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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Max Supply Voltage | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UES1103SM | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | Not Applicable | Non-RoHS Compliant | 1996 | SQ-MELF, A | 2 | 8 Weeks | 2 | no | EAR99 | No | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | Single | 1 | 2.5A | 975mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 150V | 35A | 25 ns | Standard | 150V | 2.5A | 1 | 2μA @ 150V | 975mV @ 2A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| 1N5833 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N5833 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 550mV | 800A | 1μA | CATHODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 30V | Schottky | 30V | 40A | 1 | 20mA @ 10V | 550mV @ 40A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| JTX1N3646 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5834 | GeneSiC Semiconductor | $20.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | 2013 | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | PRODUCTION (Last Updated: 5 months ago) | yes | UPPER | SOLDER LUG | NOT SPECIFIED | 1N5834 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 40A | 590mV | 800A | 1μA | CATHODE | POWER | 1.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 40V | Schottky | 40V | 40A | 1 | 20mA @ 10V | 590mV @ 40A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| SD51 | GeneSiC Semiconductor | $20.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 150°C | -60°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-sd51-datasheets-2258.pdf | DO-203AB, DO-5, Stud | 1 | 10 Weeks | No SVHC | PRODUCTION (Last Updated: 5 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | SD51 | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 60A | 660mV | 800A | 1μA | CATHODE | POWER | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1A | 45V | Schottky | 45V | 60A | 1 | 5mA @ 45V | 660mV @ 60A | -65°C~150°C | ||||||||||||||||||||||||||||||||||||||
| 1N5305-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | Contains Lead | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 3 weeks ago) | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5299-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5297-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5285-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 2 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JTX1N5550 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | 1N5550 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5286-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6076 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6080-datasheets-8464.pdf | A, Axial | 2 | 7 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD | MIL-19500/503 | NO | WIRE | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-LALF-W2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30ns | Standard | 75A | 1 | 6A | 50V | 5μA @ 50V | 1.76V @ 18.8A | 1.3A | -65°C~155°C | ||||||||||||||||||||||||||||||||||||||
| VS-42HFR80M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | 190°C | NOT SPECIFIED | 1 | O-MUPM-H1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 9000μA | Standard, Reverse Polarity | 800V | 40A | 595A | 1 | 800V | 1.3V @ 125A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||
| 1N6542 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | Non-RoHS Compliant | 1997 | 2 | 17 Weeks | 2 | no | EAR99 | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 1A | ISOLATED | SILICON | 1kV | RECTIFIER DIODE | 1A | 0.03μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5552 | Microsemi Corporation | $18.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/420 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 2 | 14 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Single | 1 | Qualified | 5A | 1.2V | ISOLATED | POWER | Standard Recovery >500ns, > 200mA (Io) | SILICON | 1μA | 600V | 100A | 2 μs | Standard | 600V | 5A | 1 | 5A | 1μA @ 600V | 1.2V @ 9A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| 1N5299UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 1.2mA | 1.45V | 640000Ohm | ||||||||||||||||||||||||||||||||||||||||||||
| 1N5291-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | Lead Free | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5289UR-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Bulk | 1 (Unlimited) | FIELD EFFECT | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-cdll5305-datasheets-5540.pdf | 2 | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | 8541.10.00.70 | e0 | TIN LEAD | YES | END | WRAP AROUND | NOT SPECIFIED | 2 | 175°C | -65°C | NOT SPECIFIED | 1 | Current Regulator Diodes | Not Qualified | O-LELF-R2 | SINGLE | ISOLATED | SILICON | 0.5W | 100V | DO-213AB | CURRENT REGULATOR DIODE | 0.43mA | 1.05V | 3300000Ohm | ||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6628 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/590 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantxv1n6628-datasheets-8347.pdf | E, Axial | Contains Lead | 2 | 18 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | METALLURGICALLY BONDED, HIGH RELIABILITY | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/590 | WIRE | 2 | Single | 1 | Qualified | 4A | 1.5V | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2μA | 600V | 75A | 30 ns | Standard | 660V | 1.75A | 1 | 40pF @ 10V 1MHz | 2μA @ 660V | 1.35V @ 2A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| 1N5289-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | Not Applicable | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jans1n52981-datasheets-4015.pdf | 20 Weeks | 100V | IN PRODUCTION (Last Updated: 1 month ago) | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SM20 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | RoHS Compliant | Axial | 2 | 18 Weeks | no | EAR99 | unknown | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | 2 | 175°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | E-XALF-W2 | SINGLE | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 2.5 μs | Standard | 2kV | 600mA | 14A | 0.26A | 8pF @ 5V 1MHz | 2000V | 1μA @ 2000V | 5V @ 250mA | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6663 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jantx1n6663-datasheets-8482.pdf | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | Lead, Tin | 8541.10.00.70 | e0 | TIN LEAD | AXIAL | WIRE | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Not Qualified | 500mA | ISOLATED | SILICON | 600V | DO-35 | RECTIFIER DIODE | 0.5A | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JTX1N3614 | Semtech Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JAN1N5807URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 50V | 5μA @ 50V | 875mV @ 4A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| JAN1N5811URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | 14 Weeks | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 150V | 5μA @ 150V | 875mV @ 4A | 3A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| VS-41HFR40M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 13 Weeks | DO-203AB (DO-5) | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | 400V | 40A | 400V | 1.3V @ 125A | 40A | -65°C~190°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-41HFR160M | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs40hf160-datasheets-1856.pdf | DO-203AB, DO-5, Stud | 1 | 13 Weeks | EAR99 | unknown | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | 160°C | NOT SPECIFIED | 1 | O-MUPM-H1 | SINGLE | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 4500μA | Standard, Reverse Polarity | 1.6kV | 40A | 595A | 1 | 1600V | 1.5V @ 125A | -65°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6640 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/609 | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-jans1n6640-datasheets-6197.pdf | D, Axial | 2 | 8 Weeks | 2 | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/609D | WIRE | NOT SPECIFIED | 1N6640 | 2 | Single | NOT SPECIFIED | 1 | Qualified | 300mA | 1V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50V | 2.5A | 0.1μA | DO-35 | 4 ns | Standard | 50V | 300mA | 0.3A | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||
| JAN1N5809URS | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/477 | Surface Mount | Bulk | 1 (Unlimited) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | 2 | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | 8541.10.00.80 | MIL-19500 | YES | END | WRAP AROUND | 2 | 175°C | 1 | Qualified | O-LELF-R2 | SINGLE | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100V | 30ns | Standard | 125A | 1 | 3A | 60pF @ 10V 1MHz | 100V | 5μA @ 100V | 875mV @ 4A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| 1N6631US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 150°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n6628us-datasheets-2277.pdf | SQ-MELF, A | 2 | 17 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | METALLURGICALLY BONDED | Lead, Tin | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 1.4A | 1.95V | ISOLATED | HIGH VOLTAGE ULTRA FAST RECOVERY | 6.5 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1.1kV | 60A | 60 ns | Standard | 1.1kV | 1.4A | 1 | 40pF @ 10V 1MHz | 1100V | 4μA @ 1100V | 1.4V @ 1.4A | -65°C~150°C |
