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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPW60R105CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r105cfd7xksa1-datasheets-9626.pdf | TO-247-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 106W Tc | N-Channel | 1752pF @ 400V | 105m Ω @ 9.3A, 10V | 4.5V @ 470μA | 21A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA24N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqa24n60-datasheets-9629.pdf | 600V | 23.5A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 9 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 90 ns | 270ns | 170 ns | 200 ns | 23.5A | 30V | SILICON | SWITCHING | 5V | 310W Tc | 94A | 0.24Ohm | 600V | N-Channel | 5500pF @ 25V | 240m Ω @ 11.8A, 10V | 5V @ 250μA | 23.5A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SQD50N06-09L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n0609lge3-datasheets-9517.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 136W | 1 | TO-252, (D-Pak) | 3.065nF | 10 ns | 11ns | 8 ns | 27 ns | 50A | 20V | 60V | 2V | 136W Tc | 9mOhm | 60V | N-Channel | 3065pF @ 25V | 9mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 72nC @ 10V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK28N65W5,S1F | Toshiba Semiconductor and Storage | $5.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF17NF25 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std17nf25-datasheets-9649.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 165mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STF17 | 3 | Single | 25W | 1 | FET General Purpose Power | 8.8 ns | 17.2ns | 8.8 ns | 21 ns | 8.5A | 20V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 68A | 250V | N-Channel | 1000pF @ 25V | 3 V | 165m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 29.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDP150N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp150n10-datasheets-9545.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 15MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 110W | 1 | FET General Purpose Power | 47 ns | 164ns | 83 ns | 86 ns | 57A | 20V | SILICON | SWITCHING | 2.5V | 110W Tc | TO-220AB | 228A | 100V | N-Channel | 4760pF @ 25V | 15m Ω @ 49A, 10V | 4.5V @ 250μA | 57A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| R6025JNXC7G | ROHM Semiconductor | $5.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6025jnxc7g-datasheets-9556.pdf | TO-220-3 Full Pack | 18 Weeks | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 85W Tc | N-Channel | 1900pF @ 100V | 182m Ω @ 12.5A, 15V | 7V @ 4.5mA | 25A Tc | 57nC @ 15V | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDA33N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fda33n25-datasheets-9558.pdf | TO-3P-3, SC-65-3 | 16.2mm | 20.1mm | 5mm | 3 | 6 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 245W | 1 | FET General Purpose Power | Not Qualified | 33 ns | 142ns | 68 ns | 77 ns | 33A | 30V | SILICON | SWITCHING | 245W Tc | 0.094Ohm | 250V | N-Channel | 2200pF @ 25V | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 46.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPB020N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb020n08n5atma1-datasheets-9412.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3.949996g | 3 | yes | EAR99 | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 28 ns | 16ns | 20 ns | 62 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 300W Tc | 480A | 0.002Ohm | 674 mJ | N-Channel | 12100pF @ 40V | 2m Ω @ 100A, 10V | 3.8V @ 208μA | 120A Tc | 166nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDMS86350 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms86350-datasheets-9376.pdf | 8-PowerTDFN | 5.1mm | 1.1mm | 6.25mm | 5 | 13 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | 1 | Single | 2.7W | 1 | FET General Purpose Power | 150°C | R-PDSO-N5 | 50 ns | 34ns | 11 ns | 40 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 2.7W Ta 156W Tc | MO-240AA | 300A | 0.0024Ohm | 80V | N-Channel | 10680pF @ 40V | 2.4m Ω @ 25A, 10V | 4.5V @ 250μA | 25A Ta 130A Tc | 155nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB108N15N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp111n15n3gxksa1-datasheets-4542.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 214W | 1 | Not Qualified | R-PSSO-G2 | 17 ns | 35ns | 9 ns | 32 ns | 83A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 214W Tc | N-Channel | 3230pF @ 75V | 10.8m Ω @ 83A, 10V | 4V @ 160μA | 83A Tc | 55nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA65R380E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa65r380e6xksa1-datasheets-9480.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 31W Tc | TO-220AB | 29A | 0.38Ohm | 215 mJ | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2204PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf2204pbf-datasheets-9491.pdf | 40V | 210A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.6Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | Single | 330W | 1 | FET General Purpose Power | 15 ns | 140ns | 110 ns | 62 ns | 210A | 20V | 40V | SILICON | DRAIN | SWITCHING | 4V | 330W Tc | TO-220AB | 75A | 850A | 460 mJ | 40V | N-Channel | 5890pF @ 25V | 4 V | 3.6m Ω @ 130A, 10V | 4V @ 250μA | 210A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK7E3R5-60E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7e3r560e127-datasheets-9501.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 3 | 293W | 1 | 28 ns | 45ns | 49 ns | 68 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 293W Tc | 785A | 404 mJ | N-Channel | 8920pF @ 25V | 3.5m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FCB20N60TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fcb20n60tm-datasheets-9505.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | FCB20N60 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 208W Tc | 20A | 60A | 0.19Ohm | 690 mJ | N-Channel | 3080pF @ 25V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TK4R3E06PL,S1X | Toshiba Semiconductor and Storage | $1.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Through Hole | 175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 | 12 Weeks | 60V | 87W Tc | N-Channel | 3280pF @ 30V | 7.2m Ω @ 15A, 4.5V | 2.5V @ 500μA | 80A Tc | 48.