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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG409AK/883P | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2016 | 16-DIP (0.300, 7.62mm) | 16 Weeks | 44V | 100Ohm | 16 | No | 2 | 16-DIP | 20V | 5V | 100Ohm | 12V ±5V~20V | 4:1 | SP4T | 500pA | 3pF 14pF | 150ns, 150ns | 20pC | 15Ohm (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7812DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7812dnt1ge3-datasheets-0414.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 37mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Powers | 150°C | S-XDSO-C5 | 15 ns | 20ns | 10 ns | 35 ns | 7.2A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 25A | 75V | N-Channel | 840pF @ 35V | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg405dy-datasheets-7457.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1μA | 16 | 665.986997mg | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | 600mW | GULL WING | 240 | 15V | 16 | 2 | 30 | 600mW | Multiplexer or Switches | 2 | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLD120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irld120pbf-datasheets-0552.pdf | 100V | 1.3A | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 270mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 490pF | 9.8 ns | 64ns | 64 ns | 21 ns | 1.3A | 10V | 100V | 2V | 1.3W Ta | 270mOhm | 100V | N-Channel | 490pF @ 25V | 270mOhm @ 780mA, 5V | 2V @ 250μA | 1.3A Ta | 12nC @ 5V | 270 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411HSDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 10 Weeks | 1.627801g | 44V | 13V | 35Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 470mW | NOT SPECIFIED | 15V | 16 | 1 | NOT SPECIFIED | 470mW | Multiplexer or Switches | Not Qualified | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 25Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NO/NC | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA66DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sira66dpt1ge3-datasheets-3047.pdf | PowerPAK® SO-8 | 14 Weeks | 1.9mOhm | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 62.5W Tc | N-Channel | 2.3m Ω @ 15A, 10V | 2.2V @ 1mA | 50A Tc | 66nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSAZ/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2017 | 16-SOIC (0.154, 3.90mm Width) | 18 Weeks | 44V | 35Ohm | 20 | No | 4 | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS26LDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss26ldnt1ge3-datasheets-3576.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 60V | 4.8W Ta 57W Tc | N-Channel | 1980pF @ 30V | 4.3mOhm @ 15A, 10V | 2.5V @ 250μA | 23.7A Ta 81.2A Tc | 48nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2017 | 16-SOIC (0.154, 3.90mm Width) | 18 Weeks | 44V | 13V | 35Ohm | 16 | No | 4 | 16-SOIC | 22V | 7V | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD25N06-22L_GE3 | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd25n0622lge3-datasheets-3819.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 1.437803g | Unknown | 22mOhm | 3 | No | 1 | Single | 62W | 1 | TO-252, (D-Pak) | 1.975nF | 8 ns | 10ns | 6 ns | 24 ns | 25A | 20V | 60V | 2V | 62W Tc | 22mOhm | 60V | N-Channel | 1975pF @ 25V | 22mOhm @ 20A, 10V | 2.5V @ 250μA | 25A Tc | 50nC @ 10V | 22 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG611EEY-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg612eeqt1ge4-datasheets-7492.pdf | 16-SOIC (0.154, 3.90mm Width) | 16 | 18 Weeks | unknown | 1 | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 4 | R-PDSO-G16 | 1GHz | 115Ohm | 2.5Ohm | 50ns | 75ns | 3V~12V ±3V~5V | 1:1 | SPST - NC | 100pA | 3pF 3pF | 50ns, 35ns | 1.4pC | 600m Ω | -74dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4114DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4114dyt1e3-datasheets-4177.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 30 ns | 13ns | 30 ns | 60 ns | 15.2A | 16V | SILICON | SWITCHING | 20V | 20V | 2.5W Ta 5.7W Tc | 20A | 0.006Ohm | N-Channel | 3700pF @ 10V | 6m Ω @ 10A, 10V | 2.1V @ 250μA | 20A Tc | 95nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.2mm | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg413dqt1e3-datasheets-3810.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 15 Weeks | Unknown | 36V | 13V | 80Ohm | 16 | yes | No | 4 | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 15V | 0.65mm | 16 | 1 | 30 | Multiplexer or Switches | 512/+-15V | 22V | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | NO | 1:1 | SPST - NO | ±15V | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD5N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihd5n50dge3-datasheets-4739.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | 2 | 8 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 104W | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | DRAIN | SWITCHING | 3V | 104W Tc | TO-252AA | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2519EDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg2519ednt1ge4-datasheets-6196.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 19 Weeks | unknown | 2 | 217MHz | 4Ohm | 2:1 | 1.8V~5.5V | SPDT | 40ns, 33ns | 14pC | 500m Ω | -61dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR622DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr622dpt1ge3-datasheets-4988.