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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFN55N50F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixfn55n50f-datasheets-2540.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | Not Qualified | 20ns | 9.6 ns | 45 ns | 55A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600W Tc | 220A | 0.085Ohm | 3000 mJ | 500V | N-Channel | 6700pF @ 25V | 85m Ω @ 27.5A, 10V | 5.5V @ 8mA | 55A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT31M100L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt31m100b2-datasheets-4101.pdf | 1kV | 31A | TO-264-3, TO-264AA | Lead Free | 3 | 21 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.04kW | 1 | Not Qualified | R-PSFM-T3 | 39 ns | 35ns | 33 ns | 130 ns | 32A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1040W Tc | 0.38Ohm | N-Channel | 8500pF @ 25V | 400m Ω @ 16A, 10V | 5V @ 2.5mA | 32A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APT48M80L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt48m80b2-datasheets-0832.pdf | 800V | 48A | TO-264-3, TO-264AA | Lead Free | 3 | 29 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | R-PSFM-T3 | 55 ns | 75ns | 70 ns | 230 ns | 49A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1135W Tc | 0.2Ohm | N-Channel | 9330pF @ 25V | 200m Ω @ 24A, 10V | 5V @ 2.5mA | 49A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| APT50M38JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m38jll-datasheets-2547.pdf | 500V | 88A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 23 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | Single | 694W | 1 | FET General Purpose Power | 17 ns | 22ns | 4 ns | 50 ns | 88A | 30V | SILICON | ISOLATED | SWITCHING | 694W Tc | 352A | 0.038Ohm | 3600 mJ | 500V | N-Channel | 12000pF @ 25V | 38m Ω @ 44A, 10V | 5V @ 5mA | 88A Tc | 270nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFK26N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixfk26n120p-datasheets-2550.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 960W | 1 | FET General Purpose Power | 56 ns | 55ns | 58 ns | 76 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 960W Tc | 60A | 0.46Ohm | 1.2kV | N-Channel | 16000pF @ 25V | 460m Ω @ 13A, 10V | 6.5V @ 1mA | 26A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT10045JLL | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-apt10045jll-datasheets-2552.pdf | 1kV | 21A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 19 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 460W | 1 | FET General Purpose Power | 10 ns | 5ns | 8 ns | 30 ns | 21A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 460W Tc | 2500 mJ | 1kV | N-Channel | 4350pF @ 25V | 450m Ω @ 11.5A, 10V | 5V @ 2.5mA | 21A Tc | 154nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT60M75JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt60m75jfll-datasheets-2564.pdf | 600V | 58A | SOT-227-4, miniBLOC | Lead Free | 4 | 34 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 23 ns | 15ns | 10 ns | 55 ns | 58A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 595W Tc | 232A | 0.075Ohm | 3200 mJ | N-Channel | 8930pF @ 25V | 75m Ω @ 29A, 10V | 5V @ 5mA | 58A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT14M120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt14m120b-datasheets-2515.pdf | 1.2kV | 14A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 18 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 625W | 1 | R-PSFM-T3 | 26 ns | 15ns | 24 ns | 85 ns | 14A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 625W Tc | TO-247AD | 1.2kV | N-Channel | 4765pF @ 25V | 1.2 Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFX320N17T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk320n17t2-datasheets-2200.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 247 | 1 | yes | EAR99 | AVALANCHE RATED | 100A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 170V | 320A | 46 ns | 170ns | 230 ns | 115 ns | 320A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1670W Tc | 800A | 0.0052Ohm | 5000 mJ | N-Channel | 45000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 320A Tc | 640nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTH7P50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixth7p50-datasheets-2520.pdf | -500V | -7A | TO-247-3 | Lead Free | 3 | 8 Weeks | 1.5Ohm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Other Transistors | Not Qualified | 27ns | 35 ns | 35 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 500V | 180W Tc | TO-247AD | 7A | 28A | -500V | P-Channel | 3400pF @ 25V | 1.5 Ω @ 500mA, 10V | 5V @ 250μA | 7A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTT82N25P | IXYS | $8.