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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQPF3N90 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf3n90-datasheets-8985.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 43W Tc | 2.1A | 8.4A | 450 mJ | N-Channel | 910pF @ 25V | 4.25 Ω @ 1.05A, 10V | 5V @ 250μA | 2.1A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3635-Z-E1-AZ | Rochester Electronics, LLC | $1.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3635ze1az-datasheets-8987.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (MP-3Z) | 200V | N-Channel | 390pF @ 10V | 430mOhm @ 4A, 10V | 4.5V @ 1mA | 8A Tc | 12nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N04S4L04ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd90n04s4l04atma1-datasheets-8969.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 7 ns | 11ns | 28 ns | 22 ns | 90A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 71W Tc | 95 mJ | N-Channel | 4690pF @ 25V | 3.8m Ω @ 90A, 10V | 2.2V @ 35μA | 90A Tc | 60nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||
| IRF730 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-irf730-datasheets-9004.pdf | TO-220-3 | 3 | NO | SINGLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 74W Tc | TO-220AB | 5.5A | 22A | 1Ohm | N-Channel | 700pF @ 25V | 1 Ω @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4099LS-1E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4099ls1e-datasheets-8894.pdf | TO-220-3 Full Pack | TO-220F-3FS | 600V | 2W Ta 35W Tc | N-Channel | 750pF @ 30V | 940mOhm @ 4A, 10V | 6.9A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW50R399CPFKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipw50r399cpfksa1-datasheets-9006.pdf | TO-247-3 | PG-TO247-3 | 560V | 83W Tc | N-Channel | 890pF @ 100V | 399mOhm @ 4.9A, 10V | 3.5V @ 330μA | 9A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP3205 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdp3205-datasheets-8896.pdf | TO-220-3 | 3 | unknown | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 150W Tc | TO-220AB | 100A | 390A | 0.0075Ohm | 365 mJ | N-Channel | 7.73pF @ 25V | 7.5m Ω @ 59A, 10V | 5.5V @ 250μA | 100A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC90N04S53R6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipc90n04s53r6atma1-datasheets-9032.pdf | 8-PowerTDFN | 3 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 63W Tc | 90A | 360A | 0.0044Ohm | 40 mJ | N-Channel | 1950pF @ 25V | 3.6m Ω @ 45A, 10V | 3.4V @ 23μA | 90A Tc | 32.6nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFH8311TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfh8311trpbf-datasheets-8898.pdf | 8-TQFN Exposed Pad | Lead Free | 12 Weeks | 8 | EAR99 | No | 3.6W | 1 | FET General Purpose Power | 21 ns | 26ns | 12 ns | 21 ns | 32A | 20V | Single | 3.6W Ta 96W Tc | 30V | N-Channel | 4960pF @ 10V | 2.1m Ω @ 20A, 10V | 2.35V @ 100μA | 32A Ta 169A Tc | 66nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S2L03AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb80n04s2l03atma1-datasheets-8002.pdf | TO-220-3 | PG-TO220-3-1 | 40V | 300W Tc | N-Channel | 6pF @ 25V | 3.4mOhm @ 80A, 10V | 2V @ 250μA | 80A Tc | 213nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK1560DPP-M0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk1560dppm0t2-datasheets-8911.pdf | TO-220-3 Full Pack | TO-220FL | 150V | 28.5W Tc | N-Channel | 6.72pF @ 25V | 60mOhm @ 10A, 4V | 20A Ta | 52nC @ 4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R310E6AUMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp45n06s409aksa1-datasheets-4426.pdf | 4-PowerTSFN | Thin-Pak (8x8) | 650V | 104W Tc | N-Channel | 950pF @ 100V | 310mOhm @ 4.4A, 10V | 3.5V @ 400μA | 13.1A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7490TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf7490trpbf-datasheets-8647.pdf | 100V | 5.4A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 39MOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | 13 ns | 4.2ns | 11 ns | 51 ns | 5.4A | 20V | 100V | SILICON | SWITCHING | 6.3 mm | 4V | 2.5W Ta | 43A | 100V | N-Channel | 1720pF @ 25V | 4 V | 39m Ω @ 3.2A, 10V | 4V @ 250μA | 5.4A Ta | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| HUF75842S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf76443p3-datasheets-3791.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 230W Tc | 43A | 0.042Ohm | N-Channel | 2.73pF @ 25V | 42m Ω @ 43A, 10V | 4V @ 250μA | 43A Tc | 175nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76437S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76437s3st-datasheets-8946.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 155W Tc | N-Channel | 2.23pF @ 25V | 14mOhm @ 71A, 10V | 3V @ 250μA | 71A Tc | 71nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF46N15 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf46n15-datasheets-8948.