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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFQ120N25X3 | IXYS | $10.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft120n25x3hv-datasheets-4945.pdf | TO-3P-3, SC-65-3 | 19 Weeks | 250V | 520W Tc | N-Channel | 7870pF @ 25V | 12m Ω @ 60A, 10V | 4.5V @ 4mA | 120A Tc | 122nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBA90N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfba90n20dpbf-datasheets-2334.pdf | 200V | 98A | TO-273AA | 10.9982mm | 15.0114mm | 5mm | Lead Free | 3 | 25 Weeks | No SVHC | 23Ohm | 3 | EAR99 | AVALANCHE RATED | No | Single | 650W | 1 | FET General Purpose Power | 23 ns | 160ns | 77 ns | 39 ns | 98A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5V | 650W Tc | 95A | 960 mJ | 200V | N-Channel | 6080pF @ 25V | 5 V | 23m Ω @ 59A, 10V | 5V @ 250μA | 98A Tc | 240nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IRFPE40PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-irfpe40-datasheets-0407.pdf | 800V | 5.4A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 8 Weeks | 38.000013g | 2Ohm | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 150W | 1 | FET General Purpose Power | 16 ns | 36ns | 32 ns | 100 ns | 5.4A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-247AC | 830 ns | 22A | 490 mJ | 800V | N-Channel | 1900pF @ 25V | 4 V | 2 Ω @ 3.2A, 10V | 4V @ 250μA | 5.4A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| FQA8N90C-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqa8n90cf109-datasheets-2347.pdf | TO-3P-3, SC-65-3 | 3 | 4 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | MATTE TIN | Single | 240W | 1 | FET General Purpose Power | 40 ns | 110ns | 70 ns | 70 ns | 8A | 30V | SILICON | SWITCHING | 240W Tc | 8A | 850 mJ | 900V | N-Channel | 2080pF @ 25V | 1.9 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRFP21N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfp21n60l-datasheets-9473.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 330W | 1 | TO-247-3 | 4nF | 20 ns | 58ns | 10 ns | 33 ns | 21A | 30V | 600V | 5V | 330W Tc | 320mOhm | 600V | N-Channel | 4000pF @ 25V | 5 V | 320mOhm @ 13A, 10V | 5V @ 250μA | 21A Tc | 150nC @ 10V | 320 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTH8P50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtt8p50-datasheets-3920.pdf | -500V | -8A | TO-247-3 | Lead Free | 3 | 28 Weeks | 1.2Ohm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Other Transistors | Not Qualified | 27ns | 35 ns | 35 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 500V | 180W Tc | TO-247AD | 8A | -500V | P-Channel | 3400pF @ 25V | 1.2 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| APT7F120B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt7f120b-datasheets-2364.pdf | 1.2kV | 6.6A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 38.000013g | 2.4Ohm | yes | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 335W | 1 | R-PSFM-T3 | 14 ns | 8ns | 13 ns | 45 ns | 7A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 335W Tc | TO-247AB | 7A | 28A | 575 mJ | N-Channel | 2565pF @ 25V | 2.9 Ω @ 3A, 10V | 5V @ 1mA | 7A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IRFI9634GPBF | Vishay Siliconix | $3.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi9634g-datasheets-1591.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 1Ohm | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 680pF | 12 ns | 23ns | 21 ns | 34 ns | 4.1A | 20V | 250V | -4V | 35W Tc | 1Ohm | -250V | P-Channel | 680pF @ 25V | -4 V | 1Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFH24N80P | IXYS | $5.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n80p-datasheets-4174.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 400MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 650W | 1 | FET General Purpose Power | 32 ns | 27ns | 24 ns | 75 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 5V | 650W Tc | TO-247AD | 55A | 800V | N-Channel | 7200pF @ 25V | 400m Ω @ 12A, 10V | 5V @ 4mA | 24A Tc | 105nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTH20N65X | IXYS | $9.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp20n65x-datasheets-3922.pdf | TO-247-3 | 15 Weeks | 20A | 650V | 320W Tc | N-Channel | 1390pF @ 25V | 210m Ω @ 10A, 10V | 5.5V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT56M50L | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-apt56m50b2-datasheets-4368.pdf | 500V | 56A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 18 Weeks | 10.6g | 100mOhm | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 780W | 1 | R-PSFM-T3 | 38 ns | 45ns | 33 ns | 100 ns | 56A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 780W Tc | N-Channel | 8800pF @ 25V | 100m Ω @ 28A, 10V | 5V @ 2.5mA | 56A Tc | 220nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| NDUL09N150CG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-ndul09n150cg-datasheets-2381.pdf | TO-3P-3 Full Pack | 15.7mm | 24.7mm | 5.7mm | Lead Free | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | Single | 33 ns | 500 ns | 9A | 30V | 1500V | 4V | 3W Ta 78W Tc | N-Channel | 2025pF @ 30V | 3 Ω @ 3A, 10V | 4V @ 1mA | 9A Ta | 114nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH62N65X2 | IXYS | $9.