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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP140NF55 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb140nf55t4-datasheets-5190.pdf | 55V | 80A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 8mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP140 | 3 | Single | 300W | 1 | FET General Purpose Power | 30 ns | 150ns | 45 ns | 125 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | TO-220AB | 55V | N-Channel | 5300pF @ 25V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 142nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| R5021ANX | ROHM Semiconductor | $23.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 50W Tc | TO-220AB | 84A | 0.21Ohm | 29.6 mJ | N-Channel | 2300pF @ 25V | 210m Ω @ 10.5A, 10V | 4.5V @ 1mA | 21A Tc | 64nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STFU24N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfu24n60m2-datasheets-3588.pdf | TO-220-3 Full Pack | 16 Weeks | EAR99 | NOT SPECIFIED | STFU2 | NOT SPECIFIED | 18A | 600V | 30W Tc | N-Channel | 1060pF @ 100V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK14E65W5,S1X | Toshiba Semiconductor and Storage | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk14e65w5s1x-datasheets-3592.pdf | TO-220-3 | 16 Weeks | 13.7A | 650V | 130W Tc | N-Channel | 1300pF @ 300V | 300m Ω @ 6.9A, 10V | 4.5V @ 690μA | 13.7A Ta | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF16N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp16n65m5-datasheets-4261.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 279mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STF16 | 3 | Single | 25W | 1 | FET General Purpose Power | 25 ns | 9ns | 7 ns | 30 ns | 12A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 25W Tc | TO-220AB | 48A | 200 mJ | 650V | N-Channel | 1250pF @ 100V | 299m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| IPA60R385CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipa60r385cpxksa1-datasheets-3525.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 650V | 31W Tc | TO-220AB | 9A | 27A | 0.385Ohm | 227 mJ | N-Channel | 790pF @ 100V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 9A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STF18NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18nm60n-datasheets-1964.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 285MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF18 | 3 | Single | 30W | 1 | FET General Purpose Power | 12 ns | 22ns | 40 ns | 50 ns | 13A | 25V | SILICON | ISOLATED | SWITCHING | 600V | 3V | 30W Tc | TO-220AB | 52A | 650V | N-Channel | 1000pF @ 50V | 285m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 35nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| TSM8N80CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm8n80czc0g-datasheets-2715.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | 800V | 40.3W Tc | N-Channel | 1921pF @ 25V | 1.05 Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R280P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r280p7xksa1-datasheets-3541.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 53W Tc | TO-220AB | 36A | 0.28Ohm | 38 mJ | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| R6011ENX | ROHM Semiconductor | $2.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 40W Tc | TO-220AB | 22A | 210 mJ | N-Channel | 670pF @ 25V | 390m Ω @ 3.8A, 10V | 4V @ 1mA | 11A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP12N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti12n65m5-datasheets-5764.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP12 | 3 | Single | 70W | 1 | FET General Purpose Power | 22.6 ns | 17.6ns | 23.4 ns | 15.6 ns | 8.5A | 25V | SILICON | SWITCHING | 70W Tc | TO-220AB | 650V | N-Channel | 900pF @ 100V | 4 V | 430m Ω @ 4.3A, 10V | 5V @ 250μA | 8.5A Tc | 22nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| RCX450N20 | ROHM Semiconductor | $2.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | 45A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 2.23W Ta 40W Tc | TO-220AB | 180A | 0.055Ohm | 160 mJ | N-Channel | 4200pF @ 25V | 55m Ω @ 22.5A, 10V | 5V @ 1mA | 45A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4410ZGPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfb4410zgpbf-datasheets-3472.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 9MOhm | 3 | EAR99 | No | Single | 230W | 1 | FET General Purpose Power | 16 ns | 52ns | 57 ns | 43 ns | 97A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 242 mJ | 100V | N-Channel | 4820pF @ 50V | 4 V | 9m Ω @ 58A, 10V | 4V @ 150μA | 97A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TSM3N90CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm3n90chc5g-datasheets-7803.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 900V | 94W Tc | N-Channel | 748pF @ 25V | 5.1 Ω @ 1.25A, 10V | 4V @ 250μA | 2.5A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF24NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw24nm60n-datasheets-2470.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 190MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF24 | 3 | Single | 30W | 1 | FET General Purpose Power | 11.5 ns | 16.5ns | 37 ns | 73 ns | 17A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 68A | 600V | N-Channel | 1400pF @ 50V | 190m Ω @ 8A, 10V | 4V @ 250μA | 17A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STP16N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf16n50m2-datasheets-4268.pdf | TO-220-3 | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP16N | NOT SPECIFIED | 13A | 500V | 110W Tc | N-Channel | 710pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 19.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R250CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa50r250cpxksa1-datasheets-3491.