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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFB18N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb18n50kpbf-datasheets-6636.pdf | 500V | 18A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 18 Weeks | 6.000006g | Unknown | 290mOhm | 3 | No | 1 | Single | 200W | 1 | TO-220AB | 2.83nF | 22 ns | 60ns | 30 ns | 45 ns | 17A | 30V | 500V | 500V | 5V | 220W Tc | 290mOhm | 500V | N-Channel | 2830pF @ 25V | 5 V | 290mOhm @ 10A, 10V | 5V @ 250μA | 17A Tc | 120nC @ 10V | 290 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRFP448PBF | Vishay Siliconix | $0.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp448pbf-datasheets-6642.pdf | 500V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 600MOhm | 3 | No | 1 | Single | 180W | 1 | TO-247-3 | 1.9nF | 18 ns | 40ns | 32 ns | 62 ns | 11A | 20V | 500V | 4V | 180W Tc | 600mOhm | 500V | N-Channel | 1900pF @ 25V | 4 V | 600mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 84nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHB21N65EF-GE3 | Vishay Siliconix | $21.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp21n65efge3-datasheets-6506.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 21 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 21A | 650V | 208W Tc | N-Channel | 2322pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 106nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDI045N10A-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.29mm | 9.65mm | 4.83mm | 9 Weeks | 2.084g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | No | Single | 263W | 1 | FET General Purpose Power | 23 ns | 26ns | 15 ns | 50 ns | 120A | 20V | 263W Tc | 100V | N-Channel | 5270pF @ 50V | 4.5m Ω @ 100A, 10V | 4V @ 250μA | 120A Tc | 74nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP100N60E-GE3 | Vishay Siliconix | $3.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp100n60ege3-datasheets-6568.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 208W Tc | N-Channel | 1851pF @ 100V | 100mOhm @ 13A, 10V | 5V @ 250μA | 30A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP048RPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfp048rpbf-datasheets-6571.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 12 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 70A | 20V | 60V | 4V | 190W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 4 V | 18mOhm @ 44A, 10V | 4V @ 250μA | 70A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STFI20NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-262-3 Full Pack, I2Pak | 2.240009g | 250mOhm | EAR99 | NOT SPECIFIED | STFI20N | 1 | Single | NOT SPECIFIED | 15 ns | 13.5ns | 21 ns | 75 ns | 15A | 25V | 650V | 30W Tc | 710V | N-Channel | 1280pF @ 50V | 270m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 44nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF12N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihf12n50ce3-datasheets-6578.pdf | TO-220-3 Full Pack | 3 | 8 Weeks | 6.000006g | 3 | yes | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 18 ns | 35ns | 6 ns | 23 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 36W Tc | TO-220AB | 28A | 0.555Ohm | N-Channel | 1375pF @ 25V | 555m Ω @ 4A, 10V | 5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| NTHL095N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nthl095n65s3hf-datasheets-6583.pdf | TO-247-3 | 12 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 272W Tc | N-Channel | 2930pF @ 400V | 95m Ω @ 18A, 10V | 5V @ 860μA | 36A Tc | 66nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF35N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf35n60dm2-datasheets-6588.pdf | TO-220-3 Full Pack | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF35N | NOT SPECIFIED | 28A | 600V | 4V | 40W Tc | N-Channel | 2400pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 54nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCA22N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fca22n60n-datasheets-6600.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 12 Weeks | 6.401g | No SVHC | 165mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 205W | 1 | FET General Purpose Power | 16.9 ns | 16.7s | 4 ns | 49 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 600V | 3V | 205W Tc | 66A | 672 mJ | 650V | N-Channel | 1950pF @ 100V | 3 V | 165m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| NTPF082N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-ntpf082n65s3f-datasheets-6608.pdf | TO-220-3 Full Pack | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | 650V | 48W Tc | N-Channel | 3240pF @ 400V | 82m Ω @ 20A, 10V | 5V @ 4mA | 40A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020JNXC7G | ROHM Semiconductor | $10.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020jnxc7g-datasheets-6615.pdf | TO-220-3 Full Pack | 18 Weeks | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 76W Tc | N-Channel | 1500pF @ 100V | 234m Ω @ 10A, 15V | 7V @ 3.5mA | 20A Tc | 45nC @ 15V | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH067N65S3-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch067n65s3f155-datasheets-6617.pdf | TO-247-3 | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | not_compliant | e3 | Tin (Sn) | Single | 44A | 650V | 4.5V | 312W Tc | N-Channel | 3090pF @ 400V | 67m Ω @ 22A, 10V | 4.5V @ 4.4mA | 44A Tc | 78nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI28N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf28n60m2-datasheets-4348.pdf | TO-262-3 Full Pack, I2Pak | 2.084002g | 135mOhm | EAR99 | NOT SPECIFIED | STFI28N | 1 | Single | NOT SPECIFIED | 14.5 ns | 7.2ns | 8 ns | 100 ns | 22A | 25V | 30W Tc | 600V | N-Channel | 1440pF @ 100V | 150m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 36nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF17N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf17n62k3-datasheets-6631.