Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDMS86182 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdms86182-datasheets-6195.pdf | 8-PowerTDFN | 20 Weeks | 68.1mg | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 100V | 83W Tc | N-Channel | 2635pF @ 50V | 7.2m Ω @ 28A, 10V | 4V @ 150μA | 78A Tc | 24nC @ 6V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ16DN25NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz16dn25ns3gatma1-datasheets-6361.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | 6 ns | 4ns | 11 ns | 10.9A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | 44A | 0.165Ohm | 120 mJ | N-Channel | 920pF @ 100V | 165m Ω @ 5.5A, 10V | 4V @ 32μA | 10.9A Tc | 11.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMS86103L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms86103l-datasheets-6427.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6.15mm | Lead Free | 5 | 6 Weeks | 68.1mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 13 ns | 7.2ns | 6 ns | 35 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 2.5W Ta 104W Tc | MO-240AA | 100V | N-Channel | 3710pF @ 50V | 8m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 49A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF530NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf530npbf-datasheets-6474.pdf | 100V | 17A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 90MOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | 250 | Single | 30 | 70W | 1 | FET General Purpose Power | 9.2 ns | 22ns | 25 ns | 35 ns | 17A | 20V | 100V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-220AB | 140 ns | 60A | 100V | N-Channel | 920pF @ 25V | 4 V | 90m Ω @ 9A, 10V | 4V @ 250μA | 17A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FDMC86570L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc86570l-datasheets-6443.pdf | 8-PowerWDFN | 3.4mm | 800μm | 3.4mm | 5 | 20 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | 1 | Single | 2.3W | 1 | FET General Purpose Power | 150°C | S-PDSO-N5 | 19 ns | 12ns | 10 ns | 38 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.3W Ta 54W Tc | MO-240BA | 56A | 200A | 0.0043Ohm | 253 mJ | 60V | N-Channel | 6705pF @ 30V | 4.3m Ω @ 18A, 10V | 3V @ 250μA | 18A Ta 56A Tc | 88nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF640NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irf640nstrlpbf-datasheets-9047.pdf | 200V | 18A | TO-220-3 | 10.668mm | 19.8mm | 4.826mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 150mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | 250 | 1 | Single | 30 | 150W | 1 | FET General Purpose Power | 175°C | 10 ns | 19ns | 5.5 ns | 23 ns | 18A | 20V | 200V | SILICON | DRAIN | SWITCHING | 2V | 150W Tc | TO-220AB | 241 ns | 72A | 247 mJ | 200V | N-Channel | 1160pF @ 25V | 4 V | 150m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7135DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7135dpt1ge3-datasheets-6548.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 3.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 6.25W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 25 ns | 100ns | 50 ns | 110 ns | -60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -3V | 6.25W Ta 104W Tc | -30V | P-Channel | 8650pF @ 15V | -3 V | 3.9m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 250nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR870ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir870adpt1ge3-datasheets-6229.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | e3 | DUAL | C BEND | 1 | Single | 104W | 1 | FET General Purpose Powers | 150°C | R-PDSO-C5 | 13 ns | 15ns | 9 ns | 35 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 3V | 6.25W Ta 104W Tc | 300A | 0.007Ohm | 100V | N-Channel | 2866pF @ 50V | 6.6m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF530PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-sihfr420age3-datasheets-4094.pdf | 100V | 14A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 160mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 670pF | 10 ns | 30ns | 20 ns | 23 ns | 14A | 20V | 100V | 100V | 4V | 88W Tc | 280 ns | 270mOhm | 100V | N-Channel | 670pF @ 25V | 4 V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC190N15NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc190n15ns3gatma1-datasheets-6565.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 1 | 125W | 1 | Not Qualified | 150°C | R-PDSO-F5 | 15 ns | 53ns | 6 ns | 25 ns | 50A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 125W Tc | 200A | 150V | N-Channel | 2420pF @ 75V | 19m Ω @ 50A, 10V | 4V @ 90μA | 50A Tc | 31nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF5305STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf5305strrpbf-datasheets-1721.pdf | -55V | -31A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 60mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 110W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 14 ns | 66ns | 63 ns | 39 ns | -31A | 20V | -55V | SILICON | DRAIN | SWITCHING | 55V | -4V | 3.8W Ta 110W Tc | TO-252 | 110 ns | 280 mJ | -55V | P-Channel | 1200pF @ 25V | -4 V | 60m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF6616TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf6616tr1pbf-datasheets-1417.pdf | 30V | 19A | DirectFET™ Isometric MX | 6.35mm | 508μm | 5.0546mm | Lead Free | 3 | 12 Weeks | No SVHC | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | R-XBCC-N3 | 15 ns | 19ns | 4.4 ns | 21 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.8W Ta 89W Tc | 36 mJ | 40V | N-Channel | 3765pF @ 20V | 5m Ω @ 19A, 10V | 2.25V @ 250μA | 19A Ta 106A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSC039N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc039n06nsatma1-datasheets-6329.pdf&product=infineontechnologies-bsc039n06nsatma1-10056811 | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 1 | 2.5W | 1 | 150°C | R-PDSO-F5 | 12 ns | 12ns | 7 ns | 20 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1V | 2.5W Ta 69W Tc | 400A | 0.0039Ohm | 44 pF | 50 mJ | 60V | N-Channel | 2000pF @ 30V | 3.9m Ω @ 50A, 10V | 2.8V @ 36μA | 19A Ta 100A Tc | 27nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFH5250TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfh5250tr2pbf-datasheets-4500.