Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STSJ60NH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stsj60nh3ll-datasheets-3999.pdf | 30V | 15A | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Lead Free | 8 | 4mOhm | EAR99 | LOW THRESHOLD | e4 | NICKEL PALLADIUM GOLD | DUAL | GULL WING | 260 | STSJ60 | 8 | 30 | 50W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | 65ns | 20 ns | 38 ns | 15A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3W Ta 50W Tc | 60A | 60A | 30V | N-Channel | 1810pF @ 25V | 5.7m Ω @ 7.5A, 10V | 1V @ 250μA | 60A Tc | 24nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| STF5N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu5n52k3-datasheets-4415.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.5Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF5N | 3 | Single | 25W | 1 | FET General Purpose Power | 9 ns | 11ns | 16 ns | 29 ns | 4.4A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 25W Tc | TO-220AB | 525V | N-Channel | 545pF @ 100V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STB4NK60Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk60zt4-datasheets-6401.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STB4N | 3 | Single | 70W | 1 | FET General Purpose Power | 12 ns | 9.5ns | 16.5 ns | 29 ns | 4A | 30V | SILICON | SWITCHING | 70W Tc | 4A | 16A | 2Ohm | 120 mJ | 600V | N-Channel | 510pF @ 25V | 2 Ω @ 2A, 10V | 4.5V @ 50μA | 4A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| GA05JT03-46 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga05jt0346-datasheets-4010.pdf | TO-46-3 | 18 Weeks | 3 | 9A | 300V | 20W Tc | 240m Ω @ 5A | 9A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA68N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa68n60m6-datasheets-4016.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STWA68 | NOT SPECIFIED | 600V | 390W Tc | N-Channel | 4360pF @ 100V | 41m Ω @ 31.5A, 10V | 4.75V @ 250μA | 63A Tc | 106nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBF20GPBF | Vishay Siliconix | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfibf20g-datasheets-8627.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 8Ohm | 3 | No | 1 | Single | 30W | 1 | TO-220-3 | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.2A | 20V | 900V | 4V | 30W Tc | 8Ohm | N-Channel | 490pF @ 25V | 4 V | 8Ohm @ 720mA, 10V | 4V @ 250μA | 1.2A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF530STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | TO-263 (D2Pak) | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 3.7W Ta 88W Tc | 160mOhm | N-Channel | 670pF @ 25V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPS60R1K0PFD7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Through Hole | -40°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 650V | 26W Tc | N-Channel | 230pF @ 400V | 1 Ω @ 1A, 10V | 4.5V @ 50μA | 4.7A Tc | 6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD10PF06-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std10pf06t4-datasheets-5326.pdf | -60V | -10A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 200mOhm | 3 | yes | EAR99 | No | e3 | Tin (Sn) | 260 | STD10 | 3 | Single | 30 | 40W | 1 | Other Transistors | 20 ns | 40ns | 10 ns | 40 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 60V | 40W Tc | 40A | -60V | P-Channel | 850pF @ 25V | 200m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| APT5010JLLU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010jllu2-datasheets-3892.pdf | SOT-227-4, miniBLOC | 4 | 16 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 378W | 1 | FET General Purpose Power | 11 ns | 15ns | 3 ns | 25 ns | 41A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 378W Tc | N-Channel | 4360pF @ 25V | 100m Ω @ 23A, 10V | 5V @ 2.5mA | 41A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STW65N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw65n60dm6-datasheets-3895.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STW65N | NOT SPECIFIED | 600V | N-Channel | 38A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA65N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw65n60dm6-datasheets-3895.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STWA65 | NOT SPECIFIED | 600V | N-Channel | 38A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB260CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb260cic0g-datasheets-3899.pdf | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | 600V | 32.1W Tc | N-Channel | 1273pF @ 100V | 260m Ω @ 3.9A, 10V | 4V @ 250μA | 13A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT56F50B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt56f50l-datasheets-0540.pdf | TO-247-3 Variant | 3 | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 780W | 1 | 38 ns | 45ns | 33 ns | 100 ns | 56A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 780W Tc | TO-247AB | N-Channel | 8800pF @ 25V | 100m Ω @ 28A, 10V | 5V @ 2.5mA | 56A Tc | 220nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STW70N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa70n60dm6-datasheets-3868.