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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Reach Compliance Code | Number of Functions | Power Rating | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | On-State Resistance | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI6968BEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6968bedqt1e3-datasheets-5597.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | 22MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1W | GULL WING | 260 | SI6968 | 8 | Dual | 30 | 1W | 2 | FET General Purpose Powers | 150°C | 245 ns | 330ns | 330 ns | 860 ns | 5.2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 22m Ω @ 6.5A, 4.5V | 1.6V @ 250μA | 18nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG30N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg30n60ege3-datasheets-4581.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 17 Weeks | 38.000013g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2318DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2318dst1e3-datasheets-7122.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 45mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 150°C | 5 ns | 12ns | 12 ns | 20 ns | 3.9A | 20V | SILICON | SWITCHING | 3V | 750mW Ta | 3A | 40V | N-Channel | 540pF @ 20V | 3 V | 45m Ω @ 3.9A, 10V | 3V @ 250μA | 3A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD40N04-10A-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud40n0410ae3-datasheets-2968.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | 2 | 10mOhm | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 71W | 1 | FET General Purpose Power | 14 ns | 7.5ns | 14 ns | 30 ns | 40A | 20V | SILICON | DRAIN | 71W Tc | 40V | N-Channel | 1700pF @ 25V | 10m Ω @ 40A, 10V | 3V @ 250μA | 40A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL110TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irll110trpbf-datasheets-8859.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 3 | 8 Weeks | 250.212891mg | Unknown | 540mOhm | 4 | yes | EAR99 | AVALANCHE RATED | Tin | No | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | 150°C | R-PDSO-G3 | 9.3 ns | 47ns | 18 ns | 16 ns | 1.5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2W Ta 3.1W Tc | 50 mJ | 100V | N-Channel | 250pF @ 25V | 540m Ω @ 900mA, 5V | 2V @ 250μA | 1.5A Tc | 6.1nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP75P05-08-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sup75p0508e3-datasheets-3242.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 3 | Single | 30 | 250W | 1 | Other Transistors | Not Qualified | 13 ns | 140ns | 175 ns | 115 ns | -75A | 20V | SILICON | DRAIN | 55V | -2V | 3.7W Ta 250W Tc | TO-220AB | 240A | 0.008Ohm | 30V | P-Channel | 8500pF @ 25V | -2 V | 8m Ω @ 30A, 10V | 3V @ 250μA | 75A Tc | 225nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7852DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7852dpt1e3-datasheets-0287.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 16.5mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 17 ns | 11ns | 11 ns | 40 ns | 12.5A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 7.6A | 50A | 80V | N-Channel | 2 V | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 7.6A Ta | 41nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4038DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4038dyt1ge3-datasheets-9275.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 506.605978mg | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | 1 | 13 ns | 14ns | 10 ns | 14 ns | 42.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.5W Ta 7.8W Tc | 0.0024Ohm | 40V | N-Channel | 4070pF @ 20V | 2.4m Ω @ 15A, 10V | 2.1V @ 250μA | 42.5A Tc | 87nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4126DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si4126dyt1ge3-datasheets-1169.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 2.75mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 3.5W | 1 | FET General Purpose Power | 36 ns | 20ns | 24 ns | 53 ns | 39A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.5W Ta 7.8W Tc | 26.5A | 30V | N-Channel | 4405pF @ 15V | 2.75m Ω @ 15A, 10V | 2.5V @ 250μA | 39A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTX02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | Contains Lead | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P06-15L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0615lge3-datasheets-2069.