Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTX120N65X2 | IXYS | $43.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtx120n65x2-datasheets-2474.pdf | TO-247-3 | 15 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 120A | 650V | 1250W Tc | N-Channel | 13600pF @ 25V | 24m Ω @ 60A, 10V | 4.5V @ 8mA | 120A Tc | 240nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH20N85X | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfp20n85x-datasheets-2292.pdf | TO-247-3 | 19 Weeks | yes | 20A | 850V | 540W Tc | N-Channel | 1660pF @ 25V | 330m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 20A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN106N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk90n20-datasheets-2052.pdf | 200V | 106A | SOT-227-4, miniBLOC | Lead Free | 8 Weeks | 20MOhm | 4 | No | 520W | 1 | SOT-227B | 9nF | 80ns | 30 ns | 75 ns | 106A | 20V | 200V | 521W Tc | 20mOhm | 200V | N-Channel | 9000pF @ 25V | 20mOhm @ 500mA, 10V | 4V @ 8mA | 106A Tc | 380nC @ 10V | 20 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTH24P20 | IXYS | $9.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtt24p20-datasheets-4098.pdf | -200V | -24A | TO-247-3 | Lead Free | 3 | 28 Weeks | 150mOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | Other Transistors | 29ns | 28 ns | 68 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | 96A | -200V | P-Channel | 4200pF @ 25V | 150m Ω @ 500mA, 10V | 5V @ 250μA | 24A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFX32N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n100p-datasheets-0781.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | 55ns | 43 ns | 76 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 960W Tc | 75A | 1500 mJ | 1kV | N-Channel | 14200pF @ 25V | 320m Ω @ 16A, 10V | 6.5V @ 1mA | 32A Tc | 225nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFH50N60P3 | IXYS | $9.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfq50n60p3-datasheets-1666.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 31 ns | 20ns | 17 ns | 62 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1040W Tc | TO-247AD | 125A | 0.145Ohm | 1000 mJ | 600V | N-Channel | 6300pF @ 25V | 145m Ω @ 500mA, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTH48N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixth48n65x2-datasheets-2444.pdf | TO-247-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 48A | 650V | 660W Tc | N-Channel | 4420pF @ 25V | 68m Ω @ 24A, 10V | 4.5V @ 4mA | 48A Tc | 77nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH30N50L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixtt30n50l2-datasheets-3664.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 117ns | 40 ns | 94 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 400W Tc | TO-247AD | 60A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 8100pF @ 25V | 2.5 V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFK100N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixfx100n65x2-datasheets-8750.pdf | TO-264-3, TO-264AA | 19 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 100A | 650V | 1040W Tc | N-Channel | 11300pF @ 25V | 30m Ω @ 50A, 10V | 5.5V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ180N10T | IXYS | $22.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth180n10t-datasheets-4587.pdf | TO-3P-3, SC-65-3 | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 54ns | 31 ns | 42 ns | 180A | SILICON | DRAIN | SWITCHING | 480W Tc | 450A | 0.0064Ohm | 750 mJ | 100V | N-Channel | 6900pF @ 25V | 6.4m Ω @ 25A, 10V | 4.5V @ 250μA | 180A Tc | 151nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TK62N60W,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk62n60ws1vf-datasheets-2457.pdf | TO-247-3 | 16 Weeks | Single | 58ns | 15 ns | 310 ns | 61.8A | 30V | 400W Tc | 600V | N-Channel | 6500pF @ 300V | 40m Ω @ 30.9A, 10V | 3.7V @ 3.1mA | 61.8A Ta | 180nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG70N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg70n60efge3-datasheets-2460.pdf | TO-247-3 | 3 | 14 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 520W Tc | TO-247AC | 229A | 0.038Ohm | 1706 mJ | N-Channel | 7500pF @ 100V | 38m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 380nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH88N30P | IXYS | $1.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq88n30p-datasheets-2251.pdf | TO-247-3 | Lead Free | 3 | 35 Weeks | 40MOhm | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 600W | 1 | R-PSFM-T3 | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | TO-247AD | 220A | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 250μA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT106N60B2C6 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt106n60b2c6-datasheets-2467.pdf | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 35mOhm | 3 | IN PRODUCTION (Last Updated: 2 days ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | SINGLE | 3 | 833W | 1 | 25 ns | 79ns | 164 ns | 277 ns | 106A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 833W Tc | 2200 mJ | N-Channel | 8390pF @ 25V | 35m Ω @ 53A, 10V | 3.5V @ 3.4mA | 106A Tc | 308nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| APT47N60SC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt47n60bc3g-datasheets-2051.pdf | 600V | 47A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 25 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 417W | 1 | D3 [S] | 7.015nF | 18 ns | 27ns | 8 ns | 110 ns | 47A | 20V | 600V | 417W Tc | N-Channel | 7015pF @ 25V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 47A Tc | 260nC @ 10V | 70 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK39A60W,S4VX | Toshiba Semiconductor and Storage | $23.