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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Number of Terminations | Factory Lead Time | REACH SVHC | Max Supply Voltage | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5298UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 175°C | -65°C | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | END | WRAP AROUND | Single | 1 | ISOLATED | SILICON | 0.5W | CURRENT REGULATOR DIODE | 1.1mA | 1.4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5308UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 2.7mA | 2.15V | 320000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR20M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 200V | 70A | 200V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6077 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | Axial | 2 | 12 Weeks | EAR99 | unknown | 8541.10.00.80 | NO | WIRE | 2 | 150°C | 1 | Rectifier Diodes | Not Qualified | O-XALF-W2 | SINGLE | ISOLATED | SUPER FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 30ns | Standard | 70A | 1 | 1.3A | 60pF @ 5V 1MHz | 100V | 5μA @ 100V | 1.2V @ 3A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6074 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | Lead, Tin | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503B | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | O-XALF-W2 | 3A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 30 ns | Standard | 100V | 850mA | 1 | 3A | 1μA @ 100V | 2.04V @ 9.4A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||
| MBR3545 | GeneSiC Semiconductor | $103.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbr3545-datasheets-2274.pdf | DO-203AA, DO-4, Stud | 1 | 10 Weeks | No SVHC | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 35A | 750mV | CATHODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 1μA | 45V | Schottky | 45V | 35A | 1 | 1.5mA @ 20V | 680mV @ 35A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6078 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 150°C | -65°C | Non-RoHS Compliant | Axial | 2 | 12 Weeks | 2 | EAR99 | unknown | 8541.10.00.80 | WIRE | 2 | Single | 1 | Rectifier Diodes | Not Qualified | 1.2V | ISOLATED | SUPER FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 70A | 30ns | Standard | 1 | 1.3A | 60pF @ 5V 1MHz | 150V | 5μA @ 150V | 1.2V @ 3A | 6A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N5291UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 0.56mA | 1.1V | 1900000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N5834R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1N5834R | 1 | O-MUPM-D1 | 40A | 750mV | SINGLE | ANODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 800A | 1μA | 40V | Schottky, Reverse Polarity | 40V | 40A | 1 | 20mA @ 10V | 590mV @ 40A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6075 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503B | WIRE | 2 | Single | 1 | Qualified | 3A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 30 ns | Standard | 150V | 850mA | 1 | 3A | 1μA @ 150V | 2.04V @ 9.4A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||||
| JANTX1N6626U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | AVALANCHE | Non-RoHS Compliant | 1997 | SQ-MELF, A | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | Lead, Tin | 8541.10.00.80 | MIL | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200V | 30ns | Standard | 75A | 1 | 2A | 200V | 2μA @ 200V | 1.35V @ 2A | 1.75A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| 1N5314UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | DO-213AB | CURRENT REGULATOR DIODE | 4.7mA | 2.9V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5287UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 8 Weeks | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 0.33mA | 1V | 6600000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5550US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/420G | END | WRAP AROUND | 235 | 2 | Single | 20 | 1 | Qualified | O-LELF-R2 | 5A | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 200V | 100A | 2 μs | Standard | 200V | 5A | 1 | 3A | 1μA @ 200V | 1.2V @ 9A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||
| 1N5293UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 0.68mA | 1.15V | 1350000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5190 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/297 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan1n5186-datasheets-4010.pdf | B, Axial | 2 | 14 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | MIL-19500/424A | WIRE | 2 | Single | 1 | Qualified | O-XALF-W2 | 3A | ISOLATED | FAST RECOVERY POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2μA | 600V | 80A | 400 ns | Standard | 1 | 3A | 2μA @ 600V | 1.5V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N5301UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 1.4mA | 1.55V | 540000Ohm | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N5309UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | ISOLATED | SILICON | 0.5W | DO-213AB | CURRENT REGULATOR DIODE | 3mA | 2.25V | 300000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6621 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.2A | 1.6V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 440V | 20A | 0.5μA | DO-41 | 30 ns | Standard | 440V | 1.2A | 1 | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| 1N5294UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | ISOLATED | SILICON | 0.5W | DO-213AB | CURRENT REGULATOR DIODE | 0.75mA | 1.2V | 1150000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| 1N5283UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | ISOLATED | SILICON | 0.5W | CURRENT REGULATOR DIODE | 0.22mA | 1V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6630US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | /files/microsemicorporation-1n6630us-datasheets-1429.pdf | E-MELF | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.4A | 1.7V | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 75A | 50 ns | Standard | 900V | 1.4A | 1 | 3A | 4μA @ 100V | 1.7V @ 3A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||
| 1N5306UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 2.2mA | 1.95V | 370000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HF80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -65°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 20.02mm | 22.9mm | 17.35mm | 13 Weeks | 2 | Common Cathode | DO-203AB (DO-5) | 70A | Standard Recovery >500ns, > 200mA (Io) | 1.25kA | 9mA | 800V | Standard | 800V | 70A | 800V | 1.35V @ 220A | 70A | -65°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5832R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 1N5832R | 1 | O-MUPM-D1 | 40A | 800A | 1μA | SINGLE | ANODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 20V | Schottky, Reverse Polarity | 20V | 40A | 1 | 20mA @ 10V | 520mV @ 40A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N5304UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | ISOLATED | SILICON | 0.5W | DO-213AB | CURRENT REGULATOR DIODE | 1.8mA | 1.75V | 420000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6623 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 18 Weeks | 2 | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 880V | DO-41 | 50 ns | Standard | 880V | 1A | 1A | 500nA @ 880V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| 1N5284UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | Single | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | ISOLATED | SILICON | 0.5W | DO-213AB | CURRENT REGULATOR DIODE | 0.24mA | 1V | 19000000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6075 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503B | WIRE | 2 | Single | 1 | Qualified | 3A | 2.04V | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 150V | 35A | 30 ns | Standard | 150V | 850mA | 1 | 3A | 1μA @ 150V | 2.04V @ 9.4A | -65°C~155°C | |||||||||||||||||||||||||||||||||||||||
| 1N5285UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 0.27mA | 1V | 14000000Ohm |
