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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT24F50B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt24f50b-datasheets-4688.pdf | 500V | 24A | TO-247-3 | Lead Free | 3 | 22 Weeks | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 335W | 1 | R-PSFM-T3 | 16 ns | 19ns | 14 ns | 41 ns | 24A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 335W Tc | TO-247AD | 82A | 0.24Ohm | 495 mJ | N-Channel | 3630pF @ 25V | 240m Ω @ 11A, 10V | 5V @ 1mA | 24A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRFP450LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp450lcpbf-datasheets-4692.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 400mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.2nF | 14 ns | 49ns | 30 ns | 30 ns | 14A | 30V | 500V | 4V | 190W Tc | 400mOhm | N-Channel | 2200pF @ 25V | 400mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 74nC @ 10V | 400 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SPW32N50C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw32n50c3fksa1-datasheets-4698.pdf | TO-247-3 | 3 | 8 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 560V | 500V | 284W Tc | TO-247AA | 32A | 96A | 0.11Ohm | 1100 mJ | N-Channel | 4200pF @ 25V | 110m Ω @ 20A, 10V | 3.9V @ 1.8mA | 32A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH72N30X3 | IXYS | $11.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh72n30x3-datasheets-4703.pdf | TO-247-3 | 19 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75652G3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75652g3-datasheets-4706.pdf | 100V | 75A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 10 Weeks | 6.39g | No SVHC | 8mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 515W | 1 | FET General Purpose Power | 18.5 ns | 195ns | 190 ns | 80 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 515W Tc | 100V | N-Channel | 7585pF @ 25V | 4 V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 475nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| TSM60NB099CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb099czc0g-datasheets-4715.pdf | TO-220-3 | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 298W Tc | N-Channel | 2587pF @ 100V | 99m Ω @ 11.3A, 10V | 4V @ 250μA | 38A Tc | 62nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R060P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipw60r060p7xksa1-datasheets-4718.pdf | TO-247-3 | 25.4mm | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 164W | 1 | 150°C | R-PSFM-T3 | 23 ns | 79 ns | 48A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 164W Tc | 0.06Ohm | 600V | N-Channel | 2895pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 48A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SUP85N10-10-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sup85n1010ge3-datasheets-2385.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 14 Weeks | 6.000006g | No SVHC | 10.5mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 3 | 1 | Single | 30 | 250W | 1 | FET General Purpose Powers | 12 ns | 90ns | 130 ns | 55 ns | 85A | 20V | SILICON | DRAIN | 3V | 3.75W Ta 250W Tc | TO-220AB | 240A | 280 mJ | 100V | N-Channel | 6550pF @ 25V | 3 V | 10.5m Ω @ 30A, 10V | 3V @ 250μA | 85A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| APT30F50B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt30f50b-datasheets-4648.pdf | 500V | 30A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 38.000013g | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 415W | 1 | R-PSFM-T3 | 20 ns | 23ns | 17 ns | 50 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 415W Tc | TO-247AB | 90A | 500V | N-Channel | 4525pF @ 25V | 190m Ω @ 14A, 10V | 5V @ 1mA | 30A Tc | 115nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHG33N65E-GE3 | Vishay Siliconix | $5.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg33n65ege3-datasheets-4651.pdf | TO-247-3 | 18 Weeks | 3 | TO-247AC | 4.04nF | 32.4A | 650V | 4V | 313W Tc | 90mOhm | N-Channel | 4040pF @ 100V | 105mOhm @ 16.5A, 10V | 4V @ 250μA | 32.4A Tc | 173nC @ 10V | 105 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R110CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r110cfdxksa1-datasheets-4596.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 16 ns | 11ns | 6 ns | 68 ns | 31.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 277.8W Tc | 99.6A | 845 mJ | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STF21N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp21n65m5-datasheets-2003.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF21 | 3 | Single | 30W | 1 | FET General Purpose Power | 17A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 30W Tc | TO-220AB | 68A | 400 mJ | 650V | N-Channel | 1950pF @ 100V | 190m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 50nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| STW18NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf18nm80-datasheets-4627.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STW18N | 3 | Single | 190W | 1 | FET General Purpose Power | 18 ns | 28ns | 50 ns | 96 ns | 17A | 30V | SILICON | SWITCHING | 4V | 190W Tc | 68A | 0.295Ohm | 600 mJ | 800V | N-Channel | 2070pF @ 50V | 295m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP18NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf18nm80-datasheets-4627.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 295MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP18N | 3 | Single | 190W | 1 | FET General Purpose Power | 18 ns | 28ns | 50 ns | 96 ns | 17A | 30V | SILICON | SWITCHING | 4V | 190W Tc | TO-220AB | 68A | 600 mJ | 800V | N-Channel | 2070pF @ 50V | 295m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFH42N50P2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfh42n50p2-datasheets-4676.