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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI2312CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si2312cdst1ge3-datasheets-6616.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 31.8MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Powers | 150°C | 8 ns | 17ns | 8 ns | 31 ns | 6A | 8V | SILICON | SWITCHING | 1V | 1.25W Ta 2.1W Tc | 6A | 20V | N-Channel | 865pF @ 10V | 31.8m Ω @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 18nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI4840BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4840bdyt1e3-datasheets-4670.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Powers | 150°C | 10 ns | 12ns | 10 ns | 30 ns | 12.4A | 20V | SILICON | SWITCHING | 1V | 2.5W Ta 6W Tc | 40V | N-Channel | 2000pF @ 20V | 1 V | 9m Ω @ 12.4A, 10V | 3V @ 250μA | 19A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SQJA37EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja37ept1ge3-datasheets-8130.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 30V | 45W Tc | P-Channel | 4900pF @ 25V | 9.2mOhm @ 6A, 10V | 2.5V @ 250μA | 30A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS73DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss73dnt1ge3-datasheets-8808.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 150V | 5.1W Ta 65.8W Tc | P-Channel | 719pF @ 75V | 125mOhm @ 10A, 10V | 4V @ 250μA | 4.4A Ta 16.2A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4346DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4346dyt1e3-datasheets-9282.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | No SVHC | 23mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.31W | 1 | 9 ns | 11ns | 11 ns | 40 ns | 8A | 12V | SILICON | SWITCHING | 2V | 1.31W Ta | 5.9A | 30V | N-Channel | 2 V | 23m Ω @ 8A, 10V | 2V @ 250μA | 5.9A Ta | 10nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||
| SI5443DC-T1-E3 | Vishay Siliconix | $0.34 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5443dct1e3-datasheets-0192.pdf | 8-SMD, Flat Lead | 8 | 21 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | Not Qualified | 30ns | 30 ns | 50 ns | 3.6A | 12V | SILICON | 1.3W Ta | 0.065Ohm | 20V | P-Channel | 65m Ω @ 3.6A, 4.5V | 600mV @ 250μA (Min) | 3.6A Ta | 14nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| SI4666DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4666dyt1ge3-datasheets-0673.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.5W | 1 | 13 ns | 12ns | 10 ns | 27 ns | 16.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta 5W Tc | 25V | N-Channel | 1145pF @ 10V | 600 mV | 10m Ω @ 10A, 10V | 1.5V @ 250μA | 16.5A Tc | 34nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| IRFR214TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 2.5W Ta 25W Tc | TO-252AA | 8.8A | 2Ohm | N-Channel | 140pF @ 25V | 2 Ω @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SIDR402DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sidr402dpt1ge3-datasheets-2093.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 40V | 6.25W Ta 125W Tc | 730μOhm | N-Channel | 9100pF @ 20V | 0.88mOhm @ 20A, 10V | 2.3V @ 250μA | 64.6A Ta 100A Tc | 165nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC50PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfpc50pbf-datasheets-2727.pdf | 600V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 600mOhm | 3 | 1 | Single | 180W | 1 | TO-247-3 | 2.7nF | 18 ns | 37ns | 36 ns | 88 ns | 11A | 20V | 600V | 4V | 180W Tc | 830 ns | 600mOhm | 600V | N-Channel | 2700pF @ 25V | 600mOhm @ 6A, 10V | 4V @ 250μA | 11A Tc | 140nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI7153DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-si7153dnt1ge3-datasheets-7840.pdf | PowerPAK® 1212-8 | 14 Weeks | 9.5mOhm | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 52W Tc | P-Channel | 3600pF @ 15V | 9.5m Ω @ 20A, 10V | 2.5V @ 250μA | 18A Tc | 93nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD3N50DT5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd3n50dge3-datasheets-4436.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-PAK (TO-252AA) | 500V | 69W Tc | N-Channel | 175pF @ 100V | 3.2Ohm @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR403EDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir403edpt1ge3-datasheets-4467.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 240 | 40 | 5W | 1 | R-PDSO-C5 | 40A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 5W Ta 56.8W Tc | 60A | 0.0065Ohm | P-Channel | 4620pF @ 15V | 6.5m Ω @ 13A, 10V | 2.8V @ 250μA | 40A Tc | 153nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SQ7002K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq7002kt1ge3-datasheets-5441.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 21 Weeks | 3 | EAR99 | No | DUAL | GULL WING | 3 | 500mW | 1 | FET General Purpose Power | 14.6 ns | 15.3ns | 10.6 ns | 8.6 ns | 320mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 500mW Tc | N-Channel | 24pF @ 30V | 1.3 Ω @ 500mA, 10V | 2.5V @ 250μA | 320mA Tc | 1.4nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIS429DNT-T1-GE3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis429dntt1ge3-datasheets-6313.pdf | PowerPAK® 1212-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 27.8W Tc | P-Channel | 1350pF @ 15V | 21m Ω @ 10.5A, 10V | 3V @ 250μA | 20A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS472BDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 30V | 3.2W Ta 19.8W Tc | N-Channel | 1000pF @ 15V | 7.5mOhm @ 10A, 10V | 2.4V @ 250μA | 15.3A Ta 38.3A Tc | 21.5nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24STRRPBF | Vishay Siliconix | $0.47 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z24spbf-datasheets-1340.