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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD18510KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | 2 | 6 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 4.44mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | CSD18510 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 250W Ta | 200A | 400A | 0.0026Ohm | 551 pF | N-Channel | 11400pF @ 15V | 2.6m Ω @ 100A, 10V | 2.3V @ 250μA | 274A Tc | 132nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbf20-datasheets-7507.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 6.5Ohm | 3 | No | 1 | Single | 54W | 1 | TO-220AB | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 4V | 54W Tc | 8Ohm | 900V | N-Channel | 490pF @ 25V | 4 V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TSM80N08CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n08czc0g-datasheets-3087.pdf | TO-220-3 | 75V | 113.6W Tc | N-Channel | 3905pF @ 30V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 91.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12A50E,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk12a50es5x-datasheets-3090.pdf | TO-220-3 Full Pack | 16 Weeks | 500V | 45W Tc | N-Channel | 1300pF @ 25V | 520m Ω @ 6A, 10V | 4V @ 1.2mA | 12A Ta | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP023N04NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb023n04ngatma1-datasheets-8976.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | 13 Weeks | No SVHC | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 167W | 1 | FET General Purpose Power | Not Qualified | 27 ns | 40 ns | 90A | 20V | 40V | SILICON | SWITCHING | 167W Tc | TO-220AB | 400A | 150 mJ | N-Channel | 10000pF @ 20V | 2.3m Ω @ 90A, 10V | 4V @ 95μA | 90A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFD310PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfd310-datasheets-8460.pdf | 4-DIP (0.300, 7.62mm) | 6.29mm | 3.37mm | 5mm | 8 Weeks | Unknown | 4 | No | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 170pF | 8 ns | 9.9ns | 9.9 ns | 21 ns | 350mA | 20V | 400V | 4V | 1W Ta | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 210mA, 10V | 4V @ 250μA | 350mA Ta | 17nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP6NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb6nk60zt4-datasheets-9805.pdf | 600V | 6A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | No SVHC | 1.2Ohm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP6N | 3 | Single | 110W | 1 | FET General Purpose Power | 14 ns | 14ns | 19 ns | 47 ns | 6A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 110W Tc | TO-220AB | 6A | 24A | 600V | N-Channel | 905pF @ 25V | 1.2 Ω @ 3A, 10V | 4.5V @ 100μA | 6A Tc | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TSM4N80CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4n80cic0g-datasheets-4689.pdf | TO-220-3 | 24 Weeks | TO-220 | 800V | 38.7W Tc | N-Channel | 955pF @ 25V | 3Ohm @ 1.2A, 10V | 4V @ 250μA | 4A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI4510GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfi4510gpbf-datasheets-3040.pdf | TO-220-3 Full Pack | Lead Free | 3 | 15 Weeks | 6.000006g | No SVHC | 3 | EAR99 | No | SINGLE | 42W | 1 | FET General Purpose Power | 16 ns | 33ns | 37 ns | 54 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2V | 42W Tc | TO-220AB | 206 mJ | 100V | N-Channel | 2998pF @ 50V | 13.5m Ω @ 21A, 10V | 4V @ 100μA | 35A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHD7N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihd7n60et5ge3-datasheets-2905.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 3 | Tin | No | GULL WING | 1 | Single | 78W | 1 | R-PSSO-G2 | 26 ns | 26ns | 28 ns | 48 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 600V | 609V | 2V | 78W Tc | TO-252AA | 7A | 0.6Ohm | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| TK40E10N1,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk40e10n1s1x-datasheets-3052.pdf | TO-220-3 | 3nF | 12 Weeks | 90A | 100V | 126W Tc | N-Channel | 3000pF @ 50V | 8.2m Ω @ 20A, 10V | 4V @ 500μA | 90A Tc | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP11N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std11n65m5-datasheets-6999.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP11N | Single | 85W | 1 | 23 ns | 23 ns | 9A | 25V | SILICON | SWITCHING | 85W Tc | TO-220AB | 9A | 0.48Ohm | 650V | N-Channel | 644pF @ 100V | 480m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP260PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp260pbf-datasheets-3060.pdf | 200V | 46A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 55mOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 5.2nF | 23 ns | 120ns | 94 ns | 100 ns | 46A | 20V | 200V | 2V | 280W Tc | 55mOhm | 200V | N-Channel | 5200pF @ 25V | 55mOhm @ 28A, 10V | 4V @ 250μA | 46A Tc | 230nC @ 10V | 55 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| R5011ANX | ROHM Semiconductor | $10.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | TO-220-3 Full Pack | Lead Free | 3 | 17 Weeks | yes | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 50W Tc | TO-220AB | 44A | 0.5Ohm | 8.1 mJ | N-Channel | 1000pF @ 25V | 500m Ω @ 5.5A, 10V | 4.5V @ 1mA | 11A Ta | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf830strlpbf-datasheets-8512.pdf | 500V | 1.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | 500V | 3.1W Ta 74W Tc | 1.5Ohm | 500V | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP10NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 470mOhm | 3 | EAR99 | No | e3 | Tin (Sn) | STP10 | 3 | Single | 70W | 1 | FET General Purpose Power | 9.2 ns | 10ns | 9.8 ns | 32 ns | 8A | 25V | SILICON | SWITCHING | 600V | 4V | 70W Tc | TO-220AB | 8A | 650V | N-Channel | 577pF @ 50V | 600m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 20nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| TK100A10N1,S4X | Toshiba Semiconductor and Storage | $3.