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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP11NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp11nk50zfp-datasheets-8299.pdf | 500V | 10A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP11N | 3 | Single | 125W | 1 | FET General Purpose Power | 14.5 ns | 18ns | 15 ns | 41 ns | 10A | 30V | SILICON | SWITCHING | 3.75V | 125W Tc | TO-220AB | 40A | 0.52Ohm | 500V | N-Channel | 1390pF @ 25V | 520m Ω @ 4.5A, 10V | 4.5V @ 100μA | 10A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRFSL3306PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfb3306pbf-datasheets-3047.pdf | 60V | 160A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 40 | 230W | 1 | FET General Purpose Power | 15 ns | 76ns | 77 ns | 40 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 620A | 0.0042Ohm | 60V | N-Channel | 4520pF @ 50V | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF840ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840astrrpbf-datasheets-6542.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 8 Weeks | 2.387001g | Unknown | 3 | No | 1 | Single | 3.1W | 1 | I2PAK | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | N-Channel | 1018pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STF18N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf18n60m6-datasheets-3405.pdf | TO-220-3 Full Pack | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 25W Tc | N-Channel | 650pF @ 100V | 280m Ω @ 6.5A, 10V | 4.75V @ 250μA | 13A Tc | 16.8nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9630GPBF | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi9630g-datasheets-8512.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 700pF | 2.5kV | 12 ns | 27ns | 24 ns | 28 ns | 4.3A | 20V | 200V | -4V | 35W Tc | 300 ns | 800mOhm | -200V | P-Channel | 700pF @ 25V | 800mOhm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STF7NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu7nm60n-datasheets-2623.pdf | TO-220-5 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 900MOhm | 3 | EAR99 | No | STF7N | 3 | Single | 20W | 1 | FET General Purpose Power | 7 ns | 10ns | 12 ns | 26 ns | 5A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 20W Tc | TO-220AB | 5A | 20A | 600V | N-Channel | 363pF @ 50V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| FQPF85N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqpf85n06-datasheets-3424.pdf | 60V | 53A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 10mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 62W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 230ns | 170 ns | 175 ns | 53A | 25V | 60V | SILICON | ISOLATED | SWITCHING | 4V | 62W Tc | 820 mJ | 60V | N-Channel | 4120pF @ 25V | 4 V | 10m Ω @ 26.5A, 10V | 4V @ 250μA | 53A Tc | 112nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| IRFZ24SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfz24pbf-datasheets-1307.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | 3 | No | 1 | TO-263 (D2Pak) | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 17A | 20V | 60V | 3.7W Ta 60W Tc | 100mOhm | 60V | N-Channel | 640pF @ 25V | 100mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP4NK80ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk80zt4-datasheets-3909.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | 3.5Ohm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | STP4N | 3 | Single | 25W | 1 | FET General Purpose Power | 13 ns | 12ns | 32 ns | 35 ns | 3A | 30V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 3A | 12A | 190 mJ | 800V | N-Channel | 575pF @ 25V | 3.5 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 22.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHA14N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siha14n60ee3-datasheets-3348.pdf | TO-220-3 Full Pack | 18.1mm | 3 | 18 Weeks | NO | 1 | 147W | 1 | 150°C | R-PSFM-T3 | 15 ns | 35 ns | 13A | 30V | SILICON | SWITCHING | 147W Tc | TO-220AB | 32A | 0.309Ohm | 600V | N-Channel | 1205pF @ 100V | 309m Ω @ 7A, 10V | 4V @ 250μA | 13A Tc | 64nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF100N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp100n10f7-datasheets-1960.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 13 Weeks | 80mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF100N | Single | 30W | 1 | FET General Purpose Powers | 27 ns | 40ns | 15 ns | 46 ns | 45A | 20V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 180A | 400 mJ | 100V | N-Channel | 4369pF @ 50V | 8m Ω @ 22.5A, 10V | 4.5V @ 250μA | 45A Tc | 61nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STF13NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp13nk50z-datasheets-8931.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STF13 | 3 | Single | 30W | 1 | FET General Purpose Power | 18 ns | 23ns | 24 ns | 61 ns | 6.5A | 30V | 500V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 11A | 44A | 0.48Ohm | 240 mJ | 500V | N-Channel | 1600pF @ 25V | 3.75 V | 480m Ω @ 6.5A, 10V | 4.5V @ 100μA | 11A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TSM85N10CZ C0G | Taiwan Semiconductor Corporation | $6.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm85n10czc0g-datasheets-3303.pdf | TO-220-3 | TO-220 | 100V | 210W Tc | N-Channel | 3900pF @ 30V | 10mOhm @ 40A, 10V | 4V @ 250μA | 81A Tc | 154nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH90N20X3 | IXYS | $47.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp90n20x3-datasheets-4520.pdf | TO-247-3 | 19 Weeks | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP14N60E-GE3 | Vishay Siliconix | $1.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp14n60ege3-datasheets-3309.