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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP80NF03L-04 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp80nf03l-datasheets-5480.pdf | 30V | 80A | TO-220-3 | 10.4mm | 19.68mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.5MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | STP80N | 3 | 1 | Single | 300W | 1 | FET General Purpose Power | 175°C | 30 ns | 270ns | 95 ns | 110 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 300W Tc | TO-220AB | 30V | N-Channel | 5500pF @ 25V | 4.5m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 110nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB65R110CFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r110cfdxksa1-datasheets-4596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 18 Weeks | No SVHC | 3 | no | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 1 | R-PSSO-G2 | 16 ns | 11ns | 6 ns | 68 ns | 31.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 277.8W Tc | 99.6A | 845 mJ | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3805STRL-7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf3805s7ppbf-datasheets-1150.pdf | 55V | 160A | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.3378mm | 4.5466mm | 15.2908mm | Lead Free | 6 | 12 Weeks | No SVHC | 2.6MOhm | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | GULL WING | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G6 | 23 ns | 130ns | 52 ns | 80 ns | 240A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 68 ns | 680 mJ | 55V | N-Channel | 7820pF @ 25V | 4 V | 2.6m Ω @ 140A, 10V | 4V @ 250μA | 160A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF740ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/vishaysiliconix-irf740alpbf-datasheets-5440.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 550mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 4V | 3.1W Ta 125W Tc | 550mOhm | N-Channel | 1030pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-irl640a-datasheets-6916.pdf | 200V | 18A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 8 Weeks | 1.8g | No SVHC | 180mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Single | 110W | 1 | FET General Purpose Power | 11 ns | 8ns | 15 ns | 46 ns | 18A | 20V | SILICON | SWITCHING | 2V | 110W Tc | TO-220AB | 64 mJ | 200V | N-Channel | 1705pF @ 25V | 2 V | 180m Ω @ 9A, 5V | 2V @ 250μA | 18A Tc | 56nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFS3107TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs31077ppbf-datasheets-0853.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 12 Weeks | No SVHC | 7 | No | 370W | 1 | FET General Purpose Power | 17 ns | 80ns | 64 ns | 100 ns | 240A | 20V | Single | 4V | 370W Tc | 260A | 75V | N-Channel | 9200pF @ 50V | 2.6m Ω @ 160A, 10V | 4V @ 250μA | 240A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT004N03LATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipt004n03latma1-datasheets-6952.pdf | 8-PowerSFN | Contains Lead | 2 | 18 Weeks | No SVHC | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | FLAT | 300W | 1 | R-PSSO-F2 | 30 ns | 17ns | 37 ns | 149 ns | 300A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2V | 3.8W Ta 300W Tc | 0.0005Ohm | N-Channel | 24000pF @ 15V | 0.4m Ω @ 150A, 10V | 2.2V @ 250μA | 300A Tc | 163nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFP240PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp240-datasheets-7426.pdf | 200V | 20A | TO-247-3 | 15.87mm | 25.11mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 180mOhm | 3 | 5.45mm | No | 1 | Single | 150W | 1 | 150°C | TO-247-3 | 1.3nF | 14 ns | 51ns | 36 ns | 45 ns | 20A | 20V | 200V | 200V | 4V | 150W Tc | 610 ns | 180mOhm | 200V | N-Channel | 1300pF @ 25V | 4 V | 180mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 70nC @ 10V | 180 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NVMFS5A160PLZWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-nvmfs5a160plzwft3g-datasheets-8931.pdf | 8-PowerTDFN, 5 Leads | 1.1mm | 5 | 41 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 1 | 10 | 3.8W | 1 | 175°C | R-PDSO-F5 | 50 ns | 645 ns | -15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 3.8W Ta 200W Tc | 400A | 335 mJ | -60V | P-Channel | 7700pF @ 20V | 7.7m Ω @ 50A, 10V | 2.6V @ 1mA | 15A Ta 100A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF1405PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1405pbf-datasheets-7003.pdf | 55V | 169A | TO-220-3 | 10.668mm | 19.