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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AO4447A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | yes | EAR99 | No | DUAL | GULL WING | 8 | 3.1W | 1 | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 30V | 30V | 3.1W Ta | 0.007Ohm | P-Channel | 5500pF @ 15V | 7m Ω @ 17A, 10V | 1.6V @ 250μA | 17A Ta | 105nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4436DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4436dyt1ge3-datasheets-6502.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 36mOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Powers | Not Qualified | 10 ns | 15ns | 10 ns | 25 ns | 8A | 20V | SILICON | SWITCHING | 60V | 60V | 1.5V | 2.5W Ta 5W Tc | 8A | 25A | N-Channel | 1100pF @ 30V | 36m Ω @ 4.6A, 10V | 2.5V @ 250μA | 8A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRLR3105TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlr3105pbf-datasheets-9958.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 57W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 57ns | 37 ns | 25 ns | 25A | 16V | SILICON | DRAIN | SWITCHING | 57W Tc | TO-252AA | 100A | 61 mJ | 55V | N-Channel | 710pF @ 25V | 37m Ω @ 15A, 10V | 3V @ 250μA | 25A Tc | 20nC @ 5V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| SQ7415AEN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq7415aent1ge3-datasheets-8196.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 60V | 53W Tc | 65mOhm | P-Channel | 1385pF @ 25V | 65mOhm @ 5.7A, 10V | 2.5V @ 250μA | 16A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M12-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m1260ex-datasheets-8182.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 54A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 79W Tc | 216A | 0.012Ohm | 50.5 mJ | N-Channel | 2769pF @ 25V | 11m Ω @ 15A, 10V | 2.1V @ 1mA | 54A Tc | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD14N05LSM9A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-rfd14n05l-datasheets-8817.pdf | 50V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 100mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 24ns | 16 ns | 42 ns | 14mA | 10V | SILICON | DRAIN | SWITCHING | 2V | 48W Tc | TO-252AA | 50V | N-Channel | 670pF @ 25V | 2 V | 100m Ω @ 14A, 5V | 2V @ 250μA | 14A Tc | 40nC @ 10V | 5V | ±10V | |||||||||||||||||||||||||||||||||
| CPC3980ZTR | IXYS Integrated Circuits Division | $2.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | TO-261-4, TO-261AA | 8 Weeks | SOT-223 | 115pF | 800V | 1.8W Ta | N-Channel | 115pF @ 25V | 45Ohm @ 100mA, 0V | Depletion Mode | 45 Ω | 0V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD19N10LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqd19n10ltm-datasheets-8261.pdf | 100V | 15.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 2 | 6 Weeks | 260.37mg | No SVHC | 100mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 410ns | 140 ns | 20 ns | 15.6A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 50W Tc | 62.4A | 220 mJ | 100V | N-Channel | 870pF @ 25V | 100m Ω @ 7.8A, 10V | 2V @ 250μA | 15.6A Tc | 18nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRLR110TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-irlu110pbf-datasheets-8636.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | No SVHC | 540mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | R-PSSO-G2 | 9.3 ns | 47ns | 17 ns | 16 ns | 4.3A | 10V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 25W Tc | 100V | N-Channel | 250pF @ 25V | 540m Ω @ 2.6A, 5V | 2V @ 250μA | 4.3A Tc | 6.1nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||
| ZVP2106ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvp2106a-datasheets-8878.pdf&product=diodesincorporated-zvp2106astz-10057172 | -60V | -280mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 5Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | Other Transistors | 7 ns | 15ns | 15 ns | 12 ns | 280mA | 20V | SILICON | SWITCHING | 60V | 700mW Ta | 0.28A | -60V | P-Channel | 100pF @ 18V | 5 Ω @ 500mA, 10V | 3.5V @ 1mA | 280mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTD20P06LT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntd20p06l001-datasheets-9265.pdf&product=onsemiconductor-ntd20p06lt4g-10057132 | -60V | -15A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 8 Weeks | No SVHC | 130mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 65W | 1 | Other Transistors | R-PSSO-G2 | 11 ns | 90ns | 70 ns | 28 ns | 15.5A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1.5V | 65W Tc | 50A | -60V | P-Channel | 1190pF @ 25V | -1.5 V | 150m Ω @ 7.5A, 5V | 2V @ 250μA | 15.5A Ta | 26nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||
| AOD424 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aod424-datasheets-9185.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | FET General Purpose Power | 45A | Single | 20V | 2.5W Ta 100W Tc | N-Channel | 4630pF @ 10V | 4.4m Ω @ 20A, 4.5V | 1.6V @ 250μA | 18A Ta 45A Tc | 43nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP45H150DHE-13 | Diodes Incorporated | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp45h150dhe13-datasheets-7850.pdf | TO-261-4, TO-261AA | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 450V | 13.9W Tc | P-Channel | 59.2pF @ 25V | 150 Ω @ 50mA, 10V | 4V @ 250μA | 250mA Tc | 1.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3007SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmp3007sfg13-datasheets-3681.pdf | 8-PowerVDFN | 18 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.8W Ta | P-Channel | 2826pF @ 15V | 6m Ω @ 11.5A, 10V | 3V @ 250μA | 70A Tc | 64.2nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS5C670NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvtfs5c670nlwftag-datasheets-0513.pdf | 8-PowerWDFN | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 3.2W Ta 63W Tc | N-Channel | 1400pF @ 25V | 6.8m Ω @ 35A, 10V | 2V @ 250μA | 16A Ta 70A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD10N20LZTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd10n20lztm-datasheets-8092.