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 12 Weeks | 1.437803g | 280mOhm | 3 | No | 1 | Single | D2PAK | 570pF | 13 ns | 68ns | 29 ns | 15 ns | -11A | 20V | 60V | 3.7W Ta 60W Tc | 280mOhm | -60V | P-Channel | 570pF @ 25V | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI7788DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7788dpt1ge3-datasheets-9131.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 44 ns | 21ns | 18 ns | 45 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5V | 5.2W Ta 69W Tc | 29.5A | 70A | N-Channel | 5370pF @ 15V | 3.1m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 125nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SIHB6N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb6n80ege3-datasheets-9540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 800V | 78W Tc | N-Channel | 827pF @ 100V | 940mOhm @ 3A, 10V | 4V @ 250μA | 5.4A Tc | 44nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7159DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7159dpt1ge3-datasheets-0367.pdf | PowerPAK® SO-8 | 5 | 21 Weeks | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 40 | 5W | 1 | Other Transistors | Not Qualified | R-XDSO-C5 | 14ns | 11 ns | 40 ns | 29A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 5.4W Ta 83W Tc | 20.7A | 60A | 0.007Ohm | 20 mJ | -25V | P-Channel | 5170pF @ 15V | 7m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 180nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||
| SIHD6N65ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n65ege3-datasheets-5134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 650V | 78W Tc | N-Channel | 820pF @ 100V | 600mOhm @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM60N10-17-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sum60n1017e3-datasheets-1806.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | 16.5mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 3.75W | 1 | R-PSSO-G2 | 15 ns | 12ns | 10 ns | 30 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 3.75W Ta 150W Tc | 80 mJ | 100V | N-Channel | 4300pF @ 25V | 60ns | 16.5m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 100nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SQJQ410EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq410elt1ge3-datasheets-2441.pdf | 8-PowerTDFN | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100V | 136W Tc | N-Channel | 7350pF @ 25V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 135A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60AEL-GE3 | Vishay Siliconix | $4.23 |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60aelge3-datasheets-3407.pdf | TO-247-3 | TO-247AC | 600V | 208W Tc | N-Channel | 1757pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD110 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd110pbf-datasheets-8803.pdf | 100V | 1A | 4-DIP (0.300, 7.62mm) | Contains Lead | 540mOhm | 4 | Lead, Tin | No | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 180pF | 6.9 ns | 16ns | 16 ns | 15 ns | 1A | 20V | 100V | 1.3W Ta | 540mOhm | 100V | N-Channel | 180pF @ 25V | 540mOhm @ 600mA, 10V | 4V @ 250μA | 1A Ta | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF710 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irf710pbf-datasheets-8514.pdf | 400V | 2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220AB | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 36W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFP244 | Vishay Siliconix | $0.84 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp244pbf-datasheets-6432.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | 3 | 1 | Single | TO-247-3 | 1.4nF | 14 ns | 49ns | 24 ns | 42 ns | 15A | 20V | 250V | 150W Tc | 280mOhm | 250V | N-Channel | 1400pF @ 25V | 280mOhm @ 9A, 10V | 4V @ 250μA | 15A Tc | 63nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120 | Vishay Siliconix | $0.09 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | Single | 2.5W | D-Pak | 390pF | 29ns | 25 ns | 21 ns | 5.6A | 20V | 100V | 2.5W Ta 42W Tc | 600mOhm | -100V | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP264 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp264pbf-datasheets-1523.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 38.000013g | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 5.4nF | 22 ns | 99ns | 92 ns | 110 ns | 38A | 20V | 250V | 280W Tc | 75mOhm | N-Channel | 5400pF @ 25V | 75mOhm @ 23A, 10V | 4V @ 250μA | 38A Tc | 210nC @ 10V | 75 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL530 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl530pbf-datasheets-8562.pdf | 100V | 14A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220AB | 930pF | 4.7 ns | 100ns | 48 ns | 22 ns | 15A | 10V | 100V | 88W Tc | 160mOhm | 100V | N-Channel | 930pF @ 25V | 160mOhm @ 9A, 5V | 2V @ 250μA | 15A Tc | 28nC @ 5V | 160 mΩ | 4V 5V | ±10V |
