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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM80N950CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n950cprog-datasheets-2191.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 24 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 25W Tc | TO-220AB | 6A | 18A | 0.95Ohm | 121 mJ | N-Channel | 691pF @ 100V | 950m Ω @ 2A, 10V | 4V @ 250μA | 6A Tc | 19.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STFU16N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfu16n65m2-datasheets-3698.pdf | TO-220-3 Full Pack | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | STFU1 | 650V | 25W Tc | N-Channel | 718pF @ 100V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 19.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R125P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r125p6xksa1-datasheets-2313.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 30A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 219W Tc | 87A | 0.125Ohm | 636 mJ | N-Channel | 2660pF @ 100V | 125m Ω @ 11.6A, 10V | 4.5V @ 960μA | 30A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| R6015ENX | ROHM Semiconductor | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 40W Tc | TO-220AB | 0.29Ohm | 284 mJ | N-Channel | 910pF @ 25V | 290m Ω @ 6.5A, 10V | 4V @ 1mA | 15A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STF17N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf17n80k5-datasheets-3716.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF17 | NOT SPECIFIED | 800V | 30W Tc | N-Channel | 866pF @ 100V | 340m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP33N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp33n60m6-datasheets-3719.pdf | TO-220-3 | 16 Weeks | STP33N | 600V | 190W Tc | N-Channel | 1515pF @ 100V | 125m Ω @ 12.5A, 10V | 4.75V @ 250μA | 25A Tc | 33.4nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF190A60L | Alpha & Omega Semiconductor Inc. | $1.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK100A08N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk100a08n1s4x-datasheets-3721.pdf | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 9nF | 53 ns | 26ns | 46 ns | 140 ns | 100A | 20V | 80V | 45W Tc | 2.6mOhm | N-Channel | 9000pF @ 40V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 100A Tc | 130nC @ 10V | 3.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TK14N65W5,S1F | Toshiba Semiconductor and Storage | $15.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk14n65w5s1f-datasheets-3663.pdf | TO-247-3 | 16 Weeks | TO-247 | 1.3nF | 13.7A | 650V | 130W Tc | N-Channel | 1300pF @ 300V | 300mOhm @ 6.9A, 10V | 4.5V @ 690μA | 13.7A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6024ENZ1C9 | ROHM Semiconductor | $8.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-247-3 | 3 | 10 Weeks | No SVHC | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 4V | 120W Tc | 72A | 0.165Ohm | 497 mJ | N-Channel | 1650pF @ 25V | 165m Ω @ 11.3A, 10V | 4V @ 1mA | 24A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TSM10N80CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm10n80czc0g-datasheets-3666.pdf | TO-220-3 | 24 Weeks | 800V | 290W Tc | N-Channel | 2336pF @ 25V | 1.05 Ω @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3205 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf3205-datasheets-3601.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | 16 Weeks | No SVHC | 3 | EAR99 | No | Single | 200W | 1 | FET General Purpose Power | 14 ns | 101ns | 65 ns | 50 ns | 75A | 20V | 2V | 200W Tc | 55V | N-Channel | 3247pF @ 25V | 8m Ω @ 62A, 10V | 4V @ 250μA | 75A Tc | 146nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STP85NF55 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb85nf55t4-datasheets-2574.pdf | 55V | 80A | TO-220-3 | 38.1mm | 6.35mm | 12.7mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 8mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP85N | 3 | Single | 300W | 1 | FET General Purpose Power | 25 ns | 100ns | 35 ns | 70 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | TO-220AB | 980 mJ | 55V | N-Channel | 3700pF @ 25V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| TSM15N50CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm15n50cic0g-datasheets-2958.pdf | TO-220-3 | 24 Weeks | TO-220 | 500V | N-Channel | 2263pF @ 25V | 440mOhm @ 7A, 10V | 4V @ 250μA | 14A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC20SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfbc20strlpbf-datasheets-2593.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 4.4Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2.2A | 20V | 600V | 4V | 3.1W Ta 50W Tc | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 4.4Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| HUF75344P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-huf75344g3-datasheets-3963.pdf | 55V | 75A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 285W | 1 | FET General Purpose Power | 13 ns | 125ns | 57 ns | 46 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 285W Tc | TO-220AB | 0.008Ohm | 55V | N-Channel | 3200pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 210nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STP9NK70ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nk70z-datasheets-7643.