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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Case Connection | Application | Speed | Diode Element Material | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NS8MTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 1.1V | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 1kV | 125A | Standard | 1kV | 8A | 1 | 8A | 1000V | 10μA @ 1000V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||
| BY255GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-by251gpe373-datasheets-2914.pdf | DO-201AD, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | BY255 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.1V | 100A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1.3kV | 100A | 1.3kV | 3 μs | 3 μs | Standard | 1.3kV | 3A | 1 | 3A | 40pF @ 4V 1MHz | 1300V | 5μA @ 1300V | 1.1V @ 3A | -65°C~175°C | |||||||||||||||||
| NS8KTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 800V | 125A | Standard | 800V | 8A | 1 | 8A | 10μA @ 800V | 1.1V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||
| BYV26DGPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-byv26egpe354-datasheets-0868.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | BYV26DGP | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1A | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 800V | 30A | 800V | 75 ns | 75 ns | Standard | 800V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 800V | 2.5V @ 1A | -65°C~175°C | ||||||||||||||||||||
| BA159GPEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ba159gpe373-datasheets-2400.pdf | DO-204AL, DO-41, Axial | BA159GP | DO-204AL (DO-41) | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | Standard | 1kV | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.3V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| BA158GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ba159gpe373-datasheets-2400.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | BA158GP | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 20A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 20A | 600V | 250 ns | 250 ns | Standard | 600V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 600V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||
| UF8DT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-220-2 Full Pack, Isolated Tab | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 200V | 100A | 200V | 20 ns | 20 ns | Standard | 200V | 8A | 1 | 8A | 10μA @ 200V | 1.02V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||
| MBRF7H50-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb7h35e345-datasheets-2608.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | R-PSFM-T2 | 7.5A | 150A | 50μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | 50V | 150A | TO-220AC | Schottky | 50V | 7.5A | 1 | 50μA @ 50V | 730mV @ 7.5A | -65°C~150°C | |||||||||||||||||||||||||||
| 1N4004GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4004 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 400V | 2 μs | 2 μs | Standard | 400V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 400V | 1.1V @ 1A | -65°C~175°C | |||||||||||||||||||||
| 1N4948GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4947gpe354-datasheets-9953.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4948 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.3V | 25A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 1kV | 25A | 1kV | 500 ns | 500 ns | Standard | 1kV | 1A | 1A | 15pF @ 4V 1MHz | 1000V | 1μA @ 1000V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||
| BY133GP-E3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | ROHS3 Compliant | DO-204AC, DO-15, Axial | BY133 | DO-204AC (DO-15) | Standard Recovery >500ns, > 200mA (Io) | 2 μs | Standard | 1.3kV | 1A | 1300V | 5μA @ 1300V | 1.2V @ 2A | 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4937GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4934gpe354-datasheets-9941.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4937 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 600V | 30A | 600V | 200 ns | 200 ns | Standard | 600V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 600V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||
| 1N5060GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5059gpe354-datasheets-1939.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N5060 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 2 μs | 2 μs | Standard | 400V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||
| 1N4946GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4947gpe354-datasheets-9953.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4946 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 25A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 600V | 25A | 600V | 250 ns | 250 ns | Standard | 600V | 1A | 1A | 15pF @ 4V 1MHz | 1μA @ 600V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||
| 1N4384GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4385gpe354-datasheets-2697.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4384 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 400V | 50A | 400V | 2 μs | 2 μs | Standard | 400V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1V @ 1A | -65°C~175°C | |||||||||||||||||||||
