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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG9409EDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | BICMOS | 0.95mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9408ednt1ge4-datasheets-0467.pdf | 16-VQFN Exposed Pad | 4mm | 4mm | 16 | 16 Weeks | 16 | 1 | e4 | NICKEL PALLADIUM GOLD | YES | QUAD | NO LEAD | 260 | 5V | 0.65mm | 4 | DIFFERENTIAL MULTIPLEXER | 30 | 2 | -5V | 7Ohm | 83 dB | 3.6Ohm | 43ns | 76ns | 2.7V~12V ±3V~6V | 4:1 | 2nA | 23pF 112pF | 70ns, 44ns | 29pC | 3.6 Ω (Max) | -85dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2315BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2315bdst1e3-datasheets-6333.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 3 | 14 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | Tin | No | 3A | e3 | 12V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 15 ns | 35ns | 35 ns | 50 ns | -3A | 8V | SILICON | -900mV | 750mW Ta | 0.05Ohm | -12V | P-Channel | 715pF @ 6V | -900 mV | 50m Ω @ 3.85A, 4.5V | 900mV @ 250μA | 3A Ta | 15nC @ 4.5V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 16 | 12 Weeks | 1.627801g | 44V | 13V | 80Ohm | 16 | yes | No | 4 | e3 | MATTE TIN | 470mW | 15V | DG412 | 16 | 1 | Multiplexer or Switches | 4 | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NO | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA437DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia437djt1ge3-datasheets-5129.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | Unknown | 6 | yes | EAR99 | No | DUAL | 3.5W | 1 | S-PDSO-N3 | 12.6A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | -400mV | 3.5W Ta 19W Tc | 29.7A | P-Channel | 2340pF @ 10V | 14.5m Ω @ 8A, 4.5V | 900mV @ 250μA | 29.7A Tc | 90nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2538DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | 1.1mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2537dqt1ge3-datasheets-8535.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 2μA | 10 | 143.193441mg | No SVHC | 4.3V | 1.25V | 4.5Ohm | 10 | No | 2 | Non-Inverting | 320mW | GULL WING | 3V | 0.5mm | DG2538 | 10 | 1 | Multiplexer or Switches | 2 | 366MHz | SPST | 35 ns | 20 ns | 2.75V | 2.5V | Dual, Single | 1.25V | 50mA | 4.5Ohm | 67 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 40ns | 55ns | NC | 2.6V~4.3V ±2.5V | 1:1 | SPST - NC | 250pA | 8pF 9pF | 30ns, 35ns | 2.2pC | 200m Ω | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ2001P | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-vq2001p-datasheets-6139.pdf | PDIP | 13 Weeks | 1.200007g | 14 | No | 2W | 4 | 2W | 4 | 150pF | 600mA | 20V | 30V | 2W | 2Ohm | 30V | 4 P-Channel | 150pF @ 15V | 2Ohm @ 1A, 12V | 4.5V @ 1mA | 600mA | Standard | 2 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5.08mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg442bdj-datasheets-7370.pdf | 16-DIP (0.300, 7.62mm) | 20.13mm | 7.62mm | 1μA | 16 | 10 Weeks | 25V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | NO | 470mW | NOT SPECIFIED | 15V | DG442 | 16 | 1 | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | 120ns | 220ns | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH615ADN-T1-GE3 | Vishay Siliconix | $0.26 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish615adnt1ge3-datasheets-7153.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 3.7W Ta 52W Tc | P-Channel | 5590pF @ 10V | 4.4mOhm @ 20A, 10V | 1.5V @ 250μA | 22.1A Ta 35A Tc | 183nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1411EN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.95mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg1413ent1ge4-datasheets-3369.pdf | 16-VQFN Exposed Pad | Lead Free | 1μA | 16 | 57.09594mg | Unknown | 24V | 4.5V | 1.8Ohm | 16 | No | 4 | YES | QUAD | 5V | 0.65mm | DG1411 | 1 | 4 | 210MHz | 150 ns | 120 ns | 15V | Dual, Single | 4.5V | -5V | 1.8Ohm | 80 dB | 0.08Ohm | 380ns | 510ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NC | 550pA | 11pF 24pF | 150ns, 120ns | -20pC | 80m Ω | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA106DJ-T1-GE3 | Vishay Siliconix | $0.70 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia106djt1ge3-datasheets-8035.