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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | JESD-609 Code | Feature | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Max Output Current | Output Voltage | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Input Voltage-Nom | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Output Current per Channel | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Typ) | Ratio - Input:Output | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI8805EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8805edbt2e1-datasheets-6973.pdf | 4-XFBGA | 4 | 15 Weeks | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | Single | 500mW | 1 | Other Transistors | 13 ns | 13ns | 17 ns | 25 ns | -3.1A | 5V | SILICON | SWITCHING | 8V | 8V | 500mW Ta | 0.088Ohm | P-Channel | 68m Ω @ 1.5A, 4.5V | 700mV @ 250μA | 10nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA427DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sia427djt1ge3-datasheets-7386.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 4 | 14 Weeks | Unknown | 13mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-PDSO-N4 | 20 ns | 20ns | 40 ns | 70 ns | 12A | 5V | SILICON | DRAIN | SWITCHING | 8V | 350mV | 3.5W Ta 19W Tc | 50A | -8V | P-Channel | 2300pF @ 4V | 16m Ω @ 8.2A, 4.5V | 800mV @ 250μA | 12A Tc | 50nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N05-06L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | Digi-Reel® | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110n0506le3-datasheets-3043.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.414mm | 4.826mm | 9.652mm | Lead Free | 2 | No SVHC | 6mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 36W | GULL WING | 4 | Single | 3.7W | 1 | FET General Purpose Powers | R-PSSO-G2 | 15 ns | 15ns | 15 ns | 35 ns | 110A | 20V | 55V | SWITCHING | 70 ns | 240A | 55V | N-Channel | 3300pF @ 25V | 3 V | 6m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 100nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7615ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7615adnt1ge3-datasheets-9012.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | Lead Free | 5 | 14 Weeks | No SVHC | 4.4mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | Single | 40 | 3.7W | 1 | 150°C | S-PDSO-C5 | 13 ns | 40ns | 26 ns | 85 ns | -22.1A | 12V | SILICON | DRAIN | SWITCHING | 20V | -400mV | 3.7W Ta 52W Tc | 35A | 20 mJ | -20V | P-Channel | 5590pF @ 10V | 4.4m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 183nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1307DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1307dlt1ge3-datasheets-6164.pdf | SC-70, SOT-323 | 2.1844mm | 990.6μm | 1.3462mm | Lead Free | 3 | 290mOhm | 3 | yes | EAR99 | 68A | unknown | e3 | MATTE TIN | 12V | DUAL | GULL WING | 260 | 3 | Single | 40 | 290mW | 1 | Not Qualified | 7.5 ns | 32ns | 32 ns | 17 ns | 850mA | 8V | SILICON | 290mW Ta | -12V | P-Channel | 290m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 850mA Ta | 5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7116DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7116dnt1e3-datasheets-0566.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 7.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 15ns | 15 ns | 36 ns | 16.4A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 2.5V | 1.5W Ta | 60A | N-Channel | 7.8m Ω @ 16.4A, 10V | 2.5V @ 250μA | 10.5A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661JTXV02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 3 | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 860mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | 4Ohm | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7469DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7469dpt1ge3-datasheets-1434.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 25MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 83W | 1 | Other Transistors | 150°C | R-PDSO-C5 | 15 ns | 25ns | 100 ns | 105 ns | -28A | 20V | SILICON | DRAIN | 80V | -3V | 5.2W Ta 83.3W Tc | 40A | -80V | P-Channel | 4700pF @ 40V | -3 V | 25m Ω @ 10.2A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660JTX02 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6660e3-datasheets-9278.pdf | TO-205AD, TO-39-3 Metal Can | Contains Lead | 3 | 3 | EAR99 | No | BOTTOM | WIRE | 2 | 725mW | 1 | FET General Purpose Powers | 990mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | AMPLIFIER | 60V | 60V | 725mW Ta 6.25W Tc | 0.99A | 3Ohm | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 990mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD40N10-25-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sud40n1025e3-datasheets-2374.