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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFS350A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfs350a-datasheets-5037.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400V | 400V | 92W Tc | 11.5A | 68A | 0.3Ohm | 1134 mJ | N-Channel | 2.78pF @ 25V | 300m Ω @ 5.75A, 10V | 4V @ 250μA | 11.5A Tc | 131nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRL7486MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl7486mtrpbf-datasheets-4818.pdf | DirectFET™ Isometric ME | 6.35mm | 700μm | 5.05mm | Lead Free | 6 | 12 Weeks | Unknown | 2 | EAR99 | BOTTOM | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-XBCC-N6 | 35 ns | 54 ns | 209A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 1.8V | 104W Tc | 836A | 190 mJ | N-Channel | 6904pF @ 25V | 1.25m Ω @ 123A, 10V | 2.5V @ 150μA | 209A Tc | 111nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPD110N12N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipd110n12n3gatma1-datasheets-4552.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 16 ns | 8 ns | 24 ns | 75A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 136W Tc | 0.011Ohm | 120 mJ | N-Channel | 4310pF @ 60V | 11m Ω @ 75A, 10V | 3V @ 83μA (Typ) | 75A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NDP7061 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-ndp7061-datasheets-4714.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 130W Tc | TO-220AB | 64A | 190A | 0.016Ohm | 500 mJ | N-Channel | 1.93pF @ 25V | 16m Ω @ 35A, 10V | 4V @ 250μA | 64A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| RJK60S4DPP-E0#T2 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-rjk60s4dppe0t2-datasheets-4716.pdf | TO-220-3 Full Pack | TO-220FP | 600V | 29.9W Tc | N-Channel | 988pF @ 25V | 290mOhm @ 8A, 10V | 16A Tc | 18nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC040N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc040n08ns5atma1-datasheets-4694.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 506.605978mg | 8 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 104W | 1 | 150°C | R-PDSO-F5 | 14 ns | 8ns | 6 ns | 25 ns | 100A | 20V | 80V | SILICON | DRAIN | SWITCHING | 3V | 2.5W Ta 104W Tc | 400A | 0.004Ohm | 80V | N-Channel | 3900pF @ 40V | 4m Ω @ 50A, 10V | 3.8V @ 67μA | 100A Tc | 54nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||
| IRFH5004TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfh5004trpbf-datasheets-4577.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 13 ns | 39ns | 16 ns | 28 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.6W Ta 156W Tc | 400A | 0.0026Ohm | 340 mJ | 40V | N-Channel | 4490pF @ 20V | 4 V | 2.6m Ω @ 50A, 10V | 4V @ 150μA | 28A Ta 100A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IRF6643TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6643trpbf-datasheets-4633.pdf | DirectFET™ Isometric MZ | 6.35mm | 508μm | 5.0546mm | Lead Free | 3 | 12 Weeks | No SVHC | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 9.2 ns | 5ns | 4.4 ns | 13 ns | 6.2A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 2.8W Ta 89W Tc | 76A | 150V | N-Channel | 2340pF @ 25V | 34.5m Ω @ 7.6A, 10V | 4.9V @ 150μA | 6.2A Ta 35A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRFS750A | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-irg4pc50fdepbf-datasheets-0216.pdf | TO-220-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 400V | 400V | 49W Tc | 8.4A | 60A | 0.3Ohm | 1210 mJ | N-Channel | 2.78pF @ 25V | 300m Ω @ 4.2A, 10V | 4V @ 250μA | 8.4A Tc | 131nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF6775MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf6775mtrpbf-datasheets-4650.pdf | DirectFET™ Isometric MZ | 6.35mm | 508μm | 5.0546mm | 3 | 12 Weeks | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 2.8W | 1 | FET General Purpose Power | R-XBCC-N3 | 5.9 ns | 7.8ns | 15 ns | 5.8 ns | 4.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 2.8W Ta 89W Tc | 28A | 39A | 33 mJ | 150V | N-Channel | 1411pF @ 25V | 56m Ω @ 5.6A, 10V | 5V @ 100μA | 4.9A Ta 28A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| HUF75344P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-huf75344p3-datasheets-4774.pdf | TO-220-3 | 3 | yes | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 285W Tc | TO-220AB | 75A | 0.008Ohm | N-Channel | 3.2pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 210nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF6618TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf6618trpbf-datasheets-4776.pdf | 30V | 30A | DirectFET™ Isometric MT | 6.35mm | 508μm | 5.0546mm | Lead Free | 3 | 12 Weeks | No SVHC | 2.2MOhm | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 30 | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 21 ns | 71ns | 8.1 ns | 27 ns | 170mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.64V | 2.8W Ta 89W Tc | 29A | 240A | 30V | N-Channel | 5640pF @ 15V | 2.2m Ω @ 30A, 10V | 2.35V @ 250μA | 30A Ta 170A Tc | 65nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| FDA15N65 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fda15n65-datasheets-4803.pdf | TO-3P-3, SC-65-3 | TO-3PN | 650V | 260W Tc | N-Channel | 3.095pF @ 25V | 440mOhm @ 8A, 10V | 5V @ 250μA | 16A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7675M2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf7675m2tr-datasheets-4785.pdf | DirectFET™ Isometric M2 | Lead Free | 3 | 12 Weeks | No SVHC | 7 | EAR99 | No | BOTTOM | 45W | 1 | FET General Purpose Power | R-XBCC-N3 | 10 ns | 13ns | 7.5 ns | 14 ns | 4.