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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Lead Length | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI7115DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7115dnt1ge3-datasheets-0397.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 11 ns | 28ns | 35 ns | 52 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 150V | 52W Tc | 0.295Ohm | -150V | P-Channel | 1190pF @ 50V | 295m Ω @ 4A, 10V | 4V @ 250μA | 8.9A Tc | 42nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG387BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg390bdje3-datasheets-5350.pdf | 14-DIP (0.300, 7.62mm) | 15V | 1mA | 8 Weeks | 36V | 13V | 50Ohm | 14 | no | unknown | 230μA | 470mW | 14 | 1 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 50Ohm | 2:1 | SPDT | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 10pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ466E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq466et1ge3-datasheets-0617.pdf | 8-PowerTDFN | 2.03mm | 14 Weeks | C14-0891-SINGLE | 1 | 150W | 175°C | PowerPAK® 8 x 8 | 24 ns | 47 ns | 200A | 20V | 60V | 150W Tc | 1.7mOhm | 60V | N-Channel | 10210pF @ 25V | 1.9mOhm @ 10A, 10V | 3.5V @ 250μA | 200A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 547.485991mg | 12V | 2.7V | 17Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 650mW | GULL WING | 1.27mm | 16 | 650mW | Multiplexer or Switches | 3/12/+-5V | 280MHz | 50 ns | 35 ns | 6V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 17Ohm | BREAK-BEFORE-MAKE | 85ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR167DP-T1-GE3 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir167dpt1ge3-datasheets-3095.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 65.8W Tc | P-Channel | 4380pF @ 15V | 5.5mOhm @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 111nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417BAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2016 | 8-CDIP (0.300, 7.62mm) | 14 Weeks | 35Ohm | 1 | 8-CERDIP | 35Ohm | 12V ±15V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 62ns, 53ns | 38pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4894BDY-T1-E3 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4894bdyt1e3-datasheets-3605.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 11mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.4W | 1 | FET General Purpose Powers | 13 ns | 10ns | 10 ns | 33 ns | 12A | 20V | 30V | SILICON | 1.4W Ta | N-Channel | 1580pF @ 15V | 3 V | 11m Ω @ 12A, 10V | 3V @ 250μA | 8.9A Ta | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 10 Weeks | 547.485991mg | 44V | 13V | 35Ohm | no | unknown | 4 | e0 | TIN LEAD | YES | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | R-PDSO-G16 | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | 116ns | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQR97N06-6M3L_GE3 | Vishay Siliconix | $16.23 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqr97n066m3lge3-datasheets-3737.pdf | TO-252-4, DPak (3 Leads + Tab) | 12 Weeks | TO-252 (DPAK) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2017 | 16-CDIP (0.300, 7.62mm) | 14 Weeks | 35Ohm | 4 | 16-CERDIP | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR180DP-T1-RE3 | Vishay Siliconix | $1.71 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir180dpt1re3-datasheets-4199.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5.4W Ta 83.3W Tc | N-Channel | 4030pF @ 30V | 2.05mOhm @ 10A, 10V | 3.6V @ 250μA | 32.4A Ta 60A Tc | 87nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4051EEQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4053eeqt1ge3-datasheets-7535.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | 78Ohm | 16 | unknown | 1 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 5V | 0.65mm | 8 | SINGLE-ENDED MULTIPLEXER | NOT SPECIFIED | 1 | 308MHz | -5V | 78Ohm | 49 dB | 0.91Ohm | 97ns | 86ns | 3V~16V ±3V~8V | 8:1 | 1nA | 2.2pF 9.2pF | 75ns, 88ns | 0.3pC | 910m Ω | -105dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR390DP-T1-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr390dpt1ge3-datasheets-4760.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 30V | 6.25W Ta 125W Tc | N-Channel | 10180pF @ 15V | 0.8mOhm @ 20A, 10V | 2V @ 250μA | 69.9A Ta 100A Tc | 153nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg444dyt1e3-datasheets-1287.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 160Ohm | 16 | yes | Tin | unknown | 4 | 1μA | e3 | Non-Inverting | 640mW | GULL WING | 260 | 15V | 1.27mm | DG445 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 512/+-15V | Not Qualified | SPST | 250 ns | 210 ns | 22V | 20V | Dual, Single | 7V | -15V | 30mA | 4 | 85Ohm | 50Ohm | 60 dB | BREAK-BEFORE-MAKE | NO | 5V~36V ±5V~20V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR680DP-T1-GE3 | Vishay Siliconix | $2.25 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr680dpt1ge3-datasheets-4978.