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 25mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 30 | 3W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 40ns | 80 ns | 15 ns | 40A | 20V | SILICON | DRAIN | 3V | 3W Ta 136W Tc | TO-252AA | 70A | 80 mJ | 100V | N-Channel | 2400pF @ 25V | 3 V | 25m Ω @ 40A, 10V | 3V @ 250μA | 40A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS334DN-T1-GE3 | Vishay Siliconix | $0.55 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis334dnt1ge3-datasheets-9524.pdf | PowerPAK® 1212-8 | 5 | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | Single | 3.8W | 1 | FET General Purpose Power | S-XDSO-C5 | 9 ns | 10ns | 8 ns | 15 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.8W Ta 50W Tc | 50A | 30V | N-Channel | 640pF @ 15V | 11.3m Ω @ 10A, 10V | 2.4V @ 250μA | 20A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7148DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7148dpt1e3-datasheets-4845.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 11mOhm | 8 | yes | EAR99 | AVALANCHE RATED | Tin | No | S17-0173-Single | e3 | DUAL | FLAT | 8 | 1 | Single | 5.4W | 1 | 150°C | R-PDSO-F5 | 17 ns | 255ns | 100 ns | 39 ns | 28A | 20V | 75V | SILICON | DRAIN | SWITCHING | 2V | 5.4W Ta 96W Tc | 60A | 75V | N-Channel | 2900pF @ 35V | 90ns | 96ns | 2 V | 11m Ω @ 15A, 10V | 2.5V @ 250μA | 28A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD06N10-225L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-sud06n10225lge3-datasheets-0233.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 1.437803g | No SVHC | 200mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | SUD06N10 | 4 | 1 | Single | 30 | 1 | R-PSSO-G2 | 7 ns | 8ns | 9 ns | 8 ns | 6.5A | 20V | SILICON | DRAIN | 1.25W Ta 16.7W Tc | 8A | 100V | N-Channel | 240pF @ 25V | 200m Ω @ 3A, 10V | 3V @ 250μA | 6.5A Tc | 4nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7820DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7820dnt1ge3-datasheets-7585.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 11 ns | 12ns | 12 ns | 30 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.5W Ta | 0.24Ohm | 0.6 mJ | 200V | N-Channel | 240m Ω @ 2.6A, 10V | 4V @ 250μA | 1.7A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60S-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60se3-datasheets-9796.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | Unknown | 190mOhm | 3 | yes | No | GULL WING | 260 | 4 | Single | 40 | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | DRAIN | SWITCHING | 2V | 250W Tc | 65A | 690 mJ | 600V | N-Channel | 2810pF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7336ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7336adpt1e3-datasheets-8486.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3mOhm | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 24 ns | 16ns | 32 ns | 90 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1V | 5.4W Ta | 70A | 30V | N-Channel | 5600pF @ 15V | 1 V | 3m Ω @ 25A, 10V | 3V @ 250μA | 30A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM25P10-138-E3 | Vishay Siliconix | $9.55 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum25p10138e3-datasheets-2086.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | EAR99 | unknown | SINGLE | GULL WING | 1 | R-PSSO-G2 | 16.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 100V | 100V | 3.75W Ta 88.2W Tc | 40A | 0.142Ohm | N-Channel | 2110pF @ 25V | 13.8m Ω @ 6A, 10V | 4V @ 250μA | 16.7A Tc | 60nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7884BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7884bdpt1ge3-datasheets-8917.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7.5mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.6W | 1 | FET General Purpose Power | R-XDSO-C5 | 30 ns | 14ns | 11 ns | 38 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 3V | 4.6W Ta 46W Tc | 50A | 54 mJ | 40V | N-Channel | 3540pF @ 20V | 7.5m Ω @ 16A, 10V | 3V @ 250μA | 58A Tc | 77nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SMM2348ES-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-smm2348est1ge3-datasheets-3544.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 25 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 3W Tc | 8A | 0.024Ohm | 50 pF | N-Channel | 540pF @ 15V | 24m Ω @ 12A, 10V | 2.5V @ 250μA | 8A Tc | 14.