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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SSM6J409TU(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD, Flat Leads | 6 | No | Other Transistors | 9.5A | 8V | Single | 20V | 1W Ta | P-Channel | 1100pF @ 10V | 22.1m Ω @ 3A, 4.5V | 1V @ 1mA | 9.5A Ta | 15nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD12N10-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd12n10t4-datasheets-6380.pdf | 100V | 12A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 56.6W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30ns | 32 ns | 22 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1.28W Ta 56.6W Tc | 36A | 75 mJ | 100V | N-Channel | 550pF @ 25V | 165m Ω @ 6A, 10V | 4V @ 250μA | 12A Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SSM4K27CTTPL3 | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 4-SMD, No Lead | 4 | unknown | 1 | Single | 400mW | FET General Purpose Power | 10 ns | 12 ns | 500mA | 12V | 400mW Ta | 0.5A | 20V | N-Channel | 174pF @ 10V | 205m Ω @ 250mA, 4V | 1.1V @ 1mA | 500mA Ta | 1.8V 4V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN280N07 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfn280n07-datasheets-4610.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 90ns | 50 ns | 85 ns | 280A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600W Tc | 1120A | 0.005Ohm | 3000 mJ | 70V | N-Channel | 9400pF @ 25V | 5m Ω @ 120A, 10V | 4V @ 8mA | 280A Tc | 420nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PH4030AL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | 5 | No | 69W | Single | 69W | LFPAK56, Power-SO8 | 2.09nF | 28 ns | 51ns | 18 ns | 44 ns | 100A | 20V | 30V | 4mOhm | 35V | N-Channel | 2090pF @ 12V | 4mOhm @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 36.6nC @ 10V | 4 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60S-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sihp22n60se3-datasheets-4613.pdf | TO-220-3 | Lead Free | 3 | Unknown | 190mOhm | 3 | yes | No | e3 | Matte Tin (Sn) | 250W | SINGLE | 3 | 250W | 1 | FET General Purpose Power | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2V | TO-220AB | 65A | 690 mJ | 600V | N-Channel | 2810pF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70N04S3-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipd70n04s307-datasheets-4626.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 6.22mm | Lead Free | 2 | 3 | no | EAR99 | ULTRA LOW RESISTANCE | 8541.29.00.95 | e3 | Matte Tin (Sn) | Halogen Free | YES | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 79W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 13 ns | 8ns | 7 ns | 17 ns | 82A | 20V | 40V | SILICON | DRAIN | 79W Tc | 70A | 280A | 0.006Ohm | 145 mJ | 40V | N-Channel | 2700pF @ 25V | 6m Ω @ 70A, 10V | 4V @ 50μA | 82A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SSM3J129TU(TE85L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 2.1mm | 700μm | 1.7mm | 3 | No | Single | 32 ns | 102 ns | 4.6A | 8V | 20V | 500mW Ta | P-Channel | 640pF @ 10V | 46m Ω @ 3A, 4.5V | 1V @ 1mA | 4.6A Ta | 8.1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J120TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 4A | 20V | 500mW Ta | P-Channel | 1484pF @ 10V | 38m Ω @ 3A, 4V | 1V @ 1mA | 4A Ta | 22.3nC @ 4V | 1.5V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PH5030AL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | SC-100, SOT-669 | 5 | No | 61W | Single | 61W | LFPAK56, Power-SO8 | 1.76nF | 19 ns | 35ns | 12 ns | 29 ns | 91A | 20V | 30V | 5mOhm | 35V | N-Channel | 1760pF @ 12V | 5mOhm @ 15A, 10V | 2.15V @ 1mA | 91A Tc | 29nC @ 10V | 5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PH1730AL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | 20 Weeks | 5 | No | 109W | Single | 109W | LFPAK56, Power-SO8 | 5.057nF | 46 ns | 72ns | 34 