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 12 Weeks | 1 | 136W | 175°C | TO-252, (D-Pak) | 15 ns | 112 ns | -50A | 20V | 60V | -1.5V | 136W Tc | 13.5mOhm | -60V | P-Channel | 5910pF @ 25V | 15.5mOhm @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4752DY-T1-GE3 | Vishay Siliconix | $1.82 |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4752dyt1ge3-datasheets-9507.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No SVHC | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 30 | 3W | 1 | 18 ns | 15ns | 8 ns | 25 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 3W Ta 6.25W Tc | 0.0055Ohm | 30V | N-Channel | 1700pF @ 15V | 5.5m Ω @ 10A, 10V | 2.2V @ 1mA | 25A Tc | 43nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4840BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4840bdyt1e3-datasheets-4670.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 9MOhm | 8 | yes | EAR99 | No | 19A | e3 | Matte Tin (Sn) | 40V | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Powers | 150°C | 10 ns | 15ns | 10 ns | 30 ns | 19A | 20V | SILICON | SWITCHING | 1V | 2.5W Ta 6W Tc | 40V | N-Channel | 2000pF @ 20V | 9m Ω @ 12.4A, 10V | 3V @ 250μA | 19A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD213 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 4-DIP (0.300, 7.62mm) | 3 | 639.990485mg | 4 | EAR99 | unknown | 1W | DUAL | 4 | 1 | Single | 1 | Not Qualified | R-PDIP-T3 | 450mA | SILICON | 250V | TO-250AA | N-Channel | 140pF @ 25V | 2 Ω @ 270mA, 10V | 4V @ 250μA | 450mA Ta | 8.2nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3440DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si3440dvt1ge3-datasheets-7527.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 375mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 6 | 1 | Single | 1.14W | 1 | 8 ns | 10ns | 15 ns | 20 ns | 1.5A | 20V | SILICON | SWITCHING | 150V | 4V | 1.14W Ta | N-Channel | 4 V | 375m Ω @ 1.5A, 10V | 4V @ 250μA | 1.2A Ta | 8nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA850DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia850djt1ge3-datasheets-9719.pdf | PowerPAK® SC-70-6 Dual | 6 | 6 | yes | EAR99 | No | e3 | MATTE TIN | C BEND | 260 | 6 | 40 | 7W | 1 | FET General Purpose Power | 10 ns | 15ns | 15 ns | 25 ns | 950mA | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.9W Ta 7W Tc | 0.95A | 190V | N-Channel | 90pF @ 100V | 3.8 Ω @ 360mA, 4.5V | 1.4V @ 250μA | 950mA Tc | 4.5nC @ 10V | Schottky Diode (Isolated) | 1.8V 4.5V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7848BDP-T1-GE3 | Vishay Siliconix | $0.29 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7848bdpt1e3-datasheets-4537.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 15ns | 10 ns | 30 ns | 47A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 3V | 4.2W Ta 36W Tc | 50A | N-Channel | 2000pF @ 20V | 9m Ω @ 16A, 10V | 3V @ 250μA | 47A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM50P10-42-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50p1042e3-datasheets-2049.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | SINGLE | GULL WING | 4 | 18.8W | 1 | R-PSSO-G2 | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | P-CHANNEL | 100V | 18.8W Ta 125W Tc | 40A | 0.042Ohm | 80 mJ | N-Channel | 4600pF @ 50V | 4.2m Ω @ 14A, 10V | 3V @ 250μA | 36A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7336ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7336adpt1e3-datasheets-8486.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 24 ns | 16ns | 32 ns | 90 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1V | 5.4W Ta | 70A | 0.003Ohm | 30V | N-Channel | 5600pF @ 15V | 1 V | 3m Ω @ 25A, 10V | 3V @ 250μA | 30A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8469DB-T2-E1 | Vishay Siliconix | $1.71 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8469dbt2e1-datasheets-2815.pdf | 4-UFBGA | Lead Free | 4 | 15 Weeks | 64mOhm | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | 780mW | 1 | Other Transistors | 15 ns | 22ns | 17 ns | 35 ns | 3.6A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 8V | 8V | 780mW Ta 1.8W Tc | P-Channel | 900pF @ 4V | 64m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 4.6A Ta | 17nC @ 4.5V | 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS407DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis407dnt1ge3-datasheets-2330.