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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHW33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihw33n60ege3-datasheets-9749.pdf | TO-3P-3 Full Pack | 3 | 19 Weeks | 38.000013g | Unknown | 3 | yes | No | 1 | Single | 1 | FET General Purpose Powers | 56 ns | 90ns | 80 ns | 150 ns | 33A | 4V | SILICON | SWITCHING | 2V | 278W Tc | TO-247AD | 88A | 0.099Ohm | 600V | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SIHB35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60efge3-datasheets-9754.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 21 Weeks | D2PAK (TO-263) | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihg33n60ege3-datasheets-9756.pdf | TO-247-3 | Lead Free | 14 Weeks | 38.000013g | Unknown | 3 | Tin | No | 1 | Single | 278W | 1 | TO-247AC | 3.508nF | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | 600V | 2V | 278W Tc | 99mOhm | 600V | N-Channel | 3508pF @ 100V | 99mOhm @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 99 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| C3M0120090J-TR | Cree/Wolfspeed | $10.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SiCFET (Silicon Carbide) | RoHS Compliant | 2015 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 26 Weeks | 900V | 83W Tc | N-Channel | 350pF @ 600V | 155m Ω @ 15A, 15V | 3.5V @ 3mA | 22A Tc | 17.3nC @ 15V | 15V | +18V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF250P225 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/infineontechnologies-irf250p225-datasheets-9769.pdf | TO-247-3 | 26 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 250V | 313W Tc | N-Channel | 4897pF @ 50V | 22m Ω @ 41A, 10V | 4V @ 270μA | 69A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD14N60E-GE3 | Vishay Siliconix | $1.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd14n60ege3-datasheets-9777.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 147W Tc | N-Channel | 1205pF @ 100V | 309mOhm @ 7A, 10V | 4V @ 250μA | 13A Tc | 64nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP28NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | 329.988449mg | 3 | EAR99 | No | STP28N | 1 | Single | 1 | 23.5 ns | 21.5ns | 27 ns | 92 ns | 23A | 25V | SILICON | DRAIN | SWITCHING | 600V | 190W Tc | TO-220AB | 92A | 50 mJ | 650V | N-Channel | 2090pF @ 100V | 150m Ω @ 11.5A, 10V | 5V @ 250μA | 23A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| SIHF28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihf28n60efge3-datasheets-9707.pdf | TO-220-3 Full Pack | 3 | 21 Weeks | 6.000006g | 123mOhm | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 75A | 600V | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| FQA90N15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqa90n15-datasheets-9637.pdf | 150V | 90A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 10 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 10 hours ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | Not Qualified | 105 ns | 760ns | 410 ns | 470 ns | 90A | 25V | SILICON | SWITCHING | 4V | 375W Tc | 150V | N-Channel | 8700pF @ 25V | 18m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 285nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||
| HUF75345S3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-huf75345s3st-datasheets-9095.pdf | 55V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | 7mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 325W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14 ns | 118ns | 26 ns | 42 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 325W Tc | 55V | N-Channel | 4000pF @ 25V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 275nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||
| IRF740SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irf740spbf-datasheets-9653.pdf | 400V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | Unknown | 550mOhm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 4V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF300P227 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/infineontechnologies-irf300p227-datasheets-9658.pdf | TO-247-3 | 26 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 300V | 313W Tc | N-Channel | 4893pF @ 50V | 40m Ω @ 30A, 10V | 4V @ 270μA | 50A Tc | 107nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW15NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw15nm60nd-datasheets-9663.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 299mOhm | 3 | EAR99 | No | e3 | Tin (Sn) | STW15N | 3 | Single | 125W | 1 | FET General Purpose Power | 17 ns | 20ns | 28 ns | 47 ns | 14A | 25V | SILICON | SWITCHING | 4V | 125W Tc | TO-247AC | 56A | 600V | N-Channel | 1250pF @ 50V | 299m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 40nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| STW18NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp18nm60nd-datasheets-7263.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 3 | EAR99 | No | STW18N | Single | 1 | 55 ns | 15.5ns | 18 ns | 13 ns | 13A | 25V | SILICON | DRAIN | SWITCHING | 600V | 110W Tc | 52A | 0.29Ohm | 187 mJ | 650V | N-Channel | 1030pF @ 50V | 290m Ω @ 6.5A, 10V | 5V @ 250μA | 13A Tc | 34nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| SIHB28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihb28n60efge3-datasheets-9668.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 21 Weeks | 1.946308g | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | SWITCHING | 600V | 600V | 250W Tc | 75A | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STF6N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6n62k3-datasheets-2052.