ns | 76 ns | 100A | 20V | 30V | 1.7mOhm | 30V | N-Channel | 5057pF @ 12V | 1.7mOhm @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 77.9nC @ 10V | 1.7 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PH1930AL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | SC-100, SOT-669 | 5 | No | 97W | Single | 97W | LFPAK56, Power-SO8 | 3.98nF | 39 ns | 65ns | 28 ns | 63 ns | 100A | 20V | 30V | 2mOhm | 35V | N-Channel | 3980pF @ 12V | 2mOhm @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 64nC @ 10V | 2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PH6030AL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | Lead Free | 5 | No | 55W | Single | 55W | LFPAK56, Power-SO8 | 1.425nF | 25 ns | 43ns | 11 ns | 31 ns | 79A | 20V | 30V | 7.87mOhm | 35V | N-Channel | 1425pF @ 12V | 6mOhm @ 15A, 10V | 2.15V @ 1mA | 79A Tc | 24nC @ 10V | 6 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5300TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5300trpbf-datasheets-7606.pdf | 8-PowerVDFN | 5mm | 838.2μm | 5.0038mm | No SVHC | 8 | No | 3.6W | Single | 3.6W | 1 | PQFN (5x6) Single Die | 7.2nF | 26 ns | 30ns | 13 ns | 31 ns | 100A | 20V | 30V | 1.8V | 51 ns | 1.4mOhm | 30V | N-Channel | 7200pF @ 15V | 1.8 V | 1.4mOhm @ 50A, 10V | 2.35V @ 150μA | 40A Ta 100A Tc | 120nC @ 10V | 1.4 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO130N03MSGXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso130n03msgxuma1-datasheets-4565.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.56W Ta | 0.013Ohm | N-Channel | 1300pF @ 15V | 13m Ω @ 11.1A, 10V | 2V @ 250μA | 9A Ta | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDZ4670 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-fdz4670-datasheets-4263.pdf | 20-FLFBGA (30 pos) | 20 | Single | 2.5W | 11ns | 67 ns | 50 ns | 25A | 20V | 2.5W Ta | 30V | N-Channel | 3540pF @ 15V | 2.5m Ω @ 25A, 10V | 3V @ 250μA | 25A Ta | 56nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PH7030AL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | 5 | No | 51W | Single | 51W | LFPAK56, Power-SO8 | 1.27nF | 24 ns | 39ns | 11 ns | 30 ns | 76A | 20V | 30V | 7mOhm | 35V | N-Channel | 1270pF @ 12V | 7mOhm @ 15A, 10V | 2.15V @ 1mA | 76A Tc | 22nC @ 10V | 7 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PH3030AL,115 | Nexperia USA Inc. | $1.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | SC-100, SOT-669 | 5 | No | 81W | Single | 81W | LFPAK56, Power-SO8 | 2.822nF | 34 ns | 58ns | 21 ns | 50 ns | 100A | 20V | 30V | 3mOhm | 35V | N-Channel | 2822pF @ 12V | 3mOhm @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 45.8nC @ 10V | 3 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN34N80 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfn34n80-datasheets-4605.pdf | SOT-227-4, miniBLOC | 4 | 8 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 45ns | 40 ns | 100 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600W Tc | 136A | 3000 mJ | 800V | N-Channel | 7500pF @ 25V | 240m Ω @ 500mA, 10V | 5V @ 8mA | 34A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7799L2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7799l2trpbf-datasheets-6468.pdf | DirectFET™ Isometric L8 | 9.144mm | 496μm | 7.1mm | Lead Free | No SVHC | 38MOhm | 8 | No | Single | 125W | 1 | DIRECTFET L8 | 6.714nF | 36.3 ns | 33.5ns | 26.6 ns | 73.9 ns | 6.6A | 30V | 250V | 4V | 4.3W Ta 125W Tc | 198 ns | 32mOhm | 250V | N-Channel | 6714pF @ 25V | 4 V | 38mOhm @ 21A, 10V | 5V @ 250μA | 375A Tc | 165nC @ 10V | 38 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF9310PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf9310trpbf-datasheets-4217.pdf&product=infineontechnologies-irf9310pbf-6866898 | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 22 Weeks | No SVHC | 4.6MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | R-PDSO-G3 | 25 ns | 47ns | 70 ns | 65 ns | -20A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1.8V | 2.5W Ta | 107 ns | 630 mJ | -30V | P-Channel | 5250pF @ 15V | -1.8 V | 4.6m Ω @ 20A, 10V | 2.4V @ 100μA | 20A Tc | 165nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSS83PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss83pe6327-datasheets-5712.