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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PMCM650VNEZ | Rochester Electronics, LLC | $1.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 6-XFBGA, WLCSP | 6-WLCSP (1.48x.98) | 12V | 556mW Ta 12.5W Tc | N-Channel | 1.06pF @ 6V | 25mOhm @ 3A, 4.5V | 900mV @ 250μA | 6.4A Ta | 15.4nC @ 4.5V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N70 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqu10n20ltu-datasheets-4812.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 48W Tc | 3.5A | 14A | 600 mJ | N-Channel | 1.4pF @ 25V | 1.5 Ω @ 1.75A, 10V | 5V @ 250μA | 3.5A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76633S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76633s3st-datasheets-8040.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 145W Tc | 39A | 0.037Ohm | N-Channel | 1.82pF @ 25V | 35m Ω @ 39A, 10V | 3V @ 250μA | 39A Tc | 67nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| HAT2279N-EL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hat2279nele-datasheets-8066.pdf | 8-PowerSOIC (0.154, 3.90mm Width) | 8-LFPAK-iV | 80V | 25W Tc | N-Channel | 3.52pF @ 10V | 12.3mOhm @ 15A, 10V | 30A Ta | 60nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF8N60CYDTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu3n40tu-datasheets-5346.pdf | TO-220-3 Full Pack, Formed Leads | 3 | yes | FAST SWITCHING | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 48W Tc | TO-220AB | 7.5A | 30A | 230 mJ | N-Channel | 1.255pF @ 25V | 1.2 Ω @ 3.75A, 10V | 4V @ 250μA | 7.5A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| FQA7N80C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa7n80c-datasheets-8079.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 198W Tc | 7A | 28A | 580 mJ | N-Channel | 1.68pF @ 25V | 1.9 Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S2L-H5 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ss9013gta-datasheets-4010.pdf | TO-220-3 | 3 | AVALANCHE RATED | unknown | MATTE TIN | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 300W Tc | TO-220AB | 80A | 320A | 0.0065Ohm | 700 mJ | N-Channel | 6.64pF @ 25V | 5m Ω @ 80A, 10V | 2V @ 230μA | 80A Tc | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPDH6N03LAG | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdh6n03lag-datasheets-7964.pdf | 25V | 50A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 71W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 5.4ns | 4.2 ns | 23 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 71W Tc | TO-252AA | 0.006Ohm | 150 mJ | 25V | N-Channel | 2390pF @ 15V | 6m Ω @ 50A, 10V | 2V @ 30μA | 50A Tc | 19nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| RJK0329DPB-01#J0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rii02114b01-datasheets-0057.pdf | SC-100, SOT-669 | LFPAK | 30V | 60W Tc | N-Channel | 5.33pF @ 10V | 2.3mOhm @ 27.5A, 10V | 2.5V @ 1mA | 55A Ta | 35nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9024NTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfu9024npbf-datasheets-9012.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 38W Tc | TO-252AA | 11A | 44A | 0.175Ohm | 62 mJ | P-Channel | 350pF @ 25V | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDD6672A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdfc3n108-datasheets-4665.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | FAST SWITCHING | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.2W Ta 70W Tc | 65A | 100A | 0.008Ohm | N-Channel | 5.07pF @ 15V | 8m Ω @ 14A, 10V | 2V @ 250μA | 65A Ta | 46nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB80N04S2L03ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipb80n04s2l03atma1-datasheets-8002.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 40V | 300W Tc | N-Channel | 6pF @ 25V | 3.1mOhm @ 80A, 10V | 2V @ 250μA | 80A Tc | 213nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL100HS121 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl100hs121-datasheets-7961.pdf | 6-VDFN Exposed Pad | 18 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 100V | 11.5W Tc | N-Channel | 440pF @ 50V | 42m Ω @ 6.7A, 10V | 2.3V @ 10μA | 11A Tc | 5.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS7764A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7764a-datasheets-8007.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 15A | 50A | 0.0075Ohm | N-Channel | 3.451pF @ 15V | 7.5m Ω @ 15A, 4.5V | 2V @ 250μA | 15A Ta | 40nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS7096N3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7096n3-datasheets-8009.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 14A | 60A | 0.009Ohm | N-Channel | 1.587pF @ 15V | 9m Ω @ 14A, 10V | 3V @ 250μA | 14A Ta | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S204AKSA2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi80n04s204aksa2-datasheets-8011.