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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP037N08N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb035n08n3gatma1-datasheets-8879.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | 3 | Single | 214W | 1 | FET General Purpose Power | 23 ns | 79ns | 14 ns | 45 ns | 100A | 20V | 80V | SILICON | SWITCHING | 214W Tc | TO-220AB | 400A | 80V | N-Channel | 8110pF @ 40V | 3.75m Ω @ 100A, 10V | 3.5V @ 155μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFK48N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfn48n50-datasheets-2171.pdf | 500V | 48A | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 20 Weeks | No SVHC | 100mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | FET General Purpose Power | 30 ns | 60ns | 30 ns | 100 ns | 48A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 500W Tc | 500V | N-Channel | 8400pF @ 25V | 4 V | 100m Ω @ 24A, 10V | 4V @ 8mA | 48A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STP10P6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf10p6f6-datasheets-4433.pdf | TO-220-3 | 3 | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | STP10 | Single | 35W | 1 | R-PSFM-T3 | 7ns | 10 ns | 16.5 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 30W Tc | TO-220AB | 40A | 80 mJ | 60V | P-Channel | 340pF @ 48V | 160m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 6.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STP4NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk80zt4-datasheets-3909.pdf | 800V | 3A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 3.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | STP4N | 3 | Single | 80W | 1 | FET General Purpose Power | 13 ns | 12ns | 32 ns | 35 ns | 3A | 30V | SILICON | SWITCHING | 3.75V | 80W Tc | TO-220AB | 3A | 800V | N-Channel | 575pF @ 25V | 3.5 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 22.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FDH50N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdmb668p-datasheets-5578.pdf | TO-247-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 625W Tc | TO-247AD | 48A | 192A | 0.105Ohm | 1868 mJ | N-Channel | 6.46pF @ 25V | 105m Ω @ 24A, 10V | 5V @ 250μA | 48A Tc | 137nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP55NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp55nf06-datasheets-8143.pdf | 60V | 50A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 18mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP55N | 3 | Single | 30W | 1 | FET General Purpose Power | 20 ns | 50ns | 15 ns | 36 ns | 50A | 20V | 60V | SILICON | SWITCHING | 3V | 110W Tc | TO-220AB | 55A | 200A | 60V | N-Channel | 1300pF @ 25V | 3 V | 18m Ω @ 27.5A, 10V | 4V @ 250μA | 50A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STP57N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb57n65m5-datasheets-5392.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 63MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP57N | Single | 250W | 1 | 73 ns | 15ns | 19 ns | 12 ns | 42A | 25V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-220AB | 960 mJ | 650V | N-Channel | 4200pF @ 100V | 63m Ω @ 21A, 10V | 5V @ 250μA | 42A Tc | 98nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| STW56N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw56n60m2-datasheets-8154.pdf | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW56N | 1 | Single | NOT SPECIFIED | 350W | FET General Purpose Power | 150°C | 18 ns | 119 ns | 52A | 25V | 350W Tc | 600V | N-Channel | 3750pF @ 100V | 55m Ω @ 26A, 10V | 4V @ 250μA | 52A Tc | 91nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM55P06-19L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sum55p0619le3-datasheets-8087.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 19mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 125W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 15ns | 230 ns | 80 ns | -5.5A | 20V | SILICON | SWITCHING | 60V | -1V | 3.75W Ta 125W Tc | 55A | -60V | P-Channel | 3500pF @ 25V | 19m Ω @ 30A, 10V | 3V @ 250μA | 55A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB033N10N5LFATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb033n10n5lfatma1-datasheets-7311.