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | Unknown | 9.5mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.6W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 23 ns | 28ns | 38 ns | 92 ns | -25A | -8V | SILICON | DRAIN | SWITCHING | 20V | -1V | 3.6W Ta 33W Tc | 40A | 20 mJ | -20V | P-Channel | 2760pF @ 10V | 9.5m Ω @ 15.3A, 4.5V | 1V @ 250μA | 25A Tc | 93.8nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR864DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sir864dpt1ge3-datasheets-4722.pdf | PowerPAK® SO-8 | 5 | 13 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 40A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.2V | 5W Ta 54W Tc | 70A | 0.0036Ohm | 45 mJ | N-Channel | 2460pF @ 15V | 1.2 V | 3.6m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 65nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2302CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2302cdst1e3-datasheets-4810.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 57mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 710mW | 1 | FET General Purpose Powers | 150°C | 112pF | 8 ns | 7ns | 7 ns | 30 ns | 2.6A | 8V | SILICON | SWITCHING | 400mV | 710mW Ta | 20V | N-Channel | 57m Ω @ 3.6A, 4.5V | 850mV @ 250μA | 2.6A Ta | 5.5nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32419DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sip32419dnt1ge4-datasheets-4738.pdf | 10-VFDFN Exposed Pad | 3mm | 1mm | 3mm | Lead Free | 10 | 15 Weeks | 50.008559mg | 56mOhm | 10 | On/Off | 28V | unknown | 1 | 170μA | Power Good, Slew Rate Controlled, Status Flag | 1.42W | DUAL | NO LEAD | NOT SPECIFIED | 12V | 0.5mm | 6V | 1 | SPST | NOT SPECIFIED | 150°C | 3.5A | P-Channel | 6V~28V | 550 μs | 1 μs | 1 | 56mOhm | General Purpose | High Side | Current Limiting (Adjustable), Over Temperature, UVLO | Not Required | 56m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1013R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-si1013rt1ge3-datasheets-5895.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 1.2Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 150mW | 1 | Other Transistors | 5 ns | 9ns | 9 ns | 35 ns | -400mA | 6V | SILICON | SWITCHING | 20V | -450mV | 150mW Ta | -20V | P-Channel | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 350mA Ta | 1.5nC @ 4.5V | 1.8V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32452DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | MICRO FOOT® | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | 85°C | -40°C | Non-Inverting | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sip32453dbt2ge1-datasheets-8330.pdf | 4-UFBGA, CSPBGA | 800μm | 545μm | 800μm | Unknown | 2.5V | 900mV | 65mOhm | 4 | On/Off | No | 2.5V | 1.2A | 196mW | 2.5V | 196mW | SIP3245* | 4-WCSP (0.76x0.76) | 1.2A | 1.2A | N-Channel | 0.9V~2.5V | 1 μs | 1 μs | 1 | General Purpose | High Side | Reverse Current | 1.2A | Not Required | 54mOhm | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2308CDS-T1-GE3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2308cdst1ge3-datasheets-0234.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 10 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.6W Tc | 2.6A | 0.144Ohm | N-Channel | 105pF @ 30V | 144m Ω @ 1.9A, 10V | 3V @ 250μA | 2.6A Tc | 4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32455DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | MICRO FOOT® | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | 85°C | -40°C | Non-Inverting | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip32454dbt2ge1-datasheets-4013.pdf | 4-UFBGA, CSPBGA | 800μm | 545μm | 800μm | 20 Weeks | Unknown | 2.5V | 800mV | 35mOhm | 4 | On/Off | 2.5V | 1.2A | 196mW | Slew Rate Controlled | 2.5V | 196mW | SIP32455 | 4-WCSP (0.76x0.76) | N-Channel | 0.8V~2.5V | 1.2 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | 1.2A | Not Required | 28mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ250DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz250dtt1ge3-datasheets-1886.pdf | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) | 60V | 4.3W Ta 33W Tc | 2 N-Channel (Dual) | 840pF 790pF @ 30V | 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V | 2.4V @ 250μA | 14A Ta 38A Tc | 21nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1865DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1865dlt1e3-datasheets-2129.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | On/Off | yes | ESD PROTECTION | No | e3 | Slew Rate Controlled | PURE MATTE TIN | DUAL | GULL WING | 260 | SI1865 | 6 | 30 | 2 | P-Channel | 1.8V~8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1 | General Purpose | High Side | 1.2A | 180m Ω | 1:1 |
