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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| 2SK2009TE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-2sk2009te85lf-datasheets-7797.pdf | TO-236-3, SC-59, SOT-23-3 | 52 Weeks | 3 | EAR99 | unknown | FET General Purpose Powers | 60 ns | 120 ns | 200mA | 20V | Single | 30V | 200mW Ta | 0.2A | N-Channel | 70pF @ 3V | 2 Ω @ 50MA, 2.5V | 1.5V @ 100μA | 200mA Ta | 2.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDT014L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-ndt014l-datasheets-7844.pdf | 60V | 2.8A | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 8 Weeks | 188mg | No SVHC | 160mOhm | 4 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 3W | 1 | FET General Purpose Power | 6 ns | 14ns | 10 ns | 15 ns | 2.8A | 20V | 60V | SILICON | DRAIN | SWITCHING | 1.5V | 3W Ta | 2.7A | 60V | N-Channel | 214pF @ 30V | 1.5 V | 160m Ω @ 3.4A, 10V | 3V @ 250μA | 2.8A Ta | 5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SISA72DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa72dnt1ge3-datasheets-7795.pdf | PowerPAK® 1212-8 | 19 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 52W Tc | N-Channel | 3240pF @ 20V | 3.5m Ω @ 10A, 10V | 2.4V @ 250μA | 60A Tc | 30nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2364EES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2364eest1ge3-datasheets-7819.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | SOT-23-3 (TO-236) | 60V | 3W Tc | N-Channel | 330pF @ 25V | 240mOhm @ 2A, 4.5V | 1V @ 250μA | 2A Tc | 2.5nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1440EH-T1_GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq1440eht1ge3-datasheets-7915.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 3.3W Tc | 1.7A | 0.12Ohm | 17 pF | N-Channel | 344pF @ 15V | 120m Ω @ 3.8A, 10V | 2.5V @ 250μA | 1.7A Tc | 5.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2398ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq2398est1ge3-datasheets-7913.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2W Tc | 1.6A | 0.3Ohm | 12 pF | N-Channel | 152pF @ 50V | 300m Ω @ 1.5A, 10V | 3.5V @ 250μA | 1.6A Tc | 3.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6630A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/sparkfunelectronics-prt11214-datasheets-3155.pdf | 30V | 6.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 38mOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 5 ns | 8ns | 13 ns | 17 ns | 6.5A | 20V | 30V | SILICON | SWITCHING | 1.7V | 2.5W Ta | 30V | N-Channel | 460pF @ 15V | 1.7 V | 38m Ω @ 6.5A, 10V | 3V @ 250μA | 6.5A Ta | 7nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| FDS8878 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds8878-datasheets-7954.pdf | 30V | 10.2A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 14MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 9 ns | 29ns | 18 ns | 45 ns | 10.2A | 20V | SILICON | SWITCHING | 2.5V | 2.5W Ta | 57 mJ | 30V | N-Channel | 897pF @ 15V | 2.5 V | 14m Ω @ 10.2A, 10V | 2.5V @ 250μA | 10.2A Ta | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| AONR21321 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 18 Weeks | 30V | 4.1W Ta 24W Tc | P-Channel | 1180pF @ 15V | 16.5m Ω @ 12A, 10V | 2.3V @ 250μA | 24A Tc | 34nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17381F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 350μm | 635μm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | ULTRA LOW RESISTANCE | BOTTOM | NO LEAD | 260 | CSD17381 | 1 | Single | NOT SPECIFIED | 1 | 3.4 ns | 1.4ns | 3.6 ns | 10.8 ns | 3.1A | 12V | SILICON | DRAIN | SWITCHING | 850mV | 500mW Ta | 0.25Ohm | 2.9 pF | 30V | N-Channel | 195pF @ 15V | 109m Ω @ 500mA, 8V | 1.1V @ 250μA | 3.1A Ta | 1.35nC @ 4.5V | 1.8V 4.5V | |||||||||||||||||||||||||||||||||||||