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.5mm | 2 | 13 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 179W | 1 | R-PSSO-G2 | 8 ns | 64 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.3V | 179W Tc | 23A | 480A | 0.0033Ohm | 273 mJ | 100V | N-Channel | 460pF @ 50V | 3.3m Ω @ 100A, 10V | 4.1V @ 150μA | 120A Tc | 102nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IGOT60R070D1AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolGaN™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | GaNFET (Gallium Nitride) | ROHS3 Compliant | /files/infineontechnologies-igot60r070d1auma1-datasheets-8012.pdf | 20-PowerSOIC (0.433, 11.00mm Width) | 12 Weeks | 600V | 125W Tc | N-Channel | 380pF @ 400V | 1.6V @ 2.6mA | 31A Tc | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP100N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp100n6f7-datasheets-8179.pdf | TO-220-3 | Lead Free | 3 | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STP100 | NOT SPECIFIED | 1 | R-PSFM-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 125W Tc | TO-220AB | 400A | 0.0056Ohm | 200 mJ | N-Channel | 1980pF @ 25V | 5.6m Ω @ 50A, 10V | 4V @ 250μA | 100A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STW32NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf32nm50n-datasheets-6674.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STW32N | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | R-PSFM-T3 | 9.5ns | 23.6 ns | 110 ns | 22A | 25V | SILICON | SWITCHING | 190W Tc | 88A | 340 mJ | 500V | N-Channel | 1973pF @ 50V | 130m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP75NS04Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp75ns04z-datasheets-8191.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | 11MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP75N | 3 | Single | 110W | 1 | FET General Purpose Power | 16 ns | 248ns | 85 ns | 53 ns | 80A | SILICON | SWITCHING | 110W Tc | TO-220AB | 470 mJ | 33V | N-Channel | 1860pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 50nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||
| STP6NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb6nk90zt4-datasheets-1507.pdf | 900V | 5.8A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | Tin | No | e3 | STP6N | 3 | Single | 140W | 1 | FET General Purpose Power | 17 ns | 45ns | 20 ns | 20 ns | 5.8A | 30V | SILICON | SWITCHING | 3.75V | 140W Tc | TO-220AB | 900V | N-Channel | 1350pF @ 25V | 2 Ω @ 2.9A, 10V | 4.5V @ 100μA | 5.8A Tc | 60.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP8NK80ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp8nk80zfp-datasheets-8200.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.5Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP8N | 3 | Single | 30W | 1 | FET General Purpose Power | 17 ns | 30ns | 28 ns | 48 ns | 6.2A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 24.8A | 800V | N-Channel | 1320pF @ 25V | 1.5 Ω @ 3.1A, 10V | 4.5V @ 100μA | 6.2A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STP16NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp16nf06-datasheets-8092.pdf | 60V | 16A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | 100mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP16N | 3 | Single | 45W | 1 | FET General Purpose Power | 7 ns | 18ns | 6 ns | 17 ns | 16A | 20V | SILICON | SWITCHING | 45W Tc | TO-220AB | 64A | 60V | N-Channel | 315pF @ 25V | 100m Ω @ 8A, 10V | 4V @ 250μA | 16A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDA2712 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6670al-datasheets-8179.pdf | TO-3P-3, SC-65-3 | 3 | unknown | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 357W Tc | 64A | 240A | 0.034Ohm | 245 mJ | N-Channel | 10.175pF @ 25V | 34m Ω @ 40A, 10V | 5V @ 250μA | 64A Tc | 129nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGLD60R070D1AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolGaN™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | /files/infineontechnologies-igld60r070d1auma1-datasheets-7809.pdf | 8-LDFN Exposed Pad | 12 Weeks | 600V | 114W Tc | N-Channel | 380pF @ 400V | 1.6V @ 2.6mA | 15A Tc | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IGT60R190D1SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolGaN™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | /files/infineontechnologies-igt60r190d1satma1-datasheets-7818.pdf | 8-PowerSFN | 12 Weeks | 600V | 55.5W Tc | N-Channel | 157pF @ 400V | 1.6V @ 960μA | 12.5A Tc | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R040C7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipb60r040c7atma1-datasheets-7857.