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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPC70N04S5L4R2ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc70n04s5l4r2atma1-datasheets-8409.pdf | 8-PowerTDFN | 3 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 50W Tc | 70A | 280A | 0.0061Ohm | 32 mJ | N-Channel | 1600pF @ 25V | 4.2m Ω @ 35A, 10V | 2V @ 17μA | 70A Tc | 30nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| HUF75332P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75545s3s-datasheets-4292.pdf | TO-220-3 | 3 | yes | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 145W Tc | TO-220AB | 60A | 0.019Ohm | N-Channel | 1.3pF @ 25V | 19m Ω @ 60A, 10V | 4V @ 250μA | 60A Tc | 85nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS5692Z | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6694-datasheets-5027.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | FAST SWITCHING | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 2.5W Ta | 5.8A | 0.024Ohm | N-Channel | 1.025pF @ 25V | 24m Ω @ 5.8A, 10V | 3V @ 250μA | 5.8A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSC22DN20NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-bsc22dn20ns3gatma1-datasheets-8453.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | Tin | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 34W | 1 | Not Qualified | R-PDSO-F5 | 4ns | 7A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 34W Tc | 7A | 0.225Ohm | 30 mJ | N-Channel | 430pF @ 100V | 225m Ω @ 3.5A, 10V | 4V @ 13μA | 7A Tc | 5.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDFS2P102A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdj1027p-datasheets-2090.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | EAR99 | 8541.29.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 900mW Ta | 3.3A | 10A | 0.125Ohm | P-Channel | 182pF @ 10V | 125m Ω @ 3.3A, 10V | 3V @ 250μA | 3.3A Ta | 3nC @ 5V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc030n03msgatma1-datasheets-8327.pdf | 8-PowerTDFN | Contains Lead | 8 | 26 Weeks | 8 | no | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 69W | 1 | Not Qualified | 10ns | 21A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 69W Tc | 400A | 75 mJ | N-Channel | 5700pF @ 15V | 3m Ω @ 30A, 10V | 2V @ 250μA | 21A Ta 100A Tc | 73nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP80N04S2H4AKSA2 | Rochester Electronics, LLC | $5.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi80n04s2h4aksa2-datasheets-8151.pdf | TO-220-3 | PG-TO220-3-1 | 40V | 300W Tc | N-Channel | 4.4pF @ 25V | 4mOhm @ 80A, 10V | 4V @ 250μA | 80A Tc | 148nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF644STRRPBF | Vishay Siliconix | $2.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644spbf-datasheets-3712.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | 250V | 3.1W Ta 125W Tc | 280mOhm | N-Channel | 1300pF @ 25V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S2H4AKSA2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi80n04s2h4aksa2-datasheets-8151.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3-1 | 40V | 300W Tc | N-Channel | 4.4pF @ 25V | 3.7mOhm @ 80A, 10V | 4V @ 250μA | 80A Tc | 148nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3410TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irlr3410trpbf-datasheets-2107.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | TO-252AA | 17A | 60A | 0.125Ohm | 150 mJ | N-Channel | 800pF @ 25V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IPN95R3K7P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn95r3k7p7atma1-datasheets-8172.pdf | TO-261-3 | 18 Weeks | 950V | 6W Tc | N-Channel | 196pF @ 400V | 3.7 Ω @ 800mA, 10V | 3.5V @ 40μA | 2A Tc | 6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS2510SDC | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench®, SyncFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp15n50-datasheets-4613.pdf | 8-PowerTDFN | Dual Cool™56 | 25V | 3.3W Ta 60W Tc | N-Channel | 2.78pF @ 13V | 2.9mOhm @ 23A, 10V | 3V @ 1mA | 28A Ta 49A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB6670AL | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds2070n3-datasheets-4113.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 68W Tc | 80A | 240A | 0.0065Ohm | 114 mJ | N-Channel | 2.44pF @ 15V | 6.5m Ω @ 40A, 10V | 3V @ 250μA | 80A Ta | 33nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPP80N06S08AKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spb18p06p-datasheets-4522.pdf | TO-220-3 | PG-TO220-3-1 | 55V | 300W Tc | N-Channel | 3.66pF @ 25V | 8mOhm @ 80A, 10V | 4V @ 250μA | 80A Tc | 187nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7805ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7805ztrpbf-datasheets-8126.pdf | 30V | 16A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 6.8MOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | 2.5W | 1 | FET General Purpose Power | 11 ns | 10ns | 3.7 ns | 14 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 2.5W Ta | MS-012AA | 120A | 72 mJ | 30V | N-Channel | 2080pF @ 15V | 2.25 V | 6.8m Ω @ 16A, 10V | 2.25V @ 250μA | 16A Ta | 27nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRLHM630TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlhm630trpbf-datasheets-8249.pdf | 8-VQFN Exposed Pad | 3.3mm | 1mm | 3.3mm | Lead Free | 5 | 12 Weeks | No SVHC | 4.5MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 37W | 1 | FET General Purpose Power | S-PDSO-N5 | 9.1 ns | 32ns | 43 ns | 65 ns | 21A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800mV | 2.7W Ta 37W Tc | 30V | N-Channel | 3170pF @ 25V | 800 mV | 3.5m Ω @ 20A, 4.5V | 1.1V @ 50μA | 21A Ta 40A Tc | 62nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