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 80V | 6.25W Ta 125W Tc | N-Channel | 5150pF @ 40V | 2.9mOhm @ 20A, 10V | 3.4V @ 250μA | 32.8A Ta 100A Tc | 105nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG507BEN-T1-GE3 | Vishay Siliconix | $4.24 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100μA | 4.57mm | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg507bewt1ge3-datasheets-3635.pdf | 28-LCC (J-Lead) | 15V | 217MHz | 100μA | 28 | 12 Weeks | Unknown | 44V | 12V | 450Ohm | 28 | yes | No | 1 | 5μA | 1.693W | QUAD | J BEND | 260 | 15V | DG507 | 28 | 8 | 40 | 2 | 420 ns | 220 ns | 20V | Multiplexer | Dual, Single | 5V | -15V | 300Ohm | 84 dB | 10Ohm | BREAK-BEFORE-MAKE | 310ns | 0.03A | 8:1 | ±5V~20V | 1nA | 3pF 17pF | 250ns, 200ns | 1pC | 10 Ω | -84dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM60020E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum60020ege3-datasheets-5301.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 80V | 375W Tc | N-Channel | 10680pF @ 40V | 2.1mOhm @ 30A, 10V | 4V @ 250μA | 150A Tc | 227nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG405BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1mA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg403bdye3-datasheets-4860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 55Ohm | 16 | yes | unknown | 2 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG405 | 16 | 2 | DPST | 40 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC20GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfibc20gpbf-datasheets-5671.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 30W | 1 | FET General Purpose Power | 10 ns | 23ns | 25 ns | 30 ns | 1.7A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 30W Tc | TO-220AB | 6.8A | 84 mJ | N-Channel | 350pF @ 25V | 4.4 Ω @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2012 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | no | No | 400mW | 8 | 400mW | 41 ns | 32 ns | 6V | Dual, Single | 3V | 1 | 20Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA180N60E-GE3 | Vishay Siliconix | $2.72 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha180n60ege3-datasheets-5993.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 600V | 33W Tc | N-Channel | 1085pF @ 100V | 180mOhm @ 9.5A, 10V | 5V @ 250μA | 19A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419LAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | 8-CDIP (0.300, 7.62mm) | 7.62mm | 8 | 12V | 2.7V | 20Ohm | 8 | no | unknown | 1 | NO | DUAL | NOT SPECIFIED | 5V | 2.54mm | 8 | 2 | DPST | NOT SPECIFIED | Multiplexer or Switches | 1 | Not Qualified | 6V | 3V | -5V | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 32ns | NO/NC | 2.7V~12V ±3V~6V | 2:1 | SPDT | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihb23n60ege3-datasheets-6346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 1 | R-PSSO-G2 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | SWITCHING | 600V | 600V | 227W Tc | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5.08mm | Non-RoHS Compliant | /files/vishaysiliconix-dg444bdj-datasheets-7580.pdf | 16-DIP (0.300, 7.62mm) | 20.13mm | 7.62mm | 1μA | 16 | 36V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | NO | 470mW | NOT SPECIFIED | 15V | 16 | 1 | NOT SPECIFIED | Multiplexer or Switches | 4 | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF12N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihf12n50ce3-datasheets-6578.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | 6.000006g | 3 | yes | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 18 ns | 35ns | 6 ns | 23 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 36W Tc | TO-220AB | 28A | 0.555Ohm | N-Channel | 1375pF @ 25V | 555m Ω @ 4A, 10V | 5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418LDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | no | VIDEO APPLICATION | unknown | 1 | e0 | TIN LEAD | 400mW | GULL WING | 240 | 5V | 8 | 1 | 30 | 400mW | Multiplexer or Switches | Not Qualified | 41 ns | 32 ns | 6V | Dual, Single | 3V | -5V | 1 | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 44ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ494DP-T1-GE3 | Vishay Siliconix | $6.39 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij494dpt1ge3-datasheets-7024.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 150V | 69.4W Tc | N-Channel | 1070pF @ 75V | 23.2m Ω @ 15A, 10V | 4.5V @ 250μA | 36.8A Tc | 31nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9453EN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 0.8mm | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg9453ent1e4-datasheets-2783.pdf | 16-WFQFN | 2.6mm | 16 | 12V | 2.7V | 105Ohm | yes | unknown | 3 | YES | QUAD | NO LEAD | 260 | 0.4mm | 16 | 2 | SINGLE-ENDED MULTIPLEXER | 40 | Multiplexer or Switches | 0.01mA | 3 | Not Qualified | R-XQCC-N16 | 270MHz | 5V | 2.5V | 105Ohm | 44 dB | 3Ohm | BREAK-BEFORE-MAKE | 295ns | 2.7V~12V ±2.5V~5V | 2:1 | SPDT | 1nA | 1pF 9pF | 185ns, 130ns | 0.79pC | 4 Ω | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU420PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | 500V | 2.4A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 12 Weeks | 329.988449mg | Unknown | 3Ohm | 3 | yes | AVALANCHE RATED | No | 9.65mm | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 42W | 1 | FET General Purpose Power | 8 ns | 8.6ns | 16 ns | 33 ns | 2.4A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 8A | 400 mJ | 500V | N-Channel | 360pF @ 25V | 3 Ω @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM187BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | CDIP | 14 | 1 | 825mW | 18V | 10V | 2 | 2 |