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 33W | 1 | Not Qualified | 35 ns | 14ns | 11 ns | 80 ns | 13A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 33W Tc | TO-220AB | 0.25Ohm | N-Channel | 1420pF @ 100V | 250m Ω @ 7.8A, 10V | 3.5V @ 520μA | 13A Tc | 36nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP16N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu16n65m2-datasheets-5114.pdf | TO-220-3 | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP16N | NOT SPECIFIED | 11A | 650V | 110W Tc | N-Channel | 718pF @ 100V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 19.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP80NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp80nf06-datasheets-3503.pdf | 60V | 80A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 4.535924g | No SVHC | 8mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | STP80N | 3 | Single | 300W | 1 | FET General Purpose Power | 25 ns | 85ns | 25 ns | 70 ns | 80A | 20V | SILICON | SWITCHING | 3V | 300W Tc | TO-220AB | 870 mJ | 60V | N-Channel | 3850pF @ 25V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FQP34N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp34n20-datasheets-3508.pdf | 200V | 31A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 180W | 1 | FET General Purpose Power | 40 ns | 280ns | 115 ns | 125 ns | 31A | 30V | SILICON | SWITCHING | 5V | 180W Tc | TO-220AB | 0.075Ohm | 640 mJ | 200V | N-Channel | 3100pF @ 25V | 5 V | 75m Ω @ 15.5A, 10V | 5V @ 250μA | 31A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IPA60R230P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r230p6xksa1-datasheets-7848.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | 6.000006g | 3 | Halogen Free | 1 | PG-TO220-FP | 1.45nF | 12 ns | 7ns | 6 ns | 38 ns | 16.8A | 20V | 600V | 600V | 33W Tc | 207mOhm | 600V | N-Channel | 1450pF @ 100V | 230mOhm @ 6.4A, 10V | 4.5V @ 530μA | 16.8A Tc | 31nC @ 10V | 230 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP150N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sti150n10f7-datasheets-5663.pdf | TO-220-3 | Lead Free | 13 Weeks | 329.988449mg | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP150 | 1 | Single | NOT SPECIFIED | 33 ns | 57ns | 33 ns | 72 ns | 110A | 20V | 100V | 250W Tc | N-Channel | 8115pF @ 50V | 4.2m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 117nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfs4410trlpbf-datasheets-9933.pdf | 100V | 96A | TO-220-3 | 10.6426mm | 9.017mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 10mOhm | 3 | 2.54mm | EAR99 | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 250W | 1 | FET General Purpose Power | 24 ns | 80ns | 50 ns | 55 ns | 88A | 20V | 100V | SILICON | SWITCHING | 4V | 200W Tc | TO-220AB | 38 ns | 75A | 220 mJ | 100V | N-Channel | 5150pF @ 50V | 4 V | 10m Ω @ 58A, 10V | 4V @ 150μA | 88A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SIHA20N50E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-siha20n50ee3-datasheets-3450.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | Unknown | 160mOhm | 3 | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 19A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 4V | 34W Tc | TO-220AB | 42A | 204 mJ | 550V | N-Channel | 1640pF @ 100V | 184m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FCP190N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcpf190n60-datasheets-5130.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 208W | 1 | FET General Purpose Power | 20 ns | 10ns | 5 ns | 64 ns | 20.2A | 20V | SILICON | SWITCHING | 600V | 2.5V | 208W Tc | TO-220AB | 60.6A | 400 mJ | 650V | N-Channel | 2950pF @ 25V | 199m Ω @ 10A, 10V | 3.5V @ 250μA | 20.2A Tc | 74nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STD7NM80-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std7nm80-datasheets-2102.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | No SVHC | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 260 | STD7 | 3 | Single | 30 | 90W | 1 | FET General Purpose Power | 20 ns | 8ns | 10 ns | 35 ns | 6.5A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 90W Tc | 26A | 240 mJ | 800V | N-Channel | 620pF @ 25V | 1.05 Ω @ 3.25A, 10V | 5V @ 250μA | 6.5A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STU5N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std5n95k3-datasheets-4636.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 260 | STU5N | 3 | Single | 90W | 1 | FET General Purpose Power | 17 ns | 7ns | 18 ns | 32 ns | 4A | 30V | SILICON | SWITCHING | 4V | 90W Tc | 4A | 950V | N-Channel | 460pF @ 25V | 3.5 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TSM60N380CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n380cprog-datasheets-7214.pdf | TO-220-3 Full Pack, Isolated Tab | NOT SPECIFIED | NOT SPECIFIED | 600V | 125W Tc | N-Channel | 1040pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 20.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF27N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf27n25t-datasheets-5194.pdf | 250V | 14A | TO-220-3 Full Pack | Lead Free | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | Single | 55W | 1 | FET General Purpose Power | 32 ns | 270ns | 120 ns | 80 ns | 14A | 30V | SILICON | ISOLATED | SWITCHING | 55W Tc | 56A | 600 mJ | 250V | N-Channel | 2450pF @ 25V | 110m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STP11NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp11nk50zfp-datasheets-8299.pdf | 500V | 10A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP11N | 3 | Single | 125W | 1 | FET General Purpose Power | 14.5 ns | 18ns | 15 ns | 41 ns | 10A | 30V | SILICON | SWITCHING | 3.75V | 125W Tc | TO-220AB | 40A | 0.52Ohm | 500V | N-Channel | 1390pF @ 25V | 520m Ω @ 4.5A, 10V | 4.5V @ 100μA | 10A Tc | 68nC @ 10V | 10V | ±30V |
