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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFP36N20X3 | IXYS | $3.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy36n20x3-datasheets-3750.pdf | TO-220-3 | 3 | 19 Weeks | AVALANCHE RATED | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 176W Tc | TO-220AB | 36A | 50A | 0.045Ohm | 300 mJ | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK25N60X5,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-tk25n60x5s1f-datasheets-2233.pdf | TO-247-3 | 16 Weeks | TO-247 | 2.4nF | 25A | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 25A Ta | 60nC @ 10V | 140 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R190C7FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipp65r190c7fksa1-datasheets-2239.pdf | TO-220-3 | Lead Free | 18 Weeks | 3 | PG-TO220-3 | 1.15nF | 11 ns | 9 ns | 54 ns | 13A | 20V | 650V | 650V | 72W Tc | 168mOhm | N-Channel | 1150pF @ 400V | 190mOhm @ 5.7A, 10V | 4V @ 290μA | 13A Tc | 23nC @ 10V | 190 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP020N08N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp020n08n5aksa1-datasheets-2245.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 40 ns | 36ns | 37 ns | 102 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 375W Tc | TO-220AB | 480A | 0.002Ohm | 80V | N-Channel | 16900pF @ 40V | 2m Ω @ 100A, 10V | 3.8V @ 280μA | 120A Tc | 223nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TK35A65W5,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk35a65w5s5x-datasheets-2251.pdf | TO-220-3 Full Pack | 16 Weeks | 35A | 650V | 50W Tc | N-Channel | 4100pF @ 300V | 95m Ω @ 17.5A, 10V | 4.5V @ 2.1mA | 35A Ta | 115nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1004PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl1004pbf-datasheets-2254.pdf | 40V | 130A | TO-220-3 | 10.6426mm | 8.77mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 6.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Tin | No | Single | 200W | 1 | FET General Purpose Power | 16 ns | 210ns | 14 ns | 25 ns | 130A | 16V | 40V | SILICON | DRAIN | SWITCHING | 1V | 200W Tc | TO-220AB | 520A | 700 mJ | 40V | N-Channel | 5330pF @ 25V | 1 V | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
| IXFP3N120 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfp3n120-datasheets-2262.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | No SVHC | 4.5Ohm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 5V | 200W Tc | TO-220AB | 3A | 700 mJ | 1.2kV | N-Channel | 1050pF @ 25V | 4.5 Ω @ 500mA, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTP36N30P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta36n30p-datasheets-4075.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 24 Weeks | 110MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | 24 ns | 30ns | 28 ns | 97 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 90A | 300V | N-Channel | 2250pF @ 25V | 110m Ω @ 18A, 10V | 5.5V @ 250μA | 36A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FCH104N60F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch104n60f-datasheets-2210.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 12 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 357W | 1 | FET General Purpose Power | 34 ns | 58ns | 20 ns | 98 ns | 37A | 5V | SILICON | SWITCHING | 600V | 357W Tc | TO-247AB | 809 mJ | 650V | N-Channel | 5950pF @ 100V | 104m Ω @ 18.5A, 10V | 5V @ 250μA | 37A Tc | 139nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFP22N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixfh22n65x2-datasheets-0336.pdf | TO-220-3 | 19 Weeks | 22A | 650V | 390W Tc | N-Channel | 2310pF @ 25V | 160m Ω @ 11A, 10V | 5.5V @ 1.5mA | 22A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ44P15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp44p15t-datasheets-5534.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 298W Tc | 130A | 0.065Ohm | 1000 mJ | P-Channel | 13400pF @ 25V | 65m Ω @ 500mA, 10V | 4V @ 250μA | 44A Tc | 175nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| TK25E60X,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk25e60xs1x-datasheets-2164.pdf | TO-220-3 | 16 Weeks | 25A | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 125m Ω @ 7.5A, 10V | 3.5V @ 1.2mA | 25A Ta | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R190P6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r190p6fksa1-datasheets-2168.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | No SVHC | 3 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 15 ns | 8ns | 7 ns | 45 ns | 20.2A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 151W Tc | 57A | 0.19Ohm | 419 mJ | N-Channel | 1750pF @ 100V | 190m Ω @ 7.6A, 10V | 4.5V @ 630μ | 20.2A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STW15N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp15n80k5-datasheets-4469.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Tin (Sn) | STW15N | Single | 190W | 1 | FET General Purpose Power | 19 ns | 44 ns | 14A | 30V | SILICON | SWITCHING | 800V | 800V | 190W Tc | 56A | N-Channel | 1100pF @ 100V | 375m Ω @ 7A, 10V | 5V @ 100μA | 14A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFA270N06T3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiperFET™, TrenchT3™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh270n06t3-datasheets-1458.