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 11 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 56W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 15ns | 25 ns | 55 ns | 7.6A | 20V | SILICON | DRAIN | SWITCHING | 83W Tc | TO-252AA | 200V | N-Channel | 585pF @ 25V | 360m Ω @ 3.8A, 10V | 2.5V @ 250μA | 7.6A Tc | 16nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AO4354 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 16 Weeks | 8 | 3.1W | 1 | 23A | 20V | 30V | 3.1W Ta | N-Channel | 2010pF @ 15V | 3.7m Ω @ 20A, 10V | 2.2V @ 250μA | 23A Ta | 49nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8736TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf8736pbf-datasheets-7216.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 4.8MOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 12 ns | 15ns | 7.5 ns | 13 ns | 18A | 20V | SILICON | SWITCHING | 1.8V | 2.5W Ta | 30V | N-Channel | 2315pF @ 15V | 1.8 V | 4.8m Ω @ 18A, 10V | 2.35V @ 50μA | 18A Ta | 26nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NVD5C684NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvd5c684nlt4g-datasheets-8204.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 27W Tc | 130A | 0.0245Ohm | N-Channel | 700pF @ 25V | 16.5m Ω @ 15A, 10V | 2.1V @ 250μA | 38A Tc | 4.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN100-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn1007f-datasheets-7878.pdf | 30V | 1.1A | TO-236-3, SC-59, SOT-23-3 | 3.1mm | 1.3mm | 1.7mm | Lead Free | 3 | 19 Weeks | 7.994566mg | No SVHC | 240MOhm | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 500mW | 1 | FET General Purpose Power | 10 ns | 15ns | 15 ns | 25 ns | 1.1A | 20V | 30V | SILICON | SWITCHING | 3V | 500mW Ta | 30V | N-Channel | 150pF @ 10V | 3 V | 240m Ω @ 1A, 10V | 3V @ 1mA | 1.1A Ta | 5.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| AON7296 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aon7296-datasheets-9167.pdf | 8-PowerVDFN | 5 | 18 Weeks | 8 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | 12.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.1W Ta 20.8W Tc | 25A | 0.066Ohm | N-Channel | 415pF @ 50V | 66m Ω @ 5A, 10V | 2.8V @ 250μA | 5A Ta 12.5A Tc | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2392ADS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2392adst1ge3-datasheets-7821.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 30 | 1.25W | 1 | 150°C | 8 ns | 10 ns | 2.2A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3V | 1.25W Ta 2.5W Tc | 100V | N-Channel | 196pF @ 50V | 126m Ω @ 2A, 10V | 3V @ 250μA | 3.1A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI5424DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si5424dct1e3-datasheets-5453.pdf | 8-SMD, Flat Lead | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 6A | 25V | SILICON | SWITCHING | 2.3V | 2.5W Ta 6.25W Tc | 6A | 40A | 0.024Ohm | 30V | N-Channel | 950pF @ 15V | 24m Ω @ 4.8A, 10V | 2.3V @ 250μA | 6A Tc | 32nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| SI7111EDN-T1-GE3 | Vishay Siliconix | $3.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7111ednt1ge3-datasheets-8071.pdf | PowerPAK® 1212-8 | 14 Weeks | No SVHC | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | -60A | 30V | -1.6V | 52W Tc | P-Channel | 5860pF @ 15V | 8.55m Ω @ 15A, 4.5V | 1.6V @ 250μA | 60A Tc | 46nC @ 2.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML0040TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlml0040trpbf-datasheets-7603.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 56MOhm | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 1.3W | 1 | FET General Purpose Power | 5.1 ns | 5.4ns | 4.3 ns | 6.4 ns | 3.6A | 16V | SILICON | SWITCHING | 1.8V | 1.3W Ta | 40V | N-Channel | 266pF @ 25V | 1.8 V | 56m Ω @ 3.6A, 10V | 2.5V @ 25μA | 3.6A Ta | 3.9nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| 2SK2009TE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-2sk2009te85lf-datasheets-7797.pdf | TO-236-3, SC-59, SOT-23-3 | 52 Weeks | 3 | EAR99 | unknown | FET General Purpose Powers | 60 ns | 120 ns | 200mA | 20V | Single | 30V | 200mW Ta | 0.2A | N-Channel | 70pF @ 3V | 2 Ω @ 50MA, 2.5V | 1.5V @ 100μA | 200mA Ta | 2.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDT014L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-ndt014l-datasheets-7844.pdf | 60V | 2.8A | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 8 Weeks | 188mg | No SVHC | 160mOhm | 4 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 3W | 1 | FET General Purpose Power | 6 ns | 14ns | 10 ns | 15 ns | 2.8A | 20V | 60V | SILICON | DRAIN | SWITCHING | 1.5V | 3W Ta | 2.7A | 60V | N-Channel | 214pF @ 30V | 1.5 V | 160m Ω @ 3.4A, 10V | 3V @ 250μA | 2.8A Ta | 5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SISA72DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa72dnt1ge3-datasheets-7795.pdf | PowerPAK® 1212-8 | 19 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 52W Tc | N-Channel | 3240pF @ 20V | 3.5m Ω @ 10A, 10V | 2.4V @ 250μA | 60A Tc | 30nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2364EES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2364eest1ge3-datasheets-7819.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | SOT-23-3 (TO-236) | 60V | 3W Tc | N-Channel | 330pF @ 25V | 240mOhm @ 2A, 4.5V | 1V @ 250μA | 2A Tc | 2.5nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1440EH-T1_GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq1440eht1ge3-datasheets-7915.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 3.3W Tc | 1.7A | 0.12Ohm | 17 pF | N-Channel | 344pF @ 15V | 120m Ω @ 3.8A, 10V | 2.5V @ 250μA | 1.7A Tc | 5.5nC @ 10V | 4.5V 10V | ±20V |