| 1N4007GPEHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | Tin | 1N4007 | Single | DO-204AL (DO-41) | 30A | Standard Recovery >500ns, > 200mA (Io) | 5μA | 1kV | 30A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1A | 8pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1.1V @ 1A | 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| UF8BT-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | TO-220-2 Full Pack, Isolated Tab | 2 | 19 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 100A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 100V | 100A | 100V | 20 ns | 20 ns | Standard | 100V | 8A | 1 | 8A | 10μA @ 100V | 1.02V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||
| NSF8GTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-ns8gte345-datasheets-6732.pdf | TO-220-2 Full Pack, Isolated Tab | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 10μA | 400V | 125A | Standard | 400V | 8A | 1 | 8A | 10μA @ 400V | 1.1V @ 8A | -55°C~150°C | ||||||||||||||||||||||||||||||
| 1N4005GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4007gpe354-datasheets-2720.pdf | DO-204AL, DO-41, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 1N4005 | 2 | Single | 1 | Rectifier Diodes | O-PALF-W2 | 30A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 600V | 30A | 600V | 2 μs | 2 μs | Standard | 600V | 1A | 1A | 8pF @ 4V 1MHz | 5μA @ 600V | 1.1V @ 1A | -65°C~175°C | ||||||||||||||||||||||||
| MBR1660HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb1660e345-datasheets-0067.pdf | TO-220-3 | 20 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | MBR1660 | 3 | Single | 16A | 150A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA | 60V | 150A | Schottky | 60V | 16A | 1mA @ 60V | 750mV @ 16A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| UG15JTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 15A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 30μA | 600V | 135A | 50 ns | Standard | 600V | 15A | 1 | 30μA @ 600V | 1.75V @ 15A | 150°C Max | |||||||||||||||||||||||||||||
| 1N4936GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4934gpe354-datasheets-9941.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4936 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 30A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 400V | 30A | 400V | 200 ns | 200 ns | Standard | 400V | 1A | 1A | 15pF @ 4V 1MHz | 5μA @ 400V | 1.2V @ 1A | -65°C~175°C | |||||||||||||||||||||
| 1N4947GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4947gpe354-datasheets-9953.pdf | DO-204AL, DO-41, Axial | 2 | yes | Tin | unknown | 1N4947 | 2 | Single | 25A | Fast Recovery =< 500ns, > 200mA (Io) | 1μA | 800V | 25A | 800V | 250 ns | 250 ns | Standard | 800V | 1A | 15pF @ 4V 1MHz | 1μA @ 800V | 1.3V @ 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| 1N4586GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4385gpe354-datasheets-2697.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4586 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 50A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 1kV | 50A | 1kV | 2 μs | 2 μs | Standard | 1kV | 1A | 1A | 15pF @ 4V 1MHz | 1000V | 5μA @ 1000V | 1V @ 1A | -65°C~175°C | ||||||||||||||||||||
| 1N5393GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n5399gpe373-datasheets-2623.pdf | DO-204AC, DO-15, Axial | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N5393 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-PALF-W2 | 1.5A | 50A | ISOLATED | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 5μA | 200V | 50A | 200V | 2 μs | 2 μs | Standard | 200V | 1.5A | 1 | 15pF @ 4V 1MHz | 5μA @ 200V | 1.4V @ 1.5A | -65°C~175°C | |||||||||||||||||||
| SBLB1040HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl1030e345-datasheets-4591.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | SBLB1040 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 10A | 250A | 500μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 40V | 250A | Schottky | 40V | 10A | 1 | 1mA @ 40V | 600mV @ 10A | -40°C~125°C | |||||||||||||||||||||||||
| MBR16H50HE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-mbrb16h45he3ai-datasheets-4242.pdf | TO-220-2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 16A | 150A | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA | 50V | 150A | Schottky | 50V | 16A | 100μA @ 50V | 730mV @ 16A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| 1N4248GPHE3/73 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SUPERECTIFIER® | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | 160°C | -65°C | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-1n4246gpe354-datasheets-8798.pdf | DO-204AL, DO-41, Axial | 2 | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | Tin | unknown | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | 1N4248 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 25A | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 25A | 800V | Standard | 800V | 1A | 1A | 8pF @ 4V 1MHz | 1μA @ 800V | 1.2V @ 1A | -65°C~160°C | |||||||||||||||||||||||
| FES8CTHE3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-fes8dte345-datasheets-0214.pdf | TO-220-2 | 2 | 20 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Single | 1 | Rectifier Diodes | 8A | 125A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 150V | 125A | 150V | 35 ns | 35 ns | Standard | 150V | 8A | 1 | 8A | 10μA @ 150V | 950mV @ 8A | -55°C~150°C | ||||||||||||||||||||||||
| SBLB8L40-E3/45 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-sbl8l40e345-datasheets-4660.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.45mm | 4.83mm | 9.14mm | Lead Free | 2 | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | SBLB8L40 | 3 | Common Cathode | 1 | Rectifier Diodes | R-PSSO-G2 | 8A | 250A | 1mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1mA | 40V | 250A | Schottky | 40V | 8A | 1 | 8A | 1mA @ 40V | 500mV @ 8A | -65°C~125°C |
