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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7810DN-T1-GE3 | Vishay Siliconix | $1.18 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7810dnt1e3-datasheets-3656.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 8 | 1 | Single | 1.5W | 1 | FET General Purpose Powers | S-PDSO-C5 | 10 ns | 15ns | 15 ns | 20 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 20A | 0.062Ohm | 100V | N-Channel | 62m Ω @ 5.4A, 10V | 4.5V @ 250μA | 3.4A Ta | 17nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQJA20EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja20ept1ge3-datasheets-8593.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | 1 | 68W | 175°C | PowerPAK® SO-8 | 14 ns | 27 ns | 22.5A | 20V | 200V | 68W Tc | 41mOhm | 200V | N-Channel | 1300pF @ 25V | 50mOhm @ 10A, 10V | 3.5V @ 250μA | 22.5A Tc | 27nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N06-09L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50n0609le3-datasheets-5807.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 9.3mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 100W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 10 ns | 15ns | 20 ns | 35 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2V | 3W Ta 136W Tc | TO-252AA | 60V | N-Channel | 2650pF @ 25V | 2 V | 9.3m Ω @ 20A, 10V | 3V @ 250μA | 50A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIJA58DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sija58dpt1ge3-datasheets-0836.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 4.1W | 175°C | 10 ns | 28 ns | 29.3A | 27.7W Tc | 40V | N-Channel | 3750pF @ 20V | 2.65m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N03-1M5L_GE3 | Vishay Siliconix | $1.24 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n031m5lge3-datasheets-6370.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 1.946308g | Unknown | 3 | No | 1 | Single | 375W | 1 | TO-263 | 15.605nF | 18 ns | 11ns | 11 ns | 64 ns | 120A | 20V | 30V | 2V | 375W Tc | 1.5mOhm | 30V | N-Channel | 15605pF @ 15V | 1.5mOhm @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 270nC @ 10V | 1.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4848DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4848dyt1e3-datasheets-7754.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 85mOhm | 8 | yes | EAR99 | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | 9 ns | 10ns | 17 ns | 24 ns | 2.7A | 20V | SILICON | 2V | 1.5W Ta | 150V | N-Channel | 85m Ω @ 3.5A, 10V | 2V @ 250μA (Min) | 2.7A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFBE30STRLPBF | Vishay Siliconix | $2.65 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8 Weeks | 3 | No | 125W | 1 | D2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2348ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq2348est1ge3-datasheets-0805.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 3W Tc | TO-236AB | 8A | 0.024Ohm | 50 pF | N-Channel | 540pF @ 15V | 24m Ω @ 12A, 10V | 2.5V @ 250μA | 8A Tc | 14.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQA410EJ-T1_GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa410ejt1ge3-datasheets-2530.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 20V | 13.6W Tc | N-Channel | 485pF @ 10V | 28mOhm @ 5A, 4.5V | 1.1V @ 250μA | 7.8A Tc | 8nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR640ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir640adpt1ge3-datasheets-3002.pdf | PowerPAK® SO-8 | 6.15mm | 1.04mm | 5.15mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | DUAL | FLAT | 260 | 1 | Single | 30 | 6.25W | 1 | R-PDSO-F5 | 38 ns | 70ns | 12 ns | 42 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2V | 6.25W Ta 104W Tc | 350A | 0.0025Ohm | 40V | N-Channel | 4240pF @ 20V | 2m Ω @ 20A, 10V | 2V @ 250μA | 41.6A Ta 100A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI7858ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7858adpt1ge3-datasheets-0758.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 2.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 40 ns | 40ns | 70 ns | 140 ns | 29A | 8V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 20A | 60A | 12V | N-Channel | 5700pF @ 6V | 2.6m Ω @ 29A, 4.5V | 1.5V @ 250μA | 20A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI7611DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7611dnt1ge3-datasheets-7908.pdf | PowerPAK® 1212-8 | 3.05mm | 1.17mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.7W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 10 ns | 11ns | 9 ns | 30 ns | -18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -1V | 3.7W Ta 39W Tc | 9.3A | 20A | 26 mJ | -40V | P-Channel | 1980pF @ 20V | -3 V | 25m Ω @ 9.3A, 10V | 3V @ 250μA | 18A Tc | 62nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SISA96DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sisa96dnt1ge3-datasheets-9179.pdf | PowerPAK® 1212-8 | 1.17mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.5W | 150°C | 8 ns | 13 ns | 14.8A | 26.5W Tc | 30V | N-Channel | 1385pF @ 15V | 8.8m Ω @ 10A, 10V | 2.2V @ 250μA | 16A Tc | 15nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8439DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8439dbt1e1-datasheets-9962.pdf | 4-UFBGA | 4 | 13 Weeks | No SVHC | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | Single | 1 | 30 