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 4V | 2.7W Ta 45W Tc | 90A | 0.056Ohm | 150V | N-Channel | 1360pF @ 25V | 56m Ω @ 11A, 10V | 5V @ 100μA | 4.4A Ta 18A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NP82N04MUG-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np82n04mugs18ay-datasheets-4814.pdf | TO-220-3 | TO-220-3 | 40V | 1.8W Ta 143W Tc | N-Channel | 9.75pF @ 25V | 4.2mOhm @ 41A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI023NE7N3 G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi023ne7n3g-datasheets-4817.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 75V | 300W Tc | N-Channel | 14.4pF @ 37.5V | 2.3mOhm @ 100A, 10V | 3.8V @ 273μA | 120A Tc | 206nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R280CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd60r280cfd7atma1-datasheets-4851.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 51W Tc | 9A | 31A | 0.28Ohm | 36 mJ | N-Channel | 807pF @ 400V | 280m Ω @ 3.6A, 10V | 4.5V @ 180μA | 9A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NP82N04MLG-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np82n04mlgs18ay-datasheets-4692.pdf | TO-220-3 | TO-220-3 | 40V | 1.8W Ta 143W Tc | N-Channel | 9pF @ 25V | 4.2mOhm @ 41A, 10V | 2.5V @ 250μA | 82A Tc | 150nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC100N04S51R9ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipc100n04s51r9atma1-datasheets-3779.pdf | 8-PowerTDFN | 3 | 16 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 100W Tc | 100A | 400A | 0.0023Ohm | 130 mJ | N-Channel | 3770pF @ 25V | 1.9m Ω @ 50A, 10V | 3.4V @ 50μA | 100A Tc | 65nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFS3107PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfs3107pbf-datasheets-4586.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 75V | 370W Tc | N-Channel | 9.37pF @ 50V | 3mOhm @ 140A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS3170N7 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds3170n7-datasheets-4587.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3W Ta | 6.7A | 60A | 0.026Ohm | 360 mJ | N-Channel | 2.714pF @ 50V | 26m Ω @ 6.7A, 10V | 4V @ 250μA | 6.7A Ta | 77nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDP15N50 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp15n50-datasheets-4612.pdf | TO-220-3 | TO-220-3 | 500V | 300W Tc | N-Channel | 1.85pF @ 25V | 380mOhm @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 41nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISL9N302AS3ST | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-isl9n302as3st-datasheets-4614.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 345W Tc | 75A | 0.0033Ohm | N-Channel | 11pF @ 15V | 2.3m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 300nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NDP6030PL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndp6030pl-datasheets-4616.pdf | TO-220-3 | TO-220-3 | 30V | 75W Tc | P-Channel | 1.57pF @ 15V | 25mOhm @ 19A, 10V | 2V @ 250μA | 30A Tc | 36nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75345P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-hufa75345p3-datasheets-4618.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 325W Tc | TO-220AB | 75A | 0.007Ohm | N-Channel | 4pF @ 25V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 275nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BTS282ZAKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bts282zaksa1-datasheets-4629.pdf | TO-220-7 | P-TO220-7-3 | 49V | 300W Tc | N-Channel | 4.8pF @ 25V | 6.5mOhm @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA13N50C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa13n50c-datasheets-4631.pdf | TO-3P-3, SC-65-3 | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 218W Tc | 13.5A | 54A | 0.48Ohm | 860 mJ | N-Channel | 2.055pF @ 25V | 480m Ω @ 6.75A, 10V | 4V @ 250μA | 13.5A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFH5020TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfh5020trpbf-datasheets-4642.pdf | 8-PowerTDFN | 6mm | 1.05mm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 55MOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 1 | 3.6W | 1 | FET General Purpose Power | 150°C | R-PDSO-N5 | 9.3 ns | 7.7ns | 6 ns | 21 ns | 5.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5V | 3.6W Ta 8.3W Tc | 43A | 63A | 320 mJ | 200V | N-Channel | 2290pF @ 100V | 55m Ω @ 7.5A, 10V | 5V @ 150μA | 5.1A Ta | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| FDD16AN08A0_NF054 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6670as-datasheets-4037.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 75V | 135W Tc | N-Channel | 1.874pF @ 25V | 16mOhm @ 50A, 10V | 4V @ 250μA | 9A Ta 50A Tc | 47nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5215TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfh5215trpbf-datasheets-4211.pdf | 8-VQFN Exposed Pad | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 104W | 1 | FET General Purpose Power | R-PDSO-N5 | 6.7 ns | 6.3ns | 2.9 ns | 11 ns | 5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5V | 3.6W Ta 104W Tc | 5A | 96 mJ | 150V | N-Channel | 1350pF @ 50V | 5 V | 58m Ω @ 16A, 10V | 5V @ 100μA | 5A Ta 27A Tc | 32nC @ 10V | 10V | ±20V |
