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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPW65R110CFDAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r110cfdafksa1-datasheets-4724.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | HIGH RELIABILITY | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 16 ns | 11ns | 6 ns | 68 ns | 31.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 277.8W Tc | 99.6A | 0.11Ohm | 845 mJ | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| E3M0120090D | Cree/Wolfspeed | $2.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/creewolfspeed-e3m0120090d-datasheets-4730.pdf | TO-247-3 | 13 Weeks | TO-247-3 | 900V | 97W Tc | N-Channel | 350pF @ 600V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 23A Tc | 17.3nC @ 15V | 15V | +18V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG40N60E-GE3 | Vishay Siliconix | $26.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg40n60ege3-datasheets-4734.pdf | TO-247-3 | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 329W Tc | TO-247AC | 40A | 123A | 0.075Ohm | 691 mJ | N-Channel | 4436pF @ 100V | 75m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP220N25NFDAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipp220n25nfdaksa1-datasheets-4738.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 14 ns | 10ns | 8 ns | 26 ns | 61A | 20V | 250V | SILICON | DRAIN | 300W Tc | TO-220AB | 244A | 0.022Ohm | N-Channel | 7076pF @ 125V | 22m Ω @ 61A, 10V | 4V @ 270μA | 61A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| R6047ENZ1C9 | ROHM Semiconductor | $2.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-247-3 | 3 | 10 Weeks | No SVHC | 3 | Tin | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 100ns | 47A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 4V | 120W Tc | 141A | 0.072Ohm | N-Channel | 3850pF @ 25V | 72m Ω @ 25.8A, 10V | 4V @ 1mA | 47A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FCH104N60F-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch104n60ff085-datasheets-4754.pdf | TO-247-3 | 6.39g | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 37A | 600V | 357W Tc | N-Channel | 4302pF @ 100V | 104m Ω @ 18.5A, 10V | 5V @ 250μA | 37A Tc | 139nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020FNX | ROHM Semiconductor | $27.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 3 | 10 Weeks | 3 | No | SINGLE | 1 | 50 ns | 70ns | 40 ns | 170 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 50W Tc | TO-220AB | 80A | 0.25Ohm | 26.7 mJ | N-Channel | 2040pF @ 25V | 250m Ω @ 10A, 10V | 5V @ 1mA | 20A Tc | 65nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FDH50N50-F133 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdh50n50f133-datasheets-4678.pdf | TO-247-3 | 3 | 6 Weeks | yes | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 625W Tc | TO-247AB | 48A | 192A | 0.105Ohm | 1868 mJ | N-Channel | 6460pF @ 25V | 105m Ω @ 24A, 10V | 5V @ 250μA | 48A Tc | 137nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STW20N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb20n95k5-datasheets-5261.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | No SVHC | 330MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STW20N | 3 | Single | 250W | 1 | FET General Purpose Power | 17 ns | 12ns | 20 ns | 70 ns | 17.5A | 30V | SILICON | SWITCHING | 4V | 250W Tc | TO-247AA | 62A | 950V | N-Channel | 1500pF @ 100V | 4 V | 330m Ω @ 9A, 10V | 5V @ 100μA | 17.5A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IPP65R125C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r125c7xksa1-datasheets-4621.pdf | TO-220-3 | Lead Free | 18 Weeks | 3 | Halogen Free | PG-TO220-3 | 1.67nF | 14 ns | 15ns | 8 ns | 71 ns | 18A | 20V | 650V | 650V | 101W Tc | 110mOhm | N-Channel | 1670pF @ 400V | 125mOhm @ 8.9A, 10V | 4V @ 440μA | 18A Tc | 35nC @ 10V | 125 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STF18NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf18nm80-datasheets-4627.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STF18 | 3 | 40W | 1 | FET General Purpose Power | 18 ns | 28ns | 50 ns | 96 ns | 17A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 40W Tc | TO-220AB | 68A | 0.295Ohm | 600 mJ | 800V | N-Channel | 2070pF @ 50V | 295m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FCH072N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch072n60-datasheets-0523.pdf | TO-247-3 | 3 | 12 Weeks | 6.39g | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 33 ns | 23ns | 3.5 ns | 97 ns | 52A | 30V | SILICON | SWITCHING | 481W Tc | TO-247AB | 0.072Ohm | 600V | N-Channel | 5890pF @ 380V | 72m Ω @ 26A, 10V | 3.5V @ 250μA | 52A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STW22N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw22n95k5-datasheets-4639.pdf | TO-247-3 | Lead Free | 17 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | e3 | TIN | NOT SPECIFIED | STW22N | 1 | Single | NOT SPECIFIED | 20 ns | 15ns | 15 ns | 65 ns | 17.5A | 30V | 250W Tc | 950V | N-Channel | 1550pF @ 100V | 330m Ω @ 9A, 10V | 5V @ 100μA | 17.5A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SUP85N10-10-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sup85n1010ge3-datasheets-2385.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 14 Weeks | 6.000006g | No SVHC | 10.5mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 3 | 1 | Single | 30 | 250W | 1 | FET General Purpose Powers | 12 ns | 90ns | 130 ns | 55 ns | 85A | 20V | SILICON | DRAIN | 3V | 3.75W Ta 250W Tc | TO-220AB | 240A | 280 mJ | 100V | N-Channel | 6550pF @ 25V | 3 V | 10.5m Ω @ 30A, 10V | 3V @ 250μA | 85A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| APT30F50B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt30f50b-datasheets-4648.pdf | 500V | 30A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 38.000013g | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 415W | 1 | R-PSFM-T3 | 20 ns | 23ns | 17 ns | 50 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 415W Tc | TO-247AB | 90A | 500V | N-Channel | 4525pF @ 25V | 190m Ω @ 14A, 10V | 5V @ 1mA | 30A Tc | 115nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SIHG33N65E-GE3 | Vishay Siliconix | $5.