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk100a10n1s4x-datasheets-3075.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | 6.000006g | 3 | yes | No | 1 | Single | 1 | 59 ns | 32ns | 45 ns | 140 ns | 100A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 45W Tc | TO-220AB | 222 mJ | N-Channel | 8800pF @ 50V | 3.8m Ω @ 50A, 10V | 4V @ 1mA | 100A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF11N40C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp11n40c-datasheets-4001.pdf | 400V | 10.5A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 44W | 1 | FET General Purpose Power | Not Qualified | 14 ns | 89ns | 81 ns | 81 ns | 10.5A | 30V | SILICON | ISOLATED | SWITCHING | 44W Tc | TO-220AB | 42A | 400V | N-Channel | 1090pF @ 25V | 530m Ω @ 5.25A, 10V | 4V @ 250μA | 10.5A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STP6N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6n62k3-datasheets-2052.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.2Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) | STP6N | 3 | Single | 90W | 1 | FET General Purpose Power | 22 ns | 12.5ns | 19 ns | 49 ns | 5.5A | 30V | SILICON | SWITCHING | 3.75V | 90W Tc | TO-220AB | 22A | 620V | N-Channel | 875pF @ 50V | 1.2 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.5A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHF10N40D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf10n40de3-datasheets-2938.pdf | TO-220-3 Full Pack | 10.63mm | 9.8mm | 4.83mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 33W | 1 | FET General Purpose Power | 12 ns | 18ns | 14 ns | 18 ns | 10A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 33W Tc | TO-220AB | 0.6Ohm | 400V | N-Channel | 526pF @ 100V | 600m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP11NK40Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb11nk40zt4-datasheets-9727.pdf | 400V | 9A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 490mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | STP11N | 3 | Single | 110W | 1 | FET General Purpose Power | 20 ns | 20ns | 18 ns | 40 ns | 9A | 30V | SILICON | SWITCHING | 3.75V | 110W Tc | TO-220AB | 9A | 400V | N-Channel | 930pF @ 25V | 550m Ω @ 4.5A, 10V | 4.5V @ 100μA | 9A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP62NS04Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp62ns04z-datasheets-2949.pdf | 62A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 15MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | 0015988_Rev_R | e3 | Tin (Sn) | STP62N | 3 | Single | 110W | 1 | FET General Purpose Power | 13 ns | 104ns | 42 ns | 41 ns | 62A | 18V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | TO-220AB | 40A | 248A | 500 mJ | 33V | N-Channel | 1330pF @ 25V | 15m Ω @ 30A, 10V | 4V @ 250μA | 62A Tc | 47nC @ 10V | 10V | Clamped | ||||||||||||||||||||||||||||||||||||
| IRF4104PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf4104spbf-datasheets-9182.pdf | 40V | 75A | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 5.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 140W | 1 | FET General Purpose Power | 16 ns | 130ns | 77 ns | 38 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | TO-220AB | 35 ns | 470A | 220 mJ | 40V | N-Channel | 3000pF @ 25V | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFR430APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 11 Weeks | 1.437803g | Unknown | 3 | 1 | Single | 110W | 1 | D-Pak | 490pF | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | 500V | 4.5V | 110W Tc | 1.7Ohm | 500V | N-Channel | 490pF @ 25V | 1.7Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.7 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60N900CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n900chc5g-datasheets-0232.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 50W Tc | TO-220AB | 4.5A | 13.5A | 0.9Ohm | 81 mJ | N-Channel | 480pF @ 100V | 900m Ω @ 2.3A, 10V | 4V @ 250μA | 4.5A Tc | 9.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF614SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf614strrpbf-datasheets-4053.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 11 Weeks | 1.437803g | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 7.6ns | 7 ns | 16 ns | 2.7A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 3.1W Ta 36W Tc | 2Ohm | N-Channel | 140pF @ 25V | 2 Ω @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RCX300N20 | ROHM Semiconductor | $5.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSFM-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 2.23W Ta 40W Tc | TO-220AB | 70A | 140A | 0.0427Ohm | 396 mJ | N-Channel | 3200pF @ 25V | 80m Ω @ 15A, 10V | 5V @ 1mA | 30A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP6NK60ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb6nk60zt4-datasheets-9805.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 4.535924g | No SVHC | 1.2Ohm | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP6N | 3 | Single | 32W | 1 | FET General Purpose Power | 14 ns | 14ns | 19 ns | 47 ns | 6A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 6A | 24A | 600V | N-Channel | 905pF @ 25V | 1.2 Ω @ 3A, 10V | 4.5V @ 100μA | 6A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| R6009KNX | ROHM Semiconductor | $7.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-220-3 Full Pack | 3 | 18 Weeks | No SVHC | 3 | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 5V | 48W Tc | TO-220AB | 9A | 27A | N-Channel | 540pF @ 25V | 535m Ω @ 2.8A, 10V | 5V @ 1mA | 9A Tc | 16.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI520GPBF | Vishay Siliconix | $2.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi520g-datasheets-4976.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | 270mOhm | 3 | No | 1 | Single | 37W | 1 | TO-220-3 | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 7.2A | 20V | 100V | 37W Tc | 270mOhm | N-Channel | 360pF @ 25V | 270mOhm @ 4.3A, 10V | 4V @ 250μA | 7.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V |
