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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | On-State Resistance | Threshold Voltage | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG309BDQ-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 10 Weeks | 172.98879mg | 44V | 4V | 85Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | YES | 640mW | GULL WING | 240 | 15V | 0.65mm | 16 | 1 | 30 | Multiplexer or Switches | +-15/12V | 4 | Not Qualified | 200 ns | 150 ns | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI640GPBF | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli640gpbf-datasheets-4754.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 180mOhm | 3 | No | 200V | 1 | Single | 40W | 1 | TO-220-3 | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 9.9A | 10V | 200V | 200V | 2V | 40W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 2 V | 180mOhm @ 5.9A, 5V | 2V @ 250μA | 9.9A Tc | 66nC @ 10V | 180 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg221bdy-datasheets-7675.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 1.5mA | 16 | 8 Weeks | 1.627801g | 18V | 13V | 90Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 15V | 16 | 470mW | Multiplexer or Switches | Not Qualified | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | 4 | SEPARATE OUTPUT | 90Ohm | 90Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA58DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira58dpt1ge3-datasheets-5974.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 40V | 27.7W Tc | N-Channel | 3750pF @ 20V | 2.65m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG307BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg306bdj-datasheets-7728.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 100μA | 10 Weeks | 1.620005g | 36V | 13V | 50Ohm | 14 | no | No | 470mW | 14 | 470mW | 2 | 110 ns | 70 ns | 22V | 15V | Dual, Single | 7V | 4 | 50Ohm | 50Ohm | 2:1 | SPDT | ±15V | 5nA | 14pF 14pF | 110ns, 70ns (Typ) | 30pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4850EY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4850eyt1e3-datasheets-8689.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.3W | 1 | FET General Purpose Powers | 10 ns | 10ns | 12 ns | 25 ns | 6A | 20V | SILICON | SWITCHING | 3V | 1.7W Ta | 6A | 0.022Ohm | 60V | N-Channel | 3 V | 22m Ω @ 6A, 10V | 3V @ 250μA | 6A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2016 | 16-DIP (0.300, 7.62mm) | 7.62mm | Lead Free | 16 | 44V | 13V | 100Ohm | 16 | yes | 1 | DUAL | NOT SPECIFIED | 15V | 2.54mm | 16 | 8 | SINGLE-ENDED MULTIPLEXER | NOT SPECIFIED | 900mW | Multiplexer or Switches | 2mA | 1 | Not Qualified | 20V | 5V | -15V | 8 | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 225ns | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF520PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf520pbf-datasheets-9409.pdf | 100V | 9.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 270mOhm | 3 | Tin | No | 1 | Single | 60W | 1 | TO-220AB | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 9.2A | 20V | 100V | 4V | 60W Tc | 260 ns | 270mOhm | N-Channel | 360pF @ 25V | 10 V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500μA | 16 | 8 Weeks | 1.627801g | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | TIN LEAD | NO | 450mW | NOT SPECIFIED | 15V | 16 | 2 | DPST | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P08-25L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0825lge3-datasheets-0444.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 136W | 1 | TO-252AA | 10 ns | 11ns | 16 ns | 71 ns | 50A | 20V | 80V | 136W Tc | 25mOhm | P-Channel | 5350pF @ 25V | 25mOhm @ 10.5A, 10V | 2.5V @ 250μA | 50A Tc | 137nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | Non-RoHS Compliant | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 1.627801g | 12V | 2.7V | 17Ohm | 16 | No | 900mW | 4 | 16-PDIP | 280MHz | 85 ns | 60 ns | 6V | Dual, Single | 3V | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2301ES-T1_GE3 | Vishay Siliconix | $0.44 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2301est1ge3-datasheets-2208.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | TO-236 (SOT-23) | 20V | 3W Tc | P-Channel | 425pF @ 10V | 120mOhm @ 2.8A, 4.5V | 1.5V @ 250μA | 3.9A Tc | 8nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 547.485991mg | 12V | 2.7V | 17Ohm | no | No | 4 | e0 | TIN LEAD | YES | 650mW | GULL WING | 240 | 5V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 3/12/+-5V | 4 | R-PDSO-G16 | 280MHz | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS30DN-T1-GE3 | Vishay Siliconix | $1.09 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siss30dnt1ge3-datasheets-3253.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 80V | 4.8W Ta 57W Tc | N-Channel | 1666pF @ 10V | 8.25mOhm @ 10A, 10V | 3.8V @ 250μA | 15.9A Ta 54.7A Tc | 40nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 8 Weeks | 1.627801g | 44V | 13V | 35Ohm | 16 | no | No | 4 | e0 | TIN LEAD | NO | 470mW | 15V | 16 | 1 | Multiplexer or Switches | 4 | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 35Ohm | 25Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS184DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis184dnt1ge3-datasheets-3732.