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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | On-state Resistance Match-Nom | Switching | Feedback Cap-Max (Crss) | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DG538ADJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Through Hole | CMOS | 600μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg534adne3-datasheets-2500.pdf | 28-DIP (0.600, 15.24mm) | 39.7mm | 3.31mm | 14.73mm | 500MHz | 2mA | 28 | 4.190003g | 18V | 10V | 90Ohm | 28 | yes | SELECTABLE DUAL 4-CHANNEL | No | 1 | 600μA | e3 | T-Switch Configuration | Matte Tin (Sn) | Ultrasound, Video | 625mW | 15V | DG538 | 28 | 2 | 625mW | 515-3V | 300 ns | 175 ns | 15V | 12V | Multiplexer | 300 ns | Dual, Single | 10V | -3V | 8 | 90Ohm | 9Ohm | BREAK-BEFORE-MAKE | 500ns | 4:1 | 10V~21V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4860DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4860dyt1ge3-datasheets-6401.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.6W | 1 | FET General Purpose Powers | 18 ns | 12ns | 19 ns | 46 ns | 11A | 20V | SILICON | SWITCHING | 1.6W Ta | 1.1A | 30V | N-Channel | 8m Ω @ 16A, 10V | 1V @ 250μA (Min) | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG540DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | 0°C | 3.5mA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 20-LCC (J-Lead) | 9.04mm | 3.69mm | 9.04mm | 15V | 500MHz | 6mA | 722.005655mg | 18V | 10V | 60Ohm | 20 | No | RGB, T-Switch Configuration | Video | 800mW | 4 | 800mW | 20-PLCC (9x9) | 500MHz | SPST | 70 ns | 50 ns | 15V | Dual, Single | 10V | 4 | 4 | 60Ohm | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6469DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6469dqt1ge3-datasheets-0848.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.5W | 1 | Not Qualified | 30ns | 30 ns | 85 ns | 6A | 8V | SILICON | 1.5W Ta | 6A | 30A | 0.031Ohm | 8V | P-Channel | 28m Ω @ 6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB90EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjb90ept1ge3-datasheets-0849.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 80V | 48W | 2 N-Channel (Dual) | 1200pF @ 25V | 21.5mOhm @ 10A, 10V | 3.5V @ 250μA | 30A Tc | 25nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7358ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7358adpt1e3-datasheets-6483.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 506.605978mg | 8 | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | Not Qualified | R-PDSO-C5 | 21 ns | 10ns | 10 ns | 83 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 0.0042Ohm | 30V | N-Channel | 4650pF @ 15V | 4.2m Ω @ 23A, 10V | 3V @ 250μA | 14A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4936BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4936bdyt1ge3-datasheets-1205.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | 2.8W | GULL WING | 260 | SI4936 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | 5 ns | 25ns | 10 ns | 12 ns | 6.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 3V | 0.035Ohm | 30V | 2 N-Channel (Dual) | 530pF @ 15V | 35m Ω @ 5.9A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5858DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5858dut1e3-datasheets-5983.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 6 | 8 | EAR99 | unknown | e3 | PURE MATTE TIN | C BEND | 260 | 8 | 1 | 30 | 1 | Not Qualified | R-XDSO-C6 | 20 ns | 65ns | 10 ns | 40 ns | 6A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 2.3W Ta 8.3W Tc | 7.2A | 20A | 0.039Ohm | N-Channel | 520pF @ 10V | 39m Ω @ 4.4A, 4.5V | 1V @ 250μA | 6A Tc | 16nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7212DN-T1-E3 | Vishay Siliconix | $1.31 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7212dnt1e3-datasheets-2260.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7212 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Power | S-XDSO-C6 | 10 ns | 12ns | 12 ns | 30 ns | 6.8A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4.9A | 0.036Ohm | 30V | 2 N-Channel (Dual) | 36m Ω @ 6.8A, 10V | 1.6V @ 250μA | 4.9A | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7302DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7302dnt1e3-datasheets-9289.