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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| ISL9N302AP3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-isl9n302ap3-datasheets-8814.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 345W Tc | TO-220AB | 75A | 0.0033Ohm | N-Channel | 11pF @ 15V | 2.5m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 300nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SPP07N65C3XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp07n65c3xksa1-datasheets-8816.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD5N50TM | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi13n06tu-datasheets-4442.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5W Ta 50W Tc | 3.5A | 14A | 300 mJ | N-Channel | 610pF @ 25V | 1.8 Ω @ 1.75A, 10V | 5V @ 250μA | 3.5A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| UPA2723UT1A-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa2723ut1ae1ay-datasheets-8838.pdf | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 30V | N-Channel | 8.1pF @ 10V | 2.5mOhm @ 17A, 10V | 2.5V @ 1mA | 33A Ta | 64nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN70R360P7SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn70r360p7satma1-datasheets-8147.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 7.2W Tc | 0.36Ohm | N-Channel | 517pF @ 400V | 360m Ω @ 3A, 10V | 3.5V @ 150μA | 12.5A Tc | 16.4nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| HUFA76645S3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa76645s3st-datasheets-8690.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 310W Tc | 75A | 0.015Ohm | N-Channel | 4.4pF @ 25V | 14m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 153nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf9z24nstrlpbf-datasheets-8674.pdf | -55V | -12A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 45W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 55ns | 37 ns | 23 ns | -12A | 20V | -55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 4V | 3.8W Ta 45W Tc | 48A | 96 mJ | -55V | P-Channel | 350pF @ 25V | 4 V | 175m Ω @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| HUF75339G3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75339g3-datasheets-8542.pdf | TO-247-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 200W Tc | 70A | 0.012Ohm | N-Channel | 2pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 130nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSF030NE2LQXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-bsf030ne2lqxuma1-datasheets-8544.pdf | 3-WDSON | 2 | 26 Weeks | No SVHC | 6 | yes | EAR99 | Silver | No | 8541.29.00.95 | e4 | BOTTOM | 2 | 1 | R-MBCC-N2 | 2.8 ns | 3.4ns | 2.6 ns | 18 ns | 24A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2V | 2.2W Ta 28W Tc | 75A | 300A | 0.0041Ohm | 50 mJ | N-Channel | 1700pF @ 12V | 3m Ω @ 30A, 10V | 2V @ 250μA | 24A Ta 75A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF7469TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7469trpbf-datasheets-8042.pdf | 40V | 9A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 17MOhm | 8 | No | DUAL | GULL WING | Single | 2.5W | 1 | 11 ns | 2.2ns | 3.5 ns | 14 ns | 9A | 20V | SILICON | SWITCHING | 3V | 2.5W Ta | 9A | 73A | 40V | N-Channel | 2000pF @ 20V | 3 V | 17m Ω @ 9A, 10V | 3V @ 250μA | 9A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSZ22DN20NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz22dn20ns3gatma1-datasheets-8570.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 34W | 1 | Not Qualified | S-PDSO-N5 | 4ns | 7A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34W Tc | 7A | 0.225Ohm | 30 mJ | N-Channel | 430pF @ 100V | 225m Ω @ 3.5A, 10V | 4V @ 13μA | 7A Tc | 5.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FQAF44N10 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf44n10-datasheets-8624.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 85W Tc | 33A | 132A | 0.039Ohm | 530 mJ | N-Channel | 1.8pF @ 25V | 39m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 62nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| IPD040N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd040n03lgatma1-datasheets-8626.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 79W | 1 | R-PSSO-G2 | 7.4 ns | 6.8ns | 4.2 ns | 27 ns | 90A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 79W Tc | 89A | 400A | 0.0059Ohm | 60 mJ | N-Channel | 3900pF @ 15V | 4m Ω @ 30A, 10V | 2.2V @ 250μA | 90A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRLHM620TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlhm620trpbf-datasheets-8336.pdf | 8-PowerTDFN | 3.2766mm | 990.6μm | 3.3mm | Lead Free | 5 | 12 Weeks | No SVHC | 3.5MOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | Single | 37W | 1 | FET General Purpose Power | S-PDSO-N5 | 7.5 ns | 25ns | 37 ns | 57 ns | 26A | 12V | SILICON | DRAIN | SWITCHING | 800mV | 2.7W Ta 37W Tc | 20V | N-Channel | 3620pF @ 10V | 800 mV | 2.5m Ω @ 20A, 4.5V | 1.1V @ 50μA | 26A Ta 40A Tc | 78nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||