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 147W Tc | N-Channel | 1205pF @ 100V | 309mOhm @ 7A, 10V | 4V @ 250μA | 13A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF9N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcp9n60n-datasheets-9296.pdf | TO-220-3 Full Pack | 10.16mm | 15.9mm | 4.7mm | 3 | 12 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 29.8W | 1 | FET General Purpose Power | 12.7 ns | 8.7ns | 10.2 ns | 36.9 ns | 9A | 30V | SILICON | ISOLATED | SWITCHING | 29.8W Tc | TO-220AB | 9A | 27A | 600V | N-Channel | 1240pF @ 100V | 385m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| CSD18511KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.18mm | 4.83mm | 8.41mm | 2 | 12 Weeks | 3 | ACTIVE (Last Updated: 1 week ago) | yes | 4.44mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | CSD18511 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 188W Ta | 110A | 400A | 0.0042Ohm | 156 mJ | N-Channel | 5940pF @ 20V | 2.6m Ω @ 100A, 10V | 2.4V @ 250μA | 110A Ta 194A Tc | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STF12N50DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf12n50dm2-datasheets-3323.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF12 | NOT SPECIFIED | 11A | 500V | 25W Tc | N-Channel | 628pF @ 100V | 350m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 16nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI13N50CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqi13n50ctu-datasheets-3327.pdf | 500V | 13A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 4 Weeks | 2.084g | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 195W | 1 | FET General Purpose Power | R-PSIP-T3 | 25 ns | 100ns | 100 ns | 130 ns | 13A | 30V | SILICON | SWITCHING | 195W Tc | 52A | 0.48Ohm | 860 mJ | 500V | N-Channel | 2055pF @ 25V | 480m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFI634GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfi634g-datasheets-8518.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 770pF | 9.6 ns | 21ns | 19 ns | 42 ns | 5.6A | 20V | 250V | 2V | 35W Tc | 450mOhm | 250V | N-Channel | 770pF @ 25V | 450mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SUA70090E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sua70090ee3-datasheets-3339.pdf | TO-220-3 Full Pack | 3 | 14 Weeks | EAR99 | unknown | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 42.8A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 35.7W Tc | TO-220AB | 120A | 0.0093Ohm | 80 mJ | N-Channel | 1950pF @ 50V | 9.3m Ω @ 20A, 10V | 4V @ 250μA | 42.8A Tc | 50nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI90N04S402AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb90n04s402atma1-datasheets-8150.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 23 ns | 13ns | 26 ns | 27 ns | 90A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 150W Tc | 0.0025Ohm | 475 mJ | N-Channel | 9430pF @ 25V | 2.5m Ω @ 90A, 10V | 4V @ 95μA | 90A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP18NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18nm60n-datasheets-1964.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 285mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP18N | 3 | Single | 110W | 1 | FET General Purpose Power | 12 ns | 15ns | 25 ns | 55 ns | 13A | 25V | SILICON | SWITCHING | 3V | 110W Tc | TO-220AB | 52A | 600V | N-Channel | 1000pF @ 50V | 285m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 35nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| STP13N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw13n60m2-datasheets-5232.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 16 Weeks | 380mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP13N | Single | 11 ns | 10ns | 9.5 ns | 41 ns | 11A | 25V | 600V | 110W Tc | N-Channel | 580pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80R750P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineon-ipp80r750p7xksa1-datasheets-1832.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 51W Tc | TO-220AB | 17A | 0.75Ohm | 16 mJ | N-Channel | 460pF @ 500V | 750m Ω @ 2.7A, 10V | 3.5V @ 140μA | 7A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf830aspbf-datasheets-3844.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | Lead Free | 8 Weeks | 2.387001g | Unknown | 1.4Ohm | 3 | No | 1 | Single | 3.1W | 1 | I2PAK | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 4.5V | 3.1W Ta 74W Tc | 1.4Ohm | N-Channel | 620pF @ 25V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| STF18N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf18n60m2-datasheets-3234.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STF18 | 1 | Single | 25W | 12 ns | 9ns | 10.6 ns | 47 ns | 13A | 25V | 25W Tc | 600V | N-Channel | 791pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 21.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF16NF25 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std16nf25-datasheets-8031.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF16 | 3 | Single | 25W | 1 | FET General Purpose Power | 9 ns | 17ns | 17 ns | 35 ns | 6.5A | 20V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 52A | 250V | N-Channel | 680pF @ 25V | 3 V | 235m Ω @ 6.5A, 10V | 4V @ 250μA | 14A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TK56A12N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tk56a12n1s4x-datasheets-3243.pdf | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 4.2nF | 45 ns | 20ns | 23 ns | 73 ns | 56A | 20V | 120V | 45W Tc | 6.2mOhm | N-Channel | 4200pF @ 60V | 7.5mOhm @ 28A, 10V | 4V @ 1mA | 56A Tc | 69nC @ 10V | 7.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA4N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha4n80ege3-datasheets-3247.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 800V | 69W Tc | 1.1Ohm | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V |
