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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| R8005ANX | ROHM Semiconductor | $0.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 3 | 10 Weeks | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 40W Tc | TO-220AB | 5A | 20A | 1.66 mJ | N-Channel | 485pF @ 25V | 2.08 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 21nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF286L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | TO-220-3F | 3.142nF | 56A | 80V | 2.2W Ta 37.5W Tc | N-Channel | 3142pF @ 40V | 6mOhm @ 20A, 10V | 3.3V @ 250μA | 13.5A Ta 56A Tc | 63nC @ 10V | 6 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR320PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irfu320pbf-datasheets-8190.pdf | 400V | 3.1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.8Ohm | 3 | No | 1 | Single | 42W | 1 | D-Pak | 350pF | 10 ns | 14ns | 13 ns | 30 ns | 3.1A | 20V | 400V | 4V | 2.5W Ta 42W Tc | 600 ns | 1.8Ohm | 400V | N-Channel | 350pF @ 25V | 1.8Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| R6004KNX | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 40W Tc | TO-220AB | 4A | 12A | 0.98Ohm | 46 mJ | N-Channel | 280pF @ 25V | 980m Ω @ 1.5A, 10V | 5V @ 1mA | 4A Tc | 10.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9110trpbf-datasheets-7143.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 1.2Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 10 ns | 27ns | 17 ns | 15 ns | 3.1A | 20V | SILICON | DRAIN | SWITCHING | 100V | -2V | 2.5W Ta 25W Tc | -100V | P-Channel | 200pF @ 25V | 1.2 Ω @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 8.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FCP4N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fcp4n60-datasheets-2853.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | 1.8g | No SVHC | 1.2Ohm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 50mW | 1 | FET General Purpose Power | Not Qualified | 16 ns | 45ns | 30 ns | 36 ns | 3.9A | 30V | 600V | SILICON | SWITCHING | 5V | 50W Tc | TO-220AB | 600V | N-Channel | 540pF @ 25V | 5 V | 1.2 Ω @ 2A, 10V | 5V @ 250μA | 3.9A Tc | 16.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRFP440PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irfp440-datasheets-7443.pdf | 500V | 8.8A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 850mOhm | 3 | 5.45mm | No | 1 | Single | 150W | 1 | TO-247-3 | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8.8A | 20V | 500V | 500V | 4V | 150W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 4 V | 850mOhm @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| PSMN012-80BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn01280bs118-datasheets-6921.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 148W | 1 | R-PSSO-G2 | 19 ns | 16ns | 6 ns | 33 ns | 74A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 148W Tc | 295A | 73V | N-Channel | 2782pF @ 12V | 11m Ω @ 15A, 10V | 4V @ 1mA | 74A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPAW60R280P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipaw60r280p7sxksa1-datasheets-2874.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 24W Tc | TO-220AB | 36A | 0.28Ohm | 38 mJ | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75332P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-huf75332p3-datasheets-2877.pdf | 55V | 60A | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 145W | 1 | FET General Purpose Power | 9 ns | 90ns | 45 ns | 50 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 145W Tc | TO-220AB | 55V | N-Channel | 1300pF @ 25V | 19m Ω @ 60A, 10V | 4V @ 250μA | 60A Tc | 85nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| R6004ENX | ROHM Semiconductor | $4.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 40W Tc | TO-220AB | 4A | 8A | 0.98Ohm | 46 mJ | N-Channel | 250pF @ 25V | 980m Ω @ 1.5A, 10V | 4V @ 1mA | 4A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| VN2450N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/microchiptechnology-vn2450n8g-datasheets-3016.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 13Ohm | 3 | EAR99 | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | Not Qualified | 10 ns | 10ns | 20 ns | 25 ns | 200mA | 20V | 1W Ta | 500V | N-Channel | 150pF @ 25V | 13 Ω @ 400mA, 10V | 4V @ 1mA | 200mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOT8N80L | Alpha & Omega Semiconductor Inc. | $6.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 3 | 18 Weeks | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | 7.4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 245W Tc | TO-220AB | 26A | 433 mJ | N-Channel | 1650pF @ 25V | 1.63 Ω @ 4A, 10V | 4.5V @ 250μA | 7.4A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF25N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std25n10f7-datasheets-7561.