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | yes | unknown | 270A | 60V | 480W Tc | N-Channel | 12600pF @ 25V | 3.1m Ω @ 100A, 10V | 4V @ 250μA | 270A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA22N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixfh22n65x2-datasheets-0336.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 22A | 650V | 390W Tc | N-Channel | 2310pF @ 25V | 160m Ω @ 11A, 10V | 5.5V @ 1.5mA | 22A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ26N50P | IXYS | $6.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt26n50p-datasheets-3884.pdf | 500V | 26A | TO-3P-3, SC-65-3 | Lead Free | 3 | 17 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 250μA | 26A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFP30N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy30n25x3-datasheets-4884.pdf | TO-220-3 | 19 Weeks | 250V | 176W Tc | N-Channel | 1450pF @ 25V | 60m Ω @ 15A, 10V | 4.5V @ 500μA | 30A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW16N50C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spw16n50c3fksa1-datasheets-2187.pdf | TO-247-3 | 3 | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 560V | 500V | 160W Tc | TO-247AD | 16A | 48A | 0.28Ohm | 460 mJ | N-Channel | 1600pF @ 25V | 280m Ω @ 10A, 10V | 3.9V @ 675μA | 16A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STW45N60DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw45n60dm2ag-datasheets-2193.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW45N | NOT SPECIFIED | 34A | 600V | 250W Tc | N-Channel | 2500pF @ 100V | 93m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 56nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ52N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt52n30p-datasheets-3827.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 20 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 150A | 0.066Ohm | 1000 mJ | 300V | N-Channel | 3490pF @ 25V | 66m Ω @ 26A, 10V | 5V @ 250μA | 52A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFH42N60P3 | IXYS | $7.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh42n60p3-datasheets-2199.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 830W | 1 | FET General Purpose Power | Not Qualified | 32 ns | 23ns | 17 ns | 60 ns | 42A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 830W Tc | 100A | 0.185Ohm | 600V | N-Channel | 5150pF @ 25V | 185m Ω @ 500mA, 10V | 5V @ 4mA | 42A Tc | 78nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP43N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp43n60dm2-datasheets-2202.pdf | TO-220-3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP43N | NOT SPECIFIED | 34A | 600V | 4V | 250W Tc | N-Channel | 2500pF @ 100V | 93m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 56nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF9N90CT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp9n90c-datasheets-5881.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 10 Weeks | 2.27g | No SVHC | 1.4Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 68W | 1 | FET General Purpose Power | 50 ns | 120ns | 75 ns | 100 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 68W Tc | TO-220AB | 8A | 900 mJ | 900V | N-Channel | 2730pF @ 25V | 3 V | 1.4 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| FQA6N90C-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fqa6n90cf109-datasheets-2150.pdf&product=onsemiconductor-fqa6n90cf109-10050331 | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | 3 | 4 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 18 hours ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 198W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 90ns | 60 ns | 55 ns | 6A | 30V | SILICON | SWITCHING | 5V | 198W Tc | 6A | 24A | 650 mJ | 900V | N-Channel | 1770pF @ 25V | 2.3 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STW7N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw7n90k5-datasheets-2160.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STW7N | 900V | 110W Tc | 720mOhm | N-Channel | 5V @ 100μA | 7A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF5N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std5n95k3-datasheets-4636.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.5Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF5N | 3 | Single | 25W | 1 | FET General Purpose Power | 17 ns | 7ns | 18 ns | 32 ns | 4A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 25W Tc | TO-220AB | 4A | 16A | 100 mJ | 950V | N-Channel | 460pF @ 25V | 3.5 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTP130N10T | IXYS | $1.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n10t-datasheets-0932.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 47ns | 28 ns | 44 ns | 130A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 0.0091Ohm | 500 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| STP9NK60ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp9nk60z-datasheets-3046.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 245 | STP9N | 3 | Single | 30W | 1 | FET General Purpose Power | 19 ns | 17ns | 15 ns | 43 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 7A | 28A | 0.95Ohm | 600V | N-Channel | 1110pF @ 25V | 950m Ω @ 3.5A, 10V | 4.5V @ 100μA | 7A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SPP11N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spp11n80c3xksa1-datasheets-2085.pdf | TO-220-3 | 3 | 18 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 800V | 800V | 156W Tc | TO-220AB | 11A | 33A | 0.45Ohm | 470 mJ | N-Channel | 1600pF @ 100V | 450m Ω @ 7.1A, 10V | 3.9V @ 680μA | 11A Tc | 85nC @ 10V | 10V | ±20V |
