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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BTS282ZAKSA1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bts282zaksa1-datasheets-4629.pdf | TO-220-7 | P-TO220-7-3 | 49V | 300W Tc | N-Channel | 4.8pF @ 25V | 6.5mOhm @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA13N50C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa13n50c-datasheets-4631.pdf | TO-3P-3, SC-65-3 | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 218W Tc | 13.5A | 54A | 0.48Ohm | 860 mJ | N-Channel | 2.055pF @ 25V | 480m Ω @ 6.75A, 10V | 4V @ 250μA | 13.5A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5020TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfh5020trpbf-datasheets-4642.pdf | 8-PowerTDFN | 6mm | 1.05mm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 55MOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 1 | 3.6W | 1 | FET General Purpose Power | 150°C | R-PDSO-N5 | 9.3 ns | 7.7ns | 6 ns | 21 ns | 5.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5V | 3.6W Ta 8.3W Tc | 43A | 63A | 320 mJ | 200V | N-Channel | 2290pF @ 100V | 55m Ω @ 7.5A, 10V | 5V @ 150μA | 5.1A Ta | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| FDD16AN08A0_NF054 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb6670as-datasheets-4037.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 75V | 135W Tc | N-Channel | 1.874pF @ 25V | 16mOhm @ 50A, 10V | 4V @ 250μA | 9A Ta 50A Tc | 47nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5215TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfh5215trpbf-datasheets-4211.pdf | 8-VQFN Exposed Pad | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 104W | 1 | FET General Purpose Power | R-PDSO-N5 | 6.7 ns | 6.3ns | 2.9 ns | 11 ns | 5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5V | 3.6W Ta 104W Tc | 5A | 96 mJ | 150V | N-Channel | 1350pF @ 50V | 5 V | 58m Ω @ 16A, 10V | 5V @ 100μA | 5A Ta 27A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| RJK0301DPB-00#J0 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | SC-100, SOT-669 | LFPAK | 30V | 65W Tc | N-Channel | 5pF @ 10V | 2.8mOhm @ 30A, 10V | 60A Ta | 32nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6613TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6613trpbf-datasheets-4520.pdf | 40V | 23A | DirectFET™ Isometric MT | 6.35mm | 508μm | 5.0546mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.4MOhm | 5 | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 30 | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 18 ns | 47ns | 4.9 ns | 27 ns | 150mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.25V | 2.8W Ta 89W Tc | 200 mJ | 40V | N-Channel | 5950pF @ 15V | 3.4m Ω @ 23A, 10V | 2.25V @ 250μA | 23A Ta 150A Tc | 63nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| BSC0500NSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0500nsiatma1-datasheets-4391.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | yes | not_compliant | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 100A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 69W Tc | 35A | 400A | 0.0017Ohm | 40 mJ | N-Channel | 3300pF @ 15V | 1.3m Ω @ 30A, 10V | 2V @ 250μA | 35A Ta 100A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| UPA2732UT1A-E1-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa2732ut1ae1ay-datasheets-4409.pdf | 8-VDFN Exposed Pad | 8-DFN3333 (3.3x3.3) | 30V | 1.5W Ta | P-Channel | 3.28pF @ 10V | 3.7mOhm @ 20A, 10V | 40A Ta | 133nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R360P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r360p7atma1-datasheets-3649.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | PG-TO252-3 | 600V | 41W Tc | 305mOhm | N-Channel | 555pF @ 400V | 360mOhm @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB2572 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdb2572-datasheets-4414.pdf | 150V | 29A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.31247g | 54MOhm | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 135W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 14ns | 14 ns | 31 ns | 29A | 20V | SILICON | DRAIN | SWITCHING | 135W Tc | 4A | 36 mJ | 150V | N-Channel | 1770pF @ 25V | 54m Ω @ 9A, 10V | 4V @ 250μA | 4A Ta 29A Tc | 34nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| NDBA180N10BT4H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ndba180n10bt4h-datasheets-4430.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263) | 100V | 200W Tc | N-Channel | 6.95pF @ 50V | 2.8mOhm @ 50A, 15V | 4V @ 1mA | 180A Ta | 95nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4066-1E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk40661e-datasheets-4432.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262-3 | 60V | 1.65W Ta 90W Tc | N-Channel | 12500pF @ 20V | 4.7mOhm @ 50A, 10V | 100A Ta | 220nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS2170N3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds2170n3-datasheets-4433.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 3W Ta | 0.128Ohm | N-Channel | 1.292pF @ 100V | 128m Ω @ 3A, 10V | 4.5V @ 250μA | 3A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQP7N80 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqp7n80-datasheets-4435.