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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NDF05N50ZG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ndd05n50z1g-datasheets-4792.pdf | TO-220-3 Full Pack | 10.63mm | 16.12mm | 4.9mm | Lead Free | 3 | 17 Weeks | 4.535924g | No SVHC | 1.5Ohm | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 28W | 1 | FET General Purpose Powers | 11 ns | 15ns | 14 ns | 24 ns | 5A | 30V | SILICON | ISOLATED | 4.5V | 30W Tc | TO-220AB | 20A | 500V | N-Channel | 632pF @ 25V | 4.5 V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 5.5A Tc | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| NTB6448ANT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb6448ant4g-datasheets-5206.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | e3 | Tin (Sn) | 188W | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 188W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 76A | 500 mJ | N-Channel | 4500pF @ 25V | 13m Ω @ 76A, 10V | 4V @ 250μA | 80A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTB6448ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb6448ant4g-datasheets-5206.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | e3 | Tin (Sn) | 188W | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 188W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 76A | 500 mJ | N-Channel | 4500pF @ 25V | 13m Ω @ 76A, 10V | 4V @ 250μA | 80A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTMS4840NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntms4840nr2g-datasheets-5089.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 4 days ago) | yes | EAR99 | unknown | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 680mW Ta | 5.5A | 0.024Ohm | N-Channel | 520pF @ 15V | 24m Ω @ 6.9A, 10V | 3V @ 250μA | 4.5A Ta | 9.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLR8259PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlr8259trpbf-datasheets-8082.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | No SVHC | 8.7MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.4 ns | 38ns | 8.9 ns | 9.1 ns | 57A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.9V | 48W Tc | TO-252AA | 26 ns | 42A | 67 mJ | 25V | N-Channel | 900pF @ 13V | 1.9 V | 8.7m Ω @ 21A, 10V | 2.35V @ 25μA | 57A Tc | 10nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| BSS205NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss205nl6327htsa1-datasheets-4828.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 419pF | 2.5A | 20V | 500mW Ta | N-Channel | 419pF @ 10V | 50mOhm @ 2.5A, 4.5V | 1.2V @ 11μA | 2.5A Ta | 3.2nC @ 4.5V | 50 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4943NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs4943ntwg-datasheets-5120.pdf | 8-PowerWDFN | Lead Free | 5 | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | S-XDSO-N5 | 41A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 840mW Ta 22.3W Tc | 8A | 0.011Ohm | N-Channel | 1386pF @ 15V | 7.2m Ω @ 20A, 10V | 2.2V @ 250μA | 8A Ta 41A Tc | 20.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFH5250DTR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5250dtrpbf-datasheets-4676.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | 250W | 1 | 8-PQFN (5x6) | 706pF | 23 ns | 72ns | 24 ns | 23 ns | 100A | 20V | 25V | 1.8V | 41 ns | 2.2mOhm | 25V | N-Channel | 6115pF @ 13V | 1.8 V | 1.4mOhm @ 50A, 10V | 2.35V @ 150μA | 40A Ta 100A Tc | 83nC @ 10V | 1.4 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| NTD4913N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4913nt4g-datasheets-5003.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | 3 | 32A | 30V | 1.36W Ta 24W Tc | N-Channel | 1013pF @ 15V | 10.5m Ω @ 30A, 10V | 2.2V @ 250μA | 7.7A Ta 32A Tc | 13nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD6414AN-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntd6414ant4g-datasheets-5698.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | 37MOhm | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 100W | 1 | FET General Purpose Power | R-PSIP-T3 | 11 ns | 52ns | 48 ns | 38 ns | 32A | 20V | SILICON | DRAIN | 100W Tc | 100V | N-Channel | 1450pF @ 25V | 37m Ω @ 32A, 10V | 4V @ 250μA | 32A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTD4913N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4913nt4g-datasheets-5003.