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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Max Frequency | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Output Voltage | Output Current | Output Type | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Output Configuration | Power - Max | Input Voltage-Nom | Input Voltage (Min) | Input Voltage (Max) | Topology | Synchronous Rectifier | Max Duty Cycle | Duty Cycle | Number of Inputs | Output | Control Mode | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Control Features | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI9111DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BCDMOS | ROHS3 Compliant | /files/vishaysiliconix-si9110dje3-datasheets-9756.pdf | 14-SOIC (0.154, 3.90mm Width) | 8.65mm | 3.9mm | 14 | 338.011364mg | 14 | yes | EAR99 | 3MHz | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | SI9111 | SWITCHING CONTROLLER | 40 | Switching Regulator or Controllers | 9.7V | 10mA | Transistor Driver | 40ns | 40 ns | Step-Up/Step-Down | 1 | Positive | 48V | Cuk, Flyback, Forward Converter, Push-Pull | No | 50 % | 50 % | CURRENT-MODE | PULSE WIDTH MODULATION | SINGLE | Enable, Reset | 9.5V~13.5V | 40kHz~1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1972DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1972dht1e3-datasheets-4344.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | Unknown | 190mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 740mW | GULL WING | 260 | SI1972 | 6 | Dual | 40 | 740mW | 2 | FET General Purpose Power | 5 ns | 10ns | 10 ns | 10 ns | 1.3A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.8V | 1.25W | 2 N-Channel (Dual) | 75pF @ 15V | 2.8 V | 225m Ω @ 1.3A, 10V | 2.8V @ 250μA | 2.8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1412EEN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.95mm | ROHS3 Compliant | /files/vishaysiliconix-dg1412eent1ge4-datasheets-9047.pdf | 16-VFQFN Exposed Pad | 16 | 16 Weeks | unknown | 4 | YES | QUAD | NO LEAD | 0.65mm | 1 | 0.29mA | 4 | S-XQCC-N16 | 150MHz | 15.3V | 1.5Ohm | 78 dB | 0.04Ohm | BREAK-BEFORE-MAKE | 280ns | NO | 4.5V~24V ±4.5V~15V | 0.25A | 1:1 | SPST - NO | 500pA | 24pF 23pF | 140ns, 110ns | -41pC | 40m Ω | -104dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9934BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9934bdyt1e3-datasheets-4798.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | No SVHC | 35mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI9934 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 19 ns | 35ns | 35 ns | 80 ns | -6.4A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | -1.4V | -12V | 2 P-Channel (Dual) | 35m Ω @ 6.4A, 4.5V | 1.4V @ 250μA | 4.8A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LEDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg412ledyt1ge3-datasheets-1089.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | 16 | 18 Weeks | 26Ohm | 16 | 4 | Pure Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 1.27mm | 1 | NOT SPECIFIED | 4 | -5V | 26Ohm | 68 dB | 60ns | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 50ns, 30ns | 6.6pC | -114dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7940DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7940dpt1ge3-datasheets-5439.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.4W | C BEND | 260 | SI7940 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 30 ns | 50ns | 50 ns | 60 ns | 11.8A | 8V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 7.6A | 0.017Ohm | 12V | 2 N-Channel (Dual) | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 7.6A | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG303BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 230μA | 5.08mm | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-DIP (0.300, 7.62mm) | 15V | Lead Free | 1mA | 14 | 12 Weeks | 1.620005g | Unknown | 36V | 13V | 50Ohm | 14 | yes | No | 2 | 230μA | e3 | Matte Tin (Sn) | 470mW | 15V | DG303 | 14 | 1 | 470mW | Multiplexer or Switches | 2 | DPST, SPDT | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | 30Ohm | 62 dB | BREAK-BEFORE-MAKE | 2:1 | DPST - NO/NC | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6925ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6925adqt1e3-datasheets-4680.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | 800mW | GULL WING | 260 | SI6925 | 8 | Dual | 40 | 800mW | 2 | FET General Purpose Powers | 40 ns | 50ns | 50 ns | 20 ns | 3.9A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.3A | 0.045Ohm | 20V | 2 N-Channel (Dual) | 1.8 V | 45m Ω @ 3.9A, 4.5V | 1.8V @ 250μA | 3.3A | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1412EEQ-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.2mm | ROHS3 Compliant | /files/vishaysiliconix-dg1412eent1ge4-datasheets-9047.