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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JTX1N3614 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5807URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 50V | 5μA @ 50V | 875mV @ 4A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| JAN1N5811URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | 14 Weeks | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 150V | 5μA @ 150V | 875mV @ 4A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| VS-41HFR40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 400V | 40A | 400V | 1.3V @ 125A | 40A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HFR160M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | 160°C | NOT SPECIFIED | 1 | O-MUPM-H1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4500μA | Standard, Reverse Polarity | 1.6kV | 40A | 595A | 1 | 1600V | 1.5V @ 125A | -65°C~160°C | |||||||||||||||||||||||||||||||||||||||
| JANTX1N6640 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 1N6640 | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 2.5A | 0.1μA | DO-35 | 4 ns | Standard | 50V | 300mA | 0.3A | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | ||||||||||||||||||||||||||
| JAN1N5809URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 100V | 5μA @ 100V | 875mV @ 4A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||
| 1N6631US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.4A | 1.95V | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY | 6.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kV | 60A | 60 ns | Standard | 1.1kV | 1.4A | 1 | 40pF @ 10V 1MHz | 1100V | 4μA @ 1100V | 1.4V @ 1.4A | -65°C~150°C | |||||||||||||||||||||||
| JANTX1N5802US | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n5804us-datasheets-2472.pdf | SQ-MELF, A | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 8541.10.00.80 | MIL-19500/477F | END | WRAP AROUND | Single | 1 | Qualified | 975mV | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1μA | 50V | 35A | 25 ns | Standard | 50V | 1A | 1 | 25pF @ 10V 1MHz | 1μA @ 50V | 875mV @ 1A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| VS-70HF10M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 100V | 70A | 100V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HF120M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 1.2kV | 70A | 1200V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR60M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 600V | 70A | 600V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6624 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/585 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6622-datasheets-8344.pdf | A, Axial | 2 | 26 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1A | 1.8V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 990V | 20A | DO-41 | 50 ns | Standard | 990V | 1A | 1A | 10pF @ 10V 1MHz | 500nA @ 990V | 1.55V @ 1A | -65°C~150°C | |||||||||||||||||||||||||
| VS-70HFL40S02M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | FREE WHEELING DIODE | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 200 ns | Standard | 400V | 70A | 730A | 1 | 400V | 1.85V @ 219.8A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||
| JAN1N5553US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554us-datasheets-4685.pdf | SQ-MELF, B | 2 | 8 Weeks | 2 | IN PRODUCTION (Last Updated: 2 weeks ago) | No | 8541.10.00.80 | END | WRAP AROUND | 2 | Single | 1 | Qualified | 5A | 1.3V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 800V | 100A | 2 μs | Standard | 1 | 3A | 1μA @ 800V | 1.3V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| JANTXV1N5622US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/427 | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | Single | D-5A | Standard Recovery >500ns, > 200mA (Io) | 500nA | 100V | 30A | 2 μs | Standard | 1kV | 1A | 1000V | 500nA @ 1000V | 1.3V @ 3A | 1A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||
| JTX1N5419 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFL60S02M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | 2 | FREE WHEELING DIODE | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 200 ns | Standard | 600V | 70A | 730A | 1 | 600V | 1.85V @ 219.8A | -40°C~125°C | ||||||||||||||||||||||||||||||||||||||
| VS-70HFR40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 400V | 70A | 400V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFL10S02M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | FREE WHEELING DIODE | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | FAST RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Standard | 100V | 40A | 420A | 1 | 0.2μs | 100V | 1.3V @ 125A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||
| VS-70HF100M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 1kV | 70A | 1000V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-40HFL40S02M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | FREE WHEELING DIODE | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | FAST RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Standard | 400V | 40A | 420A | 1 | 0.2μs | 400V | 1.3V @ 125A | -40°C~125°C | |||||||||||||||||||||||||||||||||||||
| VS-40HFL60S02M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs85hfl60s05-datasheets-4835.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | FREE WHEELING DIODE | unknown | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | 125°C | NOT SPECIFIED | 1 | O-MUPM-D1 | SINGLE | CATHODE | FAST RECOVERY | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100μA | Standard | 600V | 40A | 420A | 1 | 0.2μs | 600V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||
| 1N5288-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HF20M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard | 200V | 70A | 200V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-70HFR100M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs70hf160-datasheets-8110.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 1kV | 70A | 1000V | 1.35V @ 220A | 70A | -65°C~180°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5807US | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Bulk | Non-RoHS Compliant | SQ-MELF | 16 Weeks | 1N5807 | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | Standard | 60pF @ 5V 1MHz | 50V | 5μA @ 50V | 875mV @ 4A | 6A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6074 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/503 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 155°C | -65°C | Non-RoHS Compliant | 1997 | /files/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 12 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/503B | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 3A | 2.04V | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 35A | 30 ns | Standard | 100V | 850mA | 1 | 3A | 1μA @ 100V | 2.04V @ 9.4A | -65°C~155°C | ||||||||||||||||||||||||||
| JTX1N5554 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | 1N5554 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MUR5040 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mur5040-datasheets-2232.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | 175°C | 1 | O-MUPM-D1 | 600A | SINGLE | CATHODE | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 75 ns | Standard | 400V | 50A | 1 | 400V | 10μA @ 50V | 1V @ 50A | -55°C~150°C |