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 150V | 6.25W Ta 125W Tc | N-Channel | 1516pF @ 75V | 17.7mOhm @ 20A, 10V | 4.5V @ 250μA | 64.6A Ta 56.7A Tc | 41nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSDY-T1-E3 | Vishay Siliconix | $3.95 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 13 Weeks | 547.485991mg | 44V | 13V | 80Ohm | 16 | yes | unknown | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 15V | 1.27mm | DG413 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD420PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd420pbf-datasheets-5258.pdf | 500V | 460mA | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | No SVHC | 4 | No | Single | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 360pF | 8 ns | 8.6ns | 8.6 ns | 33 ns | 370mA | 20V | 500V | 4V | 1W Ta | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 220mA, 10V | 4V @ 250μA | 370mA Ta | 24nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG406BDN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 12V | 500μA | 28 | 12 Weeks | 1.182714g | 36V | 7.5V | 100Ohm | 28 | yes | unknown | 1 | e3 | Matte Tin (Sn) | 450mW | QUAD | J BEND | 260 | 15V | DG406 | 28 | 16 | 40 | 450mW | 1 | Not Qualified | 125 ns | 94 ns | 20V | Multiplexer | 163 ns | Dual, Single | 5V | -15V | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 0.03A | 16:1 | ±5V~20V | 500pA | 6pF 108pF | 107ns, 88ns | 11pC | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH26N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh26n60et1ge3-datasheets-5628.pdf | 8-PowerTDFN | Lead Free | 4 | 14 Weeks | Unknown | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 202W Tc | 50A | 0.135Ohm | 353 mJ | N-Channel | 2815pF @ 100V | 135m Ω @ 13A, 10V | 4V @ 250μA | 25A Tc | 116nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2010 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 8 Weeks | 540.001716mg | 36V | 13V | 35Ohm | 8 | no | unknown | 1 | e0 | TIN LEAD | 400mW | GULL WING | 240 | 15V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | Not Qualified | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NO | 12V ±15V | 1:1 | SPST - NC | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB15N60E-GE3 | Vishay Siliconix | $4.32 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb15n60ege3-datasheets-5978.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 280mOhm | 3 | AVALANCHE RATED | No | GULL WING | 4 | 1 | Single | 180W | 1 | FET General Purpose Powers | R-PSSO-G2 | 17 ns | 77ns | 66 ns | 35 ns | 15A | 20V | SILICON | SWITCHING | 2V | 180W Tc | 600V | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG509BEJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~125°C TA | Tube | 1 (Unlimited) | CMOS | 500μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg508bent1ge4-datasheets-3833.pdf | 16-DIP (0.300, 7.62mm) | 15V | 250MHz | Lead Free | 16 | 12 Weeks | 1.627801g | 44V | 12V | 500Ohm | 16 | yes | No | 2 | 501mW | 15V | DG509 | 16 | 8 | 0.6mA | 2 | 340 ns | 300 ns | 20V | Multiplexer | Dual | 5V | -15V | 380Ohm | 81 dB | 10Ohm | BREAK-BEFORE-MAKE | 0.03A | 4:1 | SP4T | ±5V~20V | 1nA | 3pF 8pF | 250ns, 240ns | 2pC | 10 Ω | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA18N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha18n60ee3-datasheets-6314.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 34W Tc | TO-220AB | 18A | 45A | 0.202Ohm | 204 mJ | N-Channel | 1640pF @ 100V | 202m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441LDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 16-DIP (0.300, 7.62mm) | 4 | 280MHz | 30Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP100N60E-GE3 | Vishay Siliconix | $3.81 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp100n60ege3-datasheets-6568.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 208W Tc | N-Channel | 1851pF @ 100V | 100mOhm @ 13A, 10V | 5V @ 250μA | 30A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG485AZ/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg485az883-datasheets-2762.pdf | 20-LCC | 20 | 25V | 85Ohm | 20 | no | No | 8 | e0 | Tin/Lead (Sn/Pb) | YES | QUAD | 1.27mm | 20 | Multiplexer or Switches | 5+-15V | 8 | 22V | COMMON OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO/NC | ±15V | 1nA | 7pF 43pF | 200ns, 200ns | 17pC | 5.1 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH180N60E-T1-GE3 | Vishay Siliconix | $4.30 |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh180n60et1ge3-datasheets-5599.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 114W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG458DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg458dj-datasheets-2781.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 100μA | 1.627801g | 36V | 13V | 1.5kOhm | 16 | No | 1W | 1 | 1 | 16-PDIP | 250 ns | 250 ns | 18V | 500 ns | Dual, Single | 4.5V | 1.5kOhm | 8:1 | ±4.5V~18V | 1nA | 5pF 15pF | 250ns, 250ns | 90Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | 60V | 7.7A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 8 Weeks | 329.988449mg | Unknown | 200mOhm | 3 | No | 1 | Single | 2.5W | 1 | TO-251AA | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | 60V | 2V | 2.5W Ta 25W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V |
