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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SSM3K16FU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k16fulf-datasheets-7326.pdf | SC-70, SOT-323 | 12 Weeks | unknown | 100mA | 20V | 150mW Ta | N-Channel | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA Ta | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN210N30X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn210n30x3-datasheets-7329.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 300V | 695W Tc | N-Channel | 24200pF @ 25V | 4.6m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 375nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN300N20X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn300n20x3-datasheets-7332.pdf | SOT-227-4, miniBLOC | 19 Weeks | 200V | 695W Tc | N-Channel | 23800pF @ 25V | 3.5m Ω @ 150A, 10V | 4.5V @ 8mA | 300A Tc | 375nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-FC420SA10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Chassis Mount | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/vishaysemiconductordiodesdivision-vsfc420sa10-datasheets-7339.pdf | SOT-227-4, miniBLOC | 20 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100V | 652W Tc | N-Channel | 17300pF @ 25V | 2.15m Ω @ 200A, 10V | 3.8V @ 750μA | 435A Tc | 375nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN132N50P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfn132n50p3-datasheets-7340.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 20 Weeks | 39mOhm | 4 | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 1.5kW | 1 | FET General Purpose Power | Not Qualified | 44 ns | 9ns | 8 ns | 72 ns | 112A | 30V | SILICON | ISOLATED | SWITCHING | 1500W Tc | 330A | 3000 mJ | 500V | N-Channel | 18600pF @ 25V | 39m Ω @ 66A, 10V | 5V @ 8mA | 112A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN80N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfn80n50p-datasheets-7345.pdf | 500V | 80A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.07mm | Lead Free | 4 | 55MOhm | 4 | yes | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 700W | 1 | Not Qualified | 25 ns | 27ns | 18 ns | 70 ns | 66A | 30V | SILICON | ISOLATED | SWITCHING | 700W Tc | 200A | 3000 mJ | 500V | N-Channel | 12700pF @ 25V | 65m Ω @ 500mA, 10V | 5V @ 8mA | 66A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFN520N075T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Chassis Mount, Screw | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn520n075t2-datasheets-7296.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 20 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | 200A | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 940W | 1 | FET General Purpose Power | 75V | 480A | 48 ns | 36ns | 35 ns | 80 ns | 480A | 5V | SILICON | ISOLATED | SWITCHING | 940W Tc | 3000 mJ | 75V | N-Channel | 41000pF @ 25V | 1.9m Ω @ 100A, 10V | 5V @ 8mA | 480A Tc | 545nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTT16N20D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/ixys-ixth16n20d2-datasheets-7254.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 695W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130ns | 135 ns | 270 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 695W Tc | 0.073Ohm | 200V | N-Channel | 5500pF @ 25V | 73m Ω @ 8A, 0V | 16A Tc | 208nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ461EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj461ept1ge3-datasheets-6753.pdf | PowerPAK® SO-8 | 1.14mm | 12 Weeks | 1 | 83W | 175°C | PowerPAK® SO-8 | 16 ns | 70 ns | -30A | 20V | 60V | -2V | 83W Tc | -60V | P-Channel | 4710pF @ 30V | 16mOhm @ 14.4A, 10V | 2.5V @ 250μA | 30A Tc | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN60N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn60n80p-datasheets-7307.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 30 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 1.04kW | 1 | 36 ns | 29ns | 26 ns | 110 ns | 53A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 1040W Tc | 250A | 5000 mJ | 800V | N-Channel | 18000pF @ 25V | 140m Ω @ 30A, 10V | 5V @ 8mA | 53A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTH90P10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtt90p10p-datasheets-8682.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 25MOhm | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 462W | 1 | Other Transistors | R-PSFM-T3 | 90A | 20V | SILICON | DRAIN | SWITCHING | 100V | 462W Tc | 225A | 2500 mJ | -100V | P-Channel | 5800pF @ 25V | 25m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ52P10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtq52p10p-datasheets-8938.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 50MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | 29ns | 22 ns | 38 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | -100V | P-Channel | 2845pF @ 25V | 50m Ω @ 500mA, 10V | 4.5V @ 250μA | 52A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTH16N20D2 | IXYS | $9.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth16n20d2-datasheets-7254.pdf | TO-247-3 | Lead Free | 3 | 24 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 695W Tc | 0.073Ohm | N-Channel | 5500pF @ 25V | 73m Ω @ 8A, 0V | 16A Tc | 208nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP310N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp310n10f7-datasheets-7256.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 2.7MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Tin (Sn) | STP310 | Single | 315W | 1 | FET General Purpose Power | 62 ns | 108ns | 40 ns | 148 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 3.5V | 315W Tc | TO-220AB | 720A | 100V | N-Channel | 12800pF @ 25V | 2.7m Ω @ 60A, 10V | 3.8V @ 250μA | 180A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STW77N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw77n65m5-datasheets-7269.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | No SVHC | 38mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STW77N | 3 | Single | 400W | 1 | FET General Purpose Power | 22ns | 20 ns | 69A | 25V | SILICON | SWITCHING | 4V | 400W Tc | 276A | 2000 mJ | 650V | N-Channel | 9800pF @ 100V | 38m Ω @ 34.5A, 10V | 5V @ 250μA | 69A Tc | 200nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRF4905STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf4905s-datasheets-3358.