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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDP5680 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fdr8308p-datasheets-2146.pdf | TO-220-3 | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 65W Tc | TO-220AB | 40A | 120A | 0.02Ohm | 90 mJ | N-Channel | 1.85pF @ 25V | 20m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 46nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDS4070N3 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds4070n3-datasheets-3438.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta | 15.3A | 60A | 0.0075Ohm | 310 mJ | N-Channel | 2.819pF @ 20V | 7.5m Ω @ 15.3A, 10V | 5V @ 250μA | 15.3A Ta | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfz46nstrlpbf-datasheets-3189.pdf | 55V | 53A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 16.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 76ns | 57 ns | 52 ns | 53A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 107W Tc | 55V | N-Channel | 1696pF @ 25V | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 53A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BFL4037-1E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-bfn24e6327htsa1-datasheets-4401.pdf | TO-220-3 Full Pack | TO-220F-3FS | 500V | 2W Ta 40W Tc | N-Channel | 1200pF @ 30V | 430mOhm @ 8A, 10V | 11A Tc | 48.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF34N25 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fqaf34n25-datasheets-3312.pdf | TO-3P-3 Full Pack | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 100W Tc | 21.7A | 86.8A | 0.085Ohm | 700 mJ | N-Channel | 2.75pF @ 25V | 85m Ω @ 10.9A, 10V | 5V @ 250μA | 21.7A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTB6411ANG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntb6411ang-datasheets-3314.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 217W Tc | 72A | 285A | 0.014Ohm | 470 mJ | N-Channel | 3.7pF @ 25V | 14m Ω @ 72A, 10V | 4V @ 250μA | 77A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4825NFET1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntmfs4825nfet1g-datasheets-3333.pdf | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 30V | 950mW Ta 96.2W Tc | N-Channel | 5.66pF @ 15V | 2mOhm @ 22A, 10V | 2.5V @ 1mA | 17A Ta 171A Tc | 40.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLL014NTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-auirll014ntr-datasheets-3150.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | 9 Weeks | No SVHC | 4 | EAR99 | No | 1W | 1 | FET General Purpose Power | 5.1 ns | 4.9ns | 2.9 ns | 14 ns | 2A | 16V | Single | 2V | 1W Ta | 2.8A | 55V | N-Channel | 230pF @ 25V | 140m Ω @ 2A, 10V | 2V @ 250μA | 2A Ta | 14nC @ 10V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDB5690 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdb5690-datasheets-3354.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | 60V | 58W Tc | N-Channel | 1.12pF @ 25V | 27mOhm @ 16A, 10V | 4V @ 250μA | 32A Tc | 33nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS5U36TR | ROHM Semiconductor | $1.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | SOT-23-5 Thin, TSOT-23-5 | Lead Free | 5 | 20 Weeks | 5 | EAR99 | No | DUAL | GULL WING | Single | 900mW | 1 | FET General Purpose Power | 6 ns | 15ns | 15 ns | 30 ns | 2.5A | 10V | SILICON | SWITCHING | 1.25W Ta | 0.104Ohm | 20V | N-Channel | 280pF @ 10V | 81m Ω @ 2.5A, 4.5V | 1.3V @ 1mA | 2.5A Ta | 3.5nC @ 4.5V | Schottky Diode (Isolated) | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| NP80N03MLE-S18-AY | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-np80n03mles18ay-datasheets-3370.pdf | TO-220-3 | TO-220 | 30V | 1.8W Ta 120W Tc | N-Channel | 3.9pF @ 25V | 7mOhm @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 72nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB6411ANT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntb6411ang-datasheets-3314.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100V | 217W Tc | N-Channel | 3.7pF @ 25V | 14mOhm @ 72A, 10V | 4V @ 250μA | 77A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ40N04S5L2R8ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipz40n04s5l2r8atma1-datasheets-3228.pdf | 8-PowerVDFN | 1.15mm | Contains Lead | 3 | 16 Weeks | 8 | yes | EAR99 | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 71W | 1 | 175°C | R-PDSO-N3 | 4 ns | 20 ns | 40A | 16V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 71W Tc | 40V | N-Channel | 2800pF @ 25V | 2.8m Ω @ 20A, 10V | 2V @ 30μA | 40A Tc | 52nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPD530N15N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd530n15n3gatma1-datasheets-3316.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | EAR99 | not_compliant | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 21A | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 68W Tc | 84A | 60 mJ | N-Channel | 887pF @ 75V | 53m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSO080P03SHXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bso080p03shxuma1-datasheets-3349.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | No SVHC | 8 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 15 ns | 22ns | 110 ns | 130 ns | 12.6A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | -1.5V | 1.79W Ta | 60A | P-Channel | 5890pF @ 25V | 8m Ω @ 14.9A, 10V | 2.2V @ 250μA | 12.6A Ta | 136nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| IPD95R1K2P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd95r1k2p7atma1-datasheets-3392.