| RZF020P01TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | 3-SMD, Flat Lead | 2mm | 770μm | 1.7mm | Lead Free | 3 | 16 Weeks | 105MOhm | 3 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 3 | 1 | Single | 10 | 1 | Other Transistors | 10 ns | 17ns | 35 ns | 65 ns | 2A | 10V | SILICON | SWITCHING | 12V | 800mW Ta | 2A | P-Channel | 770pF @ 6V | 105m Ω @ 2A, 4.5V | 1V @ 1mA | 2A Ta | 6.5nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| SI7121ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7121dnt1ge3-datasheets-5243.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | Unknown | 12.5mOhm | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | SI7121 | 1 | Single | 30 | 1 | S-PDSO-F5 | 38 ns | 34ns | 10 ns | 24 ns | -18A | 25V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 3.5W Ta 27.8W Tc | 50A | -30V | P-Channel | 1870pF @ 15V | 15m Ω @ 7A, 10V | 2.5V @ 250μA | 12A Ta | 50nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| SI2304BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2304bdst1ge3-datasheets-5031.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 70mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 7.5 ns | 12.5ns | 12.5 ns | 19 ns | 3.2A | 20V | SILICON | SWITCHING | 1.5V | 750mW Ta | 2.6A | 30V | N-Channel | 225pF @ 15V | 1.5 V | 70m Ω @ 2.5A, 10V | 3V @ 250μA | 2.6A Ta | 4nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| DMP2123LQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp2123lq13-datasheets-7935.pdf | TO-236-3, SC-59, SOT-23-3 | 15 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3A | 20V | 1.4W Ta | P-Channel | 443pF @ 16V | 72m Ω @ 3.5A, 4.5V | 1.25V @ 250μA | 3A Ta | 7.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J168F,LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3j168flf-datasheets-7593.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 60V | 1.2W Ta | P-Channel | 82pF @ 10V | 1.9 Ω @ 100mA, 4.5V | 2V @ 1mA | 400mA Ta | 3nC @ 10V | 4V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLTS6342TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irlts6342trpbf-datasheets-7625.pdf | SOT-23-6 | 3mm | 1.3mm | 1.75mm | Lead Free | 6 | 12 Weeks | No SVHC | 17.5MOhm | 6 | EAR99 | No | DUAL | GULL WING | Single | 2W | 1 | FET General Purpose Power | 5.4 ns | 11ns | 15 ns | 32 ns | 8.3A | 12V | SILICON | SWITCHING | 2W Ta | 20 ns | 30V | N-Channel | 1010pF @ 25V | -400 mV | 17.5m Ω @ 8.3A, 4.5V | 1.1V @ 10μA | 8.3A Ta | 11nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IPW65R019C7FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r019c7fksa1-datasheets-7646.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 446W | 1 | 30 ns | 27ns | 5 ns | 106 ns | 75A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 446W Tc | 496A | N-Channel | 9900pF @ 400V | 19m Ω @ 58.3A, 10V | 4V @ 2.92mA | 75A Tc | 215nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPN50R2K0CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipn50r2k0ceatma1-datasheets-7695.pdf | SOT-223-3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 3.6A | 500V | 3V | 5W Tc | N-Channel | 124pF @ 100V | 2 Ω @ 600mA, 13V | 3.5V @ 50μA | 3.6A Tc | 6nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 30V | 3.1W Ta | P-Channel | 1180pF @ 15V | 17m Ω @ 11A, 10V | 2.3V @ 250μA | 11A Ta | 34nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN50R3K0CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipn50r3k0ceatma1-datasheets-7655.pdf | SOT-223-3 | 3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 3V | 5W Tc | 3Ohm | N-Channel | 84pF @ 100V | 3 Ω @ 400mA, 13V | 3.5V @ 30μA | 2.6A Tc | 4.3nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CPH6442-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-cph6442tle-datasheets-7380.