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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NDD60N360U1-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ncv8668abd250r2g-datasheets-5102.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 600V | 114W Tc | N-Channel | 790pF @ 50V | 360mOhm @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 26nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4088LS-1E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4088ls1e-datasheets-9230.pdf | TO-220-3 Full Pack | TO-220F-3FS | 650V | 2W Ta 37W Tc | N-Channel | 1000pF @ 30V | 850mOhm @ 5.5A, 10V | 7.5A Tc | 37.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDD60N360U1-35G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndp6030pl-datasheets-4617.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 600V | 114W Tc | N-Channel | 790pF @ 50V | 360mOhm @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 26nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ651 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sj655-datasheets-7758.pdf | TO-220-3 Full Pack | TO-220ML | 60V | 2W Ta 25W Tc | P-Channel | 2200pF @ 20V | 60mOhm @ 10A, 10V | 20A Ta | 45nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75344S3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75344s3-datasheets-9275.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 285W Tc | TO-263AB | 75A | 0.008Ohm | N-Channel | 3.2pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 210nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FQB70N08TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd20n06letm-datasheets-4346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 3.75W Ta 155W Tc | 70A | 280A | 0.017Ohm | 1150 mJ | N-Channel | 2.7pF @ 25V | 17m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 98nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| IPA60R520CPXKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb45n04s4l08atma1-datasheets-4765.pdf | TO-220-3 Full Pack | PG-TO220-FP | 600V | 30W Tc | N-Channel | 630pF @ 100V | 520mOhm @ 3.8A, 10V | 3.5V @ 250μA | 6.8A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD22N08S2L50ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd22n08s2l50atma1-datasheets-8952.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 27A | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 75W Tc | 108A | 0.065Ohm | 94 mJ | N-Channel | 630pF @ 25V | 50m Ω @ 50A, 10V | 2V @ 31μA | 27A Tc | 33nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSF024N03LT3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsf024n03lt3gxuma1-datasheets-9249.pdf | 3-WDSON | 3 | 3 | yes | EAR99 | No | BOTTOM | 3 | 2.2W | 1 | 5.7 ns | 5.6ns | 4.8 ns | 29 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.2W Ta 42W Tc | 400A | N-Channel | 5500pF @ 15V | 2.4m Ω @ 20A, 10V | 2.2V @ 250μA | 15A Ta 106A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDP16N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdpf5n50tydtu-datasheets-5415.pdf | TO-220-3 | TO-220-3 | 500V | 200W Tc | N-Channel | 1.945pF @ 25V | 380mOhm @ 8A, 10V | 5V @ 250μA | 16A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7831TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7831trpbf-datasheets-9253.pdf | 30V | 21A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 3.6MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 2.5W | 1 | FET General Purpose Power | 18 ns | 10ns | 5.3 ns | 17 ns | 21A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.35V | 2.5W Ta | 62 ns | 30V | N-Channel | 6240pF @ 15V | 2.35 V | 3.6m Ω @ 20A, 10V | 2.35V @ 250μA | 21A Ta | 60nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||
| FQI9N25CTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi9n25ctu-datasheets-9315.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 250V | 3.13W Ta 74W Tc | N-Channel | 710pF @ 25V | 430mOhm @ 4.4A, 10V | 4V @ 250μA | 8.8A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75645P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75645p3-datasheets-9183.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 310W Tc | TO-220AB | 75A | 0.014Ohm | N-Channel | 3.79pF @ 25V | 14m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 238nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQB32N12V2TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqb32n12v2tm-datasheets-9195.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | FAST SWITCHING | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 120V | 3.75W Ta 150W Tc | 32A | 128A | 0.05Ohm | 439 mJ | N-Channel | 1.86pF @ 25V | 50m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| BSC196N10NSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc196n10nsgatma1-datasheets-9008.