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 950V | 52W Tc | N-Channel | 478pF @ 400V | 1.2 Ω @ 2.7A, 10V | 3.5V @ 140μA | 6A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC098N10NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc098n10ns5atma1-datasheets-3111.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 69W | 1 | 150°C | R-PDSO-F5 | 10 ns | 5ns | 17 ns | 11A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 69W Tc | 240A | 30 mJ | 100V | N-Channel | 2100pF @ 50V | 9.8m Ω @ 30A, 10V | 3.8V @ 36μA | 60A Tc | 28nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPL60R650P6SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl60r650p6satma1-datasheets-3173.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 75.891673mg | 8 | yes | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 11 ns | 7ns | 14 ns | 33 ns | 6.7A | 30V | 600V | SILICON | DRAIN | SWITCHING | 56.8W Tc | 0.65Ohm | 600V | N-Channel | 557pF @ 100V | 650m Ω @ 2.4A, 10V | 4.5V @ 200μA | 6.7A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| DMN6069SE-13 | Diodes Incorporated | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn6069se13-datasheets-2572.pdf | TO-261-4, TO-261AA | 4 | 22 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.2W Ta | 4.3A | 25A | 0.069Ohm | N-Channel | 825pF @ 30V | 69m Ω @ 3A, 10V | 3V @ 250μA | 4.3A Ta 10A Tc | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS3670 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds3670-datasheets-3038.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.5W Ta | 6.3A | 0.03Ohm | N-Channel | 2.49pF @ 50V | 32m Ω @ 6.3A, 10V | 4V @ 250μA | 6.3A Ta | 80nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ240N12NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz240n12ns3gatma1-datasheets-3054.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 66W | 1 | FET General Purpose Powers | Not Qualified | S-PDSO-N5 | 4ns | 37A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 66W Tc | 0.024Ohm | N-Channel | 1900pF @ 60V | 24m Ω @ 20A, 10V | 4V @ 35μA | 37A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDS4072N7 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds4072n7-datasheets-3062.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | unknown | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta | 12.4A | 60A | 0.009Ohm | 200 mJ | N-Channel | 4.299pF @ 20V | 9m Ω @ 13.7A, 10V | 3V @ 250μA | 12.4A Ta | 46nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDI8441 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdi8441-datasheets-3075.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 40V | 300W Tc | N-Channel | 15pF @ 25V | 2.7mOhm @ 80A, 10V | 4V @ 250μA | 26A Ta 80A Tc | 280nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7456TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf7456trpbf-datasheets-2737.pdf | 20V | 16A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 6.5mOhm | 8 | EAR99 | AVALANCHE RATED | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | 20 ns | 25ns | 52 ns | 50 ns | 16A | 12V | 20V | SILICON | SWITCHING | 2V | 2.5W Ta | 72 ns | 250 mJ | 20V | N-Channel | 3640pF @ 15V | 2 V | 6.5m Ω @ 16A, 10V | 2V @ 250μA | 16A Ta | 62nC @ 5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| FDH5500 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdmc3300nza-datasheets-2296.pdf | TO-247-3 | TO-247-3 | 55V | 375W Tc | N-Channel | 3.565pF @ 25V | 7mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 268nC @ 20V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB2670 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdp2670-datasheets-2681.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | unknown | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 93W Tc | 19A | 40A | 0.13Ohm | 375 mJ | N-Channel | 1.32pF @ 100V | 130m Ω @ 10A, 10V | 4.5V @ 250μA | 19A Ta | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF6617TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6617trpbf-datasheets-3096.pdf | 30V | 14A | DirectFET™ Isometric ST | 3.95mm | 620μm | 3.95mm | Lead Free | 12 Weeks | No SVHC | 5 | No | 42W | DIRECTFET™ ST | 1.3nF | 11 ns | 34ns | 3.7 ns | 12 ns | 11A | 20V | 30V | 2.35V | 2.1W Ta 42W Tc | 6.2mOhm | 30V | N-Channel | 1300pF @ 15V | 2.35 V | 8.1mOhm @ 15A, 10V | 2.35V @ 250μA | 14A Ta 55A Tc | 17nC @ 4.5V | 8.1 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSZ025N04LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz025n04lsatma1-datasheets-2887.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | EAR99 | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 40A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 69W Tc | 22A | 160A | 0.0032Ohm | 130 mJ | N-Channel | 3680pF @ 20V | 2.5m Ω @ 20A, 10V | 2V @ 250μA | 22A Ta 40A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPZ40N04S53R1ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipz40n04s53r1atma1-datasheets-3200.pdf | 8-PowerVDFN | 3 | 16 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 71W Tc | 40A | 160A | 0.0036Ohm | 140 mJ | N-Channel | 2310pF @ 25V | 3.1m Ω @ 20A, 10V | 3.4V @ 30μA | 40A Tc | 41nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| UPA2701GR-E1-AT | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-upa675tt1a-datasheets-2658.pdf | 8-SOIC (0.173, 4.40mm Width) | 8-PSOP | 30V | N-Channel | 1.2pF @ 10V | 7.5mOhm @ 7A, 10V | 2.5V @ 1mA | 14A Ta | 12nC @ 5V |