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | unknown | 4 | YES | DUAL | GULL WING | 5V | 0.65mm | 1 | 4 | R-PDSO-G16 | 150MHz | -5V | -16.5V | 16.5V | 1.5Ohm | 78 dB | 0.04Ohm | BREAK-BEFORE-MAKE | 280ns | NO | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO | 500pA | 24pF 23pF | 140ns, 110ns | -41pC | 40m Ω | -104dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3948DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3948dvt1e3-datasheets-4388.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 21 Weeks | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.15W | GULL WING | 260 | SI3948 | 6 | Dual | 30 | 1.15W | 2 | FET General Purpose Powers | 7 ns | 5 ns | 13 ns | 2.5A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.105Ohm | 30V | 2 N-Channel (Dual) | 105m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 3.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4157EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg4157edlt1ge3-datasheets-5824.pdf | 6-TSSOP, SC-88, SOT-363 | 17 Weeks | 1 | SC-70-6 | 152MHz | 1.2Ohm | 2:1 | 1.65V~5.5V | SPDT | 3nA | 32ns, 28ns | -5pC | 120mOhm (Max) | -41dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6975DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6975dqt1ge3-datasheets-9753.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 21 Weeks | 157.991892mg | 8 | 830mW | 2 | Dual | 830mW | 8-TSSOP | 25 ns | 32ns | 32 ns | 96 ns | 4.3A | 8V | 12V | 830mW | 27mOhm | -12V | 2 P-Channel (Dual) | 27mOhm @ 5.1A, 4.5V | 450mV @ 5mA (Min) | 4.3A | 30nC @ 4.5V | Logic Level Gate | 27 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442BDN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg442bdyt1e3-datasheets-1247.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 12 Weeks | 57.09594mg | 25V | 13V | 90Ohm | 16 | yes | unknown | 4 | e4 | PALLADIUM GOLD OVER NICKEL | 850mW | QUAD | NO LEAD | 260 | 15V | 0.65mm | DG442 | 16 | 1 | 30 | 850mW | Multiplexer or Switches | Not Qualified | SPST | 220 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 2 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1563DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1563dht1e3-datasheets-4306.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | No | 570mW | SI1563 | 570mW | 2 | SC-70-6 (SOT-363) | 12 ns | 1.13A | 8V | 20V | 570mW | N and P-Channel | 280mOhm @ 1.13A, 4.5V | 1V @ 100μA | 1.13A 880mA | 2nC @ 4.5V | Logic Level Gate | 280 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG303BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 230μA | 1.75mm | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-SOIC (0.154, 3.90mm Width) | 8.65mm | 3.9mm | 15V | Lead Free | 1mA | 14 | 12 Weeks | Unknown | 36V | 13V | 30Ohm | 14 | yes | 2 | 230μA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG303 | 14 | 1 | 30 | 600mW | Multiplexer or Switches | 2 | Not Qualified | DPST, SPDT | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 50Ohm | 50Ohm | 62 dB | BREAK-BEFORE-MAKE | 2:1 | DPST - NO/NC | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4670DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4670dyt1ge3-datasheets-9495.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.8W | GULL WING | 260 | SI4670 | 8 | 2 | 30 | 2 | 15 ns | 50ns | 50 ns | 20 ns | 7A | 16V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 7A | 2 N-Channel (Dual) | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 8A | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 50μA | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 50μA | 16 | 12 Weeks | 1.627801g | Unknown | 25V | 4.5V | 85Ohm | 16 | yes | No | 4 | 100μA | e3 | Matte Tin (Sn) | Inverting | 470mW | 260 | 15V | DG201 | 16 | 1 | 40 | 470mW | Multiplexer or Switches | 12/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 30mA | 4 | 85Ohm | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7946DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7946dpt1e3-datasheets-4796.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE MATTE TIN | 1.4W | C BEND | 260 | SI7946 | 8 | Dual | 30 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 11 ns | 15ns | 20 ns | 30 ns | 2.1A | 20V | SILICON | DRAIN | SWITCHING | 150V | METAL-OXIDE SEMICONDUCTOR | 10A | 0.15Ohm | 4 mJ | 150V | 2 N-Channel (Dual) | 150m Ω @ 3.3A, 10V | 4V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 15μA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg441dje3-datasheets-4856.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 100μA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 13V | 85Ohm | 16 | yes | No | 4 | 15μA | e3 | Matte Tin (Sn) | 44V | 900mW | GULL WING | 260 | 15V | 1.27mm | DG441 | 16 | 1 | 30 | 900mW | Multiplexer or Switches | SPST | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 60 dB | 4Ohm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4542DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4542dyt1ge3-datasheets-2215.