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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Output Voltage | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Input Voltage-Nom | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUD50N03-16P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0316pe3-datasheets-3289.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 16mOhm | 1 | Single | 15A | 20V | 30V | 6.5W Ta 40.8W Tc | N-Channel | 1150pF @ 25V | 16m Ω @ 15A, 10V | 3V @ 250μA | 13nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4946BEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4946beyt1e3-datasheets-5417.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 41MOhm | 8 | EAR99 | No | e3 | MATTE TIN | 3.7W | GULL WING | 260 | SI4946 | 8 | Dual | 30 | 2.4W | 2 | 10 ns | 12ns | 10 ns | 25 ns | 5.3A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 2.4V | 30A | 60V | 2 N-Channel (Dual) | 840pF @ 30V | 41m Ω @ 5.3A, 10V | 3V @ 250μA | 6.5A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP40N10-30-GE3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 | 3 | 3 | EAR99 | No | SINGLE | 3 | 1 | 11 ns | 12ns | 12 ns | 30 ns | 38.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 3.1W Ta 89W Tc | TO-220AB | 75A | 61 mJ | N-Channel | 2400pF @ 25V | 30m Ω @ 15A, 10V | 4V @ 250μA | 38.5A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9926CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9926cdyt1e3-datasheets-1229.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.1W | GULL WING | 260 | SI9926 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | 150°C | 15 ns | 12ns | 10 ns | 35 ns | 8A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 8A | 20V | 2 N-Channel (Dual) | 1200pF @ 10V | 18m Ω @ 8.3A, 4.5V | 1.5V @ 250μA | 33nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N04-03-E3 | Vishay Siliconix | $2.25 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0403e3-datasheets-5402.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 437.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 170ns | 110 ns | 55 ns | 110A | 20V | 40V | SILICON | SWITCHING | 4V | 3.75W Ta 375W Tc | 60 ns | 440A | 0.0028Ohm | 40V | N-Channel | 8250pF @ 25V | 4 V | 2.8m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2309CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2309cdst1ge3-datasheets-7356.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 345mOhm | 3 | EAR99 | No | 12A | e3 | Matte Tin (Sn) | 60V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.7W | 1 | Other Transistors | 40 ns | 35ns | 35 ns | 15 ns | 1.2A | 20V | SILICON | SWITCHING | -1V | 1W Ta 1.7W Tc | -60V | P-Channel | 210pF @ 30V | 345m Ω @ 1.25A, 10V | 3V @ 250μA | 1.6A Tc | 4.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-09P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud50n0309pge3-datasheets-3255.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 1.437803g | 9.5MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 7.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 15ns | 8 ns | 22 ns | 63A | 20V | SILICON | DRAIN | SWITCHING | 7.5W Ta 65.2W Tc | 50A | 50A | 30V | N-Channel | 2200pF @ 25V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 63A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1469DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1469dht1e3-datasheets-7724.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 80mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 5 ns | 20ns | 9 ns | 22 ns | 1.6A | 12V | SILICON | SWITCHING | 20V | -1.5V | 1.5W Ta 2.78W Tc | 3.2A | 8A | -20V | P-Channel | 470pF @ 10V | 80m Ω @ 2A, 10V | 1.5V @ 250μA | 2.7A Tc | 8.5nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1405DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1405dlt1ge3-datasheets-6027.pdf | 6-TSSOP, SC-88, SOT-363 | 2.3876mm | 990.6μm | 1.3462mm | Lead Free | 125mOhm | 6 | No | Single | 568mW | SC-70-6 (SOT-363) | 8 ns | 36ns | 36 ns | 33 ns | 1.6A | 8V | 8V | 568mW Ta | 210mOhm | 8V | P-Channel | 125mOhm @ 1.8A, 4.5V | 450mV @ 250μA (Min) | 1.6A Ta | 7nC @ 4.5V | 54 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD210PBF | Vishay Siliconix | $1.21 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd210pbf-datasheets-0562.pdf | 200V | 600mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 4 | 8 Weeks | Unknown | 1.5Ohm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | 1 | Single | 1W | 1 | FET General Purpose Power | R-PDIP-T3 | 8.2 ns | 17ns | 17 ns | 14 ns | 600mA | 20V | SILICON | DRAIN | SWITCHING | 4V | 1W Ta | 0.6A | 200V | N-Channel | 140pF @ 25V | 1.5 Ω @ 360mA, 10V | 4V @ 250μA | 600mA Ta | 8.