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 360mW | 1 | SOT-23-3 | 78pF | 330mA | 20V | 60V | 360mW Ta | P-Channel | 78pF @ 25V | 2Ohm @ 330mA, 10V | 2V @ 80μA | 330mA Ta | 3.57nC @ 10V | 2 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG3415UFY4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmg3415ufy47-datasheets-4417.pdf | 3-XFDFN | 2.08mm | 350μm | 1.575mm | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3 | 1 | Single | 40 | 490mW | 1 | Other Transistors | 79 ns | 175ns | 568 ns | 884.5 ns | 2.5A | 8V | SILICON | DRAIN | SWITCHING | 16V | 400mW Ta | -16V | P-Channel | 281.9pF @ 10V | 39m Ω @ 4A, 4.5V | 1V @ 250μA | 2.5A Ta | 10nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN52N90P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn52n90p-datasheets-4549.pdf | SOT-227-4, miniBLOC | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 43A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 890W Tc | 104A | 0.16Ohm | 2000 mJ | N-Channel | 19000pF @ 25V | 160m Ω @ 26A, 10V | 6.5V @ 1mA | 43A Tc | 308nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7779L2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7779l2trpbf-datasheets-0244.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.1mm | Lead Free | No SVHC | 11MOhm | 8 | No | Single | 125W | 1 | DIRECTFET L8 | 6.66nF | 16 ns | 19ns | 12 ns | 36 ns | 11A | 20V | 150V | 4V | 3.3W Ta 125W Tc | 170 ns | 9mOhm | 150V | N-Channel | 6660pF @ 25V | 4 V | 11mOhm @ 40A, 10V | 5V @ 250μA | 375A Tc | 150nC @ 10V | 11 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60S-E3 | Vishay Siliconix | $2.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60se3-datasheets-4483.pdf | TO-247-3 | Lead Free | Unknown | 190mOhm | 3 | No | 250W | TO-247AC | 5.62nF | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | 600V | 4V | 250W Tc | 160mOhm | 600V | N-Channel | 5620pF @ 25V | 4 V | 190mOhm @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 190 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF18N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf18n50ce3-datasheets-4486.pdf | TO-220-3 | 3 | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 38W | 1 | FET General Purpose Power | 22 ns | 60ns | 30 ns | 45 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 38W Tc | TO-220AB | 72A | 0.27Ohm | N-Channel | 2942pF @ 25V | 270m Ω @ 10A, 10V | 5V @ 250μA | 18A Tc | 76nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002K,215 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-2n7002k215-datasheets-4489.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 830mW Ta | TO-236AB | 0.34A | 10 pF | N-Channel | 40pF @ 10V | 3.9 Ω @ 500mA, 10V | 2V @ 1mA | 340mA Ta | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n60-datasheets-4492.pdf | SOT-227-4, miniBLOC | 4 | 46g | No SVHC | 130mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 600W | 1 | FET General Purpose Power | R-PUFM-X4 | 2.5kV | 55ns | 45 ns | 110 ns | 44A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.5V | 600W Tc | 600V | N-Channel | 8900pF @ 25V | 4.5 V | 130m Ω @ 500mA, 10V | 4.5V @ 8mA | 44A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFP3N50PM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp3n50pm-datasheets-4507.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 36W | 1 | Not Qualified | R-PSFM-T3 | 28ns | 29 ns | 63 ns | 2.7A | 30V | SILICON | ISOLATED | SWITCHING | 36W Tc | TO-220AB | 8A | 2Ohm | 100 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 250μA | 2.7A Tc | 9.3nC @ 10V | 10V | ±30V |