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 60V | 3.7W Ta 52W Tc | N-Channel | 1490pF @ 30V | 5.8mOhm @ 10A, 10V | 3.4V @ 250μA | 17.4A Ta 65.3A Tc | 32nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418LEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg419ledqt1ge3-datasheets-7465.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 16 Weeks | 1 | 8-MSOP | 9Ohm | 3V~16V ±3V~8V | 1:1 | SPST | 10nA | 11pF 32pF | 40ns, 35ns | 26pC | -72dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS46DN-T1-GE3 | Vishay Siliconix | $1.28 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss46dnt1ge3-datasheets-3905.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 100V | 5W Ta 65.7W Tc | N-Channel | 2140pF @ 50V | 12.8mOhm @ 10A, 10V | 3.4V @ 250μA | 12.5A Ta 45.3A Tc | 42nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG469EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 3μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg470eyt1e3-datasheets-7560.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 1.1mm | 3mm | Lead Free | 6μA | 8 | 12 Weeks | 139.989945mg | 15V | 4.5V | 8Ohm | 8 | yes | No | 1 | 3μA | e3 | MATTE TIN | 320mW | GULL WING | 260 | 15V | 0.65mm | DG469 | 8 | 1 | 40 | 320mW | Multiplexer or Switches | 166 ns | 108 ns | 22V | 15V | Dual, Single | 4.5V | -15V | 2 | 3.6Ohm | 1 | 6Ohm | 57 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 12V ±4.5V~15V | 2:1 | SPDT | 500pA | 37pF 85pF | 166ns, 108ns | 58pC | 120m Ω | -63dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR826BDP-T1-RE3 | Vishay Siliconix | $1.39 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir826bdpt1re3-datasheets-3897.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5W Ta 83W Tc | N-Channel | 3030pF @ 40V | 5.1mOhm @ 15A, 10V | 3.8V @ 250μA | 19.8A Ta 80.8A Tc | 69nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | 26Ohm | 16 | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 0.65mm | 1 | NOT SPECIFIED | 4 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NO/NC | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU214PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 2Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 4V | 2.5W Ta 25W Tc | 8.8A | N-Channel | 140pF @ 25V | 2 Ω @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg403dje3-datasheets-0863.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 55Ohm | 16 | yes | unknown | 2 | 10nA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG405 | 16 | 2 | 40 | 600mW | Multiplexer or Switches | 2 | Not Qualified | DPST, SPDT | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU6N62E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihu6n62ege3-datasheets-5213.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 18 Weeks | 329.988449mg | Unknown | 3 | yes | No | 1 | Single | 1 | 12 ns | 10ns | 16 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 620V | 78W Tc | 6A | 0.9Ohm | 88 mJ | N-Channel | 578pF @ 100V | 900m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DN-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | Lead Free | 500μA | 28 | 12 Weeks | 1.182714g | 44V | 7.5V | 100Ohm | 28 | yes | No | 1 | e3 | Matte Tin (Sn) | 450mW | QUAD | J BEND | 260 | 15V | DG407 | 28 | 8 | 40 | 450mW | 2 | 600 ns | 300 ns | 20V | Multiplexer | 350 ns | Dual, Single | 5V | -15V | 16 | 100Ohm | 69 dB | 5Ohm | BREAK-BEFORE-MAKE | 400ns | 12V ±5V~20V | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60ATRRPBF | Vishay Siliconix | $2.98 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 170W Tc | 750mOhm | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 8-CDIP (0.300, 7.62mm) | 7.62mm | 8 | 18 Weeks | 12V | 2.7V | 20Ohm | 8 | no | No | 1 | DUAL | 5V | 2.54mm | 8 | 1 | 600mW | Multiplexer or Switches | 6V | 5V | 3V | -5V | 1 | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 32ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP60020E-GE3 | Vishay Siliconix | $2.59 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup60020ege3-datasheets-5926.pdf | TO-220-3 | 14 Weeks | 80V | 375W Tc | N-Channel | 10680pF @ 40V | 2.4m Ω @ 30A, 10V | 4V @ 250μA | 150A Tc | 227nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | 5.08mm | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-CDIP (0.300, 7.62mm) | 19.305mm | 16 | 14 Weeks | 12V | 2.7V | 30Ohm | 16 | no | ALSO OPERATES WITH 2.7V TO 12V SINGLE SUPPLY | unknown | 4 | NO | DUAL | NOT SPECIFIED | 5V | 16 | 1 | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | 280MHz | 6V | 3V | -5V | SEPARATE OUTPUT | 30Ohm | 68 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 55ns | 83ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH26N60EF-T1-GE3 | Vishay Siliconix | $53.73 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh26n60eft1ge3-datasheets-6167.pdf | 8-PowerTDFN | 4 | 14 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 202W Tc | 67A | 0.141Ohm | 353 mJ | N-Channel | 2744pF @ 100V | 141m Ω @ 13A, 10V | 4V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±30V |