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STW70N | NOT SPECIFIED | 600V | N-Channel | 62A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4K1A60F,S4X | Toshiba Semiconductor and Storage | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk4k1a60fs4x-datasheets-3916.pdf | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK35A65W,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk35a65ws5x-datasheets-3918.pdf | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | 70 ns | 30ns | 8 ns | 150 ns | 35A | 30V | 650V | 50W Tc | N-Channel | 4100pF @ 300V | 80m Ω @ 17.5A, 10V | 3.5V @ 2.1mA | 35A Ta | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK62J60W,S1VQ | Toshiba Semiconductor and Storage | $7.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk62j60ws1vq-datasheets-3930.pdf | TO-3P-3, SC-65-3 | 16 Weeks | 3 | No | Single | 400W | 1 | TO-3P(N) | 6.5nF | 58ns | 15 ns | 310 ns | 61.8A | 30V | 600V | 400W Tc | 33mOhm | 600V | N-Channel | 6500pF @ 300V | 38mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 61.8A Ta | 180nC @ 10V | Super Junction | 38 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| STE140NF20D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-ste140nf20d-datasheets-3933.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 12 Weeks | No SVHC | 10mOhm | 4 | ACTIVE (Last Updated: 7 months ago) | EAR99 | AVALANCHE ENERGY RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | STE1 | 4 | 500W | 1 | FET General Purpose Power | 232 ns | 218ns | 250 ns | 283 ns | 140A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 3V | 500W Tc | 560A | 800 mJ | 200V | N-Channel | 11100pF @ 25V | 3 V | 12m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 338nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFP72N20X3M | IXYS | $7.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp72n20x3m-datasheets-3937.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 200V | 36W Tc | N-Channel | 3780pF @ 25V | 20m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT94N60L2C3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 600V | 94A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 24 Weeks | 10.6g | 35mOhm | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | SINGLE | 3 | 833W | 1 | 18 ns | 27ns | 8 ns | 110 ns | 94A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 833W Tc | 282A | N-Channel | 13600pF @ 25V | 35m Ω @ 60A, 10V | 3.9V @ 5.4mA | 94A Tc | 640nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPW60R165CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipw60r165cpfksa1-datasheets-3943.pdf | TO-247-3 | 3 | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 192W Tc | 21A | 61A | 0.165Ohm | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 21A Tc | 52nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFA38N30X3 | IXYS | $4.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp38n30x3-datasheets-4130.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 300V | 240W Tc | N-Channel | 2240pF @ 25V | 50m Ω @ 19A, 10V | 4.5V @ 1mA | 38A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R170CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa60r170cfd7xksa1-datasheets-3827.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 26W Tc | TO-220AB | 51A | 0.17Ohm | 60 mJ | N-Channel | 1199pF @ 400V | 170m Ω @ 6A, 10V | 4.5V @ 300μA | 8A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STWA75N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa75n60m6-datasheets-3889.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STWA75 | NOT SPECIFIED | 600V | 446W Tc | N-Channel | 4850pF @ 100V | 36m Ω @ 36A, 10V | 4.75V @ 250μA | 72A Tc | 106nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW38N65M5-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw38n65m54-datasheets-3832.pdf | TO-247-4 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STW38N | 650V | 190W Tc | N-Channel | 3000pF @ 100V | 95m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 71nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP45N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw45n60dm6-datasheets-2855.pdf | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STP45N | NOT SPECIFIED | 600V | 210W Tc | N-Channel | 1920pF @ 100V | 99m Ω @ 15A, 10V | 4.75V @ 250μA | 30A Tc | 44nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N900CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 50W Tc | N-Channel | 482pF @ 100V | 900m Ω @ 1.5A, 10V | 4V @ 250μA | 4.5A Tc | 9.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT34N80B2C3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt34n80lc3g-datasheets-4309.pdf | 800V | 34A | TO-247-3 Variant | Lead Free | 3 | 18 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 417W | 1 | 25 ns | 15ns | 6 ns | 70 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 417W Tc | 670 mJ | N-Channel | 4510pF @ 25V | 145m Ω @ 22A, 10V | 3.9V @ 2mA | 34A Tc | 355nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHG47N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n60ee3-datasheets-8669.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 64mOhm | 3 | Tin | No | 1 | Single | 357W | 1 | TO-247AC | 9.62nF | 24 ns | 11ns | 13 ns | 94 ns | 47A | 20V | 600V | 2.5V | 357W Tc | 64mOhm | N-Channel | 9620pF @ 100V | 64mOhm @ 24A, 10V | 4V @ 250μA | 47A Tc | 220nC @ 10V | 64 mΩ | 10V | ±30V |