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 42A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 126A | 0.145Ohm | 1400 mJ | 500V | N-Channel | 5300pF @ 25V | 145m Ω @ 500mA, 10V | 4.5V @ 4mA | 42A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FDH50N50-F133 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdh50n50f133-datasheets-4678.pdf | TO-247-3 | 3 | 6 Weeks | yes | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 625W Tc | TO-247AB | 48A | 192A | 0.105Ohm | 1868 mJ | N-Channel | 6460pF @ 25V | 105m Ω @ 24A, 10V | 5V @ 250μA | 48A Tc | 137nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STW20N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb20n95k5-datasheets-5261.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | No SVHC | 330MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STW20N | 3 | Single | 250W | 1 | FET General Purpose Power | 17 ns | 12ns | 20 ns | 70 ns | 17.5A | 30V | SILICON | SWITCHING | 4V | 250W Tc | TO-247AA | 62A | 950V | N-Channel | 1500pF @ 100V | 4 V | 330m Ω @ 9A, 10V | 5V @ 100μA | 17.5A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IPP65R125C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r125c7xksa1-datasheets-4621.pdf | TO-220-3 | Lead Free | 18 Weeks | 3 | Halogen Free | PG-TO220-3 | 1.67nF | 14 ns | 15ns | 8 ns | 71 ns | 18A | 20V | 650V | 650V | 101W Tc | 110mOhm | N-Channel | 1670pF @ 400V | 125mOhm @ 8.9A, 10V | 4V @ 440μA | 18A Tc | 35nC @ 10V | 125 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STF18NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf18nm80-datasheets-4627.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STF18 | 3 | 40W | 1 | FET General Purpose Power | 18 ns | 28ns | 50 ns | 96 ns | 17A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 40W Tc | TO-220AB | 68A | 0.295Ohm | 600 mJ | 800V | N-Channel | 2070pF @ 50V | 295m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FCH072N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch072n60-datasheets-0523.pdf | TO-247-3 | 3 | 12 Weeks | 6.39g | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 33 ns | 23ns | 3.5 ns | 97 ns | 52A | 30V | SILICON | SWITCHING | 481W Tc | TO-247AB | 0.072Ohm | 600V | N-Channel | 5890pF @ 380V | 72m Ω @ 26A, 10V | 3.5V @ 250μA | 52A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STW22N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw22n95k5-datasheets-4639.pdf | TO-247-3 | Lead Free | 17 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | e3 | TIN | NOT SPECIFIED | STW22N | 1 | Single | NOT SPECIFIED | 20 ns | 15ns | 15 ns | 65 ns | 17.5A | 30V | 250W Tc | 950V | N-Channel | 1550pF @ 100V | 330m Ω @ 9A, 10V | 5V @ 100μA | 17.5A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA60N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa60n25x3-datasheets-4574.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | yes | 250V | 320W Tc | N-Channel | 3610pF @ 25V | 23m Ω @ 30A, 10V | 4.5V @ 1.5mA | 60A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf30n60ege3-datasheets-4576.pdf | TO-220-3 Full Pack | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 125mOhm | 3 | No | 1 | Single | 1 | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 37W Tc | TO-220AB | 65A | 690 mJ | N-Channel | 2600pF @ 100V | 125m Ω @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHG30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg30n60ege3-datasheets-4581.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | 600V | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTH180N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixth180n10t-datasheets-4587.pdf | TO-247-3 | 3 | 8 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-T3 | 54ns | 31 ns | 42 ns | 180A | SILICON | DRAIN | SWITCHING | 480W Tc | TO-247AD | 450A | 0.0064Ohm | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHB33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihb33n60efge3-datasheets-4589.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 14 Weeks | 1.946308g | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 28 ns | 43ns | 48 ns | 161 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 278W Tc | 0.098Ohm | N-Channel | 3454pF @ 100V | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 155nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFP72N20X3 | IXYS | $7.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp72n20x3-datasheets-4593.pdf | TO-220-3 | 19 Weeks | 200V | 320W Tc | N-Channel | 3780pF @ 25V | 20m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R110CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r110cfdxksa1-datasheets-4596.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 16 ns | 11ns | 6 ns | 68 ns | 31.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700V | 277.8W Tc | TO-220AB | 99.6A | 845 mJ | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIHH28N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihh28n60et1ge3-datasheets-4602.pdf | 8-PowerTDFN | 1.05mm | 18 Weeks | 1 | 202W | 150°C | 29 ns | 84 ns | 29A | 30V | 202W Tc | 600V | N-Channel | 2614pF @ 100V | 98m Ω @ 14A, 10V | 5V @ 250μA | 29A Tc | 129nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA20N85XHV | IXYS | $2.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfa20n85xhv-datasheets-4604.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | yes | 20A | 850V | 540W Tc | N-Channel | 1660pF @ 25V | 330m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 20A Tc | 63nC @ 10V | 10V | ±30V |