| FDS7296N3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdu2572-datasheets-8104.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 15A | 60A | 0.008Ohm | 189 mJ | N-Channel | 1.54pF @ 15V | 8m Ω @ 15A, 10V | 3V @ 250μA | 15A Ta | 32nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDD6670AL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdd8750-datasheets-4556.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 83W Ta | 84A | 100A | 0.005Ohm | 370 mJ | N-Channel | 3.845pF @ 15V | 5m Ω @ 18A, 10V | 3V @ 250μA | 84A Ta | 56nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDD24AN06LA0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdd6776a-datasheets-4596.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 75W Tc | TO-252AA | 7.1A | 0.019Ohm | 32 mJ | N-Channel | 1.85pF @ 25V | 19m Ω @ 40A, 10V | 2V @ 250μA | 7.1A Ta 40A Tc | 21nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3303TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3303trpbf-datasheets-8180.pdf | 30V | 33A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | 31mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 57W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 99ns | 28 ns | 16 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 57W Tc | TO-252AA | 20A | 95 mJ | 30V | N-Channel | 750pF @ 25V | 31m Ω @ 18A, 10V | 4V @ 250μA | 33A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| BSZ0904NSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsz0904nsiatma1-datasheets-8105.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | FET General Purpose Powers | R-PDSO-N3 | 3.3 ns | 4.4ns | 3 ns | 16 ns | 18A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 37W Tc | 40A | 0.0057Ohm | 20 mJ | N-Channel | 1463pF @ 15V | 4m Ω @ 30A, 10V | 2V @ 250μA | 18A Ta 40A Tc | 11nC @ 4.5V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FDS6688 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7096n3-datasheets-8010.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 16A | 0.006Ohm | N-Channel | 3.888pF @ 15V | 6m Ω @ 16A, 10V | 3V @ 250μA | 16A Ta | 56nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQP16N25C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp5n30-datasheets-4826.pdf | TO-220-3 | TO-220-3 | 250V | 139W Tc | N-Channel | 1.08pF @ 25V | 270mOhm @ 7.8A, 10V | 4V @ 250μA | 15.6A Tc | 53.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7401TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7401trpbf-datasheets-8013.pdf | 20V | 8.7A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 22mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | DUAL | GULL WING | Single | 2.5W | 1 | 13 ns | 72ns | 92 ns | 65 ns | 8.7A | 12V | 20V | SILICON | SWITCHING | 6.3 mm | 700mV | 2.5W Ta | 35A | 20V | N-Channel | 1600pF @ 15V | 700 mV | 22m Ω @ 4.1A, 4.5V | 700mV @ 250μA | 8.7A Ta | 48nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| PMCM650VNEZ | Rochester Electronics, LLC | $1.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 6-XFBGA, WLCSP | 6-WLCSP (1.48x.98) | 12V | 556mW Ta 12.5W Tc | N-Channel | 1.06pF @ 6V | 25mOhm @ 3A, 4.5V | 900mV @ 250μA | 6.4A Ta | 15.4nC @ 4.5V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N70 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqu10n20ltu-datasheets-4812.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 48W Tc | 3.5A | 14A | 600 mJ | N-Channel | 1.4pF @ 25V | 1.5 Ω @ 1.75A, 10V | 5V @ 250μA | 3.5A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76633S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76633s3st-datasheets-8040.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 145W Tc | 39A | 0.037Ohm | N-Channel | 1.82pF @ 25V | 35m Ω @ 39A, 10V | 3V @ 250μA | 39A Tc | 67nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2279N-EL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hat2279nele-datasheets-8066.pdf | 8-PowerSOIC (0.154, 3.90mm Width) | 8-LFPAK-iV | 80V | 25W Tc | N-Channel | 3.52pF @ 10V | 12.3mOhm @ 15A, 10V | 30A Ta | 60nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF8N60CYDTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu3n40tu-datasheets-5346.pdf | TO-220-3 Full Pack, Formed Leads | 3 | yes | FAST SWITCHING | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 48W Tc | TO-220AB | 7.5A | 30A | 230 mJ | N-Channel | 1.255pF @ 25V | 1.2 Ω @ 3.75A, 10V | 4V @ 250μA | 7.5A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQA7N80C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa7n80c-datasheets-8079.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 198W Tc | 7A | 28A | 580 mJ | N-Channel | 1.68pF @ 25V | 1.9 Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 35nC @ 10V | 10V | ±30V |