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 5.3mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | 1 | Single | 330W | 1 | FET General Purpose Power | 175°C | 13 ns | 190ns | 110 ns | 130 ns | 169A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 330W Tc | TO-220AB | 130 ns | 75A | 680A | 560 mJ | 55V | N-Channel | 5480pF @ 25V | 4 V | 5.3m Ω @ 101A, 10V | 4V @ 250μA | 169A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPB017N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb017n06n3gatma1-datasheets-6784.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 13 Weeks | 7 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 7 | NOT SPECIFIED | 250W | 1 | Not Qualified | R-PSSO-G6 | 41 ns | 80ns | 24 ns | 79 ns | 180A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 634 mJ | N-Channel | 23000pF @ 30V | 1.7m Ω @ 100A, 10V | 4V @ 196μA | 180A Tc | 275nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDMT80080DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmt80080dc-datasheets-6926.pdf | 8-PowerVDFN | Lead Free | 27 Weeks | 248.52072mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 254A | 80V | 3.2W Ta 156W Tc | N-Channel | 20720pF @ 40V | 1.35m Ω @ 36A, 10V | 4V @ 250μA | 36A Ta 254A Tc | 273nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF4905LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf4905strrpbf-datasheets-8724.pdf | -55V | -74A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 200W | 1 | Other Transistors | 20 ns | 99ns | 64 ns | 51 ns | -74A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 170W Tc | 42A | 280A | 0.02Ohm | -55V | P-Channel | 3500pF @ 25V | 4 V | 20m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STH315N10F7-6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth315n10f72-datasheets-8819.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 6 | 1.59999g | No SVHC | 7 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW RESISTANCE | GULL WING | NOT SPECIFIED | STH315 | 1 | Single | NOT SPECIFIED | 315W | 1 | R-PSSO-G6 | 62 ns | 108ns | 40 ns | 148 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 3.5V | 315W Tc | 0.0023Ohm | 100V | N-Channel | 12800pF @ 25V | 2.3m Ω @ 60A, 10V | 4.5V @ 250μA | 180A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQM120P04-04L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120p0404lge3-datasheets-6730.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 40V | 375W Tc | P-Channel | 13980pF @ 20V | 4mOhm @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 330nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD18N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb18n65m5-datasheets-7378.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | 220mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | GULL WING | 260 | STD18 | Single | 110W | 1 | R-PSSO-G2 | 36 ns | 7ns | 9 ns | 9 ns | 15A | 25V | SILICON | DRAIN | SWITCHING | 110W Tc | 60A | 650V | N-Channel | 1240pF @ 100V | 220m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 31nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz44npbf-datasheets-6582.pdf | 55V | 49A | TO-220-3 | 10.668mm | 8.77mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 17.5MOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | 250 | Single | 30 | 83W | 1 | FET General Purpose Power | 12 ns | 60ns | 45 ns | 44 ns | 49A | 20V | 55V | SILICON | DRAIN | SWITCHING | 2.1V | 94W Tc | TO-220AB | 95 ns | 55V | N-Channel | 1470pF @ 25V | 2.1 V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF540NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf540npbf-datasheets-6592.pdf | 100V | 27A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 44MOhm | 3 | 2.54mm | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 250 | Single | 30 | 130W | 1 | FET General Purpose Power | 11 ns | 35ns | 35 ns | 39 ns | 33A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 130W Tc | TO-220AB | 170 ns | 100V | N-Channel | 1960pF @ 25V | 4 V | 44m Ω @ 16A, 10V | 4V @ 250μA | 33A Tc | 71nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDMS86163P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms86163p-datasheets-6604.pdf | 8-PowerTDFN | 5mm | 1.1mm | 5.85mm | 5 | 16 Weeks | 68.1mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | not_compliant | e3 | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 104W | 1 | Other Transistors | 150°C | R-PDSO-F5 | 17 ns | 8.8ns | 6.9 ns | 33 ns | -50A | 25V | SILICON | DRAIN | SWITCHING | 100V | -2.8V | 2.5W Ta 104W Tc | MO-240AA | 7.9A | 0.022Ohm | -100V | P-Channel | 4085pF @ 50V | 22m Ω @ 7.9A, 10V | 4V @ 250μA | 7.9A Ta 50A Tc | 59nC @ 10V | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||
