12A, 10V | 2V @ 250μA | 23A Tc | 74nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| STH310N10F7-6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sth310n10f72-datasheets-8828.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 15.25mm | 4.8mm | 10.4mm | Lead Free | 6 | No SVHC | 7 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW RESISTANCE | GULL WING | STH310 | Single | 315W | 1 | FET General Purpose Power | R-PSSO-G6 | 62 ns | 108ns | 40 ns | 148 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 3.5V | 315W Tc | 120A | 0.0025Ohm | 100V | N-Channel | 12800pF @ 25V | 2.5m Ω @ 60A, 10V | 3.8V @ 250μA | 180A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF150P220XKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-irf150p220xkma1-datasheets-9053.pdf | TO-247-3 | 18 Weeks | 150V | 556W Tc | N-Channel | 12000pF @ 75V | 2.7m Ω @ 100A, 10V | 4.6V @ 265μA | 203A | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75345P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-lm7918ct-datasheets-7491.pdf | 55V | 75A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 7mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 325W | 1 | FET General Purpose Power | 14 ns | 118ns | 26 ns | 42 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 325W Tc | TO-220AB | 55V | N-Channel | 4000pF @ 25V | 4 V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 275nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTA10P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixta10p50ptrl-datasheets-0774.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 1Ohm | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 300W | 1 | Other Transistors | R-PSSO-G2 | 28ns | 44 ns | 52 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 30A | -500V | P-Channel | 2840pF @ 25V | 1 Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTK120N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtk120n25p-datasheets-9069.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 17 Weeks | No SVHC | 24MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 33ns | 33 ns | 130 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 5V | 700W Tc | 2.5 mJ | 250V | N-Channel | 8000pF @ 25V | 24m Ω @ 60A, 10V | 5V @ 500μA | 120A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N100F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfh6n100f-datasheets-9071.pdf | TO-247-3 | 3 | 30 Weeks | No SVHC | 1.9Ohm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | 8.6ns | 8.3 ns | 31 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 700 mJ | 1kV | N-Channel | 1770pF @ 25V | 1.9 Ω @ 3A, 10V | 5.5V @ 2.5mA | 6A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STW40NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf40nf20-datasheets-3348.pdf | 200V | 40A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STW40N | 3 | Single | 160W | 1 | FET General Purpose Power | 20 ns | 44ns | 22 ns | 74 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 3V | 160W Tc | 0.045Ohm | 200V | N-Channel | 2500pF @ 25V | 45m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP52P10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta52p10p-datasheets-2191.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 29ns | 22 ns | 38 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | TO-220AB | 0.05Ohm | -100V | P-Channel | 2845pF @ 25V | 50m Ω @ 500mA, 10V | 4.5V @ 250μA | 52A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FCH47N60NF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch47n60nf-datasheets-9002.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 15 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | FCH47N60 | Single | 368W | 1 | FET General Purpose Power | 34 ns | 22ns | 4 ns | 117 ns | 45.8A | 30V | SILICON | SWITCHING | 3V | 368W Tc | TO-247AB | 0.065Ohm | 2926 mJ | 600V | N-Channel | 6120pF @ 100V | 65m Ω @ 23.5A, 10V | 4V @ 250μA | 45.8A Tc | 157nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| NDUL03N150CG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-ndul03n150cg-datasheets-9014.pdf | TO-3PL | 43.8mm | 5.5mm | 15.5mm | Lead Free | 3 | 24 Weeks | 6.961991g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 3 | 1 | Single | 3W | 1 | 15 ns | 24ns | 47 ns | 140 ns | 2.5A | 30V | SILICON | 1500V | 3W Ta 50W Tc | 5A | N-Channel | 650pF @ 30V | 10.5 Ω @ 1.25A, 10V | 2.5A Ta | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA6N100D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth6n100d2-datasheets-5417.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 300W Tc | TO-263AA | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 6A Tc | 95nC @ 5V | Depletion Mode | ±20V |
