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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM8N80CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm8n80czc0g-datasheets-2715.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | 800V | 40.3W Tc | N-Channel | 1921pF @ 25V | 1.05 Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 41nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R280P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r280p7xksa1-datasheets-3541.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 53W Tc | TO-220AB | 36A | 0.28Ohm | 38 mJ | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6011ENX | ROHM Semiconductor | $2.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 40W Tc | TO-220AB | 22A | 210 mJ | N-Channel | 670pF @ 25V | 390m Ω @ 3.8A, 10V | 4V @ 1mA | 11A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF12N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sti12n65m5-datasheets-5764.pdf | TO-220-5 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 430mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF12 | 3 | Single | 25W | 1 | FET General Purpose Power | 22.6 ns | 9.5ns | 24 ns | 15.6 ns | 8.5A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 25W Tc | TO-220AB | 650V | N-Channel | 900pF @ 100V | 430m Ω @ 4.3A, 10V | 5V @ 250μA | 8.5A Tc | 22nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| RCX511N25 | ROHM Semiconductor | $5.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | not_compliant | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 51A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 2.23W Ta 40W Tc | TO-220AB | 204A | 0.065Ohm | 197.9 mJ | N-Channel | 7000pF @ 25V | 65m Ω @ 25.5A, 10V | 5V @ 1mA | 51A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STW9NK95Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw9nk95z-datasheets-3573.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STW9N | Single | 22 ns | 15ns | 22 ns | 51 ns | 7A | 20V | 950V | 160W Tc | N-Channel | 2256pF @ 25V | 1.38 Ω @ 3.6A, 10V | 4.5V @ 100μA | 7A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP18N55M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std18n55m5-datasheets-5024.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 240MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STP18N | 3 | Single | 90W | 1 | FET General Purpose Power | 9.5ns | 13 ns | 29 ns | 13A | 25V | SILICON | SWITCHING | 4V | 110W Tc | TO-220AB | 52A | 200 mJ | 550V | N-Channel | 1260pF @ 100V | 192m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 31nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STP140NF55 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb140nf55t4-datasheets-5190.pdf | 55V | 80A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 8mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP140 | 3 | Single | 300W | 1 | FET General Purpose Power | 30 ns | 150ns | 45 ns | 125 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | TO-220AB | 55V | N-Channel | 5300pF @ 25V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 142nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| R5021ANX | ROHM Semiconductor | $23.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 50W Tc | TO-220AB | 84A | 0.21Ohm | 29.6 mJ | N-Channel | 2300pF @ 25V | 210m Ω @ 10.5A, 10V | 4.5V @ 1mA | 21A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STFU24N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfu24n60m2-datasheets-3588.pdf | TO-220-3 Full Pack | 16 Weeks | EAR99 | NOT SPECIFIED | STFU2 | NOT SPECIFIED | 18A | 600V | 30W Tc | N-Channel | 1060pF @ 100V | 190m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP16N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu16n65m2-datasheets-5114.pdf | TO-220-3 | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP16N | NOT SPECIFIED | 11A | 650V | 110W Tc | N-Channel | 718pF @ 100V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 19.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP80NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp80nf06-datasheets-3503.pdf | 60V | 80A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 4.535924g | No SVHC | 8mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | STP80N | 3 | Single | 300W | 1 | FET General Purpose Power | 25 ns | 85ns | 25 ns | 70 ns | 80A | 20V | SILICON | SWITCHING | 3V | 300W Tc | TO-220AB | 870 mJ | 60V | N-Channel | 3850pF @ 25V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FQP34N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp34n20-datasheets-3508.pdf | 200V | 31A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 180W | 1 | FET General Purpose Power | 40 ns | 280ns | 115 ns | 125 ns | 31A | 30V | SILICON | SWITCHING | 5V | 180W Tc | TO-220AB | 0.075Ohm | 640 mJ | 200V | N-Channel | 3100pF @ 25V | 5 V | 75m Ω @ 15.5A, 10V | 5V @ 250μA | 31A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IPA60R230P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r230p6xksa1-datasheets-7848.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | 6.000006g | 3 | Halogen Free | 1 | PG-TO220-FP | 1.45nF | 12 ns | 7ns | 6 ns | 38 ns | 16.8A | 20V | 600V | 600V | 33W Tc | 207mOhm | 600V | N-Channel | 1450pF @ 100V | 230mOhm @ 6.4A, 10V | 4.5V @ 530μA | 16.8A Tc | 31nC @ 10V | 230 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP150N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sti150n10f7-datasheets-5663.pdf | TO-220-3 | Lead Free | 13 Weeks | 329.988449mg | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP150 | 1 | Single | NOT SPECIFIED | 33 ns | 57ns | 33 ns | 72 ns | 110A | 20V | 100V | 250W Tc | N-Channel | 8115pF @ 50V | 4.2m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 117nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfs4410trlpbf-datasheets-9933.pdf | 100V | 96A | TO-220-3 | 10.6426mm | 9.017mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 10mOhm | 3 | 2.54mm | EAR99 | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 250W | 1 | FET General Purpose Power | 24 ns | 80ns | 50 ns | 55 ns | 88A | 20V | 100V | SILICON | SWITCHING | 4V | 200W Tc | TO-220AB | 38 ns | 75A | 220 mJ | 100V | N-Channel | 5150pF @ 50V | 4 V | 10m Ω @ 58A, 10V | 4V @ 150μA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIHA20N50E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-siha20n50ee3-datasheets-3450.