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 78W | 1 | Not Qualified | R-PDSO-F5 | 22ns | 45A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 78W Tc | 60 mJ | N-Channel | 2300pF @ 50V | 19.6m Ω @ 45A, 10V | 4V @ 42μA | 8.5A Ta 45A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| FDS7066ASN3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7066asn3-datasheets-9061.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3W Ta | 19A | 60A | 0.0048Ohm | N-Channel | 2.46pF @ 15V | 4.8m Ω @ 19A, 10V | 3V @ 1mA | 19A Ta | 62nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDS7064N | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds8958-datasheets-2346.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 16A | 60A | 0.0075Ohm | N-Channel | 3.355pF @ 15V | 7.5m Ω @ 16A, 4.5V | 2V @ 250μA | 16A Ta | 48nC @ 4.5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| FDD8444L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdh5500-datasheets-3108.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE | DRAIN | SWITCHING | 40V | 40V | 153W Tc | TO-252AA | 16A | 0.0107Ohm | 295 mJ | N-Channel | 5.53pF @ 25V | 5.2m Ω @ 50A, 10V | 3V @ 250μA | 16A Ta 50A Tc | 60nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| HUFA75339P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75339p3-datasheets-9095.pdf | TO-220-3 | 3 | yes | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | TO-220AB | 75A | 0.012Ohm | N-Channel | 2pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 130nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDS6673AZ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6673az-datasheets-9105.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 14.5A | 0.0072Ohm | P-Channel | 4.48pF @ 15V | 7.2m Ω @ 14.5A, 10V | 3V @ 250μA | 14.5A Ta | 118nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| RJK0346DPA-00#J0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-PowerWDFN | 8-WPAK | 30V | 65W Tc | N-Channel | 7.65pF @ 10V | 2mOhm @ 32.5A, 10V | 65A Ta | 49nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC252N10NSFGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc252n10nsfgatma1-datasheets-9073.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 78W | 1 | Not Qualified | R-PDSO-F5 | 21ns | 7.2A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 78W Tc | 0.0252Ohm | N-Channel | 1100pF @ 50V | 25.2m Ω @ 20A, 10V | 4V @ 43μA | 7.2A Ta 40A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| FQA6N70 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa6n70-datasheets-9124.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700V | 700V | 152W Tc | 6.4A | 25.6A | 600 mJ | N-Channel | 1.4pF @ 25V | 1.5 Ω @ 3.2A, 10V | 5V @ 250μA | 6.4A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPD068P03L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd068p03l3gatma1-datasheets-8979.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18 Weeks | 3 | yes | EAR99 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 100W Tc | 280A | 0.0068Ohm | 149 mJ | P-Channel | 7720pF @ 15V | 6.8m Ω @ 70A, 10V | 2V @ 150μA | 70A Tc | 91nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPI100N06S3L-03 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi100n06s3l03-datasheets-9141.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 300W Tc | 100A | 400A | 0.0046Ohm | 690 mJ | N-Channel | 26.24pF @ 25V | 3m Ω @ 80A, 10V | 2.2V @ 230μA | 100A Tc | 550nC @ 10V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| BSC084P03NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-bsc084p03ns3gatma1-datasheets-9143.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 16 ns | 134ns | 8 ns | 33 ns | 14.5A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.5W Ta 69W Tc | 200A | P-Channel | 4785pF @ 15V | 8.4m Ω @ 50A, 10V | 3.1V @ 105μA | 14.9A Ta 78.6A Tc | 58nC @ 10V | 6V 10V | ±25V | ||||||||||||||||||||||||||
| BSZ0901NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz0901nsatma1-datasheets-9151.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PDSO-N3 | 5 ns | 7.2ns | 4.6 ns | 27 ns | 25A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 50W Tc | 22A | 160A | 0.0026Ohm | 150 mJ | N-Channel | 2850pF @ 15V | 2m Ω @ 20A, 10V | 2.2V @ 250μA | 22A Ta 40A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| AUIRF3007 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-auirf3007-datasheets-9179.pdf | TO-220-3 | TO-220AB | 75V | 200W Tc | N-Channel | 3.27pF @ 25V | 12.6mOhm @ 48A, 10V | 4V @ 250μA | 75A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75631P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75631p3-datasheets-9050.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 120W Tc | TO-220AB | 33A | 0.04Ohm | N-Channel | 1.22pF @ 25V | 40m Ω @ 33A, 10V | 4V @ 250μA | 33A Tc | 79nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP80N04S2L03AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb80n04s2l03atma1-datasheets-8002.pdf | TO-220-3 | PG-TO220-3-1 | 40V | 300W Tc | N-Channel | 6pF @ 25V | 3.4mOhm @ 80A, 10V | 2V @ 250μA | 80A Tc | 213nC @ 10V | 4.5V 10V | ±20V |