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | unknown | PURE MATTE TIN (SN) | 2W | GULL WING | 260 | SI4542 | 8 | Dual | 30 | 2W | 2 | Other Transistors | Not Qualified | 10ns | 6.9A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 40A | 30V | N and P-Channel | 25m Ω @ 6.9A, 10V | 1V @ 250μA (Min) | 50nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 15μA | ROHS3 Compliant | /files/vishaysiliconix-dg441dje3-datasheets-4856.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 100μA | 16 | 12 Weeks | 1.627801g | Unknown | 36V | 13V | 85Ohm | 16 | yes | No | 4 | 15μA | e3 | Matte Tin (Sn) | 450mW | 15V | DG442 | 16 | 1 | 450mW | Multiplexer or Switches | SPST | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 60 dB | 4Ohm | BREAK-BEFORE-MAKE | 210ns | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | 4 Ω (Max) | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4804BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4804bdyt1e3-datasheets-4501.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4804 | 8 | 2 | Dual | 30 | 2 | 9 ns | 10ns | 9 ns | 19 ns | 5.7A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 3V @ 250μA | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9232EDY-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1.75mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg9233edyge3-datasheets-1801.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 4mm | 8 | 21 Weeks | 2 | YES | DUAL | GULL WING | NOT SPECIFIED | 3V | 5.5V | 1 | NOT SPECIFIED | 2 | R-PDSO-G8 | 25Ohm | 1:1 | 2.7V~5.5V | SPST - NC | 100pA | 3.8pF | 75ns, 50ns | -0.78pC | 400m Ω | -108dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4814BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4814bdyt1e3-datasheets-2253.pdf | 8-SOIC (0.154, 3.90mm Width) | 186.993455mg | 8 | No | 3.5W | 2 | 2 | 8-SO | 10.5A | 20V | 30V | 3.3W 3.5W | 18mOhm | 2 N-Channel (Half Bridge) | 18mOhm @ 10A, 10V | 3V @ 250μA | 10A 10.5A | 10nC @ 4.5V | Logic Level Gate | 18 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG213DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 1.75mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg213dye3-datasheets-4404.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | Lead Free | 5μA | 16 | 13 Weeks | 40V | 3V | 110Ohm | 16 | yes | No | 4 | 5μA | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG213 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 512/+-15V | SPST | 130 ns | 100 ns | 22V | Dual, Single | 3V | -15V | 4 | SEPARATE OUTPUT | 60Ohm | 60Ohm | 90 dB | 1Ohm | BREAK-BEFORE-MAKE | 3V~40V ±3V~22V | 1:1 | SPST - NO/NC | 500pA | 5pF 5pF | 130ns, 100ns | 1pC | 1 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4966DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4966dyt1ge3-datasheets-2310.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | No | 2W | SI4966 | 2 | Dual | 2W | 2 | 8-SO | 40 ns | 40ns | 40 ns | 90 ns | 7.1A | 12V | 20V | 2W | 25mOhm | 2 N-Channel (Dual) | 25mOhm @ 7.1A, 4.5V | 1.5V @ 250μA | 50nC @ 4.5V | Logic Level Gate | 25 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG507BEQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg507bewt1ge3-datasheets-3635.pdf | 28-TSSOP (0.173, 4.40mm Width) | 9.7mm | Lead Free | 28 | 15 Weeks | 402.988471mg | Unknown | 20V | 5V | 450Ohm | 28 | yes | No | 1 | 5μA | GULL WING | 260 | 15V | 0.65mm | DG507 | 28 | 8 | 40 | 0.1mA | 2 | 217MHz | 20V | Multiplexer | Dual, Single | 5V | -15V | 300Ohm | 84 dB | 10Ohm | BREAK-BEFORE-MAKE | 310ns | 12V ±5V~20V | 0.03A | 8:1 | 1nA | 3pF 17pF | 250ns, 200ns | 1pC | 10 Ω | -84dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5915DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5915dct1e3-datasheets-2322.pdf | 8-SMD, Flat Lead | 1.1W | SI5915 | 1206-8 ChipFET™ | 3.4A | 8V | 1.1W | 2 P-Channel (Dual) | 70mOhm @ 3.4A, 4.5V | 450mV @ 250μA (Min) | 3.4A | 9nC @ 4.5V | Logic Level Gate | 70 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3535DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg3536dbt5e1-datasheets-8351.pdf | 10-WFBGA | 1μA | 15 Weeks | 6V | 1.8V | 400mOhm | 10 | No | 1nA | 457mW | DG3535 | 2 | 10-Micro Foot® (2x1.5) | SPDT | 82 ns | 73 ns | Single | 400mOhm | 2:1 | 2.7V~3.3V | SPDT | 2nA | 145pF | 82ns, 73ns | 21pC | 50mOhm (Max) | -69dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6969BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6969bdqt1e3-datasheets-4682.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 30mOhm | 8 | 830mW | SI6969 | 2 | Dual | 8-TSSOP | 20 ns | 35ns | 35 ns | 110 ns | -4.6A | 8V | 12V | 830mW | 30mOhm | -12V | 2 P-Channel (Dual) | 30mOhm @ 4.6A, 4.5V | 800mV @ 250μA | 4A | 25nC @ 4.5V | Logic Level Gate | 30 mΩ |