| SPP12N50C3XKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spp12n50c3xksa1-datasheets-8654.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTB30P06VT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mtb30p06vt4g-datasheets-8656.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 3W Ta 125W Tc | P-Channel | 2.19pF @ 25V | 80mOhm @ 15A, 10V | 4V @ 250μA | 30A Tc | 80nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80R1K4P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd80r1k4p7atma1-datasheets-8657.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 32W Tc | 8.9A | 8 mJ | N-Channel | 250pF @ 500V | 1.4 Ω @ 1.4A, 10V | 3.5V @ 700μA | 4A Tc | 10nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPN60R360P7SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn60r360p7satma1-datasheets-8208.pdf | TO-261-3 | 1.8mm | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 7W | 1 | 150°C | R-PDSO-G3 | 8 ns | 42 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 7W Tc | 0.36Ohm | 600V | N-Channel | 555pF @ 400V | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDB14AN06LA0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb14an06la0-datasheets-8684.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | yes | unknown | NOT SPECIFIED | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 125W Tc | TO-220AB | 10A | 0.012Ohm | 46 mJ | N-Channel | 2.9pF @ 25V | 11.6m Ω @ 67A, 10V | 3V @ 250μA | 10A Ta 67A Tc | 31nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSC22DN20NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-bsc22dn20ns3gatma1-datasheets-8453.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | Tin | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 34W | 1 | Not Qualified | R-PDSO-F5 | 4ns | 7A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 34W Tc | 7A | 0.225Ohm | 30 mJ | N-Channel | 430pF @ 100V | 225m Ω @ 3.5A, 10V | 4V @ 13μA | 7A Tc | 5.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SPB12N50C3ATMA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-spb12n50c3atma1-datasheets-8478.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 560V | 125W Tc | N-Channel | 1.2pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7807trpbf-datasheets-8459.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 4.05mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 25MOhm | 8 | No | DUAL | GULL WING | 1 | Single | 2.5W | 1 | 150°C | 12 ns | 17ns | 6 ns | 25 ns | 8.3A | 12V | 30V | SILICON | SWITCHING | 6.3 mm | 1V | 2.5W Ta | 66A | 30V | N-Channel | 1 V | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||
| IRLR6225TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr6225trpbf-datasheets-8439.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | No SVHC | 4MOhm | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 63W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.7 ns | 37ns | 52 ns | 63 ns | 100A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 63W Tc | TO-252AA | 42A | 400A | 20V | N-Channel | 3770pF @ 10V | 800 mV | 4m Ω @ 21A, 4.5V | 1.1V @ 50μA | 100A Tc | 72nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||
| BSZ033NE2LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz033ne2ls5atma1-datasheets-8369.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | EAR99 | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 40A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 30W Tc | 160A | 0.0041Ohm | 20 mJ | N-Channel | 1230pF @ 12V | 3.3m Ω @ 20A, 10V | 2V @ 250μA | 18A Ta 40A Tc | 18.3nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPD50R800CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipd50r800cebtma1-datasheets-8242.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 40W Tc | 5A | 15.5A | 0.8Ohm | 83 mJ | N-Channel | 280pF @ 100V | 800m Ω @ 1.5A, 13V | 3.5V @ 130μA | 5A Tc | 12.4nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQAF19N20L | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqaf19n20l-datasheets-8392.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 85W Tc | 16A | 64A | 0.14Ohm | 250 mJ | N-Channel | 2.2pF @ 25V | 140m Ω @ 8A, 10V | 2V @ 250μA | 16A Tc | 35nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| HUF75631SK8T | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75631sk8t-datasheets-8394.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.5W Ta | MS-012AA | 5.5A | 0.039Ohm | N-Channel | 1.225pF @ 25V | 39m Ω @ 5.5A, 10V | 4V @ 250μA | 5.5A Ta | 79nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQI12N60CTU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqi4n20tu-datasheets-4510.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | unknown | NO | SINGLE | 3 | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 3.13W Ta 225W Tc | 12A | 48A | 0.65Ohm | 870 mJ | N-Channel | 2.29pF @ 25V | 650m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD75N04S406ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd75n04s406atma1-datasheets-8272.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 58W Tc | 75A | 300A | 0.0059Ohm | 72 mJ | N-Channel | 2550pF @ 25V | 5.9m Ω @ 75A, 10V | 4V @ 26μA | 75A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQU3P20TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu3p20tu-datasheets-8406.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 2.5W Ta 37W Tc | 2.4A | 9.6A | 150 mJ | P-Channel | 250pF @ 25V | 2.7 Ω @ 1.2A, 10V | 5V @ 250μA | 2.4A Tc | 8nC @ 10V | 10V | ±30V |