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | 4 | 32A | 30V | 1.36W Ta 24W Tc | N-Channel | 1013pF @ 15V | 10.5m Ω @ 30A, 10V | 2.2V @ 250μA | 7.7A Ta 32A Tc | 13nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4860NA-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4860nt4g-datasheets-0078.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 65A | 25V | 1.28W Ta 50W Tc | N-Channel | 1308pF @ 12V | 7.5m Ω @ 30A, 10V | 2.5V @ 250μA | 10.4A Ta 65A Tc | 21.8nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4945NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs4945ntwg-datasheets-5006.pdf | 8-PowerWDFN | Lead Free | 5 | 8 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 4.3W | 1 | Not Qualified | S-XDSO-N5 | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 890mW Ta 20W Tc | N-Channel | 1194pF @ 15V | 9m Ω @ 20A, 10V | 2.2V @ 250μA | 7.1A Ta 34A Tc | 17.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFH5302DTR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irfh5302dtrpbf-datasheets-4396.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | Single | 104W | 1 | PQFN (5x6) Single Die | 3.635nF | 16 ns | 30ns | 12 ns | 20 ns | 100A | 20V | 30V | 2.35V | 29 ns | 2.5mOhm | 30V | N-Channel | 3635pF @ 25V | 2.35 V | 2.5mOhm @ 50A, 10V | 2.35V @ 100μA | 29A Ta 100A Tc | 55nC @ 10V | 2.5 mΩ | |||||||||||||||||||||||||||||||||||||||||
| NTD4910N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntd4910nt4g-datasheets-5012.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 2.6W | 1 | 37A | 20V | SILICON | DRAIN | SWITCHING | 1.37W Ta 27.3W Tc | 8.2A | 152A | 30V | N-Channel | 1203pF @ 15V | 9m Ω @ 30A, 10V | 2.2V @ 250μA | 8.2A Ta 37A Tc | 15.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFH5304TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5304trpbf-datasheets-5943.pdf | 8-PowerVDFN | 5mm | 810μm | 5.0038mm | No SVHC | 8 | No | 3.6W | Single | 46W | 1 | 8-PQFN (5x6) | 1.65nF | 13 ns | 25ns | 6.6 ns | 12 ns | 79A | 20V | 30V | 2.35V | 29 ns | 4.5mOhm | 30V | N-Channel | 2360pF @ 10V | 2.35 V | 4.5mOhm @ 47A, 10V | 2.35V @ 50μA | 22A Ta 79A Tc | 41nC @ 10V | 4 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFH5020TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5020trpbf-datasheets-4642.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | No SVHC | 55MOhm | 8 | No | 3.6W | Single | 8.3W | 1 | 8-PQFN (5x6) | 2.29nF | 9.3 ns | 7.7ns | 6 ns | 21 ns | 43A | 20V | 200V | 5V | 69 ns | 55mOhm | 200V | N-Channel | 2290pF @ 100V | 5 V | 55mOhm @ 7.5A, 10V | 5V @ 150μA | 5.1A Ta | 54nC @ 10V | 55 mΩ | |||||||||||||||||||||||||||||||||||||||
| NTD4860NA-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4860nt4g-datasheets-0078.pdf | TO-251-3 Stub Leads, IPak | 65A | 25V | 1.28W Ta 50W Tc | N-Channel | 1308pF @ 12V | 7.5m Ω @ 30A, 10V | 2.5V @ 250μA | 10.4A Ta 65A Tc | 21.8nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD6416ANL-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd6416anlt4g-datasheets-2452.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 71W | 1 | R-PSFM-T3 | 7 ns | 16ns | 40 ns | 35 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 71W Tc | 70A | 50 mJ | 100V | N-Channel | 1000pF @ 25V | 74m Ω @ 19A, 10V | 2.2V @ 250μA | 19A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTD4910NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntd4910nt4g-datasheets-5012.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 4 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 11.6 ns | 16.5 ns | 37A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.37W Ta 27.3W Tc | 8.2A | 152A | 0.013Ohm | 25.3 mJ | N-Channel | 1203pF @ 15V | 9m Ω @ 30A, 10V | 2.2V @ 250μA | 8.2A Ta 37A Tc | 15.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRLR8256PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlr8256trpbf-datasheets-0064.