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3N163-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | 4 | EAR99 | Lead, Tin | unknown | 8541.21.00.95 | BOTTOM | WIRE | 1 | Not Qualified | O-MBCY-W4 | 5 ns | 13ns | 25 ns | 50mA | 30V | SILICON | SINGLE | SUBSTRATE | 40V | 40V | 375mW Ta | 0.05A | 300Ohm | 0.7 pF | P-Channel | 3.5pF @ 15V | 250 Ω @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40P10-40L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40p1040lge3-datasheets-1274.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 12 Weeks | 1 | 136W | 175°C | TO-252AA | 11 ns | 78 ns | -38A | 20V | 100V | 136W Tc | 33mOhm | -100V | P-Channel | 5540pF @ 15V | 40mOhm @ 8.2A, 10V | 2.5V @ 250μA | 38A Tc | 144nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3N163-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-3n1632-datasheets-9363.pdf | TO-206AF, TO-72-4 Metal Can | Lead Free | Unknown | 250Ohm | 4 | Tin | No | 1 | Single | 375mW | TO-72 | 3.5pF | 5 ns | 13ns | 25 ns | -50mA | 30V | 40V | -2.5V | 375mW Ta | 250Ohm | -40V | P-Channel | 3.5pF @ 15V | -2.5 V | 250Ohm @ 100μA, 20V | 5V @ 10μA | 50mA Ta | 250 Ω | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD19N20-90-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud19n2090e3-datasheets-2162.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 90mOhm | 3 | yes | EAR99 | Tin | No | 19A | e3 | 200V | GULL WING | 260 | 4 | 1 | Single | 30 | 3W | 1 | FET General Purpose Powers | R-PSSO-G2 | 15 ns | 50ns | 60 ns | 30 ns | 19A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 3W Ta 136W Tc | 200V | N-Channel | 1800pF @ 25V | 4 V | 90m Ω @ 5A, 10V | 4V @ 250μA | 19A Tc | 51nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS38N60L | Vishay Siliconix | $75.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps38n60lpbf-datasheets-4956.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | 3 | No | 1 | Single | SUPER-247™ (TO-274AA) | 7.99nF | 44 ns | 130ns | 69 ns | 92 ns | 38A | 30V | 600V | 540W Tc | 150mOhm | 600V | N-Channel | 7990pF @ 25V | 150mOhm @ 23A, 10V | 5V @ 250μA | 38A Tc | 320nC @ 10V | 150 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7157DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7157dpt1ge3-datasheets-4683.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 6.25W | 1 | R-PDSO-C5 | 20 ns | 14ns | 55 ns | 220 ns | -60A | 12V | SILICON | DRAIN | SWITCHING | 20V | -1.4V | 6.25W Ta 104W Tc | 300A | -20V | P-Channel | 22000pF @ 10V | 1.6m Ω @ 25A, 10V | 1.4V @ 250μA | 60A Tc | 625nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA34DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira34dpt1ge3-datasheets-0575.pdf | PowerPAK® SO-8 | 5 | 22 Weeks | 506.605978mg | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.3W | 1 | FET General Purpose Power | R-PDSO-C5 | 11 ns | 11ns | 6 ns | 19 ns | 40A | -16V | SILICON | DRAIN | SWITCHING | 3.3W Ta 31.25W Tc | 0.0067Ohm | 5 mJ | 30V | N-Channel | 1100pF @ 15V | 6.7m Ω @ 10A, 10V | 2.4V @ 250μA | 40A Tc | 25nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRC16DP-T1-GE3 | Vishay Siliconix | $2.40 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sirc16dpt1ge3-datasheets-6826.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 25V | 54.3W Tc | N-Channel | 5150pF @ 10V | 0.96m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 48nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1406DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1406dht1ge3-datasheets-1976.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | Unknown | 65mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 1W | 1 | FET General Purpose Powers | 155pF | 27 ns | 47ns | 29 ns | 54 ns | 3.1A | 8V | SILICON | SWITCHING | 450mV | 1W Ta | 20V | N-Channel | 450 mV | 65m Ω @ 3.9A, 4.5V | 1.2V @ 250μA | 3.1A Ta | 7.5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7818DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7818dnt1e3-datasheets-8452.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 135mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | R-XDSO-C5 | 10 ns | 10ns | 10 ns | 25 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 150V | 4V | 1.5W Ta | 2.2A | 4 mJ | N-Channel | 135m Ω @ 3.4A, 10V | 4V @ 250μA | 2.2A Ta | 30nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-12P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0312pge3-datasheets-2078.