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth62n65x2-datasheets-2385.pdf | TO-247-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 62A | 650V | 780W Tc | N-Channel | 5940pF @ 25V | 52m Ω @ 31A, 10V | 4.5V @ 4mA | 62A Tc | 104nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH21N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfh24n50-datasheets-4823.pdf | 500V | 21A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 250mOhm | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 21A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 250 ns | 84A | 500V | N-Channel | 4200pF @ 25V | 4 V | 250m Ω @ 10.5A, 10V | 4V @ 4mA | 21A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STP35N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp35n60dm2-datasheets-2268.pdf | TO-220-3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP35N | NOT SPECIFIED | 28A | 600V | 4V | 210W Tc | N-Channel | 2400pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 54nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP350LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfp350lc-datasheets-1344.pdf | 400V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 300mOhm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.2nF | 14 ns | 54ns | 35 ns | 33 ns | 16A | 30V | 400V | 4V | 190W Tc | 300mOhm | 400V | N-Channel | 2200pF @ 25V | 4 V | 300mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 76nC @ 10V | 300 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STW23N85K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw23n85k5-datasheets-2280.pdf | TO-247-3 | Lead Free | 17 Weeks | 38.000013g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STW23N | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 22 ns | 14ns | 8 ns | 55 ns | 19A | 30V | 250W Tc | 850V | N-Channel | 1650pF @ 100V | 275m Ω @ 9.5A, 10V | 5V @ 100μA | 19A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF40PBF | Vishay Siliconix | $4.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf40-datasheets-0459.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 2.5Ohm | 3 | Tin | 1 | Single | 150W | 1 | TO-247-3 | 1.6nF | 15 ns | 36ns | 32 ns | 110 ns | 4.7A | 20V | 900V | 4V | 150W Tc | 2.5Ohm | 900V | N-Channel | 1600pF @ 25V | 4 V | 2.5Ohm @ 2.8A, 10V | 4V @ 250μA | 4.7A Tc | 120nC @ 10V | 2.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTQ36P15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp36p15p-datasheets-7043.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | 31ns | 15 ns | 36 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 150V | 300W Tc | 90A | 0.11Ohm | 1500 mJ | -150V | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFP20N85X | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfp20n85x-datasheets-2292.pdf | TO-220-3 | 19 Weeks | yes | 20A | 850V | 540W Tc | N-Channel | 1660pF @ 25V | 330m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 20A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM190N08CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm190n08czc0g-datasheets-2294.pdf | TO-220-3 | TO-220 | 75V | 250W Tc | N-Channel | 8600pF @ 30V | 4.2mOhm @ 90A, 10V | 4V @ 250μA | 190A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH1N200P3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n200p3hv-datasheets-1754.pdf | TO-247-3 Variant | 24 Weeks | 1A | 2000V | 125W Tc | N-Channel | 646pF @ 25V | 40 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 23.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ36N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixth36n50p-datasheets-5556.pdf | 500V | 36A | TO-3P-3, SC-65-3 | Lead Free | 3 | 5 Weeks | 170mOhm | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 108A | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 250μA | 36A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRFIB6N60APBF | Vishay Siliconix | $0.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfib6n60a-datasheets-8555.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 750mOhm | 3 | No | 1 | Single | 60W | 1 | TO-220-3 | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 5.5A | 30V | 600V | 4V | 60W Tc | 750mOhm | 600V | N-Channel | 1400pF @ 25V | 4 V | 750mOhm @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| AOTF20S60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 3 | 16 Weeks | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 37.8W Tc | TO-220AB | 80A | N-Channel | 1038pF @ 100V | 199m Ω @ 10A, 10V | 4.1V @ 250μA | 20A Tc | 19.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP6N100D2 | IXYS | $6.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth6n100d2-datasheets-5417.pdf | TO-220-3 | 3 | 24 Weeks | yes | unknown | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 300W Tc | TO-220AB | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 6A Tc | 95nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| R8002ANX | ROHM Semiconductor | $10.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 10 Weeks | No | Single | 35W | 1 | FET General Purpose Powers | R-PSFM-T3 | 17 ns | 20ns | 70 ns | 33 ns | 2A | 30V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 2A | 8A | 0.265 mJ | 800V | N-Channel | 210pF @ 25V | 4.3 Ω @ 1A, 10V | 5V @ 1mA | 2A Tc | 12.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| TK31N60X,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tk31n60xs1f-datasheets-2330.pdf | TO-247-3 | 16 Weeks | 38.000013g | EAR99 | unknown | 1 | Single | 55 ns | 22ns | 6 ns | 130 ns | 30.8A | 30V | 600V | 230W Tc | N-Channel | 3000pF @ 300V | 88m Ω @ 9.4A, 10V | 3.5V @ 1.5mA | 30.8A Ta | 65nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1004PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl1004pbf-datasheets-2254.pdf | 40V | 130A | TO-220-3 | 10.6426mm | 8.77mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 6.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Tin | No | Single | 200W | 1 | FET General Purpose Power | 16 ns | 210ns | 14 ns | 25 ns | 130A | 16V | 40V | SILICON | DRAIN | SWITCHING | 1V | 200W Tc | TO-220AB | 520A | 700 mJ | 40V | N-Channel | 5330pF @ 25V | 1 V | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
| IXFP3N120 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfp3n120-datasheets-2262.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | No SVHC | 4.5Ohm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 5V | 200W Tc | TO-220AB | 3A | 700 mJ | 1.2kV | N-Channel | 1050pF @ 25V | 4.5 Ω @ 500mA, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V |