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 167W Tc | TO-220AB | 6.6A | 26.4A | 580 mJ | N-Channel | 1.85pF @ 25V | 1.5 Ω @ 3.3A, 10V | 5V @ 250μA | 6.6A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFP460C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irfp460c-datasheets-4475.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 235W Tc | 20A | 80A | 0.24Ohm | 1050 mJ | N-Channel | 6pF @ 25V | 240m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 170nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS2170N7 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds6064n3-datasheets-3480.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3W Ta | 3A | 20A | 0.128Ohm | 400 mJ | N-Channel | 1.292pF @ 100V | 128m Ω @ 3A, 10V | 4.5V @ 250μA | 3A Ta | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRL2203NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irl2203nstrlpbf-datasheets-4378.pdf | 30V | 116A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 7MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 160ns | 66 ns | 23 ns | 116A | 16V | 30V | SILICON | DRAIN | SWITCHING | 3V | 3.8W Ta 180W Tc | 84 ns | 75A | 400A | 290 mJ | 30V | N-Channel | 3290pF @ 25V | 3 V | 7m Ω @ 60A, 10V | 3V @ 250μA | 116A Tc | 60nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||
| FQA10N60C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqa10n60c-datasheets-4499.pdf | TO-3P-3, SC-65-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 192W Tc | 10A | 40A | 0.73Ohm | 700 mJ | N-Channel | 2.04pF @ 25V | 730m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 57nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI50R140CP | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ipi50r140cp-datasheets-4508.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 550V | 192W Tc | N-Channel | 2.54pF @ 100V | 140mOhm @ 14A, 10V | 3.5V @ 930μA | 23A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC052N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc052n08ns5atma1-datasheets-4510.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 506.605978mg | 8 | yes | not_compliant | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.5W | 1 | 150°C | R-PDSO-F5 | 12 ns | 7ns | 5 ns | 19 ns | 19A | 20V | 80V | SILICON | DRAIN | SWITCHING | 2.5W Ta 83W Tc | 0.0052Ohm | 70 mJ | 80V | N-Channel | 2900pF @ 40V | 5.2m Ω @ 47.5A, 10V | 3.8V @ 49μA | 95A Tc | 40nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTB6410ANG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntb6410ang-datasheets-4518.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 188W Tc | N-Channel | 4.5pF @ 25V | 13mOhm @ 76A, 10V | 4V @ 250μA | 76A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB039N06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb039n06-datasheets-4247.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | 60V | 231W Tc | N-Channel | 8.235pF @ 25V | 3.9mOhm @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 133nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75639S3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75639s3-datasheets-4367.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | 56A | 0.025Ohm | N-Channel | 2pF @ 25V | 25m Ω @ 56A, 10V | 4V @ 250μA | 56A Tc | 130nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6299S | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds6982s-datasheets-5558.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3W Ta | 21A | 0.0039Ohm | N-Channel | 3.88pF @ 15V | 3.9m Ω @ 21A, 10V | 3V @ 1mA | 21A Ta | 81nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NP80N04MLG-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np80n04mlgs18ay-datasheets-4258.pdf | TO-220-3 | TO-220 | 40V | 1.8W Ta 115W Tc | N-Channel | 6.9pF @ 25V | 4.8mOhm @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 135nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTB50P03HDL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mtb50p03hdlt4-datasheets-4053.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | AVALANCHE RATED | e0 | TIN LEAD | YES | SINGLE | GULL WING | 240 | 3 | 30 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 50A | 150A | 0.025Ohm | 1250 mJ | P-Channel | 4.9pF @ 25V | 25m Ω @ 25A, 5V | 2V @ 250μA | 50A Tc | 100nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5053TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfh5053trpbf-datasheets-4270.pdf | 8-PowerVDFN | 5.9944mm | 939.8μm | 5mm | Lead Free | 3 | 12 Weeks | No SVHC | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 30 | 3.1W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N3 | 8.6 ns | 14.6ns | 9.9 ns | 18 ns | 9.3mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.7V | 3.1W Ta 8.3W Tc | 9.3A | 75A | 100V | N-Channel | 1510pF @ 50V | 3.7 V | 18m Ω @ 9.3A, 10V | 4.9V @ 100μA | 9.3A Ta 46A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| HUF75345P3 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-huf75345p3-datasheets-4283.pdf | TO-220-3 | 3 | yes | e0 | TIN LEAD | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 325W Tc | TO-220AB | 75A | 0.007Ohm | N-Channel | 4pF @ 25V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 275nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS7088N7 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds7088n7-datasheets-4285.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 23A | 60A | 0.003Ohm | N-Channel | 3.845pF @ 15V | 3m Ω @ 23A, 10V | 3V @ 250μA | 23A Ta | 48nC @ 5V | 4.5V 10V | ±20V |