| IRF7842TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7842pbf-datasheets-6863.pdf | 40V | 18A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 5MOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | 1 | Single | 2.5W | 1 | FET General Purpose Power | 150°C | 2.5A | 14 ns | 12ns | 5 ns | 21 ns | 18A | 20V | 40V | SILICON | SWITCHING | 2.25V | 2.5W Ta | 150 ns | 40V | N-Channel | 4500pF @ 20V | 2.25 V | 5m Ω @ 17A, 10V | 2.25V @ 250μA | 18A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF4905STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf4905strrpbf-datasheets-8724.pdf | -55V | -74A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.54mm | 4.83mm | 10.54mm | Contains Lead | 2 | 12 Weeks | No SVHC | 20mOhm | 3 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | Tin | No | D2Pak | e3 | GULL WING | 260 | 1 | Single | 30 | 3.8W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 20 ns | 99ns | 64 ns | 51 ns | -42A | 20V | -55V | SILICON | DRAIN | SWITCHING | 55V | -2V | 170W Tc | 92 ns | 280A | -55V | P-Channel | 3500pF @ 25V | -4 V | 20m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| STL130N8F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl130n8f7-datasheets-6671.pdf | 8-PowerVDFN | Lead Free | 5 | 3.6mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | DUAL | FLAT | 260 | STL130 | 2 | 5W | 1 | R-PDSO-F5 | 123A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 135W Tc | 560A | 80V | N-Channel | 6340pF @ 40V | 3.6m Ω @ 13A, 10V | 4.5V @ 250μA | 130A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf5210lpbf-datasheets-8886.pdf | -100V | -40A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.83mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 60mOhm | 3 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 3.8W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 14 ns | 63ns | 55 ns | 72 ns | -40A | 20V | 100V | SILICON | DRAIN | SWITCHING | -4V | 3.1W Ta 170W Tc | 260 ns | -100V | P-Channel | 2780pF @ 25V | -4 V | 60m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STB10NK60ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10nk60zfp-datasheets-5354.pdf | 600V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | No SVHC | 750mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB10N | 4 | Single | 30 | 115W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 20ns | 30 ns | 55 ns | 4.5A | 30V | 600V | SILICON | SWITCHING | 3.75V | 115W Tc | 600V | N-Channel | 1370pF @ 25V | 3.75 V | 750m Ω @ 4.5A, 10V | 4.5V @ 250μA | 10A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRF840PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf840-datasheets-7243.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 11 Weeks | 6.000006g | No SVHC | 3 | AVALANCHE RATED | Tin | No | e3 | 3 | 1 | Single | 125W | 1 | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | SILICON | SWITCHING | 4V | 125W Tc | TO-220AB | 970 ns | 8A | 0.85Ohm | 500V | N-Channel | 1300pF @ 25V | 4 V | 850m Ω @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| EPC2212 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc9126-datasheets-2873.pdf | Die | 14 Weeks | Die | 100V | N-Channel | 407pF @ 50V | 13.5mOhm @ 11A, 5V | 2.5V @ 3mA | 18A Ta | 4nC @ 5V | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4010TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfsl4010pbf-datasheets-3814.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 21 ns | 86ns | 77 ns | 100 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 375W Tc | 720A | 0.0047Ohm | 100V | N-Channel | 9575pF @ 50V | 4 V | 4.7m Ω @ 106A, 10V | 4V @ 250μA | 180A Tc | 215nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC220N20NSFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc220n20nsfdatma1-datasheets-6814.pdf | 8-PowerTDFN | 39 Weeks | 200V | 214W Tc | N-Channel | 3680pF @ 100V | 22m Ω @ 52A, 10V | 4V @ 137μA | 52A | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP36NF06L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb36nf06lt4-datasheets-8229.pdf | 60V | 30A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 32mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP36N | 3 | Single | 70W | 1 | FET General Purpose Power | 10 ns | 80ns | 13 ns | 19 ns | 30A | 18V | SILICON | DRAIN | SWITCHING | 2.5V | 70W Tc | TO-220AB | 225 mJ | 60V | N-Channel | 660pF @ 25V | 40m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 17nC @ 5V | 5V 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||
| IRF9540NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf9540nlpbf-datasheets-3671.pdf | -100V | -23A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 117mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | 23A | e3 | 100V | GULL WING | 260 | 1 | Single | 30 | 3.8W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 13 ns | 67ns | 51 ns | 40 ns | -23A | 20V | 100V | SILICON | DRAIN | SWITCHING | -4V | 3.1W Ta 110W Tc | 210 ns | 84 mJ | -100V | P-Channel | 1450pF @ 25V | -4 V | 117m Ω @ 14A, 10V | 4V @ 250μA | 23A Tc | 110nC @ 10V | 10V | ±20V |
