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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP45N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw45n60dm6-datasheets-2855.pdf | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STP45N | NOT SPECIFIED | 600V | 210W Tc | N-Channel | 1920pF @ 100V | 99m Ω @ 15A, 10V | 4.75V @ 250μA | 30A Tc | 44nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N900CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 50W Tc | N-Channel | 482pF @ 100V | 900m Ω @ 1.5A, 10V | 4V @ 250μA | 4.5A Tc | 9.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT34N80B2C3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt34n80lc3g-datasheets-4309.pdf | 800V | 34A | TO-247-3 Variant | Lead Free | 3 | 18 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 417W | 1 | 25 ns | 15ns | 6 ns | 70 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 417W Tc | 670 mJ | N-Channel | 4510pF @ 25V | 145m Ω @ 22A, 10V | 3.9V @ 2mA | 34A Tc | 355nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHG47N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n60ee3-datasheets-8669.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 64mOhm | 3 | Tin | No | 1 | Single | 357W | 1 | TO-247AC | 9.62nF | 24 ns | 11ns | 13 ns | 94 ns | 47A | 20V | 600V | 2.5V | 357W Tc | 64mOhm | N-Channel | 9620pF @ 100V | 64mOhm @ 24A, 10V | 4V @ 250μA | 47A Tc | 220nC @ 10V | 64 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFP90N20X3M | IXYS | $3.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixfp90n20x3m-datasheets-3850.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 200V | 36W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R650CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd60r650ceauma1-datasheets-8104.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 2.299997g | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 10 ns | 8ns | 11 ns | 58 ns | 7A | 20V | 600V | SILICON | ISOLATED | SWITCHING | 28W Tc | TO-220AB | 0.65Ohm | 650V | N-Channel | 440pF @ 100V | 650m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7A Tc | 20.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STW75N60M6-4 | STMicroelectronics | $14.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw75n60m64-datasheets-3858.pdf | TO-247-4 | 16 Weeks | compliant | STW75N | 600V | 446W Tc | N-Channel | 4850pF @ 100V | 36m Ω @ 36A, 10V | 4.75V @ 250μA | 72A Tc | 106nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH043N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fch043n60-datasheets-2083.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 12 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 46 ns | 36ns | 6 ns | 162 ns | 75A | 20V | SILICON | SWITCHING | 600V | 600V | 592W Tc | TO-247AB | 225A | 2025 mJ | N-Channel | 12225pF @ 400V | 43m Ω @ 38A, 10V | 3.5V @ 250μA | 75A Tc | 215nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| APT53N60BC6 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | TO-247-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 417W Tc | 53A | 159A | 0.07Ohm | 1135 mJ | N-Channel | 4020pF @ 25V | 70m Ω @ 25.8A, 10V | 3.5V @ 1.72mA | 53A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPA032N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa032n06n3gxksa1-datasheets-3806.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 41W | 1 | Not Qualified | 35 ns | 120ns | 20 ns | 62 ns | 84A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 41W Tc | TO-220AB | N-Channel | 13000pF @ 30V | 3.2m Ω @ 80A, 10V | 4V @ 118μA | 84A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFIBE20GPBF | Vishay Siliconix | $2.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfibe20g-datasheets-8616.pdf | 800V | 1.4A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 6.5Ohm | 3 | No | 1 | Single | 30W | 1 | TO-220-3 | 530pF | 8.2 ns | 17ns | 27 ns | 58 ns | 1.4A | 20V | 800V | 4V | 30W Tc | 6.5Ohm | 800V | N-Channel | 530pF @ 25V | 6.5Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 38nC @ 10V | 6.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TK14A65W,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/toshibasemiconductorandstorage-tk14a65ws5x-datasheets-3817.pdf | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 1.3nF | 60 ns | 20ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 40W Tc | 220mOhm | 650V | N-Channel | 1300pF @ 300V | 250mOhm @ 6.9A, 10V | 3.5V @ 690μA | 13.7A Ta | 35nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N600CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 83W Tc | N-Channel | 743pF @ 100V | 600m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 12.