ns | 25ns | 210 ns | 330 ns | -9.2A | -800mV | SILICON | SWITCHING | 8V | -400mV | 1.1W Ta 2.7W Tc | 0.025Ohm | -8V | P-Channel | 25m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 50nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF644PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf644pbf-datasheets-1274.pdf | 250V | 14A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | 250V | 4V | 125W Tc | 500 ns | 280mOhm | 250V | N-Channel | 1300pF @ 25V | 4 V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFB11N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfb11n50apbf-datasheets-1825.pdf | 500V | 11A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 520mOhm | 3 | No | 1 | Single | 170W | 1 | TO-220AB | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 4V | 170W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 4 V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRLR014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | Unknown | 200mOhm | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | R-PSSO-G2 | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 25W Tc | 27.4 mJ | 60V | N-Channel | 400pF @ 25V | 2 V | 200m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||
| IRF630SPBF | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf630spbf-datasheets-3326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 400MOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK (TO-263) | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 4V | 3W Ta 74W Tc | 400mOhm | N-Channel | 800pF @ 25V | 4 V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFI510GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irfi510gpbf-datasheets-3853.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | No SVHC | 3 | No | 1 | Single | 27W | 1 | TO-220-3 | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.5A | 20V | 100V | 4V | 27W Tc | 540mOhm | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SQM40016EM_GE3 | Vishay Siliconix | $2.62 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40016emge3-datasheets-4412.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 14 Weeks | TO-263-7 | 40V | 300W Tc | N-Channel | 15000pF @ 25V | 1mOhm @ 40A, 10V | 3.5V @ 250μA | 250A Tc | 245nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP7N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp7n60ege3-datasheets-4865.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 78W | 1 | FET General Purpose Powers | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | SILICON | SWITCHING | 2V | 78W Tc | TO-220AB | 7A | 0.6Ohm | 600V | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHA15N50E-E3 | Vishay Siliconix | $1.83 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha15n50ee3-datasheets-5196.pdf | TO-220-3 Full Pack | 3 | 14 Weeks | 6.000006g | Unknown | 243mOhm | 3 | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 14.5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 4V | 33W Tc | TO-220AB | 28A | N-Channel | 1162pF @ 100V | 280m Ω @ 7.5A, 10V | 4V @ 250μA | 14.5A Tc | 66nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHP11N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihp11n80ege3-datasheets-5529.pdf | TO-220-3 | 18 Weeks | 800V | 179W Tc | N-Channel | 1670pF @ 100V | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf840lcpbf-datasheets-8729.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 850mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 500V | 4V | 125W Tc | 740 ns | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SI3493BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3493bdvt1e3-datasheets-9093.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 27.5mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2.08W | 1 | Other Transistors | 22 ns | 72ns | 84 ns | 75 ns | 7A | 8V | SILICON | SWITCHING | 20V | 2.08W Ta 2.97W Tc | 8A | -20V | P-Channel | 1805pF @ 10V | 27.5m Ω @ 7A, 4.5V | 900mV @ 250μA | 8A Tc | 43.5nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| IRF520SPBF | Vishay Siliconix | $1.06 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | No | D2PAK | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 9.2A | 20V | 100V | 3.7W Ta 60W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD690N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd690n60ege3-datasheets-1596.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 62.5W Tc | N-Channel | 347pF @ 100V | 700mOhm @ 2A, 10V | 5V @ 250μA | 6.4A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60efge3-datasheets-1996.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | D2PAK (TO-263) | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS406DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis406dnt1ge3-datasheets-2843.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 20 ns | 12ns | 12 ns | 25 ns | 9A | 25V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 9A | 50A | 20 mJ | 30V | N-Channel | 1100pF @ 15V | 11m Ω @ 12A, 10V | 3V @ 250μA | 9A Ta | 28nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||
| SQJ474EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj474ept1ge3-datasheets-3703.pdf | PowerPAK® SO-8 | Lead Free | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 45W Tc | 26A | 65A | 0.03Ohm | 24 mJ | N-Channel | 1100pF @ 25V | 30m Ω @ 10A, 10V | 2.5V @ 250μA | 26A Tc | 30nC @ 10V | 4.5V 10V | ±20V |