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 3 | EAR99 | Tin | No | GULL WING | 1 | Single | 17W | 1 | Other Transistors | R-PSSO-G2 | 20 ns | 99ns | 64 ns | 51 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 55V | 200W Tc | 280A | 0.02Ohm | -55V | P-Channel | 3500pF @ 25V | 20m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTP10P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixta10p50ptrl-datasheets-0774.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | 1Ohm | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | Other Transistors | R-PSFM-T3 | 28ns | 44 ns | 52 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | TO-220AB | 30A | -500V | P-Channel | 2840pF @ 25V | 1 Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 50nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPA20N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spa20n60c3xksa1-datasheets-7285.pdf | 650V | 20.7A | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | 3 | yes | AVALANCHE RATED | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 34.5W | 1 | 10 ns | 5ns | 4.5 ns | 67 ns | 20.7A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34.5W Tc | TO-220AB | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfh24n50-datasheets-4823.pdf | 500V | 26A | TO-247-3 | Lead Free | 3 | 8 Weeks | Unknown | 200mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 30 ns | 65 ns | 26A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 250 ns | 500V | N-Channel | 4200pF @ 25V | 4 V | 200m Ω @ 13A, 10V | 4V @ 4mA | 26A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF3805STRL-7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf3805s7ppbf-datasheets-1150.pdf | 55V | 160A | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.3378mm | 4.5466mm | 15.2908mm | Lead Free | 6 | 12 Weeks | No SVHC | 2.6MOhm | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | GULL WING | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G6 | 23 ns | 130ns | 52 ns | 80 ns | 240A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 68 ns | 680 mJ | 55V | N-Channel | 7820pF @ 25V | 4 V | 2.6m Ω @ 140A, 10V | 4V @ 250μA | 160A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| EPC2021 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2021engr-datasheets-3897.pdf | Die | 12 Weeks | Die | 1.65nF | 90A | 80V | N-Channel | 1650pF @ 40V | 2.5mOhm @ 29A, 5V | 2.5V @ 14mA | 90A Ta | 15nC @ 5V | 2.5 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB107N20N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp110n20n3gxksa1-datasheets-2473.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | 2 | 13 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | 1 | NOT SPECIFIED | 300mW | 1 | 175°C | R-PSSO-G2 | 18 ns | 26ns | 11 ns | 41 ns | 88A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 560 mJ | 200V | N-Channel | 7100pF @ 100V | 10.7m Ω @ 88A, 10V | 4V @ 270μA | 88A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NVMTS0D4N04CTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmts0d4n04ctxg-datasheets-6985.pdf | 8-PowerTDFN | 39 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 5W | N-Channel | 16500pF @ 20V | 0.45m Ω @ 50A, 10V | 4V @ 250μA | 79.8A Ta 558A Tc | 251nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP260NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfp260npbf-datasheets-7214.pdf&product=infineontechnologies-irfp260npbf-10056941 | 200V | 50A | TO-247-3 | 15.875mm | 20.2946mm | 5.3mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 40mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | Single | 30 | 300W | 1 | FET General Purpose Power | 17 ns | 60ns | 48 ns | 55 ns | 50A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AC | 402 ns | 200A | 560 mJ | 200V | N-Channel | 4057pF @ 25V | 4 V | 40m Ω @ 28A, 10V | 4V @ 250μA | 50A Tc | 234nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB017N10N5LFATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb017n10n5lfatma1-datasheets-7147.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 4.5mm | 6 | 13 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 313W | 1 | 150°C | R-PSSO-G6 | 7 ns | 128 ns | 31A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 313W Tc | 720A | 979 mJ | 100V | N-Channel | 840pF @ 50V | 1.7m Ω @ 100A, 10V | 4.1V @ 270μA | 180A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH023N65S3-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch023n65s3f155-datasheets-7232.pdf | TO-247-3 | Lead Free | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 75A | 650V | 4.5V | 595W Tc | N-Channel | 7160pF @ 400V | 23m Ω @ 37.5A, 10V | 4.5V @ 7.5mA | 75A Tc | 222nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDL100N50F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdl100n50f-datasheets-7244.pdf | TO-264-3, TO-264AA | 20mm | 29mm | 5mm | 3 | 8 Weeks | 6.756g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | 260 | 1 | Single | 30 | 2.5kW | 1 | FET General Purpose Power | Not Qualified | 150°C | 63 ns | 186ns | 105 ns | 202 ns | 100A | 30V | SILICON | SWITCHING | 3V | 2500W Tc | 400A | 0.055Ohm | 5000 mJ | 500V | N-Channel | 12000pF @ 25V | 55m Ω @ 50A, 10V | 5V @ 250μA | 100A Tc | 238nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP13N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount, Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu13n65m2-datasheets-2291.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP13N | Single | NOT SPECIFIED | FET General Purpose Power | 11 ns | 38 ns | 10A | 25V | 650V | 110W Tc | N-Channel | 590pF @ 100V | 430m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB048N15N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb048n15n5atma1-datasheets-7055.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | yes | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 300W Tc | 120A | 480A | 0.0048Ohm | 230 mJ | N-Channel | 7800pF @ 75V | 4.8m Ω @ 60A, 10V | 4.6V @ 264μA | 120A Tc | 100nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA44P15T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtp44p15t-datasheets-5534.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 150V | 298W Tc | P-Channel | 13400pF @ 25V | 65m Ω @ 22A, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V |