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 340MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | AVALANCHE ENERGY RATED | No | e3 | Matte Tin (Sn) - annealed | STF17 | 3 | Single | 40W | 1 | FET General Purpose Power | 22 ns | 29ns | 62 ns | 110 ns | 15.5A | 30V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 60A | 620V | N-Channel | 3100pF @ 50V | 340m Ω @ 7.5A, 10V | 4.5V @ 100μA | 15.5A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP11NM60FDFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 600V | 11A | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | No SVHC | 450mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | STP11N | 3 | Single | 35W | 1 | FET General Purpose Power | 20 ns | 16ns | 15 ns | 11A | 30V | ISOLATED | SWITCHING | 4V | 35W Tc | TO-220AB | 44A | 600V | N-Channel | 900pF @ 25V | 450m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STI400N4F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti400n4f6-datasheets-8081.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 1.437803g | EAR99 | NOT SPECIFIED | STI400N | 1 | Single | NOT SPECIFIED | FET General Purpose Powers | 120A | 20V | 300W Tc | 40V | N-Channel | 20000pF @ 25V | 1.7m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 377nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB120N60E-GE3 | Vishay Siliconix | $4.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb120n60ege3-datasheets-6562.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 600V | 179W Tc | N-Channel | 1562pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 25A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP21N80AE-GE3 | Vishay Siliconix | $4.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp21n80aege3-datasheets-6479.pdf | TO-220-3 | 14 Weeks | TO-220AB | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF11N90C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqaf11n90c-datasheets-6482.pdf | 900V | 11A | TO-3P-3 Full Pack | Lead Free | 3 | 4 Weeks | 6.962g | ACTIVE (Last Updated: 12 hours ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 120W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 60 ns | 130ns | 85 ns | 130 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 120W Tc | 7A | 28A | 960 mJ | 900V | N-Channel | 3290pF @ 25V | 1.1 Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FDA032N08 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fda032n08-datasheets-6489.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 8 Weeks | 6.401g | 3.2MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | Not Qualified | 230 ns | 191ns | 121 ns | 335 ns | 235A | 20V | SILICON | SWITCHING | 375W Tc | 940A | 75V | N-Channel | 15160pF @ 25V | 3.2m Ω @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTHL110N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nthl110n65s3f-datasheets-6497.pdf | TO-247-3 | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | 650V | 240W Tc | N-Channel | 2560pF @ 400V | 110m Ω @ 15A, 10V | 5V @ 3mA | 30A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP21N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp21n65efge3-datasheets-6506.pdf | TO-220-3 | 3 | 22 Weeks | 6.000006g | Unknown | 3 | yes | No | 1 | Single | 1 | 22 ns | 34ns | 68 ns | 68 ns | 21A | 20V | SILICON | SWITCHING | 650V | 208W Tc | TO-220AB | 55A | 700V | N-Channel | 2322pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 106nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STFI130N10F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp130n10f3-datasheets-6199.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | No | STFI130N | Single | 35W | FET General Purpose Powers | 17 ns | 38ns | 7.2 ns | 52 ns | 46A | 20V | 35W Tc | 100V | N-Channel | 3305pF @ 25V | 9.6m Ω @ 23A, 10V | 4V @ 250μA | 46A Tc | 57nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM50010E-GE3 | Vishay Siliconix | $2.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50010ege3-datasheets-6517.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 375W Tc | N-Channel | 10895pF @ 30V | 1.75mOhm @ 30A, 10V | 4V @ 250μA | 150A Tc | 212nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI260N6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi260n6f6-datasheets-6519.pdf | TO-262-3 Full Pack, I2Pak | 2.240009g | 3 | OBSOLETE (Last Updated: 7 months ago) | EAR99 | No | STFI260N | 1 | Single | FET General Purpose Powers | 31.4 ns | 165ns | 62.6 ns | 144.4 ns | 80A | 20V | 60V | 41.7W Tc | N-Channel | 11400pF @ 25V | 3m Ω @ 60A, 10V | 4V @ 250μA | 80A Tc | 183nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA140N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa140n10-datasheets-6521.pdf&product=onsemiconductor-fqa140n10-6830831 | 100V | 140A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 9 Weeks | 6.401g | No SVHC | 10mOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 375W | 1 | FET General Purpose Power | 75 ns | 940ns | 360 ns | 350 ns | 140A | 25V | SILICON | SWITCHING | 4V | 375W Tc | 560A | 100V | N-Channel | 7900pF @ 25V | 10m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 285nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| IPZA60R120P7XKSA1 | Infineon Technologies |
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0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-ipza60r120p7xksa1-datasheets-6529.pdf | TO-247-4 | 4 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 95W Tc | 78A | 0.12Ohm | 82 mJ | N-Channel | 1544pF @ 400V | 120m Ω @ 8.2A, 10V | 4V @ 410μA | 26A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDP025N06 | ON Semiconductor |
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0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp025n06-datasheets-6532.pdf | TO-220-3 | 9.9mm | 15.7mm | 4.5mm | Lead Free | 3 | 9 Weeks | 2.421g | No SVHC | 2.5MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 395W | 1 | FET General Purpose Power | 134 ns | 324ns | 250 ns | 348 ns | 265A | 20V | SILICON | SWITCHING | 3.5V | 395W Tc | TO-220AB | 60V | N-Channel | 14885pF @ 25V | 3.5 V | 2.5m Ω @ 75A, 10V | 4.5V @ 250μA | 120A Tc | 226nC @ 10V | 10V | ±20V |