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 4.5mm | 18 Weeks | 1 | 227W | 150°C | PG-TO263-3 | 18.5 ns | 81 ns | 50A | 20V | 650V | 227W Tc | 34mOhm | 600V | N-Channel | 4340pF @ 400V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 50A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R065C7ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r065c7atma2-datasheets-7761.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 171W Tc | N-Channel | 3020pF @ 400V | 65m Ω @ 17.1A, 10V | 4.5V @ 200μA | 33A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9407BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si9407bdyt1ge3-datasheets-7869.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 506.605978mg | No SVHC | 120mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.4W | 1 | Other Transistors | 150°C | 10 ns | 70ns | 30 ns | 35 ns | -4.7A | 20V | SILICON | SWITCHING | 60V | -3V | 2.4W Ta 5W Tc | -60V | P-Channel | 600pF @ 30V | 120m Ω @ 3.2A, 10V | 3V @ 250μA | 4.7A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI7611DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7611dnt1ge3-datasheets-7908.pdf | PowerPAK® 1212-8 | 3.05mm | 1.17mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.7W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 10 ns | 11ns | 9 ns | 30 ns | -18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -1V | 3.7W Ta 39W Tc | 9.3A | 20A | 26 mJ | -40V | P-Channel | 1980pF @ 20V | -3 V | 25m Ω @ 9.3A, 10V | 3V @ 250μA | 18A Tc | 62nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IPT60R028G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-kit2k5wccmtolltobo1-datasheets-4781.pdf | 8-PowerSFN | 2.4mm | 3 | 18 Weeks | yes | EAR99 | PG-HSOF-8 | e3 | Tin (Sn) | YES | SINGLE | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 391W | 1 | 150°C | R-PSSO-F3 | 28 ns | 100 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 391W Tc | 245A | 0.028Ohm | 288 mJ | 600V | N-Channel | 4820pF @ 400V | 28m Ω @ 28.8A, 10V | 4V @ 1.44mA | 75A Tc | 123nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IGT60R070D1ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolGaN™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | /files/infineontechnologies-igt60r070d1atma1-datasheets-7880.pdf | 8-PowerSFN | 12 Weeks | 600V | 125W Tc | N-Channel | 380pF @ 400V | 1.6V @ 2.6mA | 31A Tc | -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP55NF06L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb55nf06lt4-datasheets-9434.pdf | 60V | 55A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 18mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP55N | 3 | Single | 95W | 1 | FET General Purpose Power | 20 ns | 100ns | 20 ns | 40 ns | 55A | 16V | SILICON | DRAIN | SWITCHING | 1.7V | 95W Tc | TO-220AB | 220A | 60V | N-Channel | 1700pF @ 25V | 1.7 V | 18m Ω @ 27.5A, 10V | 1.7V @ 250μA | 55A Tc | 37nC @ 4.5V | 10V 5V | ±16V | |||||||||||||||||||||||||||||||||||
| FQB27P06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqb27p06tm-datasheets-7983.pdf | -60V | -27A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 6 Weeks | 1.31247g | No SVHC | 70MOhm | 3 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 3.75W | 1 | Other Transistors | R-PSSO-G2 | 18 ns | 185ns | 90 ns | 30 ns | -27A | 25V | 60V | SILICON | DRAIN | SWITCHING | -4V | 3.75W Ta 120W Tc | 560 mJ | -60V | P-Channel | 1400pF @ 25V | 70m Ω @ 13.5A, 10V | 4V @ 250μA | 27A Tc | 43nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| IRF9640PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9640pbf-datasheets-8001.pdf | -200V | -11A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 500mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | 150°C | TO-220AB | 1.2nF | 14 ns | 43ns | 38 ns | 39 ns | -11A | 20V | 200V | -4V | 125W Tc | 300 ns | 500mOhm | -200V | P-Channel | 1200pF @ 25V | -4 V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STF2N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std2n95k5-datasheets-7286.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STF2N | 1 | Single | 1 | 8.5 ns | 13.5ns | 32.5 ns | 20.5 ns | 2A | 30V | SILICON | ISOLATED | SWITCHING | 20W Tc | TO-220AB | 2A | 8A | 5Ohm | 50 mJ | 950V | N-Channel | 105pF @ 100V | 5 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 10nC @ 10V | 10V |