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg33n65ege3-datasheets-4651.pdf | TO-247-3 | 18 Weeks | 3 | TO-247AC | 4.04nF | 32.4A | 650V | 4V | 313W Tc | 90mOhm | N-Channel | 4040pF @ 100V | 105mOhm @ 16.5A, 10V | 4V @ 250μA | 32.4A Tc | 173nC @ 10V | 105 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R110CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r110cfdxksa1-datasheets-4596.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 16 ns | 11ns | 6 ns | 68 ns | 31.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 277.8W Tc | 99.6A | 845 mJ | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STF21N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp21n65m5-datasheets-2003.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF21 | 3 | Single | 30W | 1 | FET General Purpose Power | 17A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 30W Tc | TO-220AB | 68A | 400 mJ | 650V | N-Channel | 1950pF @ 100V | 190m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 50nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| STW18NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf18nm80-datasheets-4627.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STW18N | 3 | Single | 190W | 1 | FET General Purpose Power | 18 ns | 28ns | 50 ns | 96 ns | 17A | 30V | SILICON | SWITCHING | 4V | 190W Tc | 68A | 0.295Ohm | 600 mJ | 800V | N-Channel | 2070pF @ 50V | 295m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STP18NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf18nm80-datasheets-4627.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 295MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP18N | 3 | Single | 190W | 1 | FET General Purpose Power | 18 ns | 28ns | 50 ns | 96 ns | 17A | 30V | SILICON | SWITCHING | 4V | 190W Tc | TO-220AB | 68A | 600 mJ | 800V | N-Channel | 2070pF @ 50V | 295m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFH42N50P2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfh42n50p2-datasheets-4676.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 42A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 126A | 0.145Ohm | 1400 mJ | 500V | N-Channel | 5300pF @ 25V | 145m Ω @ 500mA, 10V | 4.5V @ 4mA | 42A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFA20N85XHV | IXYS | $2.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfa20n85xhv-datasheets-4604.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | yes | 20A | 850V | 540W Tc | N-Channel | 1660pF @ 25V | 330m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 20A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R095C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw65r095c7xksa1-datasheets-4606.pdf | TO-247-3 | Lead Free | 18 Weeks | 3 | Halogen Free | PG-TO247 | 2.14nF | 17 ns | 14ns | 7 ns | 72 ns | 24A | 20V | 650V | 650V | 128W Tc | 84mOhm | N-Channel | 2140pF @ 400V | 95mOhm @ 11.8A, 10V | 4V @ 590μA | 24A Tc | 45nC @ 10V | 95 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STP13N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13n95k3-datasheets-9582.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 850mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | STP13N | 3 | Single | 190W | 1 | FET General Purpose Power | 18 ns | 16ns | 21 ns | 50 ns | 10A | 30V | SILICON | SWITCHING | 4V | 190W Tc | TO-220AB | 40A | 400 mJ | 950V | N-Channel | 1620pF @ 100V | 850m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT11N80BC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 800V | 11A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 156W | 1 | Not Qualified | R-PSFM-T3 | 25 ns | 15ns | 7 ns | 70 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 156W Tc | TO-247AD | 33A | 0.45Ohm | 470 mJ | N-Channel | 1585pF @ 25V | 450m Ω @ 7.1A, 10V | 3.9V @ 680μA | 11A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| STP21N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp21n90k5-datasheets-4557.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | 299MOhm | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | SINGLE | STP21N | 3 | 250W | 1 | FET General Purpose Power | R-PSFM-T3 | 17 ns | 27ns | 40 ns | 52 ns | 18.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250W Tc | TO-220AB | 68A | 900V | N-Channel | 1645pF @ 100V | 299m Ω @ 9A, 10V | 5V @ 100μA | 18.5A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHP33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp33n60ege3-datasheets-4563.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 3 | yes | No | 1 | Single | 278W | 1 | FET General Purpose Powers | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | SILICON | SWITCHING | 2V | 278W Tc | TO-220AB | 88A | 0.099Ohm | 600V | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TK31N60W5,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | EAR99 | No | 1 | Single | 120 ns | 80ns | 8.5 ns | 165 ns | 30.8A | 30V | 230W Tc | 600V | N-Channel | 3000pF @ 300V | 99m Ω @ 15.4A, 10V | 4.5V @ 1.5mA | 30.8A Ta | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA60N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa60n25x3-datasheets-4574.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | yes | 250V | 320W Tc | N-Channel | 3610pF @ 25V | 23m Ω @ 30A, 10V | 4.5V @ 1.5mA | 60A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf30n60ege3-datasheets-4576.pdf | TO-220-3 Full Pack | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 125mOhm | 3 | No | 1 | Single | 1 | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 37W Tc | TO-220AB | 65A | 690 mJ | N-Channel | 2600pF @ 100V | 125m Ω @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 10V | ±30V |