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4425BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4425bdyt1e3-datasheets-2582.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 12mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 20 | 1.5W | 1 | Other Transistors | 15 ns | 13ns | 13 ns | 100 ns | -11.4A | 20V | SILICON | SWITCHING | 30V | -400mV | 1.5W Ta | -30V | P-Channel | -400 mV | 12m Ω @ 11.4A, 10V | 3V @ 250μA | 8.8A Ta | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60AEL-GE3 | Vishay Siliconix | $3.41 |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n60aelge3-datasheets-5280.pdf | TO-220-3 | TO-220AB | 600V | 208W Tc | N-Channel | 1757pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2356DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2356dst1ge3-datasheets-5405.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 960mW | 1 | 150°C | 6 ns | 52ns | 53 ns | 13 ns | 3.2A | 12V | SILICON | SWITCHING | 1.5V | 960mW Ta 1.7W Tc | 40V | N-Channel | 370pF @ 20V | 51m Ω @ 3.2A, 10V | 1.5V @ 250μA | 4.3A Tc | 13nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32414DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sip32416dnpt1ge4-datasheets-6370.pdf | 8-UFDFN Exposed Pad | Lead Free | 8 | 14 Weeks | 50.008559mg | Unknown | 62mOhm | 8 | On/Off | EAR99 | No | 5.5V | 1 | Load Discharge, Slew Rate Controlled | 580mW | DUAL | 0.5mm | SIP32414 | 8 | DUAL SWITCHING CONTROLLER | 580mW | 3A | 5V | 2A | N-Channel | 1.1V~5.5V | 210 μs | 1 μs | 2 | General Purpose | High Side | Reverse Current | 5V | 2.4A | Not Required | 62m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2312BDS-T1-GE3 | Vishay Siliconix | $0.45 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2312bdst1e3-datasheets-6507.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 31mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 9 ns | 30ns | 30 ns | 35 ns | 5A | 8V | 20V | SILICON | SWITCHING | 8V | 750mW Ta | 20V | N-Channel | 8 V | 31m Ω @ 5A, 4.5V | 850mV @ 250μA | 3.9A Ta | 12nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32460DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | RoHS Compliant | /files/vishaysiliconix-sip32462dbt2ge1-datasheets-3105.pdf | 4-UFBGA, CSPBGA | 20 Weeks | 150mOhm | 4 | On/Off | unknown | Slew Rate Controlled | 300mW | SPST | N-Channel | 1.2V~5.5V | 130 μs | 2 μs | 1 | General Purpose | High Side | Reverse Current | 1.2A | Not Required | 50m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3456DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3456ddvt1ge3-datasheets-0664.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 40mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.7W | 1 | FET General Purpose Power | 12 ns | 13ns | 13 ns | 16 ns | 5A | 20V | SILICON | SWITCHING | 1.2V | 1.7W Ta 2.7W Tc | 5A | 30V | N-Channel | 325pF @ 15V | 40m Ω @ 5A, 10V | 3V @ 250μA | 6.3A Tc | 9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32408DNP-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | 0.6mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sip32409dnpt1ge4-datasheets-0144.pdf | 4-UFDFN Exposed Pad | Lead Free | 4 | 16 Weeks | 50.008559mg | Unknown | 52mOhm | 4 | On/Off | 5.5V | 1 | Slew Rate Controlled | 735mW | DUAL | NO LEAD | NOT SPECIFIED | 1.2V | 0.5mm | 1 | AUDIO/VIDEO SWITCH | NOT SPECIFIED | 735mW | 3.5A | 3.5A | N-Channel | 1.1V~5.5V | 1.8 ms | 1 μs | 1 | General Purpose | High Side | Reverse Current | 3800000ns | Not Required | 44m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISF02DN-T1-GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisf02dnt1ge3-datasheets-1923.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 25V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2650pF @ 10V | 3.5mOhm @ 7A, 10V | 2.3V @ 250μA | 30.5A Ta 60A Tc | 56nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3865CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3865cdvt1ge3-datasheets-0081.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | On/Off | No | Slew Rate Controlled | 830mW | SI3865 | Dual | 830mW | 6-TSOP | 1A | P-Channel | 1.8V~12V | 2.8A | 8V | 1 | General Purpose | High Side | 2.8A | 60mOhm | 50mOhm | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1023X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1023xt1ge3-datasheets-3425.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 8.193012mg | Unknown | 1.2Ohm | 6 | 250mW | SI1023 | 2 | Dual | 250mW | 2 | SC-89-6 | 14ns | 46 ns | -350mA | 6V | 20V | 250mW | 2.7Ohm | -20V | 2 P-Channel (Dual) | -450 mV | 1.2Ohm @ 350mA, 4.5V | 450mV @ 250μA (Min) | 370mA | 1.5nC @ 4.5V | Logic Level Gate | 1.2 Ω |