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq82n25p-datasheets-3903.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 22 ns | 78 ns | 82A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 200A | 0.035Ohm | 1000 mJ | 250V | N-Channel | 4800pF @ 25V | 35m Ω @ 41A, 10V | 5V @ 250μA | 82A Tc | 142nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TK39N60W,S1VF | Toshiba Semiconductor and Storage | $4.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk39n60ws1vf-datasheets-2525.pdf | TO-247-3 | 4.1nF | 16 Weeks | 65mOhm | Single | TO-247 | 4.1nF | 50ns | 9 ns | 200 ns | 38.8A | 30V | 600V | 270W Tc | 55mOhm | N-Channel | 4100pF @ 300V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 38.8A Ta | 110nC @ 10V | Super Junction | 65 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50M65JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m65jll-datasheets-2530.pdf | 500V | 58A | SOT-227-4, miniBLOC | Lead Free | 4 | 23 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 520W | 1 | FET General Purpose Power | 12 ns | 28ns | 30 ns | 29 ns | 58A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 232A | 0.065Ohm | 3000 mJ | N-Channel | 7010pF @ 25V | 65m Ω @ 29A, 10V | 5V @ 2.5mA | 58A Tc | 141nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFB44N100Q3 | IXYS | $39.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb44n100q3-datasheets-2532.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 20 Weeks | 220MOhm | 264 | 3 | Single | 1.56kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 48 ns | 300ns | 66 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 1560W Tc | 110A | 4000 mJ | 1kV | N-Channel | 13600pF @ 25V | 220m Ω @ 22A, 10V | 6.5V @ 8mA | 44A Tc | 264nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFK64N60Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx64n60q3-datasheets-3702.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 1.25kW | 1 | FET General Purpose Power | 45 ns | 300ns | 50 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 250A | 0.095Ohm | 600V | N-Channel | 9930pF @ 25V | 95m Ω @ 32A, 10V | 6.5V @ 4mA | 64A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTB62N50L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtb62n50l-datasheets-2538.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 100mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 800W | 1 | FET General Purpose Power | Not Qualified | 85ns | 75 ns | 110 ns | 62A | 30V | SILICON | DRAIN | SWITCHING | 800W Tc | 150A | 5000 mJ | 500V | N-Channel | 11500pF @ 25V | 100m Ω @ 31A, 20V | 5.5V @ 250μA | 62A Tc | 550nC @ 20V | 20V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXKK85N60C | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixkk85n60c-datasheets-2508.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 12 Weeks | 36MOhm | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 10 ns | 110 ns | 85A | 20V | SILICON | SWITCHING | 1800 mJ | 600V | N-Channel | 36m Ω @ 55A, 10V | 4V @ 4mA | 85A Tc | 650nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTH40N30 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixtm40n30-datasheets-4851.pdf | 300V | 40A | TO-247-3 | Lead Free | 3 | 8 Weeks | Unknown | 85mOhm | 3 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 40ns | 40 ns | 75 ns | 40A | 20V | 300V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 300V | N-Channel | 4600pF @ 25V | 4 V | 85m Ω @ 500mA, 10V | 4V @ 250μA | 40A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT17F100B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt17f100b-datasheets-2471.pdf | 1kV | 17A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 38.000013g | yes | HIGH RELIABILITY, AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 625W | 1 | R-PSFM-T3 | 29 ns | 31ns | 28 ns | 105 ns | 17A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 625W Tc | TO-247AB | 68A | 0.8Ohm | N-Channel | 4845pF @ 25V | 800m Ω @ 9A, 10V | 5V @ 1mA | 17A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTX120N65X2 | IXYS | $43.