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | Unknown | 160mOhm | 3 | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 19A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 4V | 34W Tc | TO-220AB | 42A | 204 mJ | 550V | N-Channel | 1640pF @ 100V | 184m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP12N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti12n65m5-datasheets-5764.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP12 | 3 | Single | 70W | 1 | FET General Purpose Power | 22.6 ns | 17.6ns | 23.4 ns | 15.6 ns | 8.5A | 25V | SILICON | SWITCHING | 70W Tc | TO-220AB | 650V | N-Channel | 900pF @ 100V | 4 V | 430m Ω @ 4.3A, 10V | 5V @ 250μA | 8.5A Tc | 22nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| RCX450N20 | ROHM Semiconductor | $2.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | 45A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 2.23W Ta 40W Tc | TO-220AB | 180A | 0.055Ohm | 160 mJ | N-Channel | 4200pF @ 25V | 55m Ω @ 22.5A, 10V | 5V @ 1mA | 45A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4410ZGPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfb4410zgpbf-datasheets-3472.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 9MOhm | 3 | EAR99 | No | Single | 230W | 1 | FET General Purpose Power | 16 ns | 52ns | 57 ns | 43 ns | 97A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 242 mJ | 100V | N-Channel | 4820pF @ 50V | 4 V | 9m Ω @ 58A, 10V | 4V @ 150μA | 97A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TSM3N90CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm3n90chc5g-datasheets-7803.pdf | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 900V | 94W Tc | N-Channel | 748pF @ 25V | 5.1 Ω @ 1.25A, 10V | 4V @ 250μA | 2.5A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF24NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw24nm60n-datasheets-2470.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 190MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF24 | 3 | Single | 30W | 1 | FET General Purpose Power | 11.5 ns | 16.5ns | 37 ns | 73 ns | 17A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 68A | 600V | N-Channel | 1400pF @ 50V | 190m Ω @ 8A, 10V | 4V @ 250μA | 17A Tc | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STP16N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf16n50m2-datasheets-4268.pdf | TO-220-3 | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP16N | NOT SPECIFIED | 13A | 500V | 110W Tc | N-Channel | 710pF @ 100V | 280m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 19.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R250CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa50r250cpxksa1-datasheets-3491.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 33W | 1 | Not Qualified | 35 ns | 14ns | 11 ns | 80 ns | 13A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 33W Tc | TO-220AB | 0.25Ohm | N-Channel | 1420pF @ 100V | 250m Ω @ 7.8A, 10V | 3.5V @ 520μA | 13A Tc | 36nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF840ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840astrrpbf-datasheets-6542.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 8 Weeks | 2.387001g | Unknown | 3 | No | 1 | Single | 3.1W | 1 | I2PAK | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | N-Channel | 1018pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STF18N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf18n60m6-datasheets-3405.pdf | TO-220-3 Full Pack | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 25W Tc | N-Channel | 650pF @ 100V | 280m Ω @ 6.5A, 10V | 4.75V @ 250μA | 13A Tc | 16.8nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9630GPBF | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi9630g-datasheets-8512.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 700pF | 2.5kV | 12 ns | 27ns | 24 ns | 28 ns | 4.3A | 20V | 200V | -4V | 35W Tc | 300 ns | 800mOhm | -200V | P-Channel | 700pF @ 25V | 800mOhm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STF7NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu7nm60n-datasheets-2623.pdf | TO-220-5 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 900MOhm | 3 | EAR99 | No | STF7N | 3 | Single | 20W | 1 | FET General Purpose Power | 7 ns | 10ns | 12 ns | 26 ns | 5A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 20W Tc | TO-220AB | 5A | 20A | 600V | N-Channel | 363pF @ 50V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| FQPF85N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqpf85n06-datasheets-3424.pdf | 60V | 53A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 10mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 62W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 230ns | 170 ns | 175 ns | 53A | 25V | 60V | SILICON | ISOLATED | SWITCHING | 4V | 62W Tc | 820 mJ | 60V | N-Channel | 4120pF @ 25V | 4 V | 10m Ω @ 26.5A, 10V | 4V @ 250μA | 53A Tc | 112nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| SIHA6N80E-GE3 | Vishay Siliconix | $1.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha6n80ege3-datasheets-3351.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 800V | 31W Tc | 820mOhm | N-Channel | 827pF @ 100V | 940mOhm @ 3A, 10V | 4V @ 250μA | 5.4A Tc | 44nC @ 10V | 10V | ±30V |