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | ESD PROTECTED | Tin | not_compliant | e6 | DUAL | GULL WING | 1 | R-PDSO-G6 | 12 ns | 18ns | 35 ns | 80 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 1.6W Ta | 6A | 24A | 0.043Ohm | N-Channel | 1040pF @ 20V | 43m Ω @ 3A, 10V | 2.6V @ 1mA | 6A Ta | 20nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTD14N03RT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntd14n03r1g-datasheets-7738.pdf | 25V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 10 Weeks | 130MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 1.56W | 1 | FET General Purpose Power | R-PSSO-G2 | 3.8 ns | 27ns | 27 ns | 9.6 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1.04W Ta 20.8W Tc | 28A | 25V | N-Channel | 115pF @ 20V | 95m Ω @ 5A, 10V | 2V @ 250μA | 2.5A Ta | 1.8nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AO4406A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | 13A | 30V | 3.1W Ta | N-Channel | 910pF @ 15V | 11.5m Ω @ 12A, 10V | 2.5V @ 250μA | 13A Ta | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT020N10N3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipt020n10n3atma1-datasheets-7156.pdf | 8-PowerSFN | 2.4mm | Contains Lead | 8 | 18 Weeks | 8 | EAR99 | ULTRA LOW RESISTANCE | PG-HSOF-8 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | FLAT | 260 | 1 | 40 | 375W | 1 | 175°C | 34 ns | 84 ns | 300A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 2V | 375W Tc | 0.02Ohm | 100V | N-Channel | 11200pF @ 50V | 2m Ω @ 150A, 10V | 3.5V @ 272μA | 300A Tc | 156nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTK170P10P | IXYS | $17.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtx170p10p-datasheets-0670.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 170A | 20V | SILICON | DRAIN | SWITCHING | 100V | 890W Tc | 510A | 0.012Ohm | 3500 mJ | -100V | P-Channel | 12600pF @ 25V | 12m Ω @ 500mA, 10V | 4V @ 1mA | 170A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI2347DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2347dst1ge3-datasheets-7502.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.7W | 1 | Other Transistors | 150°C | 6ns | 9 ns | 19 ns | 5A | 20V | SILICON | SWITCHING | 30V | -2.5V | 1.7W Tc | 5A | 0.042Ohm | -30V | P-Channel | 705pF @ 15V | 42m Ω @ 3.8A, 10V | 2.5V @ 250μA | 5A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PMV50EPEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmv50epear-datasheets-7458.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | TO-236AB | 30V | 310mW Ta 455mW Tc | 35mOhm | P-Channel | 793pF @ 15V | 45mOhm @ 4.2A, 10V | 3V @ 250μA | 4.2A Ta | 19.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW20NM60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp20nm60-datasheets-1689.pdf | 650V | 20A | TO-247-3 | 50.8mm | 6.35mm | 6.35mm | Lead Free | 3 | 16 Weeks | 4.535924g | No SVHC | 290mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW20N | 3 | Single | 192W | 1 | FET General Purpose Power | 25 ns | 20ns | 11 ns | 42 ns | 20A | 30V | SILICON | SWITCHING | 4V | 192W Tc | 80A | 650 mJ | 600V | N-Channel | 1500pF @ 25V | 290m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTL2N450 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixtl2n450-datasheets-7451.pdf | ISOPLUSi5-Pak™ | 24 Weeks | 3 | unknown | Single | 220W | 1 | 38ns | 205 ns | 100 ns | 2A | 20V | 4500V | 220W Tc | 4.5kV | N-Channel | 6900pF @ 25V | 23 Ω @ 1A, 10V | 6V @ 250μA | 2A Tc | 156nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2046U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn2046u13-datasheets-7358.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 3.4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 760mW Ta | 0.072Ohm | N-Channel | 292pF @ 10V | 72m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 3.4A Ta | 3.8nC @ 4.5V | 2.5V 4.5V | ±12V |