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtx120n65x2-datasheets-2474.pdf | TO-247-3 | 15 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 120A | 650V | 1250W Tc | N-Channel | 13600pF @ 25V | 24m Ω @ 60A, 10V | 4.5V @ 8mA | 120A Tc | 240nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH20N85X | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfp20n85x-datasheets-2292.pdf | TO-247-3 | 19 Weeks | yes | 20A | 850V | 540W Tc | N-Channel | 1660pF @ 25V | 330m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 20A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN106N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | 200V | 106A | SOT-227-4, miniBLOC | Lead Free | 8 Weeks | 20MOhm | 4 | No | 520W | 1 | SOT-227B | 9nF | 80ns | 30 ns | 75 ns | 106A | 20V | 200V | 521W Tc | 20mOhm | 200V | N-Channel | 9000pF @ 25V | 20mOhm @ 500mA, 10V | 4V @ 8mA | 106A Tc | 380nC @ 10V | 20 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT17F120J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt17f120j-datasheets-2481.pdf | 1.2kV | 17A | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 545W | 1 | 50 ns | 31ns | 48 ns | 170 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 545W Tc | 0.58Ohm | N-Channel | 9670pF @ 25V | 580m Ω @ 14A, 10V | 5V @ 2.5mA | 18A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFR80N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n50p-datasheets-2484.pdf | 500V | 80A | ISOPLUS247™ | Lead Free | 3 | No SVHC | 72MOhm | 247 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | FET General Purpose Power | R-PSIP-T3 | 2.5kV | 27ns | 16 ns | 70 ns | 45A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 360W Tc | 200A | 3500 mJ | 500V | N-Channel | 12700pF @ 25V | 72m Ω @ 40A, 10V | 5V @ 8mA | 45A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFR80N50Q3 | IXYS | $31.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n50q3-datasheets-2486.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 72MOhm | 247 | AVALANCHE RATED, UL RECOGNIZED | 3 | Single | 570W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30 ns | 250ns | 43 ns | 50A | 30V | SILICON | ISOLATED | SWITCHING | 570W Tc | 45A | 240A | 5000 mJ | 500V | N-Channel | 10000pF @ 25V | 72m Ω @ 40A, 10V | 6.5V @ 8mA | 50A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFX66N85X | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfk66n85x-datasheets-8865.pdf | TO-247-3 | 19 Weeks | yes | 66A | 850V | 1250W Tc | N-Channel | 8900pF @ 25V | 65m Ω @ 500mA, 10V | 5.5V @ 8mA | 66A Tc | 230nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN220N20X3 | IXYS | $32.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/ixys-ixfn220n20x3-datasheets-2491.pdf | SOT-227-4, miniBLOC | 19 Weeks | 200V | 390W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 160A Tc | 204nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN73N30 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixfk73n30-datasheets-0777.pdf | 300V | 73A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | No SVHC | 45mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 520W | 1 | FET General Purpose Power | R-PUFM-X4 | 80ns | 50 ns | 100 ns | 73A | 20V | 300V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 500W Tc | 200 ns | 292A | 300V | N-Channel | 9000pF @ 25V | 4 V | 45m Ω @ 500mA, 10V | 4V @ 8mA | 73A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTH75N10 | IXYS | $7.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth67n10-datasheets-1685.pdf | 100V | 75A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 20mOhm | 3 | yes | EAR99 | No | 3 | Single | 300W | 1 | FET General Purpose Power | 60ns | 30 ns | 100 ns | 75A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 100V | N-Channel | 4500pF @ 25V | 4 V | 20m Ω @ 37.5A, 10V | 4V @ 4mA | 75A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| APT10078BLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10078sllg-datasheets-0917.pdf | 1kV | 14A | TO-247-3 | Lead Free | 3 | 31 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 403W | 1 | R-PSFM-T3 | 9 ns | 8ns | 9 ns | 30 ns | 14A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 403W Tc | TO-247AD | 56A | 0.78Ohm | N-Channel | 2525pF @ 25V | 780m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 95nC @ 10V | 10V | ±30V |