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 40 | 3.8W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 15 ns | 20 ns | 2.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 220V | 3.8W Ta 52W Tc | 0.32Ohm | N-Channel | 645pF @ 15V | 320m Ω @ 2.3A, 10V | 4V @ 250μA | 8.4A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA527DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia527djt1ge3-datasheets-4179.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | 710μOhm | EAR99 | unknown | 7.8W | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 10 ns | 10ns | 10 ns | 22 ns | 4.5A | 8V | 12V | 12V | N and P-Channel | 500pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 15nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7392DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7392dpt1e3-datasheets-6589.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 7ns | 9 ns | 46 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 9A | 50A | 0.00975Ohm | 45 mJ | 30V | N-Channel | 9.75m Ω @ 15A, 10V | 3V @ 250μA | 9A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4925DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4925ddyt1ge3-datasheets-5125.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 29mOhm | 8 | EAR99 | No | 5W | GULL WING | SI4925 | 8 | 2 | Dual | 5W | 2 | 150°C | 10 ns | 35ns | 16 ns | 45 ns | -7.3A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | -30V | 2 P-Channel (Dual) | 1350pF @ 15V | -3 V | 29m Ω @ 7.3A, 10V | 3V @ 250μA | 8A | 50nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7664DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7664dpt1ge3-datasheets-6652.pdf | PowerPAK® SO-8 | 3.1mOhm | Single | 5.4W | PowerPAK® SO-8 | 7.77nF | 41 ns | 40A | 12V | 30V | 5.4W Ta 83W Tc | 3.1mOhm | 30V | N-Channel | 7770pF @ 15V | 3.1mOhm @ 20A, 10V | 1.8V @ 250μA | 40A Tc | 125nC @ 10V | 3.1 mΩ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3985EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq3985evt1ge3-datasheets-6138.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 3W | MO-193AA | 3.9A | 0.145Ohm | 57 pF | 2 P-Channel (Dual) | 350pF @ 10V | 145m Ω @ 2.8A, 4.5V | 1.5V @ 250μA | 3.9A Tc | 4.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7664DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7664dpt1ge3-datasheets-6652.pdf | PowerPAK® SO-8 | 3.1mOhm | Single | 5.4W | PowerPAK® SO-8 | 7.77nF | 103ns | 9 ns | 41 ns | 40A | 12V | 30V | 5.4W Ta 83W Tc | 3.1mOhm | 30V | N-Channel | 7770pF @ 15V | 3.1mOhm @ 20A, 10V | 1.8V @ 250μA | 40A Tc | 125nC @ 10V | 3.1 mΩ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7228DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7228dnt1ge3-datasheets-7581.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 13 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7228 | 8 | Dual | 30 | 2.6W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 10ns | 10 ns | 15 ns | 8.8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 35A | 30V | 2 N-Channel (Dual) | 480pF @ 15V | 20m Ω @ 8.8A, 10V | 2.5V @ 250μA | 26A | 13nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1413EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1413edht1e3-datasheets-7952.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 115MOhm | 6 | yes | EAR99 | No | PURE MATTE TIN (SN) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1 | Other Transistors | 750 ns | 1.6μs | 3.9 μs | 3.9 μs | 2.3A | 12V | SILICON | SWITCHING | 20V | 20V | 1W Ta | P-Channel | 115m Ω @ 2.9A, 4.5V | 450mV @ 100μA (Min) | 2.3A Ta | 8nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5504BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 140mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | DUAL | C BEND | 260 | SI5504 | 8 | 2 | 40 | 1.5W | 2 | Other Transistors | 4 ns | 10ns | 5 ns | 10 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.12W 3.1W | 4A | 10A | 30V | N and P-Channel | 220pF @ 15V | 65m Ω @ 3.1A, 10V | 3V @ 250μA | 4A 3.7A | 7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4418DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4418dyt1e3-datasheets-8315.