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP16N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihp16n50ce3-datasheets-9522.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | No | 260 | 3 | 1 | Single | 40 | 250W | 1 | FET General Purpose Power | 27 ns | 156ns | 31 ns | 29 ns | 16A | 30V | SILICON | SWITCHING | 3V | 250W Tc | TO-220AB | 40A | 500V | N-Channel | 1900pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbf30pbf-datasheets-9527.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3.7Ohm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 4V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 4 V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDB060AN08A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp060an08a0-datasheets-5677.pdf | 75V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.31247g | 6MOhm | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 255W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 79ns | 38 ns | 37 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 255W Tc | 350 mJ | 75V | N-Channel | 5150pF @ 25V | 6m Ω @ 80A, 10V | 4V @ 250μA | 16A Ta 80A Tc | 95nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRL2910STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl2910strlpbf-datasheets-9108.pdf | 100V | 55A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 26mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | R-PSSO-G2 | 11 ns | 100ns | 55 ns | 49 ns | 55A | 16V | 100V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 200W Tc | 350 ns | 520 mJ | 100V | N-Channel | 3700pF @ 25V | 2 V | 26m Ω @ 29A, 10V | 2V @ 250μA | 55A Tc | 140nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||
| STB12NK80ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp12nk80z-datasheets-6007.pdf | 800V | 10.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 750mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB12N | 3 | Single | 30 | 190W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 18ns | 20 ns | 70 ns | 10.5A | 30V | 800V | SILICON | SWITCHING | 3.75V | 190W Tc | 42A | 400 mJ | 800V | N-Channel | 2620pF @ 25V | 3.75 V | 750m Ω @ 5.25A, 10V | 4.5V @ 100μA | 10.5A Tc | 87nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FQP65N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqp65n06-datasheets-9386.pdf | 60V | 65A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 16mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 150W | 1 | FET General Purpose Power | 20 ns | 160ns | 105 ns | 90 ns | 65A | 25V | 60V | SILICON | SWITCHING | 150W Tc | TO-220AB | 260A | 650 mJ | 60V | N-Channel | 2410pF @ 25V | 4 V | 16m Ω @ 32.5A, 10V | 4V @ 250μA | 65A Tc | 65nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| IPP17N25S3100AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipp17n25s3100aksa1-datasheets-9396.pdf | TO-220-3 | Contains Lead | 14 Weeks | 3 | Halogen Free | Single | PG-TO220-3-1 | 1.5nF | 4.4 ns | 3.7ns | 1.2 ns | 7.5 ns | 17A | 20V | 250V | 250V | 107W Tc | 100mOhm | N-Channel | 1500pF @ 25V | 100mOhm @ 17A, 10V | 4V @ 54μA | 17A Tc | 19nC @ 10V | 100 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD19503KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | NOT SPECIFIED | CSD19503 | 1 | Single | NOT SPECIFIED | 188W | 1 | FET General Purpose Power | 7 ns | 3ns | 2 ns | 11 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 80V | 80V | 2.8V | 188W Tc | 94A | 247A | N-Channel | 2730pF @ 40V | 9.2m Ω @ 60A, 10V | 3.4V @ 250μA | 100A Ta | 36nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| HUF75645S3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75645s3st-datasheets-9149.pdf | 100V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 11.33mm | 4.83mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 14mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 117ns | 97 ns | 41 ns | 75mA | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | 100V | N-Channel | 3790pF @ 25V | 4 V | 14m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 238nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFU6215PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr6215trpbf-datasheets-6749.pdf | -150V | -13A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 580MOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 110W | 1 | Other Transistors | 14 ns | 36ns | 37 ns | 53 ns | -13A | 20V | -150V | SILICON | DRAIN | SWITCHING | 150V | -4V | 110W Tc | 44A | -150V | P-Channel | 860pF @ 25V | -4 V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPA65R650CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipa65r650cexksa1-datasheets-9266.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | 6.000006g | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | NOT SPECIFIED | 7A | 650V | 28W Tc | N-Channel | 440pF @ 100V | 650m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R650CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa80r650cexksa2-datasheets-9271.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | Halogen Free | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 8A | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 33W Tc | TO-220AB | 8A | 24A | 0.65Ohm | 340 mJ | N-Channel | 1100pF @ 100V | 650m Ω @ 5.1A, 10V | 3.9V @ 470μA | 8A Ta | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA06N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa06n80c3xksa1-datasheets-9275.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 39W Tc | TO-220AB | 6A | 18A | 0.9Ohm | 230 mJ | N-Channel | 785pF @ 100V | 900m Ω @ 3.8A, 10V | 3.9V @ 250μA | 6A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPI086N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi086n10n3gxksa1-datasheets-9282.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 18 Weeks | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 125W | 1 | R-PSIP-T3 | 18 ns | 42ns | 8 ns | 31 ns | 80A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 125W Tc | 320A | 0.0086Ohm | N-Channel | 3980pF @ 50V | 8.6m Ω @ 73A, 10V | 3.5V @ 75μA | 80A Tc | 55nC @ 10V | 6V 10V | ±20V |