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 19 Weeks | No SVHC | 1.75MOhm | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 30 | 3.6W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N5 | 28 ns | 46ns | 19 ns | 30 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 3.6W Ta 160W Tc | 45A | 400A | 25V | N-Channel | 7174pF @ 13V | 1.8 V | 1.15m Ω @ 50A, 10V | 2.35V @ 150μA | 45A Ta 100A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STB100N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb100n6f7-datasheets-6165.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STB100N | NOT SPECIFIED | 100A | 60V | 125W Tc | N-Channel | 1980pF @ 25V | 5.6m Ω @ 50A, 10V | 4V @ 250μA | 100A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS7NF60L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts7nf60l-datasheets-6175.pdf | 60V | 7.5A | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 12 Weeks | No SVHC | 19.5mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | STS7N | 8 | 1 | 30 | 2.5W | 1 | FET General Purpose Power | 150°C | 15 ns | 27ns | 20 ns | 47 ns | 7.5A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 2.5W Tc | 30A | 350 mJ | 60V | N-Channel | 1700pF @ 25V | 1 V | 19.5m Ω @ 3.5A, 10V | 1V @ 250μA | 7.5A Tc | 34nC @ 4.5V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| SI7850DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7850dpt1ge3-datasheets-4691.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | Unknown | 22mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | FLAT | 8 | 1 | Single | 1.8W | 1 | 150°C | R-PDSO-F5 | 10 ns | 10ns | 10 ns | 25 ns | 6.2A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3V | 1.8W Ta | 40A | 60V | N-Channel | 74ns | 40ns | 3 V | 22m Ω @ 10.3A, 10V | 3V @ 250μA | 6.2A Ta | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| TK110A10PL,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk110a10pls4x-datasheets-4923.pdf | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF610STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3W | 1 | D2PAK | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 3W Ta 36W Tc | 1.5Ohm | N-Channel | 140pF @ 25V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK2K2A60F,S4X | Toshiba Semiconductor and Storage | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk2k2a60fs4x-datasheets-4730.pdf | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4620PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4620pbf-datasheets-4735.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 72.5MOhm | 3 | EAR99 | No | Single | 144W | 1 | FET General Purpose Power | 13.4 ns | 22.4ns | 14.8 ns | 25.4 ns | 25A | 20V | 200V | SILICON | SWITCHING | 3V | 144W Tc | TO-220AB | 200V | N-Channel | 1710pF @ 50V | 3 V | 72.5m Ω @ 15A, 10V | 5V @ 100μA | 25A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TK1K2A60F,S4X | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk1k2a60fs4x-datasheets-4267.pdf | TO-220-3 Full Pack | 12 Weeks | 600V | 35W Tc | N-Channel | 740pF @ 300V | 1.2 Ω @ 3A, 10V | 4V @ 630μA | 6A Ta | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB75NH02LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb75nh02lt4-datasheets-3972.pdf | 24V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB75N | 3 | Single | 30 | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 200ns | 25 ns | 18 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | 240A | 0.014Ohm | 24V | N-Channel | 2050pF @ 15V | 8m Ω @ 30A, 10V | 1.8V @ 250μA | 60A Tc | 22nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STP11NK40ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb11nk40zt4-datasheets-9727.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | STP11N | 3 | Single | 30W | 1 | FET General Purpose Power | 20 ns | 20ns | 18 ns | 40 ns | 9A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 9A | 0.55Ohm | 400V | N-Channel | 930pF @ 25V | 550m Ω @ 4.5A, 10V | 4.5V @ 100μA | 9A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPS60R360PFD7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Through Hole | -40°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 650V | 43W Tc | N-Channel | 534pF @ 400V | 360m Ω @ 2.9A, 10V | 4.5V @ 140μA | 10A Tc | 12.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF3N50NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdpf3n50nz-datasheets-4144.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 27W | 1 | FET General Purpose Power | 10 ns | 15ns | 17 ns | 26 ns | 3A | 25V | SILICON | ISOLATED | SWITCHING | 27W Tc | TO-220AB | 3A | 500V | N-Channel | 280pF @ 25V | 2.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 9nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF620STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620strlpbf-datasheets-3318.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 800mOhm | 3 | No | 1 | Single | 3W | 1 | D2PAK | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 3W Ta 50W Tc | 800mOhm | N-Channel | 260pF @ 25V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF4N60NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf4n60nz-datasheets-4183.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 7 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 28W | 1 | FET General Purpose Power | 12.7 ns | 15.1ns | 12.8 ns | 30.2 ns | 3.8A | 25V | SILICON | ISOLATED | SWITCHING | 28W Tc | TO-220AB | 600V | N-Channel | 510pF @ 25V | 2.5 Ω @ 1.9A, 10V | 5V @ 250μA | 3.8A Tc | 10.8nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| TK1K9A60F,S4X | Toshiba Semiconductor and Storage | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk1k9a60fs4x-datasheets-4196.pdf | TO-220-3 Full Pack | 12 Weeks | 600V | 30W Tc | N-Channel | 490pF @ 300V | 1.9 Ω @ 1.9A, 10V | 4V @ 400μA | 3.7A Ta | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM50034EL_GE3 | Vishay Siliconix | $2.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50034elge3-datasheets-4101.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 150W Tc | N-Channel | 6100pF @ 25V | 3.9mOhm @ 20A, 10V | 2.5V @ 250μA | 100A Tc | 90nC @ 10V | 4.5V 10V | ±20V |