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STF6N | 3 | Single | 90W | 1 | FET General Purpose Power | 22 ns | 12.5ns | 19 ns | 49 ns | 5.5A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 22A | 620V | N-Channel | 875pF @ 50V | 1.28 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.5A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| SIHF35N60EF-GE3 | Vishay Siliconix | $5.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf35n60efge3-datasheets-9677.pdf | TO-220-3 Full Pack | 21 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF21NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf21nm60nd-datasheets-9119.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF21 | 3 | Single | 30W | 1 | FET General Purpose Power | 18 ns | 16ns | 48 ns | 70 ns | 17A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 30W Tc | TO-220AB | 68A | 0.22Ohm | 600V | N-Channel | 1800pF @ 50V | 220m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 60nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| STP185N55F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp185n55f3-datasheets-9682.pdf | TO-220-3 | 3 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | STP185 | 3 | Single | 330W | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 150ns | 50 ns | 110 ns | 120A | 20V | SILICON | SWITCHING | 330W Tc | TO-220AB | 480A | 0.0038Ohm | 1000 mJ | 55V | N-Channel | 6800pF @ 25V | 3.8m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STW21NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw21nm60nd-datasheets-9123.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 42 Weeks | No SVHC | 220mOhm | 3 | EAR99 | No | e3 | Tin (Sn) | STW21N | 3 | Single | 140W | 1 | FET General Purpose Power | 18 ns | 16ns | 48 ns | 70 ns | 17A | 25V | SILICON | SWITCHING | 4V | 140W Tc | 68A | 600V | N-Channel | 1800pF @ 50V | 220m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 60nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| SIHP35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp35n60efge3-datasheets-9693.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA160N08 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqa160n08-datasheets-9696.pdf | 80V | 160A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 10 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | Not Qualified | 85 ns | 970ns | 410 ns | 260 ns | 160A | 25V | SILICON | SWITCHING | 375W Tc | 640A | 0.007Ohm | 80V | N-Channel | 7900pF @ 25V | 7m Ω @ 80A, 10V | 4V @ 250μA | 160A Tc | 290nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||
| STFI13N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13n95k3-datasheets-9582.pdf | TO-262-3 Full Pack, I2Pak | Lead Free | 3 | EAR99 | No | STFI13N | Single | FET General Purpose Powers | 18 ns | 16ns | 21 ns | 50 ns | 10A | 30V | 950V | 40W Tc | N-Channel | 1620pF @ 100V | 850m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N06-09L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n0609lge3-datasheets-9517.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 136W | 1 | TO-252, (D-Pak) | 3.065nF | 10 ns | 11ns | 8 ns | 27 ns | 50A | 20V | 60V | 2V | 136W Tc | 9mOhm | 60V | N-Channel | 3065pF @ 25V | 9mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 72nC @ 10V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TK28N65W5,S1F | Toshiba Semiconductor and Storage | $5.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF17NF25 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std17nf25-datasheets-9649.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 165mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STF17 | 3 | Single | 25W | 1 | FET General Purpose Power | 8.8 ns | 17.2ns | 8.8 ns | 21 ns | 8.5A | 20V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 68A | 250V | N-Channel | 1000pF @ 25V | 3 V | 165m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 29.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| FDP150N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp150n10-datasheets-9545.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 15MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 110W | 1 | FET General Purpose Power | 47 ns | 164ns | 83 ns | 86 ns | 57A | 20V | SILICON | SWITCHING | 2.5V | 110W Tc | TO-220AB | 228A | 100V | N-Channel | 4760pF @ 25V | 15m Ω @ 49A, 10V | 4.5V @ 250μA | 57A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| R6025JNXC7G | ROHM Semiconductor | $5.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6025jnxc7g-datasheets-9556.pdf | TO-220-3 Full Pack | 18 Weeks | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 85W Tc | N-Channel | 1900pF @ 100V | 182m Ω @ 12.5A, 15V | 7V @ 4.5mA | 25A Tc | 57nC @ 15V | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDA33N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fda33n25-datasheets-9558.pdf | TO-3P-3, SC-65-3 | 16.2mm | 20.1mm | 5mm | 3 | 6 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 245W | 1 | FET General Purpose Power | Not Qualified | 33 ns | 142ns | 68 ns | 77 ns | 33A | 30V | SILICON | SWITCHING | 245W Tc | 0.094Ohm | 250V | N-Channel | 2200pF @ 25V | 94m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 46.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| NTP110N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | /files/onsemiconductor-ntp110n65s3hf-datasheets-9571.pdf | TO-220-3 | 12 Weeks | yes | compliant | e3 | Tin (Sn) | 650V | 240W Tc | N-Channel | 2635pF @ 400V | 110m Ω @ 15A, 10V | 5V @ 740μA | 30A Tc | 62nC @ 10V | 10V | ±30V |