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3-1 | 40V | 300W Tc | N-Channel | 5.3pF @ 25V | 3.7mOhm @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0902NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz0902nsatma1-datasheets-7857.pdf | 8-PowerTDFN | Contains Lead | 18 Weeks | No SVHC | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 2.1W | 1 | 4.2 ns | 5.2ns | 3.6 ns | 21 ns | 19A | 20V | 30V | 2V | 2.1W Ta 48W Tc | N-Channel | 1700pF @ 15V | 2.6m Ω @ 20A, 10V | 2V @ 250μA | 19A Ta 40A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L05AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipp80n06s2l05aksa1-datasheets-7925.pdf | TO-220-3 | PG-TO220-3-1 | 55V | 300W Tc | N-Channel | 5.7pF @ 25V | 4.8mOhm @ 80A, 10V | 2V @ 250μA | 80A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB9N50CFTM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqd3n40tf-datasheets-4552.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | FAST SWITCHING | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | 3 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 173W Tc | 9A | 36A | 0.85Ohm | 300 mJ | N-Channel | 1.03pF @ 25V | 850m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7402TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irf7402trpbf-datasheets-7696.pdf | 20V | 6.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | 8 | FAST SWITCHING | No | DUAL | GULL WING | 2.5W | 1 | 5.1 ns | 47ns | 32 ns | 24 ns | 6.8A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 54A | 0.035Ohm | 20V | N-Channel | 650pF @ 15V | 35m Ω @ 4.1A, 4.5V | 700mV @ 250μA | 6.8A Ta | 22nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| NVTFS5826NLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvtfs5826nltag-datasheets-0710.pdf | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 23 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | 3.2W | DUAL | FLAT | 8 | Single | 22W | 1 | FET General Purpose Power | S-PDSO-F5 | 850pF | 9 ns | 29ns | 21 ns | 14 ns | 20A | 20V | DRAIN | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 7.6A | 24mOhm | 20 mJ | 60V | 24 mΩ | ||||||||||||||||||||||||||||||||||||||||
| IPD26N06S2L35ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd26n06s2l35atma2-datasheets-7948.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 30A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 120A | 0.047Ohm | 80 mJ | N-Channel | 621pF @ 25V | 35m Ω @ 13A, 10V | 2V @ 26μA | 30A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQPF12N60T | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqpf12n60-datasheets-5500.pdf | TO-220-3 Full Pack | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 55W Tc | 5.8A | 23A | 0.7Ohm | 790 mJ | N-Channel | 1.9pF @ 25V | 700m Ω @ 2.9A, 10V | 5V @ 250μA | 5.8A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4854NST3G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SENSEFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntmfs4854nst3g-datasheets-7726.pdf | 8-PowerTDFN | SO-8FL | 25V | 900mW Ta 86.2W Tc | N-Channel | 4.83pF @ 12V | 2.5mOhm @ 15A, 10V | 2.5V @ 250μA | 15.2A Ta 149A Tc | 85nC @ 11.5V | 3.2V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807VTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf7807vtrpbf-datasheets-7642.pdf | 30V | 8.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 10 Weeks | 25MOhm | 8 | EAR99 | No | 2.5W | 1 | FET General Purpose Power | 6.3 ns | 1.2ns | 2.2 ns | 11 ns | 8.3A | 20V | Single | 2.5W Ta | 30V | N-Channel | 25m Ω @ 7A, 4.5V | 3V @ 250μA | 8.3A Ta | 14nC @ 5V | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPI90R800C3XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi90r800c3xksa1-datasheets-7755.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 900V | 104W Tc | N-Channel | 1.1pF @ 100V | 800mOhm @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ655 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sj655-datasheets-7757.pdf | TO-220-3 Full Pack | TO-220ML | 100V | 2W Ta 25W Tc | P-Channel | 2.09pF @ 20V | 136mOhm @ 6A, 10V | 12A Ta | 41nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8848NZ | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp6670al-datasheets-5533.pdf | 8-PowerTDFN | 5 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | NO LEAD | 260 | 8 | 30 | 1 | COMMERCIAL | R-XDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.5W Ta 104W Tc | 22.8A | 90A | 0.0031Ohm | 480 mJ | N-Channel | 8.075pF @ 20V | 3.1m Ω @ 22.8A, 10V | 3V @ 250μA | 22.8A Ta 49A Tc | 152nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSC042N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-bsc042n03msgatma1-datasheets-7771.pdf | 8-PowerTDFN | 5 | 39 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 57W Tc | 17A | 372A | 0.0054Ohm | 40 mJ | N-Channel | 4300pF @ 15V | 4.2m Ω @ 30A, 10V | 2V @ 250μA | 17A Ta 93A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD15N06S2L64ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd15n06s2l64atma2-datasheets-7550.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 47W Tc | 19A | 76A | 0.085Ohm | 43 mJ | N-Channel | 354pF @ 25V | 64m Ω @ 13A, 10V | 2V @ 14μA | 19A Tc | 13nC @ 10V | 4.5V 10V | ±20V |