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG17N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihg17n80ege3-datasheets-3823.pdf | TO-247-3 | 24.99mm | 14 Weeks | 1 | 208W | 150°C | 22 ns | 71 ns | 15A | 30V | 208W Tc | 800V | N-Channel | 2408pF @ 100V | 290m Ω @ 8.5A, 10V | 4V @ 250μA | 15A Tc | 122nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA27N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa27n25-datasheets-3736.pdf | 250V | 27A | TO-3P-3, SC-65-3 | Lead Free | 3 | 4 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 210W | 1 | FET General Purpose Power | 32 ns | 270ns | 120 ns | 80 ns | 27A | 30V | SILICON | SWITCHING | 210W Tc | 600 mJ | 250V | N-Channel | 2450pF @ 25V | 110m Ω @ 13.5A, 10V | 5V @ 250μA | 27A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| TSM60NB150CF C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb150cfc0g-datasheets-3744.pdf | TO-220-3 Full Pack | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 62.5W Tc | N-Channel | 1765pF @ 100V | 150m Ω @ 4.3A, 10V | 4V @ 250μA | 24A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBF30GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfibf30g-datasheets-8586.pdf | 900V | 1.9A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3.7Ohm | 3 | 1 | Single | 35W | 1 | TO-220-3 | 1.2nF | 2.5kV | 14 ns | 25ns | 30 ns | 90 ns | 1.9A | 20V | 900V | 900V | 4V | 35W Tc | 3.7Ohm | 900V | N-Channel | 1200pF @ 25V | 4 V | 3.7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| R6024ENX | ROHM Semiconductor | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 40W Tc | TO-220AB | 72A | 0.165Ohm | 497 mJ | N-Channel | 1650pF @ 25V | 165m Ω @ 11.3A, 10V | 4V @ 1mA | 24A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STW15N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf15n95k5-datasheets-1914.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 17 Weeks | 38.000013g | 3 | EAR99 | NOT SPECIFIED | STW15N | 1 | Single | NOT SPECIFIED | 30W | 20 ns | 62 ns | 12A | 30V | 170W Tc | 950V | N-Channel | 900pF @ 100V | 500m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6030ENZ1C9 | ROHM Semiconductor | $17.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-247-3 | Lead Free | 3 | 10 Weeks | No SVHC | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 4V | 120W Tc | 80A | N-Channel | 2100pF @ 25V | 130m Ω @ 14.5A, 10V | 4V @ 1mA | 30A Tc | 85nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6030KNX | ROHM Semiconductor | $3.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-220-3 Full Pack | 3 | 18 Weeks | No SVHC | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 5V | 86W Tc | TO-220AB | 80A | N-Channel | 2350pF @ 25V | 130m Ω @ 14.5A, 10V | 5V @ 1mA | 30A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6012FNX | ROHM Semiconductor | $18.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 3 | 10 Weeks | 3 | No | SINGLE | 1 | 30 ns | 37ns | 20 ns | 77 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 50W Tc | TO-220AB | 48A | 0.51Ohm | 9.6 mJ | N-Channel | 1300pF @ 25V | 510m Ω @ 6A, 10V | 5V @ 1mA | 12A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STP260N6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sti260n6f6-datasheets-9602.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 20 Weeks | No SVHC | 3MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STP260 | 3 | Single | 300W | 1 | FET General Purpose Power | 31.4 ns | 165ns | 62.6 ns | 144.4 ns | 120A | 20V | SILICON | SWITCHING | 60V | 2V | 300W Tc | TO-220AB | 480A | 75V | N-Channel | 11400pF @ 25V | 3m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 183nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STFU16N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfu16n65m2-datasheets-3698.pdf | TO-220-3 Full Pack | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | STFU1 | 650V | 25W Tc | N-Channel | 718pF @ 100V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 19.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R125P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r125p6xksa1-datasheets-2313.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 30A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 219W Tc | 87A | 0.125Ohm | 636 mJ | N-Channel | 2660pF @ 100V | 125m Ω @ 11.6A, 10V | 4.5V @ 960μA | 30A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| R6015ENX | ROHM Semiconductor | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 40W Tc | TO-220AB | 0.29Ohm | 284 mJ | N-Channel | 910pF @ 25V | 290m Ω @ 6.5A, 10V | 4V @ 1mA | 15A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STF17N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf17n80k5-datasheets-3716.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF17 | NOT SPECIFIED | 800V | 30W Tc | N-Channel | 866pF @ 100V | 340m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP33N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp33n60m6-datasheets-3719.pdf | TO-220-3 | 16 Weeks | STP33N | 600V | 190W Tc | N-Channel | 1515pF @ 100V | 125m Ω @ 12.5A, 10V | 4.75V @ 250μA | 25A Tc | 33.4nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF190A60L | Alpha & Omega Semiconductor Inc. | $1.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK100A08N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk100a08n1s4x-datasheets-3721.pdf | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 9nF | 53 ns | 26ns | 46 ns | 140 ns | 100A | 20V | 80V | 45W Tc | 2.6mOhm | N-Channel | 9000pF @ 40V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 100A Tc | 130nC @ 10V | 3.2 mΩ | 10V | ±20V |