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | No SVHC | 5.7MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 63W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.7 ns | 46ns | 8.5 ns | 12 ns | 81A | 20V | 25V | SILICON | DRAIN | SWITCHING | 1.8V | 63W Tc | TO-252AA | 29 ns | 86 mJ | 25V | N-Channel | 1470pF @ 13V | 1.8 V | 5.7m Ω @ 25A, 10V | 2.35V @ 25μA | 81A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| NTP6411ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntp6411ang-datasheets-5031.pdf | TO-220-3 | 10.28mm | 15.75mm | 4.82mm | Lead Free | 3 | 4.535924g | No SVHC | 14MOhm | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | No | e3 | Tin (Sn) | NO | 3 | Single | 217W | 1 | FET General Purpose Powers | 16 ns | 144ns | 157 ns | 107 ns | 72A | 20V | SILICON | DRAIN | 217W Tc | TO-220AB | 77A | 285A | 470 mJ | 100V | N-Channel | 3700pF @ 25V | 4 V | 14m Ω @ 72A, 10V | 4V @ 250μA | 77A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| NTP6413ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntb6413ant4g-datasheets-9074.pdf | TO-220-3 | 10.28mm | 15.75mm | 4.82mm | Lead Free | 3 | 4.535924g | No SVHC | 28MOhm | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 136W | 1 | FET General Purpose Power | 13 ns | 84ns | 71 ns | 52 ns | 42A | 20V | SILICON | DRAIN | 4V | 136W Tc | TO-220AB | 200 mJ | 100V | N-Channel | 1800pF @ 25V | 4 V | 28m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| NTTFS4941NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-nttfs4941ntag-datasheets-5037.pdf | 8-PowerWDFN | Lead Free | 5 | 8 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 1 | FET General Purpose Power | S-PDSO-F5 | 11 ns | 21ns | 3 ns | 19 ns | 46A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 840mW Ta 25.5W Tc | 0.009Ohm | N-Channel | 1619pF @ 15V | 6.2m Ω @ 20A, 10V | 2.2V @ 250μA | 8.3A Ta 46A Tc | 22.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTD6415AN-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntd6415an1g-datasheets-5039.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3 | 55MOhm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 4 | Single | 83W | 1 | R-PSIP-T3 | 10 ns | 37ns | 37 ns | 30 ns | 23A | 20V | SILICON | DRAIN | 83W Tc | 89A | 79 mJ | 100V | N-Channel | 700pF @ 25V | 55m Ω @ 23A, 10V | 4V @ 250μA | 23A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTB6412ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntp6412ang-datasheets-3391.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 167W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 140ns | 126 ns | 70 ns | 58A | 20V | SILICON | DRAIN | 100V | 4V | 167W Tc | 240A | N-Channel | 3500pF @ 25V | 4 V | 18.2m Ω @ 58A, 10V | 4V @ 250μA | 58A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTMFS4921NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4921nt3g-datasheets-4996.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 1 | Not Qualified | 58.5A | SILICON | DRAIN | SWITCHING | 30V | 30V | 870mW Ta 38.5W Tc | 0.0088A | 0.0108Ohm | N-Channel | 1400pF @ 12V | 6.95m Ω @ 30A, 10V | 2.5V @ 250μA | 8.8A Ta 58.5A Tc | 25nC @ 11.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDS8812NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds8812nz-datasheets-4222.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 2.5W Ta | N-Channel | 6925pF @ 15V | 4mOhm @ 20A, 10V | 3V @ 250μA | 20A Ta | 126nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB6413ANG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntb6413ant4g-datasheets-9074.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 4.535924g | No SVHC | 28MOhm | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 136W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 84ns | 71 ns | 52 ns | 42A | 20V | SILICON | DRAIN | 100V | 136W Tc | 200 mJ | N-Channel | 1800pF @ 25V | 4 V | 28m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| NTD4913NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntd4913nt4g-datasheets-5003.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | SINGLE | GULL WING | 260 | 4 | 40 | 2.5W | 1 | R-PSSO-G2 | 10 ns | 21ns | 2.3 ns | 14.7 ns | 10.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.36W Ta 24W Tc | 7.7A | 22 mJ | N-Channel | 1013pF @ 15V | 10.5m Ω @ 30A, 10V | 2.2V @ 250μA | 7.7A Ta 32A Tc | 13nC @ 10V | 4.5V 10V | ±20V |