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.5W | 1 | 15 ns | 15ns | 20 ns | 40 ns | 2.3A | 20V | SILICON | SWITCHING | 1.5W Ta | 0.0023A | 200V | N-Channel | 130m Ω @ 3A, 10V | 4V @ 250μA | 2.3A Ta | 30nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7972DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si7972dpt1ge3-datasheets-0329.pdf | PowerPAK® SO-8 Dual | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 22W | 2 N-Channel (Dual) | 1050pF @ 30V | 18m Ω @ 11A, 10V | 2.7V @ 250μA | 8A Tc | 11nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7403BDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7403bdnt1e3-datasheets-6135.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 30 | 3.1W | 1 | Other Transistors | S-XDSO-C5 | 5 ns | 51ns | 60 ns | 33 ns | 5.1A | 8V | SILICON | DRAIN | SWITCHING | 3.1W Ta 9.6W Tc | 8A | 20A | 0.074Ohm | 20V | P-Channel | 430pF @ 10V | 74m Ω @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 15nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1926DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1926dlt1ge3-datasheets-1035.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 3 | yes | EAR99 | Tin | No | e3 | 510mW | GULL WING | 260 | 6 | 30 | 2 | FET General Purpose Power | R-PDSO-G6 | 6.5 ns | 12ns | 14 ns | 13 ns | 370mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 18.5pF @ 30V | 1.4 Ω @ 340mA, 10V | 2.5V @ 250μA | 1.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4484EY-T1-GE3 | Vishay Siliconix | $1.73 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4484eyt1e3-datasheets-8352.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | No SVHC | 8 | 1 | Single | 1.8W | 1 | 8-SO | 4.8A | 20V | 100V | 2V | 1.8W Ta | 34mOhm | 100V | N-Channel | 34mOhm @ 6.9A, 10V | 2V @ 250μA (Min) | 4.8A Ta | 30nC @ 10V | 34 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1024X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1024xt1ge3-datasheets-3402.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 8.193012mg | Unknown | 700mOhm | 6 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | 250mW | FLAT | 260 | SI1024 | 6 | 1 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 600mA | 6V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 450mV | 0.485A | 20V | 2 N-Channel (Dual) | 700m Ω @ 600mA, 4.5V | 900mV @ 250μA | 485mA | 0.75nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR408DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir408dpt1ge3-datasheets-2568.pdf | PowerPAK® SO-8 | 8 | 506.605978mg | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | R-XDSO-C8 | 20 ns | 28ns | 11 ns | 30 ns | 21.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 4.8W Ta 44.6W Tc | 50A | 70A | 0.0063Ohm | N-Channel | 1230pF @ 15V | 6.3m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4940AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq4940aeyt1ge3-datasheets-4275.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 506.605978mg | EAR99 | unknown | 4W | GULL WING | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | R-PDSO-G8 | 8 ns | 13ns | 9 ns | 20 ns | 8A | 20V | SILICON | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 8A | 55 pF | 2 N-Channel (Dual) | 741pF @ 20V | 24m Ω @ 5.3A, 10V | 2.5V @ 250μA | 43nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE726DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie726dft1e3-datasheets-3160.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 60 ns | 35ns | 30 ns | 55 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 80A | 0.0033Ohm | 125 mJ | 30V | N-Channel | 7400pF @ 15V | 2.4m Ω @ 25A, 10V | 3V @ 250μA | 60A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4900DY-T1-E3 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4900dyt1e3-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 58mOhm | 8 | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | SI4900 | 8 | 2 | Dual | 40 | 2W | 2 | 10 ns | 15ns | 10 ns | 20 ns | 5.3A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 60V | 2 N-Channel (Dual) | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7840BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7840bdpt1e3-datasheets-3139.pdf | PowerPAK® SO-8 | 5 | 15 Weeks | 506.605978mg | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-PDSO-C5 | 17 ns | 14ns | 14 ns | 39 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 50A | 0.0085Ohm | 20 mJ | N-Channel | 8.5m Ω @ 16.5A, 10V | 3V @ 250μA | 11A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V |