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk39a60ws4vx-datasheets-2433.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | 6.000006g | 3 | No | 1 | Single | 1 | 80 ns | 50ns | 9 ns | 200 ns | 38.8A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 50W Tc | TO-220AB | 0.065Ohm | 608 mJ | N-Channel | 4100pF @ 300V | 65m Ω @ 19.4A, 10V | 3.7V @ 1.9mA | 38.8A Ta | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFQ72N30X3 | IXYS | $10.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh72n30x3-datasheets-4703.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ120N25X3 | IXYS | $10.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft120n25x3hv-datasheets-4945.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 250V | 520W Tc | N-Channel | 7870pF @ 25V | 12m Ω @ 60A, 10V | 4.5V @ 4mA | 120A Tc | 122nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH26P20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp26p20p-datasheets-1592.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 33ns | 21 ns | 46 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | TO-247AD | 70A | 0.17Ohm | 1500 mJ | -200V | P-Channel | 2740pF @ 25V | 170m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPP60R170CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipp60r170cfd7xksa1-datasheets-2399.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 75W Tc | TO-220AB | 14A | 51A | 0.17Ohm | 60 mJ | N-Channel | 1199pF @ 400V | 170m Ω @ 6A, 10V | 4.5V @ 300μA | 14A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFT44N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk44n50p-datasheets-1512.pdf | 500V | 44A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 3 | yes | AVALANCHE RATED | 44A | e3 | Matte Tin (Sn) | 500V | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | R-PSSO-G2 | 29ns | 27 ns | 85 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 658W Tc | 0.14Ohm | 1700 mJ | 500V | N-Channel | 5440pF @ 25V | 140m Ω @ 22A, 10V | 5V @ 4mA | 44A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFQ140N20X3 | IXYS | $11.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh140n20x3-datasheets-4865.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 200V | 520W Tc | N-Channel | 7660pF @ 25V | 9.6m Ω @ 70A, 10V | 4.5V @ 4mA | 140A Tc | 127nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK98N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx98n50p3-datasheets-8690.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | 35 ns | 8ns | 6 ns | 65 ns | 98A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1300W Tc | 245A | 0.05Ohm | 2000 mJ | 500V | N-Channel | 13100pF @ 25V | 50m Ω @ 500mA, 10V | 5V @ 8mA | 98A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TK31N60W,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk31n60ws1vf-datasheets-2412.pdf | TO-247-3 | 3nF | 16 Weeks | 88mOhm | unknown | Single | 32ns | 8.5 ns | 165 ns | 30.8A | 30V | 230W Tc | 600V | N-Channel | 3000pF @ 300V | 88m Ω @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5010LLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-apt5010lllg-datasheets-1374.pdf | 500V | 46A | TO-264-3, TO-264AA | Lead Free | 3 | 23 Weeks | 3 | EAR99 | No | e3 | PURE MATTE TIN | SINGLE | 3 | 520W | 1 | 11 ns | 15ns | 3 ns | 25 ns | 46A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | N-Channel | 4360pF @ 25V | 100m Ω @ 23A, 10V | 5V @ 2.5mA | 46A Tc | 95nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH180N20X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft180n20x3hv-datasheets-1427.pdf | TO-247-3 | 19 Weeks | 200V | 780W Tc | N-Channel | 10300pF @ 25V | 7.5m Ω @ 90A, 10V | 4.5V @ 4mA | 180A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ60N50P3 | IXYS | $9.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh60n50p3-datasheets-1724.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 26 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 18 ns | 16ns | 8 ns | 37 ns | 60A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 150A | 0.1Ohm | 1000 mJ | 500V | N-Channel | 6250pF @ 25V | 100m Ω @ 30A, 10V | 5V @ 4mA | 60A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTX102N65X2 | IXYS | $12.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtk102n65x2-datasheets-4817.pdf | TO-247-3 | 15 Weeks | 102A | 650V | 1040W Tc | N-Channel | 10900pF @ 25V | 30m Ω @ 51A, 10V | 5V @ 250μA | 102A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW35N60C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw35n60c3fksa1-datasheets-2424.pdf | TO-247-3 | 3 | 8 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 313W Tc | TO-247AA | 34.6A | 103.8A | 0.1Ohm | 1500 mJ | N-Channel | 4500pF @ 25V | 100m Ω @ 21.9A, 10V | 3.9V @ 1.9mA | 34.6A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH50N85X | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfk50n85x-datasheets-1394.pdf | TO-247-3 | 19 Weeks | yes | unknown | 50A | 850V | 890W Tc | N-Channel | 4480pF @ 25V | 105m Ω @ 500mA, 10V | 5.5V @ 4mA | 50A Tc | 152nC @ 10V | 10V | ±30V |