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 60V | 3.5W Ta 19W Tc | N-Channel | 540pF @ 30V | 18.5mOhm @ 4A, 10V | 4V @ 250μA | 10A Ta 12A Tc | 13.5nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | 1999 | /files/vishaysiliconix-dg442dyt1-datasheets-7418.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 100μA | 16 | 6 Weeks | 665.986997mg | 36V | 13V | 85Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 900mW | GULL WING | 15V | 1.27mm | 16 | 4 | 900mW | Multiplexer or Switches | Not Qualified | SPST | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4064EY-T1_GE3 | Vishay Siliconix | $1.39 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4064eyt1ge3-datasheets-8440.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.8W | 1 | 175°C | R-PDSO-G8 | 16 ns | 33 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 6.8W Tc | 73 pF | 60V | N-Channel | 2096pF @ 25V | 19.8m Ω @ 6.1A, 10V | 2.5V @ 250μA | 12A Tc | 43nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG186AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg186ap883-datasheets-7590.pdf | 14-DIP (0.300, 7.62mm) | 14 | 10Ohm | 14 | no | Yes | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 14 | 825mW | Multiplexer or Switches | 1 | Not Qualified | 38535Q/M;38534H;883B | 18V | 10V | 2 | 10Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 10nA | 21pF 17pF | 400ns, 200ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2333DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2333dst1e3-datasheets-8489.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | Other Transistors | 25 ns | 60 ns | 72 ns | -4.1A | 8V | SILICON | SWITCHING | 12V | -1V | 750mW Ta | P-Channel | 1100pF @ 6V | -1 V | 32m Ω @ 5.3A, 4.5V | 1V @ 250μA | 4.1A Ta | 18nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG213DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg213dy-datasheets-7631.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 547.485991mg | 40V | 3V | 60Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 512/+-15V | 130 ns | 100 ns | 22V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 60Ohm | 60Ohm | BREAK-BEFORE-MAKE | 200ns | 3V~40V ±3V~22V | 1:1 | SPST - NO/NC | 500pA | 5pF 5pF | 130ns, 100ns | 1pC | 1 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7129DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7129dnt1ge3-datasheets-1220.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 11.4mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.8W | 1 | Other Transistors | S-XDSO-C5 | 50 ns | 43ns | 14 ns | 36 ns | 14.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 52.1W Tc | 35A | 60A | P-Channel | 3345pF @ 15V | 11.4m Ω @ 14.4A, 10V | 2.8V @ 250μA | 35A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG184BP | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -25°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -25°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg183bp-datasheets-7574.pdf | 16-DIP (0.300, 7.62mm) | 50Ohm | 16 | Yes | 2 | 900mW | 2 | 16-DIP | 18V | 10V | 4 | 4 | 50Ohm | 2:1 | DPST - NO | ±15V | 5nA | 9pF 6pF | 180ns, 150ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe30pbf-datasheets-2300.pdf | 800V | 4.1A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3Ohm | 3 | Tin | No | 48A | 800V | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 4V | 125W Tc | 720 ns | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 4 V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301ABK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | 14-CDIP (0.300, 7.62mm) | 14 Weeks | 1 | 14-CERDIP | 50Ohm | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70101EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sup70101elge3-datasheets-3670.pdf | TO-220-3 | 19.31mm | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 1 | 30 | 375W | 175°C | 20 ns | 110 ns | -120A | 20V | 100V | 375W Tc | 8.1mOhm | -100V | P-Channel | 7000pF @ 50V | 2.5V @ 250μA | 120A Tc | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG303BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-SOIC (0.154, 3.90mm Width) | 8.75mm | 1.55mm | 4mm | 15V | 1mA | 14 | 8 Weeks | 1.620005g | 36V | 13V | 50Ohm | 14 | no | No | 4 | 600mW | GULL WING | 15V | 14 | SPST | 600mW | Multiplexer or Switches | 2 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 50Ohm | 50Ohm | BREAK-BEFORE-MAKE | 2:1 | DPST - NO/NC | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-irfp460bpbf-datasheets-4496.pdf | TO-247-3 | 3 | 8 Weeks | 38.000013g | No SVHC | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 278W | 1 | 24 ns | 31ns | 56 ns | 117 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 4V | 278W Tc | TO-247AC | 62A | 0.25Ohm | 500V | N-Channel | 3094pF @ 100V | 250m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg300aak883-datasheets-7683.pdf | 14-CDIP (0.300, 7.62mm) | 14 | 36V | 13V | 50Ohm | 14 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 14 | 825mW | Multiplexer or Switches | 1 | 38535Q/M;38534H;883B | 22V | 7V | -15V | 2 | 50Ohm | BREAK-BEFORE-MAKE | 300ns | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB20N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb20n50kpbf-datasheets-5495.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 210mOhm | 3 | No | 1 | Single | 280W | 1 | TO-220AB | 2.87nF | 22 ns | 74ns | 33 ns | 45 ns | 20A | 30V | 500V | 5V | 280W Tc | 250mOhm | 500V | N-Channel | 2870pF @ 25V | 250mOhm @ 12A, 10V | 5V @ 250μA | 20A Tc | 110nC @ 10V | 250 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308BAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishay-dg308bak883-datasheets-8509.pdf | 16-CDIP (0.300, 7.62mm) | 16 | 18 Weeks | 44V | 4V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 16 | Multiplexer or Switches | +-15V | 4 | 22V | 4V | -15V | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 300ns | NO | 4V~44V ±4V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7172ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7172adpt1re3-datasheets-5978.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | N-Channel | 1110pF @ 100V | 50mOhm @ 10A, 10V | 3.1V @ 250μA | 19.5nC @ 10V | 7.5V 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG387AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg384aak883-datasheets-7766.pdf | 14-CDIP (0.300, 7.62mm) | 14 | 36V | 13V | 50Ohm | 14 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 15V | 14 | SPDT | Multiplexer or Switches | +-15V | 2 | 38535Q/M;38534H;883B | 22V | 7V | -15V | 50Ohm | BREAK-BEFORE-MAKE | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 10pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD014PBF | Vishay Siliconix | $1.17 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd014pbf-datasheets-8969.pdf | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | Unknown | 200mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 310pF | 10 ns | 50ns | 50 ns | 13 ns | 1.7A | 20V | 60V | 4V | 1.3W Ta | 140 ns | 200mOhm | 60V | N-Channel | 310pF @ 25V | 200mOhm @ 1A, 10V | 4V @ 250μA | 1.7A Ta | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309AK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 16-DIP (0.300, 7.62mm) | 16 | 36V | 13V | 100Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | DUAL | 15V | 16 | 900mW | Multiplexer or Switches | +-15V | 22V | 7V | -15V | 4 | SEPARATE OUTPUT | 100Ohm | BREAK-BEFORE-MAKE | 200ns | NC | 1:1 | SPST - NC | ±15V | 1nA | 11pF 8pF | 200ns, 150ns | -10pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ14PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfz14pbf-datasheets-9763.pdf | 60V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 200mOhm | 3 | yes | EAR99 | No | 3 | 1 | Single | 36W | 1 | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 2V | 43W Tc | TO-220AB | 140 ns | 40A | 47 mJ | 60V | N-Channel | 300pF @ 25V | 4 V | 200m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 10V | ±20V |