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | Tin | 1 | Single | TO-252 | 1.6nF | 9 ns | 15ns | 12 ns | 20 ns | 17.5A | 20V | 30V | 39W Tc | 12mOhm | 30V | N-Channel | 1600pF @ 25V | 17mOhm @ 20A, 10V | 3V @ 250μA | 16.8A Ta | 42nC @ 10V | 17 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ431EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj431ept1ge3-datasheets-9445.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 200V | 83W Tc | 178mOhm | P-Channel | 4355pF @ 25V | 213mOhm @ 1A, 4V | 3.5V @ 250μA | 12A Tc | 160nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1428EDH-T1-GE3 | Vishay Siliconix | $25.94 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1428edht1ge3-datasheets-3524.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | EAR99 | unknown | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | 4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | 2.8W Tc | 4A | 0.045Ohm | N-Channel | 45m Ω @ 3.7A, 10V | 1.3V @ 250μA | 4A Tc | 13.5nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS410DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis410dnt1ge3-datasheets-2517.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 4.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 8 | Single | 5.2W | 1 | FET General Purpose Power | S-PDSO-C5 | 25 ns | 15ns | 15 ns | 30 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.8W Ta 52W Tc | 22A | 60A | N-Channel | 1600pF @ 10V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7794DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® Gen III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7794dpt1ge3-datasheets-5030.pdf | PowerPAK® SO-8 | 5 | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 5W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 10ns | 10 ns | 30 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 5W Ta 48W Tc | 0.0034Ohm | N-Channel | 2.52nF @ 15V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 28.6A Ta 60A Tc | 72nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1012CR-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1012crt1ge3-datasheets-5114.pdf | SC-75, SOT-416 | 1.68mm | 800μm | 860μm | Lead Free | 3 | 14 Weeks | 2.012816mg | No SVHC | 396mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 240mW | 1 | 150°C | 11 ns | 16ns | 11 ns | 26 ns | 630mA | 8V | SILICON | SWITCHING | 400mV | 240mW Ta | 20V | N-Channel | 43pF @ 10V | 396m Ω @ 600mA, 4.5V | 1V @ 250μA | 2nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32416DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sip32416dnpt1ge4-datasheets-6370.pdf | 8-UFDFN Exposed Pad | 8 | 14 Weeks | 50.008559mg | Unknown | 76mOhm | 8 | On/Off | EAR99 | 5.5V | 1 | Load Discharge, Slew Rate Controlled | 580mW | DUAL | NO LEAD | NOT SPECIFIED | 0.5mm | SIP32416 | 8 | DUAL SWITCHING CONTROLLER | NOT SPECIFIED | 580mW | 2.4A | 5V | 2A | N-Channel | 1.1V~5.5V | 3.8 ms | 1 μs | 2 | General Purpose | High Side | Reverse Current | 5V | Not Required | 62m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2312BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2312bdst1e3-datasheets-6507.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 31mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 9 ns | 30ns | 10 ns | 35 ns | 5A | 8V | 20V | SILICON | SWITCHING | 850mV | 750mW Ta | 20V | N-Channel | 450 mV | 31m Ω @ 5A, 4.5V | 850mV @ 250μA | 3.9A Ta | 12nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32441DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | Non-RoHS Compliant | /files/vishaysiliconix-sip32441dnpt1ge4-datasheets-4020.pdf | 4-UDFN Exposed Pad | 16 Weeks | On/Off | EAR99 | unknown | e4 | Slew Rate Controlled | Palladium/Gold (Pd/Au) | 260 | 30 | N-Channel | 1.7V~5.5V | 1 | General Purpose | High Side | Reverse Current, UVLO | 3A | Not Required | 38m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0610K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-tp0610kt1e3-datasheets-5432.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 1.437803g | Unknown | 3 | No | 1 | Single | 350mW | 1 | SOT-23-3 (TO-236) | 155pF | 20 ns | 35 ns | -185mA | 20V | 60V | -2V | 350mW Ta | 10Ohm | -60V | P-Channel | 23pF @ 25V | -1 V | 6Ohm @ 500mA, 10V | 3V @ 250μA | 185mA Ta | 1.7nC @ 15V | 190 mΩ | 4.5V 10V | ±20V |