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 66W Tc | 25.6A | 102.4A | 0.042Ohm | 650 mJ | N-Channel | 3.25pF @ 25V | 42m Ω @ 12.8A, 10V | 4V @ 250μA | 25.6A Tc | 110nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF8306MTRPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf8306mtrpbf-datasheets-8950.pdf | DirectFET™ Isometric MX | DIRECTFET™ MX | 30V | 2.1W Ta 75W Tc | N-Channel | 4.11pF @ 15V | 2.5mOhm @ 23A, 10V | 2.35V @ 100μA | 23A Ta 140A Tc | 38nC @ 4.5V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2723UT1A-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa2723ut1ae1ay-datasheets-8838.pdf | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 30V | N-Channel | 8.1pF @ 10V | 2.5mOhm @ 17A, 10V | 2.5V @ 1mA | 33A Ta | 64nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC050NE2LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc050ne2lsatma1-datasheets-7831.pdf | 8-PowerTDFN | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 2.2ns | 39A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2V | 2.5W Ta 28W Tc | 60A | 240A | 0.0076Ohm | N-Channel | 760pF @ 12V | 5m Ω @ 30A, 10V | 2V @ 250μA | 39A Ta 58A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF6665TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6665trpbf-datasheets-8849.pdf | 100V | 4.2A | DirectFET™ Isometric SH | 4.826mm | 506μm | 3.95mm | Lead Free | 2 | 12 Weeks | No SVHC | 3 | EAR99 | HIGH RELIABILITY | Tin | No | e1 | BOTTOM | Single | 42W | 1 | FET General Purpose Power | R-XBCC-N2 | 7.4 ns | 2.8ns | 4.3 ns | 14 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 5V | 2.2W Ta 42W Tc | 0.062Ohm | 100V | N-Channel | 530pF @ 25V | 5 V | 62m Ω @ 5A, 10V | 5V @ 250μA | 4.2A Ta 19A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FQPF18N20V2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf18n20v2ydtu-datasheets-8777.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 40W Tc | 18A | 72A | 0.14Ohm | 340 mJ | N-Channel | 1.08pF @ 25V | 140m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSP129H6906XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp129h6327xtsa1-datasheets-9195.pdf | TO-261-4, TO-261AA | 10 Weeks | 240V | 1.8W Ta | N-Channel | 108pF @ 25V | 6 Ω @ 350mA, 10V | 1V @ 108μA | 350mA Ta | 5.7nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA6N80 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa6n80-datasheets-8869.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 185W Tc | 6.3A | 25.2A | 680 mJ | N-Channel | 1.5pF @ 25V | 1.95 Ω @ 3.15A, 10V | 5V @ 250μA | 6.3A Tc | 31nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R255P6AUMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipl60r255p6auma1-datasheets-8764.pdf | 4-PowerTSFN | PG-VSON-4 | 600V | 126W Tc | N-Channel | 1.45pF @ 100V | 255mOhm @ 6.4A, 10V | 4.5V @ 530μA | 15.9A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5826NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfs5826nlt1g-datasheets-8766.pdf | Lead Free | 5 | 38 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | 3.6W | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 850pF | 9 ns | 32ns | 24 ns | 15 ns | 8A | 20V | DRAIN | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 26A | 130A | 0.032Ohm | 20 mJ | 24 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| FQPF18N20V2YDTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf18n20v2ydtu-datasheets-8777.pdf | TO-220-3 Full Pack, Formed Leads | TO-220F-3 (Y-Forming) | 200V | 40W Tc | N-Channel | 1.08pF @ 25V | 140mOhm @ 9A, 10V | 5V @ 250μA | 18A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN80R1K2P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn80r1k2p7atma1-datasheets-8709.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 6.8W Tc | N-Channel | 300pF @ 500V | 1.2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4.5A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD50N03S2L06T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd50n03s2l06t-datasheets-8789.pdf | 30V | 50A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | PG-TO252-3 | 2.53nF | 19ns | 50A | 30V | 136W Tc | N-Channel | 2530pF @ 25V | 6.4mOhm @ 50A, 10V | 2V @ 85μA | 50A Tc | 68nC @ 10V | 6.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB42AN15A0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdc655an-datasheets-4111.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | 150V | 150W Tc | N-Channel | 2.15pF @ 25V | 42mOhm @ 12A, 10V | 4V @ 250μA | 5A Ta 35A Tc | 39nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76633P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76633s3st-datasheets-8040.pdf | TO-220-3 | TO-220-3 | 100V | 145W Tc | N-Channel | 1.82pF @ 25V | 35mOhm @ 39A, 10V | 3V @ 250μA | 39A Tc | 67nC @ 10V | 4.5V 10V | ±16V |