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 37 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF25 | 1 | Single | 9.8 ns | 14ns | 4.6 ns | 14.8 ns | 19A | 20V | 25W Tc | 100V | N-Channel | 920pF @ 50V | 35m Ω @ 12.5A, 10V | 4.5V @ 250μA | 19A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZDX050N50 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSFM-T3 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | TO-220AB | 5A | N-Channel | 600pF @ 25V | 1.5 Ω @ 2.5A, 10V | 4.4V @ 1mA | 5A Tc | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4NB65CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4nb65chc5g-datasheets-6986.pdf | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | 650V | 70W Tc | N-Channel | 549pF @ 25V | 3.37 Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 13.46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAN70R900P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipan70r900p7sxksa1-datasheets-2825.pdf | TO-220-3 Full Pack | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 17.9W Tc | N-Channel | 211pF @ 400V | 900m Ω @ 1.1A, 10V | 3.5V @ 60μA | 6A Tc | 6.8nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZDX080N50 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSFM-T3 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | TO-220AB | 8A | 24A | 0.85Ohm | N-Channel | 1120pF @ 25V | 850m Ω @ 4A, 10V | 4V @ 1mA | 8A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8874 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp8874-datasheets-2831.pdf | 30V | 121A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 10 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 110W | 1 | FET General Purpose Power | 10 ns | 128ns | 31 ns | 44 ns | 114A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-220AB | 80A | 0.0066Ohm | 30V | N-Channel | 3130pF @ 15V | 5.3m Ω @ 40A, 10V | 2.5V @ 250μA | 16A Ta 114A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPA60R600P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa60r600p7sxksa1-datasheets-9544.pdf | TO-220-3 Full Pack | 20.7mm | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 21W | 1 | 150°C | R-PSFM-T3 | 7 ns | 37 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 21W Tc | TO-220AB | 0.6Ohm | 600V | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STP19NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb19nf20-datasheets-2760.pdf | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 160mOhm | 3 | EAR99 | No | e3 | Tin (Sn) | STP19N | 3 | Single | 90W | 1 | FET General Purpose Power | 11.5 ns | 22ns | 11 ns | 19 ns | 7.5A | 20V | SILICON | SWITCHING | 3V | 90W Tc | TO-220AB | 60A | 200V | N-Channel | 800pF @ 25V | 160m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFI614GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfi614g-datasheets-8520.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 8 Weeks | 6.000006g | No SVHC | 2kOhm | 3 | No | 1 | Single | TO-220-3 | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.1A | 20V | 250V | 250V | 4V | 23W Tc | 2Ohm | N-Channel | 140pF @ 25V | 4 V | 2Ohm @ 1.3A, 10V | 4V @ 250μA | 2.1A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| RCX200N20 | ROHM Semiconductor | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSFM-T3 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 2.23W Ta 40W Tc | TO-220AB | 70A | 140A | 0.0427Ohm | 396 mJ | N-Channel | 1900pF @ 25V | 130m Ω @ 10A, 10V | 5V @ 1mA | 20A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF390N15A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf390n15a-datasheets-2786.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 8 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | Single | 22W | 1 | FET General Purpose Power | 14 ns | 10ns | 5 ns | 20 ns | 15A | 20V | SILICON | ISOLATED | SWITCHING | 22W Tc | TO-220AB | 60A | 0.04Ohm | 78 mJ | 150V | N-Channel | 1285pF @ 75V | 40m Ω @ 15A, 10V | 4V @ 250μA | 15A Tc | 18.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPA80R1K4CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa80r1k4cexksa1-datasheets-7099.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 3.9A | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 31W Tc | TO-220AB | 12A | 170 mJ | N-Channel | 570pF @ 100V | 1.4 Ω @ 2.3A, 10V | 3.9V @ 240μA | 3.9A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R950C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-ipa60r950c6xksa1-datasheets-2804.pdf | TO-220-3 Full Pack | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 26W | 1 | Not Qualified | 10 ns | 8ns | 13 ns | 60 ns | 4.4A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 26W Tc | TO-220AB | 0.95Ohm | 46 mJ | N-Channel | 280pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.4A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPI040N06N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp040n06n3ghksa1-datasheets-8164.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.36mm | 9.45mm | 4.52mm | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Halogen Free | 3 | Single | 188W | 1 | FET General Purpose Power | 30 ns | 70ns | 5 ns | 40 ns | 90A | 20V | 60V | SILICON | SWITCHING | 188W Tc | 0.004Ohm | 165 mJ | 60V | N-Channel | 11000pF @ 30V | 4m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| GA05JT01-46 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga05jt0146-datasheets-2708.pdf | TO-46-3 | 18 Weeks | 3 | 9A | 100V | 20W Tc | 240m Ω @ 5A | 9A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT41F100J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt41f100j-datasheets-2710.pdf | 1kV | 41A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 22 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 4 weeks ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 960W | 1 | 55 ns | 55ns | 55 ns | 235 ns | 41A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 960W Tc | 260A | 0.2Ohm | N-Channel | 18500pF @ 25V | 210m Ω @ 33A, 10V | 5V @ 5mA | 42A Tc | 570nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FQPF9N25C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqpf9n25ct-datasheets-0437.pdf | 250V | 8.8A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 5 Weeks | 2.27g | 430MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 15 ns | 85ns | 65 ns | 90 ns | 8.8A | 30V | SILICON | ISOLATED | SWITCHING | 38W Tc | TO-220AB | 285 mJ | 250V | N-Channel | 710pF @ 25V | 430m Ω @ 4.4A, 10V | 4V @ 250μA | 8.8A Tc | 35nC @ 10V | 10V | ±30V |