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 2 weeks ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP9N | 3 | Single | 35W | 1 | FET General Purpose Power | 22 ns | 17ns | 13 ns | 45 ns | 4A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 35W Tc | TO-220AB | 7.5A | 700V | N-Channel | 1370pF @ 25V | 1.2 Ω @ 4A, 10V | 4.5V @ 100μA | 7.5A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFA10N60P | IXYS | $3.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfp10n60p-datasheets-2120.pdf | 600V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 65 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 25A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5.5V @ 1mA | 10A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STP80NF55-08 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb80nf5508t4-datasheets-5461.pdf | 55V | 80A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 4.535924g | No SVHC | 8mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP80N | 3 | Single | 300W | 1 | FET General Purpose Power | 20 ns | 85ns | 25 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | TO-220AB | 55V | N-Channel | 3850pF @ 25V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| TK14A65W5,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk14a65w5s5x-datasheets-3644.pdf | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 1.3nF | 90 ns | 40ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 40W Tc | 250mOhm | N-Channel | 1300pF @ 300V | 300mOhm @ 6.9A, 10V | 4.5V @ 690μA | 13.7A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STP7N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw7n105k5-datasheets-8468.pdf | TO-220-3 | 19.68mm | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP7N | 1 | NOT SPECIFIED | 110W | FET General Purpose Power | 150°C | 17.5 ns | 43 ns | 4A | 30V | Single | 1050V | 110W Tc | 4A | 1.05kV | N-Channel | 380pF @ 100V | 2 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STI24N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | NOT SPECIFIED | STI24N | NOT SPECIFIED | 600V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF15S65L | Alpha & Omega Semiconductor Inc. | $1.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 15A | 650V | 34W Tc | N-Channel | 841pF @ 100V | 290m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF10N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw10n95k5-datasheets-4176.pdf | TO-220-3 Full Pack | Lead Free | 3 | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STF10N | NOT SPECIFIED | 1 | R-PSFM-T3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 950V | 950V | 30W Tc | TO-247 | 8A | 32A | 0.8Ohm | 122 mJ | N-Channel | 630pF @ 100V | 800m Ω @ 4A, 10V | 5V @ 100μA | 8A Tc | 22nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM70N600CH C5G | Taiwan Semiconductor Corporation | $5.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 83W Tc | N-Channel | 743pF @ 100V | 600m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 12.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM7N90CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm7n90cic0g-datasheets-7917.pdf | TO-220-3 | 24 Weeks | TO-220 | 900V | 40.3W Tc | N-Channel | 1969pF @ 25V | 1.9Ohm @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF16N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp16n65m5-datasheets-4261.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 279mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STF16 | 3 | Single | 25W | 1 | FET General Purpose Power | 25 ns | 9ns | 7 ns | 30 ns | 12A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 25W Tc | TO-220AB | 48A | 200 mJ | 650V | N-Channel | 1250pF @ 100V | 299m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 45nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| IPA60R385CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipa60r385cpxksa1-datasheets-3525.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 650V | 31W Tc | TO-220AB | 9A | 27A | 0.385Ohm | 227 mJ | N-Channel | 790pF @ 100V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 9A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STF18NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18nm60n-datasheets-1964.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 285MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF18 | 3 | Single | 30W | 1 | FET General Purpose Power | 12 ns | 22ns | 40 ns | 50 ns | 13A | 25V | SILICON | ISOLATED | SWITCHING | 600V | 3V | 30W Tc | TO-220AB | 52A | 650V | N-Channel | 1000pF @ 50V | 285m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 35nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| TSM8N80CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm8n80czc0g-datasheets-2715.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | 800V | 40.3W Tc | N-Channel | 1921pF @ 25V | 1.05 Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 41nC @ 10V | 10V | ±30V |
